페이지 1984 - 메모리 | 집적 회로(IC) | Heisener Electronics
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
W25Q128FVAIQ TR
Winbond Electronics

IC FLASH 128MBIT 104MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고7,920
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI
104MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
MT29F32G08ABAAAM73A3WC1P
Micron Technology Inc.

IC FLASH 32GBIT WAFER

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고7,680
FLASH
FLASH - NAND
32Gb (4G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
Die
Die
CY7C09569V-83AXC
Cypress Semiconductor Corp

IC SRAM 576KBIT 83MHZ 144TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 576Kb (16K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 83MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 144-LQFP
  • Supplier Device Package: 144-TQFP (20x20)
패키지: 144-LQFP
재고3,344
SRAM
SRAM - Dual Port, Synchronous
576Kb (16K x 36)
Parallel
83MHz
-
6ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
144-LQFP
144-TQFP (20x20)
hot MT48LC2M32B2P-5:G
Micron Technology Inc.

IC SDRAM 64MBIT 200MHZ 86TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (2M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
패키지: 86-TFSOP (0.400", 10.16mm Width)
재고13,728
DRAM
SDRAM
64Mb (2M x 32)
Parallel
200MHz
-
4.5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
MT48LC4M32B2P-6:G TR
Micron Technology Inc.

IC SDRAM 128MBIT 167MHZ 86TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 5.5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
패키지: 86-TFSOP (0.400", 10.16mm Width)
재고5,232
DRAM
SDRAM
128Mb (4M x 32)
Parallel
167MHz
12ns
5.5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
93LC46A-I/PG
Microchip Technology

IC EEPROM 1KBIT 2MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고2,256
EEPROM
EEPROM
1Kb (128 x 8)
SPI
2MHz
6ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot AT24C04N-10SU-2.7
Microchip Technology

IC EEPROM 4KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고58,392
EEPROM
EEPROM
4Kb (512 x 8)
I2C
400kHz
5ms
900ns
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot AT27C256R-12JC
Microchip Technology

IC OTP 256KBIT 120NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 120ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고17,640
EPROM
EPROM - OTP
256Kb (32K x 8)
Parallel
-
-
120ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
AT49F001NT-55TC
Microchip Technology

IC FLASH 1MBIT 55NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP
패키지: 32-TFSOP (0.724", 18.40mm Width)
재고2,848
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
50µs
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP
70V3319S166BC
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 256CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 4.5Mb (256K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.6ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-CABGA (17x17)
패키지: 256-LBGA
재고5,376
SRAM
SRAM - Dual Port, Synchronous
4.5Mb (256K x 18)
Parallel
166MHz
-
3.6ns
3.15 V ~ 3.45 V
0°C ~ 70°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
70V657S10BC
IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 10NS 256CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 1.125Mb (32K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-CABGA (17x17)
패키지: 256-LBGA
재고3,664
SRAM
SRAM - Dual Port, Asynchronous
1.125Mb (32K x 36)
Parallel
-
10ns
10ns
3.15 V ~ 3.45 V
0°C ~ 70°C (TA)
Surface Mount
256-LBGA
256-CABGA (17x17)
7007L55PFI
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 55NS 80TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 80-LQFP
  • Supplier Device Package: 80-TQFP (14x14)
패키지: 80-LQFP
재고7,936
SRAM
SRAM - Dual Port, Asynchronous
256Kb (32K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
80-LQFP
80-TQFP (14x14)
MT29F768G08EECBBJ4-37ES:B TR
Micron Technology Inc.

IC FLASH 768GBIT 367MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 768Gb (96G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 267MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,304
FLASH
FLASH - NAND
768Gb (96G x 8)
Parallel
267MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
IS42S16160G-5BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 200MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
패키지: 54-TFBGA
재고4,768
DRAM
SDRAM
256Mb (16M x 16)
Parallel
200MHz
-
5ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
S26KL128SDABHB023
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 96ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,792
FLASH
FLASH - NOR
128Mb (16M x 8)
Parallel
100MHz
-
96ns
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
-
-
-
S25FL256LAGMFB000
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,096
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI - Quad I/O, QPI
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
-
-
-
S-24C16DI-K8T3U5
SII Semiconductor Corporation

IC EEPROM 16KBIT 1MHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 500ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
  • Supplier Device Package: 8-TMSOP
패키지: 8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
재고2,192
EEPROM
EEPROM
16Kb (2K x 8)
I2C
1MHz
5ms
500ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-WSSOP, 8-MSOP (0.110", 2.80mm Width)
8-TMSOP
hot CY7C2270KV18-550BZXC
Cypress Semiconductor Corp

IC SRAM 36MBIT 550MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II+
  • Memory Size: 36Mb (1M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 550MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: 165-LBGA
재고3,616
SRAM
SRAM - Synchronous, DDR II+
36Mb (1M x 36)
Parallel
550MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
AS4C32M16D3-12BCNTR
Alliance Memory, Inc.

IC DRAM 512M PARALLEL 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-VFBGA
  • Supplier Device Package: 96-FBGA (13x8)
패키지: 96-VFBGA
재고7,424
DRAM
SDRAM - DDR3
512Mb (32M x 16)
Parallel
800MHz
-
20ns
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
96-VFBGA
96-FBGA (13x8)
MT53D1024M32D4NQ-062 WT ES:D
Micron Technology Inc.

IC DRAM 32G 1600MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gb (1G x 32)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,512
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
SST26VF016B-104I/MF70SVAO
Microchip Technology

16MB SQI FLASH MEMORY

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 1.5ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WDFN (5x6)
패키지: 8-WDFN Exposed Pad
재고6,416
FLASH
FLASH
16Mb (2M x 8)
SPI - Quad I/O
104MHz
1.5ms
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WDFN (5x6)
EMMC256-IY29-5B101
Kingston Technology

IC FLASH 2TBIT EMMC 5.1 153FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 2Tbit
  • Memory Interface: eMMC_5.1
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-BGA
  • Supplier Device Package: 153-FBGA (11.5x13)
패키지: -
Request a Quote
FLASH
FLASH - NAND (TLC)
2Tbit
eMMC_5.1
-
-
-
-
-40°C ~ 85°C
Surface Mount
153-BGA
153-FBGA (11.5x13)
SST39SF010A-70-4I-WHE-T
Microchip Technology

IC FLSH 1MBIT PARALLEL 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: 70 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 32-TSOP
패키지: -
Request a Quote
FLASH
FLASH - NOR
1Mbit
Parallel
-
20µs
70 ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
32-TFSOP (0.488", 12.40mm Width)
32-TSOP
NDS76PT5-16AT
Insignis Technology Corporation

SDR 128MB X16 TSOPII 54L 10X22(X

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 5 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: -
Request a Quote
DRAM
SDRAM
128Mbit
LVTTL
166 MHz
12ns
5 ns
3V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
M30162040054X0PSAY
Renesas Electronics Corporation

IC RAM 16MBIT 54MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 16Mbit
  • Memory Interface: -
  • Clock Frequency: 54 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
Request a Quote
RAM
MRAM (Magnetoresistive RAM)
16Mbit
-
54 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
MT53D512M32D2DS-053-WT-ES-D-TR
Micron Technology Inc.

IC DRAM 16GBIT 1.866GHZ 200WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 16Gbit
  • Memory Interface: -
  • Clock Frequency: 1.866 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
16Gbit
-
1.866 GHz
-
-
1.1V
-30°C ~ 85°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
GD5F1GQ5REYJGR
GigaDevice Semiconductor (HK) Limited

LINEAR IC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 600µs
  • Access Time: 9.5 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x8)
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FLASH
FLASH - NAND (SLC)
1Gbit
SPI - Quad I/O, QPI, DTR
104 MHz
600µs
9.5 ns
1.7V ~ 2V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
GD25LR64ESIGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 64MBIT SPI/QUAD 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 64Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.65V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
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FLASH
FLASH - NOR (SLC)
64Mbit
SPI - Quad I/O
200 MHz
-
-
1.65V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOP