페이지 173 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS43LD32320A-25BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 400MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고5,568	DRAM	SDRAM - Mobile LPDDR2	1Gb (32M x 32)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
IS42S16100E-6BL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 16MBIT 166MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (6.4x10.1)	패키지: 60-TFBGA	재고4,432	DRAM	SDRAM	16Mb (1M x 16)	Parallel	166MHz	-	5.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (6.4x10.1)
CY62148VNBLL-70BAI	Cypress Semiconductor Corp	IC SRAM 4MBIT 70NS 36VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 36-VFBGA Supplier Device Package: 36-VFBGA (6x8)	패키지: 36-VFBGA	재고5,328	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	36-VFBGA	36-VFBGA (6x8)
CY7C1312BV18-250BZC	Cypress Semiconductor Corp	IC SRAM 18MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고6,496	SRAM	SRAM - Synchronous, QDR II	18Mb (1M x 18)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
CY7C1231H-133AXC	Cypress Semiconductor Corp	IC SRAM 2MBIT 133MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 2Mb (128K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고2,176	SRAM	SRAM - Synchronous	2Mb (128K x 18)	Parallel	133MHz	-	-	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
MT41J128M8HX-15E:D TR	Micron Technology Inc.	IC SDRAM 1GBIT 667MHZ 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-FBGA Supplier Device Package: 78-FBGA (9x11.5)	패키지: 78-FBGA	재고6,752	DRAM	SDRAM - DDR3	1Gb (128M x 8)	Parallel	667MHz	-	-	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	78-FBGA	78-FBGA (9x11.5)
AT49BV040-12VI	Microchip Technology	IC FLASH 4MBIT 120NS 32VSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 120ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-VSOP	패키지: 32-TFSOP (0.488", 12.40mm Width)	재고5,376	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	50µs	120ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-VSOP
CY7C1380KV33-167AXIT	Cypress Semiconductor Corp	IC SRAM 18MBIT 167MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고2,160	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	167MHz	-	3.4ns	3.135 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
71V3556SA100BGG	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 100MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고2,800	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	100MHz	-	5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
71V2546S150PFG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 150MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고6,000	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
N01S830HAT22IT	ON Semiconductor	IC SRAM 1MBIT 20MHZ 8TSSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고4,144	SRAM	SRAM	1Mb (128K x 8)	SPI	20MHz	-	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY15E004Q-SXAT	Cypress Semiconductor Corp	F-RAM MEMORY SERIAL Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,600	FRAM	FRAM (Ferroelectric RAM)	4Kb (512 x 8)	SPI	20MHz	-	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	-	-	-
CY7C1425KV18-250BZXC	Cypress Semiconductor Corp	IC SRAM 36MBIT 250MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 36Mb (4M x 9) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고7,952	SRAM	SRAM - Synchronous, QDR II	36Mb (4M x 9)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
AT24CS32-STUM-T	Microchip Technology	IC EEPROM 32KBIT 1MHZ SOT23-5 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Supplier Device Package: SOT-23-5	패키지: SOT-23-5 Thin, TSOT-23-5	재고47,460	EEPROM	EEPROM	32Kb (4K x 8)	I2C	1MHz	5ms	550ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	SOT-23-5 Thin, TSOT-23-5	SOT-23-5
X28HC256JI-90R5420	Renesas Electronics America	IC EEPROM 256K PARALLEL 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 5ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC (11.43x13.97)	패키지: 32-LCC (J-Lead)	재고5,104	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	5ms	90ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-LCC (J-Lead)	32-PLCC (11.43x13.97)
S29JL032J60TFI413	Cypress Semiconductor Corp	IC FLASH 32M PARALLEL 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 60ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP (18.4x12)	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고5,472	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	60ns	60ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP (18.4x12)
AT28C64B-15TU-T	Microchip Technology	IC EEPROM 64K PARALLEL 28TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP	패키지: 28-TSSOP (0.465", 11.80mm Width)	재고3,504	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	10ms	150ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP
S25FL064P0XNFB003	Cypress Semiconductor Corp	IC GATE NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 5µs, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	패키지: 8-WDFN Exposed Pad	재고7,040	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O	104MHz	5µs, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
MTFC8GAMALNA-AAT	Micron Technology Inc.	IC FLASH 64G MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,480	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	-	-40°C ~ 105°C (TA)	-	-	-
CAT93C66V-TE13	onsemi	IC EEPROM 4KBIT MICROWIRE 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: Microwire Clock Frequency: 2 MHz Write Cycle Time - Word, Page: - Access Time: 500 ns Voltage - Supply: 2.5V ~ 6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	EEPROM	EEPROM	4Kbit	Microwire	2 MHz	-	500 ns	2.5V ~ 6V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
EM6HE16EWAKG-10IH	Etron Technology, Inc.	IC DRAM 4GBIT PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	패키지: -	재고17,055	DRAM	SDRAM - DDR3L	4Gbit	Parallel	933 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
S28HS512TGABHI013	Infineon Technologies	IC FLASH 512MBIT SPI/OCTL 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 512Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 1.7ms Access Time: 5.45 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	512Mbit	SPI - Octal I/O	200 MHz	1.7ms	5.45 ns	1.7V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
CY7C187-35VC	Cypress Semiconductor Corp	IC SRAM 64KBIT PARALLEL 24SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 64Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 24-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 24-SOJ	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	64Kbit	Parallel	-	35ns	35 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	24-BSOJ (0.300", 7.62mm Width)	24-SOJ
CY62136VLL-55ZI	Cypress Semiconductor Corp	IC SRAM 2MBIT PARALLEL 44TSOP II Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	2Mbit	Parallel	-	55ns	55 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
MT58L512L18DT-7-5	Micron Technology Inc.	IC SRAM 8MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 4 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	패키지: -	Request a Quote	SRAM	SRAM - Standard	8Mbit	Parallel	133 MHz	-	4 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
SM671PBE-AFST	Silicon Motion, Inc.	IC FLASH 2TBIT UFS3.1 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 2Tbit Memory Interface: UFS3.1 Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-BGA (11.5x13)	패키지: -	Request a Quote	FLASH	FLASH - NAND (TLC)	2Tbit	UFS3.1	-	-	-	-	-40°C ~ 105°C	Surface Mount	153-TFBGA	153-BGA (11.5x13)
MT53E512M32D1ZW-046-AIT-B-TR	Micron Technology Inc.	LPDDR4 16G 512MX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 16Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	16Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 95°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
MEM-NPE-G2-FLD256-C	ProLabs	Cisco MEM-NPE-G2-FLD256 Compatib Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

IS43LD32320A-25BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 400MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고5,568

DRAM

SDRAM - Mobile LPDDR2

1Gb (32M x 32)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

IS42S16100E-6BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 166MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (6.4x10.1)

패키지: 60-TFBGA

재고4,432

DRAM

SDRAM

16Mb (1M x 16)

Parallel

166MHz

-

5.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (6.4x10.1)

CY62148VNBLL-70BAI

Cypress Semiconductor Corp

IC SRAM 4MBIT 70NS 36VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-VFBGA
Supplier Device Package: 36-VFBGA (6x8)

패키지: 36-VFBGA

재고5,328

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

36-VFBGA

36-VFBGA (6x8)

CY7C1312BV18-250BZC

Cypress Semiconductor Corp

IC SRAM 18MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고6,496

SRAM

SRAM - Synchronous, QDR II

18Mb (1M x 18)

Parallel

250MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

CY7C1231H-133AXC

Cypress Semiconductor Corp

IC SRAM 2MBIT 133MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 2Mb (128K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고2,176

SRAM

SRAM - Synchronous

2Mb (128K x 18)

Parallel

133MHz

-

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

MT41J128M8HX-15E:D TR

Micron Technology Inc.

IC SDRAM 1GBIT 667MHZ 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-FBGA
Supplier Device Package: 78-FBGA (9x11.5)

패키지: 78-FBGA

재고6,752

DRAM

SDRAM - DDR3

1Gb (128M x 8)

Parallel

667MHz

-

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

78-FBGA

78-FBGA (9x11.5)

AT49BV040-12VI

Microchip Technology

IC FLASH 4MBIT 120NS 32VSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 120ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP

패키지: 32-TFSOP (0.488", 12.40mm Width)

재고5,376

FLASH

4Mb (512K x 8)

Parallel

-

50µs

120ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-VSOP

CY7C1380KV33-167AXIT

Cypress Semiconductor Corp

IC SRAM 18MBIT 167MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고2,160

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

167MHz

-

3.4ns

3.135 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

71V3556SA100BGG

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 100MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고2,800

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

100MHz

-

5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

71V2546S150PFG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 150MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고6,000

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

N01S830HAT22IT

ON Semiconductor

IC SRAM 1MBIT 20MHZ 8TSSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고4,144

SRAM

1Mb (128K x 8)

SPI

20MHz

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY15E004Q-SXAT

Cypress Semiconductor Corp

F-RAM MEMORY SERIAL

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,600

FRAM

FRAM (Ferroelectric RAM)

4Kb (512 x 8)

SPI

20MHz

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

-

CY7C1425KV18-250BZXC

Cypress Semiconductor Corp

IC SRAM 36MBIT 250MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (4M x 9)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고7,952

SRAM

SRAM - Synchronous, QDR II

36Mb (4M x 9)

Parallel

250MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

AT24CS32-STUM-T

Microchip Technology

IC EEPROM 32KBIT 1MHZ SOT23-5

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Supplier Device Package: SOT-23-5

패키지: SOT-23-5 Thin, TSOT-23-5

재고47,460

EEPROM

32Kb (4K x 8)

I2C

1MHz

5ms

550ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

SOT-23-5 Thin, TSOT-23-5

SOT-23-5

X28HC256JI-90R5420

Renesas Electronics America

IC EEPROM 256K PARALLEL 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 5ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (11.43x13.97)

패키지: 32-LCC (J-Lead)

재고5,104

EEPROM

256Kb (32K x 8)

Parallel

-

5ms

90ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-LCC (J-Lead)

32-PLCC (11.43x13.97)

S29JL032J60TFI413

Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 60ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP (18.4x12)

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고5,472

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

60ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP (18.4x12)

AT28C64B-15TU-T

Microchip Technology

IC EEPROM 64K PARALLEL 28TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP

패키지: 28-TSSOP (0.465", 11.80mm Width)

재고3,504

EEPROM

64Kb (8K x 8)

Parallel

-

10ms

150ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP

S25FL064P0XNFB003

Cypress Semiconductor Corp

IC GATE NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 5µs, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

패키지: 8-WDFN Exposed Pad

재고7,040

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O

104MHz

5µs, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)

MTFC8GAMALNA-AAT

Micron Technology Inc.

IC FLASH 64G MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,480

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

-40°C ~ 105°C (TA)

-

CAT93C66V-TE13

onsemi

IC EEPROM 4KBIT MICROWIRE 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: Microwire
Clock Frequency: 2 MHz
Write Cycle Time - Word, Page: -
Access Time: 500 ns
Voltage - Supply: 2.5V ~ 6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

EEPROM

4Kbit

Microwire

2 MHz

-

500 ns

2.5V ~ 6V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

EM6HE16EWAKG-10IH

Etron Technology, Inc.

IC DRAM 4GBIT PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

패키지: -

재고17,055

DRAM

SDRAM - DDR3L

4Gbit

Parallel

933 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

S28HS512TGABHI013

Infineon Technologies

IC FLASH 512MBIT SPI/OCTL 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 512Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 1.7ms
Access Time: 5.45 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

512Mbit

SPI - Octal I/O

200 MHz

1.7ms

5.45 ns

1.7V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

CY7C187-35VC

Cypress Semiconductor Corp

IC SRAM 64KBIT PARALLEL 24SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 24-SOJ

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

64Kbit

Parallel

-

35ns

35 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

24-BSOJ (0.300", 7.62mm Width)

24-SOJ

CY62136VLL-55ZI

Cypress Semiconductor Corp

IC SRAM 2MBIT PARALLEL 44TSOP II

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

2Mbit

Parallel

-

55ns

55 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

MT58L512L18DT-7-5

Micron Technology Inc.

IC SRAM 8MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 4 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

패키지: -

Request a Quote

SRAM

SRAM - Standard

8Mbit

Parallel

133 MHz

-

4 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

SM671PBE-AFST

Silicon Motion, Inc.

IC FLASH 2TBIT UFS3.1 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 2Tbit
Memory Interface: UFS3.1
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-BGA (11.5x13)

패키지: -

Request a Quote

FLASH

FLASH - NAND (TLC)

2Tbit

UFS3.1

-

-40°C ~ 105°C

Surface Mount

153-TFBGA

153-BGA (11.5x13)

MT53E512M32D1ZW-046-AIT-B-TR

Micron Technology Inc.

LPDDR4 16G 512MX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 16Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

16Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 95°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

MEM-NPE-G2-FLD256-C

ProLabs

Cisco MEM-NPE-G2-FLD256 Compatib

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-