페이지 185 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SST26VF016BA-104I/MF	Microchip Technology	IC FLASH 16MBIT 104MHZ 8WDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WDFN (5x6)	패키지: 8-WDFN Exposed Pad	재고5,936	FLASH	FLASH	16Mb (2M x 8)	SPI - Quad I/O	104MHz	1.5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WDFN (5x6)
CAT28C16AXI12	ON Semiconductor	IC EEPROM 16KBIT 120NS 24SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 5ms Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-SOIC (0.295", 7.50mm Width) Supplier Device Package: 24-SOIC	패키지: 24-SOIC (0.295", 7.50mm Width)	재고2,928	EEPROM	EEPROM	16Kb (2K x 8)	Parallel	-	5ms	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	24-SOIC (0.295", 7.50mm Width)	24-SOIC
AT24C08BN-SH-B	Microchip Technology	IC EEPROM 8KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고12,348	EEPROM	EEPROM	8Kb (1K x 8)	I2C	1MHz	5ms	550ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS41LV16105B-50TL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 16MBIT 50NS 44TSOP Memory Type: Volatile Memory Format: DRAM Technology: DRAM - FP Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 25ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고4,096	DRAM	DRAM - FP	16Mb (1M x 16)	Parallel	-	-	25ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
AT27C010-12PI	Microchip Technology	IC OTP 1MBIT 120NS 32DIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-DIP	패키지: 32-DIP (0.600", 15.24mm)	재고3,344	EPROM	EPROM - OTP	1Mb (128K x 8)	Parallel	-	-	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	32-DIP (0.600", 15.24mm)	32-DIP
709289L9PFI	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 9NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 9ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고6,208	SRAM	SRAM - Dual Port, Synchronous	1Mb (64K x 16)	Parallel	-	-	9ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
71V65603S133BGG	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고2,672	SRAM	SRAM - Synchronous ZBT	9Mb (256K x 36)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
AS4C32M16SA-7TINTR	Alliance Memory, Inc.	IC SDRAM 512MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: 2ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고6,096	DRAM	SDRAM	512Mb (32M x 16)	Parallel	143MHz	2ns	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
IS61NLP25618A-200B3LI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4.5MBIT 200MHZ 165BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TFBGA Supplier Device Package: 165-BGA (13x15)	패키지: 165-TFBGA	재고3,088	SRAM	SRAM - Synchronous	4.5Mb (256K x 18)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TFBGA	165-BGA (13x15)
W25Q256JVBIQ TR	Winbond Electronics	IC FLASH 256MBIT 104MHZ 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	패키지: 24-TBGA	재고3,744	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI	133MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
24LC08BT-E/MC	Microchip Technology	IC EEPROM 8KBIT 400KHZ 8DFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (256 x 8 x 4) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Supplier Device Package: 8-DFN (2x3)	패키지: 8-VFDFN Exposed Pad	재고6,080	EEPROM	EEPROM	8Kb (256 x 8 x 4)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-VFDFN Exposed Pad	8-DFN (2x3)
11LC160-I/SN	Microchip Technology	IC EEPROM 16KBIT 100KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Single Wire Clock Frequency: 100kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,192	EEPROM	EEPROM	16Kb (2K x 8)	Single Wire	100kHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT24C04D-SSHM-T	Microchip Technology	IC EEPROM 4KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고1,284,000	EEPROM	EEPROM	4Kb (512 x 8)	I2C	1MHz	5ms	450ns	1.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT29F128G08CBCEBRT-37B:E	Micron Technology Inc.	IC FLASH 128G PARALLEL 267MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: 267MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,184	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	267MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
S29GL01GS12FHIV20	Cypress Semiconductor Corp	IC FLASH 1G PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 120ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	패키지: 64-LBGA	재고3,232	FLASH	FLASH - NOR	1Gb (64M x 16)	Parallel	-	60ns	120ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
S29GL032N90BAI030	Cypress Semiconductor Corp	IC FLASH 32M PARALLEL 48FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-FBGA (8.15x6.15)	패키지: 48-VFBGA	재고5,568	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-FBGA (8.15x6.15)
MT25QU128ABA8E54-0SIT TR	Micron Technology Inc.	IC FLASH 128M SPI 15XFWLBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 15-XFBGA, WLCSP Supplier Device Package: 15-XFWLBGA	패키지: 15-XFBGA, WLCSP	재고4,432	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	133MHz	8ms, 2.8ms	-	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	15-XFBGA, WLCSP	15-XFWLBGA
AT24C02C-MAHM-E	Microchip Technology	IC EEPROM 2K I2C 1MHZ 8UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	패키지: 8-UFDFN Exposed Pad	재고2,912	EEPROM	EEPROM	2Kb (256 x 8)	I²C	1MHz	5ms	550ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
MT53D8DBPM-DC	Micron Technology Inc.	LPDDR4 64G 1GX64 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,040	-	-	-	-	-	-	-	-	-	-	-	-
577578-003-00	Cypress Semiconductor Corp	IC FLASH NOR 128MB 8SOIC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,264	-	-	-	-	-	-	-	-	-	-	-	-
FM24CL16B-GT	Cypress Semiconductor Corp	IC FRAM 64K PARALLEL 28SOIC Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 16Kb (2K x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: - Access Time: 550ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,352	FRAM	FRAM (Ferroelectric RAM)	16Kb (2K x 8)	I²C	1MHz	-	550ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CY7C1345A-117AC	Cypress Semiconductor Corp	IC SRAM 4.5MBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR Memory Size: 4.5Mbit Memory Interface: Parallel Clock Frequency: 117 MHz Write Cycle Time - Word, Page: - Access Time: 7.5 ns Voltage - Supply: 3.15V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: -	Request a Quote	SRAM	SRAM - Synchronous, SDR	4.5Mbit	Parallel	117 MHz	-	7.5 ns	3.15V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
R1RW0416DGE-2LR-B1	Renesas Electronics Corporation	SRAM 4MB FAST X16 3V SOJ 12NS 0T Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	패키지: -	재고312	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	12ns	12 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
5962-8855206UA	Renesas Electronics Corporation	IC SRAM 256KBIT PARALLEL 28CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.300", 7.62mm) Supplier Device Package: 28-CDIP	패키지: -	Request a Quote	SRAM	SRAM - Synchronous	256Kbit	Parallel	-	25ns	25 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.300", 7.62mm)	28-CDIP
W634GU6RB09I	Winbond Electronics	4GB DDR3L 1.35V SDRAM, X16, 1066 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 1.067 GHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-VFBGA (7.5x13)	패키지: -	Request a Quote	DRAM	SDRAM - DDR3L	4Gbit	Parallel	1.067 GHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-VFBGA (7.5x13)
M3004316035NX0ITBR	Renesas Electronics Corporation	M3004316 MRAM PARALLEL 4MB X16 3 Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP	패키지: -	Request a Quote	RAM	MRAM (Magnetoresistive RAM)	4Mbit	Parallel	-	35ns	35 ns	2.7V ~ 3.6V	-40°C ~ 85°C	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP
FT24C04A-KTR-B	Fremont Micro Devices Ltd	IC EEPROM 4KBIT I2C 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Access Time: 550 ns Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	Request a Quote	EEPROM	EEPROM	4Kbit	I2C	1 MHz	5ms	550 ns	1.8V ~ 5.5V	-40°C ~ 85°C	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY15B102QSN-108SXIT	Infineon Technologies	IC FRAM 2MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 2Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108 MHz Write Cycle Time - Word, Page: - Access Time: 7 ns Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	2Mbit	SPI - Quad I/O, QPI	108 MHz	-	7 ns	1.8V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC

SST26VF016BA-104I/MF

Microchip Technology

IC FLASH 16MBIT 104MHZ 8WDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WDFN (5x6)

패키지: 8-WDFN Exposed Pad

재고5,936

FLASH

16Mb (2M x 8)

SPI - Quad I/O

104MHz

1.5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WDFN (5x6)

CAT28C16AXI12

ON Semiconductor

IC EEPROM 16KBIT 120NS 24SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 5ms
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 24-SOIC

패키지: 24-SOIC (0.295", 7.50mm Width)

재고2,928

EEPROM

16Kb (2K x 8)

Parallel

-

5ms

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

24-SOIC (0.295", 7.50mm Width)

24-SOIC

AT24C08BN-SH-B

Microchip Technology

IC EEPROM 8KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고12,348

EEPROM

8Kb (1K x 8)

I2C

1MHz

5ms

550ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS41LV16105B-50TL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 16MBIT 50NS 44TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - FP
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 25ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고4,096

DRAM

DRAM - FP

16Mb (1M x 16)

Parallel

-

25ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

AT27C010-12PI

Microchip Technology

IC OTP 1MBIT 120NS 32DIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP

패키지: 32-DIP (0.600", 15.24mm)

재고3,344

EPROM

EPROM - OTP

1Mb (128K x 8)

Parallel

-

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

32-DIP (0.600", 15.24mm)

32-DIP

709289L9PFI

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 9NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 9ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고6,208

SRAM

SRAM - Dual Port, Synchronous

1Mb (64K x 16)

Parallel

-

9ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

71V65603S133BGG

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고2,672

SRAM

SRAM - Synchronous ZBT

9Mb (256K x 36)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

AS4C32M16SA-7TINTR

Alliance Memory, Inc.

IC SDRAM 512MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고6,096

DRAM

SDRAM

512Mb (32M x 16)

Parallel

143MHz

2ns

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

IS61NLP25618A-200B3LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5MBIT 200MHZ 165BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TFBGA
Supplier Device Package: 165-BGA (13x15)

패키지: 165-TFBGA

재고3,088

SRAM

SRAM - Synchronous

4.5Mb (256K x 18)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TFBGA

165-BGA (13x15)

W25Q256JVBIQ TR

Winbond Electronics

IC FLASH 256MBIT 104MHZ 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

패키지: 24-TBGA

재고3,744

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI

133MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

24LC08BT-E/MC

Microchip Technology

IC EEPROM 8KBIT 400KHZ 8DFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (256 x 8 x 4)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Supplier Device Package: 8-DFN (2x3)

패키지: 8-VFDFN Exposed Pad

재고6,080

EEPROM

8Kb (256 x 8 x 4)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-VFDFN Exposed Pad

8-DFN (2x3)

11LC160-I/SN

Microchip Technology

IC EEPROM 16KBIT 100KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Single Wire
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,192

EEPROM

16Kb (2K x 8)

Single Wire

100kHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT24C04D-SSHM-T

Microchip Technology

IC EEPROM 4KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고1,284,000

EEPROM

4Kb (512 x 8)

I2C

1MHz

5ms

450ns

1.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT29F128G08CBCEBRT-37B:E

Micron Technology Inc.

IC FLASH 128G PARALLEL 267MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: 267MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,184

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

267MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

S29GL01GS12FHIV20

Cypress Semiconductor Corp

IC FLASH 1G PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 120ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

패키지: 64-LBGA

재고3,232

FLASH

FLASH - NOR

1Gb (64M x 16)

Parallel

-

60ns

120ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

S29GL032N90BAI030

Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 48FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)

패키지: 48-VFBGA

재고5,568

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-FBGA (8.15x6.15)

MT25QU128ABA8E54-0SIT TR

Micron Technology Inc.

IC FLASH 128M SPI 15XFWLBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 15-XFBGA, WLCSP
Supplier Device Package: 15-XFWLBGA

패키지: 15-XFBGA, WLCSP

재고4,432

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

133MHz

8ms, 2.8ms

-

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

15-XFBGA, WLCSP

15-XFWLBGA

AT24C02C-MAHM-E

Microchip Technology

IC EEPROM 2K I2C 1MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

패키지: 8-UFDFN Exposed Pad

재고2,912

EEPROM

2Kb (256 x 8)

I²C

1MHz

5ms

550ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

MT53D8DBPM-DC

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,040

-

577578-003-00

Cypress Semiconductor Corp

IC FLASH NOR 128MB 8SOIC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,264

-

FM24CL16B-GT

Cypress Semiconductor Corp

IC FRAM 64K PARALLEL 28SOIC

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 16Kb (2K x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: -
Access Time: 550ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,352

FRAM

FRAM (Ferroelectric RAM)

16Kb (2K x 8)

I²C

1MHz

-

550ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CY7C1345A-117AC

Cypress Semiconductor Corp

IC SRAM 4.5MBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 4.5Mbit
Memory Interface: Parallel
Clock Frequency: 117 MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5 ns
Voltage - Supply: 3.15V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: -

Request a Quote

SRAM

SRAM - Synchronous, SDR

4.5Mbit

Parallel

117 MHz

-

7.5 ns

3.15V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

R1RW0416DGE-2LR-B1

Renesas Electronics Corporation

SRAM 4MB FAST X16 3V SOJ 12NS 0T

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

패키지: -

재고312

SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

12ns

12 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

5962-8855206UA

Renesas Electronics Corporation

IC SRAM 256KBIT PARALLEL 28CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.300", 7.62mm)
Supplier Device Package: 28-CDIP

패키지: -

Request a Quote

SRAM

SRAM - Synchronous

256Kbit

Parallel

-

25ns

25 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.300", 7.62mm)

28-CDIP

W634GU6RB09I

Winbond Electronics

4GB DDR3L 1.35V SDRAM, X16, 1066

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 1.067 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-VFBGA (7.5x13)

패키지: -

Request a Quote

DRAM

SDRAM - DDR3L

4Gbit

Parallel

1.067 GHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-VFBGA (7.5x13)

M3004316035NX0ITBR

Renesas Electronics Corporation

M3004316 MRAM PARALLEL 4MB X16 3

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP

패키지: -

Request a Quote

RAM

MRAM (Magnetoresistive RAM)

4Mbit

Parallel

-

35ns

35 ns

2.7V ~ 3.6V

-40°C ~ 85°C

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP

FT24C04A-KTR-B

Fremont Micro Devices Ltd

IC EEPROM 4KBIT I2C 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550 ns
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: -

Request a Quote

EEPROM

4Kbit

I2C

1 MHz

5ms

550 ns

1.8V ~ 5.5V

-40°C ~ 85°C

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY15B102QSN-108SXIT

Infineon Technologies

IC FRAM 2MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 2Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: -
Access Time: 7 ns
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

2Mbit

SPI - Quad I/O, QPI

108 MHz

-

7 ns

1.8V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC