페이지 177 - 메모리 | 집적 회로(IC) | Heisener Electronics
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS62WV25616DALL-55BI -TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 55NS 48VFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 1.65 V ~ 2.2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
패키지: 48-TFBGA
재고2,048
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
55ns
55ns
1.65 V ~ 2.2 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
hot TC58NVG2S0HTAI0
Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM - NAND
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고6,408
EEPROM
EEPROM - NAND
4Gb (512M x 8)
Parallel
-
25ns
25ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
hot STK12C68-PF45
Cypress Semiconductor Corp

IC NVSRAM 64KBIT 45NS 28DIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.300", 7.62mm)
  • Supplier Device Package: 28-PDIP
패키지: 28-DIP (0.300", 7.62mm)
재고17,880
NVSRAM
NVSRAM (Non-Volatile SRAM)
64Kb (8K x 8)
Parallel
-
45ns
45ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
28-DIP (0.300", 7.62mm)
28-PDIP
hot AT25DF021-SSHF-B
Microchip Technology

IC FLASH 2MBIT 70MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 50MHz
  • Write Cycle Time - Word, Page: 7µs, 5ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,104
FLASH
FLASH
2Mb (256K x 8)
SPI
50MHz
7µs, 5ms
-
2.3 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AT49F512-70PC
Microchip Technology

IC FLASH 512KBIT 70NS 32DIP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP (0.600", 15.24mm)
  • Supplier Device Package: 32-DIP
패키지: 32-DIP (0.600", 15.24mm)
재고6,496
FLASH
FLASH
512Kb (64K x 8)
Parallel
-
50µs
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Through Hole
32-DIP (0.600", 15.24mm)
32-DIP
70T633S10BF
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 10NS 208CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 2.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-LFBGA
  • Supplier Device Package: 208-CABGA (15x15)
패키지: 208-LFBGA
재고4,560
SRAM
SRAM - Dual Port, Asynchronous
9Mb (512K x 18)
Parallel
-
10ns
10ns
2.4 V ~ 2.6 V
0°C ~ 70°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
hot MTFC64GAKAEEY-3M WT
Micron Technology Inc.

IC FLASH 64GBIT 153LFBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고9,480
-
-
-
-
-
-
-
-
-
-
-
-
7005L35J8
IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 35NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
패키지: 68-LCC (J-Lead)
재고2,480
SRAM
SRAM - Dual Port, Asynchronous
64Kb (8K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
IS61NLP51218A-200TQLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 200MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고5,088
SRAM
SRAM - Synchronous
9Mb (512K x 18)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
hot IS64WV25616BLL-10BLA3
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 48BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-BGA (6x8)
패키지: 48-TFBGA
재고6,368
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
2.4 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
48-TFBGA
48-BGA (6x8)
hot SST39WF1601-70-4I-MBQE
Microchip Technology

IC FLASH 16MBIT 70NS 48WFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 40µs
  • Access Time: 70ns
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-WFBGA
  • Supplier Device Package: 48-WFBGA (6x4)
패키지: 48-WFBGA
재고14,820
FLASH
FLASH
16Mb (1M x 16)
Parallel
-
40µs
70ns
1.65 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
48-WFBGA
48-WFBGA (6x4)
W9464G6KH-5I
Winbond Electronics

IC SDRAM 64MBIT 200MHZ 66TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 55ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP II
패키지: 66-TSSOP (0.400", 10.16mm Width)
재고4,384
DRAM
SDRAM - DDR
64Mb (4M x 16)
Parallel
200MHz
15ns
55ns
2.3 V ~ 2.7 V
-40°C ~ 85°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP II
MX29LV400CBTC-90G
Macronix

IC FLASH 4MBIT 90NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고4,960
FLASH
FLASH - NOR
4Mb (512K x 8)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
CAT25320HU3I-GT3
ON Semiconductor

IC EEPROM 32KBIT 10MHZ 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (2x3)
패키지: 8-UFDFN Exposed Pad
재고6,544
EEPROM
EEPROM
32Kb (4K x 8)
SPI
10MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-UDFN (2x3)
SST39VF800A-70-4C-MAQE
Microchip Technology

IC FLASH 8MBIT 70NS 48WFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-WFBGA
  • Supplier Device Package: 48-WFBGA (6x4)
패키지: 48-WFBGA
재고17,628
FLASH
FLASH
8Mb (512K x 16)
Parallel
-
20µs
70ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-WFBGA
48-WFBGA (6x4)
hot AT24C512C-XHM-T
Microchip Technology

IC EEPROM 512KBIT 1MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고1,070,712
EEPROM
EEPROM
512Kb (64K x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
AT25XE041B-XMHN-T
Adesto Technologies

IC FLASH 4MBIT 85MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 85MHz
  • Write Cycle Time - Word, Page: 8µs, 2.75ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고5,664
FLASH
FLASH
4Mb (512K x 8)
SPI
85MHz
8µs, 2.75ms
-
1.65 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
BR24G04NUX-3ATTR
Rohm Semiconductor

IC EEPROM 4KBIT 1MHZ 8VSON

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: VSON008X2030
패키지: 8-UFDFN Exposed Pad
재고7,792
EEPROM
EEPROM
4Kb (512 x 8)
I2C
1MHz
5ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
VSON008X2030
S29GL512S12TFBV20
Cypress Semiconductor Corp

IC FLASH 512M PARALLEL 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 120ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
패키지: 56-TFSOP (0.724", 18.40mm Width)
재고3,744
FLASH
FLASH - NOR
512Mb (32M x 16)
Parallel
-
60ns
120ns
1.65 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
MT53D512M64D4NW-062 WT ES:D
Micron Technology Inc.

IC DRAM 32G 1600MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gb (512M x 64)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,752
DRAM
SDRAM - Mobile LPDDR4
32Gb (512M x 64)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT35XL256ABA1G12-0AAT
Micron Technology Inc.

SPI FLASH NOR SLC 32MX8 TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Xccela Bus
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TPBGA
패키지: 24-TBGA
재고6,816
FLASH
FLASH
256Mb (32M x 8)
Xccela Bus
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C
Surface Mount
24-TBGA
24-TPBGA
MT53B128M32D1DS-062 AAT:A
Micron Technology Inc.

IC DRAM 4G 1600MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 4Gb (128M x 32)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: -
패키지: 200-WFBGA
재고12,636
DRAM
SDRAM - Mobile LPDDR4
4Gb (128M x 32)
-
1600MHz
-
-
1.1V
-40°C ~ 105°C (TA)
Surface Mount
200-WFBGA
-
W631GU8NB11I-TR
Winbond Electronics

IC DRAM 1GBIT PAR 78VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V, 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-VFBGA (8x10.5)
패키지: -
재고5,910
DRAM
SDRAM - DDR3L
1Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V, 1.425V ~ 1.575V
-40°C ~ 95°C (TC)
Surface Mount
78-VFBGA
78-VFBGA (8x10.5)
SST39VF200A-70-4C-EK
SST Silicon Storage Technology, Inc

FLASH NOR 2MB 70NS COMMERCIAL

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: 70 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
패키지: -
Request a Quote
FLASH
FLASH - NOR
2Mbit
Parallel
-
20µs
70 ns
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
5962-8700219UA
Renesas Electronics Corporation

IC RAM 2KX8 16K DUAL PORT SB48

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LCC
  • Supplier Device Package: 48-LCC (14.22x14.22)
패키지: -
Request a Quote
SRAM
SRAM - Dual Port, Asynchronous
16Kbit
Parallel
-
25ns
25 ns
4.5V ~ 5.5V
-55°C ~ 125°C (TA)
Surface Mount
48-LCC
48-LCC (14.22x14.22)
CY7C1370DV25-200CKJ
Cypress Semiconductor Corp

IC SRAM 18MBIT PARALLEL 200MHZ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, SDR
  • Memory Size: 18Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3 ns
  • Voltage - Supply: 2.375V ~ 2.625V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
SRAM
SRAM - Synchronous, SDR
18Mbit
Parallel
200 MHz
-
3 ns
2.375V ~ 2.625V
0°C ~ 70°C (TA)
-
-
-
IS43TR16512AL-107MBL
ISSI, Integrated Silicon Solution Inc

IC DRAM 8GBIT PAR 96LFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 8Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-LFBGA
  • Supplier Device Package: 96-LFBGA (10x14)
패키지: -
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DRAM
SDRAM - DDR3L
8Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
96-LFBGA
96-LFBGA (10x14)
IS64WV51216EEBLL-10BLA3
ISSI, Integrated Silicon Solution Inc

8Mb,High-Speed/Low Power,Async w

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10 ns
  • Voltage - Supply: 2.4V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
패키지: -
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SRAM
SRAM - Asynchronous
8Mbit
Parallel
-
10ns
10 ns
2.4V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)