페이지 199 - 메모리 | 집적 회로(IC) | Heisener Electronics
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
S99GL01GP11FFIR10
Cypress Semiconductor Corp

IC FLASH 1GBIT 110NS SMD

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (11x13)
패키지: 64-LBGA
재고4,400
FLASH
FLASH - NOR
1Gb (128M x 8)
Parallel
-
-
-
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (11x13)
hot S29GL512P11TAI010
Cypress Semiconductor Corp

IC FLASH 512MBIT 110NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 110ns
  • Access Time: 110ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
패키지: 56-TFSOP (0.724", 18.40mm Width)
재고47,280
FLASH
FLASH - NOR
512Mb (32M x 16)
Parallel
-
110ns
110ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
M58LT128KST7ZA6E
Micron Technology Inc.

IC FLASH 128MBIT 70NS 64TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 52MHz
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-TBGA
  • Supplier Device Package: 64-TBGA (10x13)
패키지: 64-TBGA
재고5,840
FLASH
FLASH - NOR
128Mb (8M x 16)
Parallel
52MHz
70ns
70ns
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
64-TBGA
64-TBGA (10x13)
M29W160EB70ZS6E
Micron Technology Inc.

IC FLASH 16MBIT 70NS 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8, 1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (11x13)
패키지: 64-LBGA
재고3,920
FLASH
FLASH - NOR
16Mb (2M x 8, 1M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (11x13)
MT28F640J3BS-115 GMET TR
Micron Technology Inc.

IC FLASH 64MBIT 115NS 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 64Mb (8M x 8, 4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 115ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-FBGA
  • Supplier Device Package: 64-FBGA (10x13)
패키지: 64-FBGA
재고4,096
FLASH
FLASH
64Mb (8M x 8, 4M x 16)
Parallel
-
-
115ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-FBGA
64-FBGA (10x13)
AT49F4096A-90RI
Microchip Technology

IC FLASH 4MBIT 90NS 44SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8, 256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 50µs
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 44-SOIC (0.525", 13.34mm Width)
  • Supplier Device Package: 44-SOIC
패키지: 44-SOIC (0.525", 13.34mm Width)
재고3,680
FLASH
FLASH
4Mb (512K x 8, 256K x 16)
Parallel
-
50µs
90ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
44-SOIC (0.525", 13.34mm Width)
44-SOIC
71V67703S75BQGI
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 7.5NS 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 117MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
패키지: 165-TBGA
재고7,024
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
117MHz
-
7.5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
71V25761S166PFG
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고7,680
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
166MHz
-
3.5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
CY15B064Q-SXE
Cypress Semiconductor Corp

IC FRAM MEM SER 64KBIT 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 16MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,824
FRAM
FRAM (Ferroelectric RAM)
64Kb (8K x 8)
SPI
16MHz
-
-
3 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MT48LC8M16A2P-6A:L
Micron Technology Inc.

IC SDRAM 128MBIT 167MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고175,620
DRAM
SDRAM
128Mb (8M x 16)
Parallel
167MHz
12ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
hot SST39VF3202-70-4C-B3KE
Microchip Technology

IC FLASH 32MBIT 70NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA
패키지: 48-TFBGA
재고13,104
FLASH
FLASH
32Mb (2M x 16)
Parallel
-
10µs
70ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFBGA
48-TFBGA
25LC020AT-E/ST
Microchip Technology

IC EEPROM 2KBIT 10MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고4,768
EEPROM
EEPROM
2Kb (256 x 8)
SPI
10MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
MX25L1026EM1I-10G
Macronix

IC FLASH 1MBIT 104MHZ 8SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 50µs, 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,232
FLASH
FLASH - NOR
1Mb (128K x 8)
SPI
104MHz
50µs, 3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
24LC01BT-E/MNY
Microchip Technology

IC EEPROM 1KBIT 400KHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 3500ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
패키지: 8-WFDFN Exposed Pad
재고6,080
EEPROM
EEPROM
1Kb (128 x 8)
I2C
400kHz
5ms
3500ns
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
CY7C1470V33-167BZC
Cypress Semiconductor Corp

IC SRAM 72MBIT 167MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.4ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
패키지: 165-LBGA
재고6,096
SRAM
SRAM - Synchronous
72Mb (2M x 36)
Parallel
167MHz
-
3.4ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
DS24B33Q+T&R
Maxim Integrated

IC EEPROM 4KBIT 1WIRE 6TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: 1-Wire?
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 2µs
  • Voltage - Supply: 2.8 V ~ 5.25 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-TDFN-EP (3x3)
패키지: 6-WDFN Exposed Pad
재고137,790
EEPROM
EEPROM
4Kb (256 x 16)
1-Wire?
-
-
2µs
2.8 V ~ 5.25 V
-40°C ~ 85°C (TA)
Surface Mount
6-WDFN Exposed Pad
6-TDFN-EP (3x3)
W25R256JVFIQ-TR
Winbond Electronics

IC FLASH 256MBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
Request a Quote
FLASH
FLASH - NOR
256Mbit
SPI - Quad I/O
133 MHz
3ms
7 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
W25Q32JVZEJM
Winbond Electronics

IC FLASH 32MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
패키지: -
Request a Quote
FLASH
FLASH - NOR
32Mbit
SPI - Quad I/O
133 MHz
3ms
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)
IS46TR16640ED-15HBLA1-TR
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 1G

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: SSTL_15
  • Clock Frequency: 667 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: -
Request a Quote
DRAM
SDRAM - DDR3
1Gbit
SSTL_15
667 MHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
S29PL127J65BFW040
Infineon Technologies

IC FLASH 128MBIT PARALLEL 56FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 65ns
  • Access Time: 65 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-VFBGA
  • Supplier Device Package: 56-FBGA (9x7)
패키지: -
Request a Quote
FLASH
FLASH - NOR
128Mbit
Parallel
-
65ns
65 ns
2.7V ~ 3.6V
-25°C ~ 85°C (TA)
Surface Mount
56-VFBGA
56-FBGA (9x7)
IS49RL36160-125FBLI
ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT PAR 168FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: RLDRAM 3
  • Memory Size: 576Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 800 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8 ns
  • Voltage - Supply: 1.28V ~ 1.42V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-LBGA
  • Supplier Device Package: 168-FBGA (13.5x13.5)
패키지: -
Request a Quote
DRAM
RLDRAM 3
576Mbit
Parallel
800 MHz
-
8 ns
1.28V ~ 1.42V
-40°C ~ 95°C (TC)
Surface Mount
168-LBGA
168-FBGA (13.5x13.5)
GS81282Z18GB-250I
GSI Technology Inc.

IC SRAM 144MBIT PAR 119FPBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, ZBT
  • Memory Size: 144Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 250 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-FPBGA (22x14)
패키지: -
Request a Quote
SRAM
SRAM - Synchronous, ZBT
144Mbit
Parallel
250 MHz
-
-
2.3V ~ 2.7V, 3V ~ 3.6V
-40°C ~ 100°C (TJ)
Surface Mount
119-BGA
119-FPBGA (22x14)
DS28E02Q-W01-4T
Analog Devices Inc./Maxim Integrated

IC EEPROM 1KBIT 1-WIRE 6TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kbit
  • Memory Interface: 1-Wire®
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ms
  • Access Time: 2 µs
  • Voltage - Supply: 1.75V ~ 3.65V
  • Operating Temperature: -20°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-TDFN (3x3)
패키지: -
Request a Quote
EEPROM
EEPROM
1Kbit
1-Wire®
-
25ms
2 µs
1.75V ~ 3.65V
-20°C ~ 85°C (TA)
Surface Mount
6-WDFN Exposed Pad
6-TDFN (3x3)
AM27PS191A-B3A
Advanced Micro Devices

IC PROM 16KBIT PARALLEL 28CLCC

  • Memory Type: Non-Volatile
  • Memory Format: PROM
  • Technology: -
  • Memory Size: 16Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 65 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-CLCC
  • Supplier Device Package: 28-CLCC
패키지: -
Request a Quote
PROM
-
16Kbit
Parallel
-
-
65 ns
4.5V ~ 5.5V
-55°C ~ 125°C (TC)
Surface Mount
28-CLCC
28-CLCC
GD25Q256DFIGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 256MBIT SPI/QUAD 16SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 50µs, 2.4ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOP
패키지: -
재고6,219
FLASH
FLASH - NOR
256Mbit
SPI - Quad I/O
104 MHz
50µs, 2.4ms
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOP
S29WS256P0PBAW000
Infineon Technologies

IC MEMORY NOR SMD

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
S25HS02GTDPBHB053
Infineon Technologies

IC FLASH 2GBIT SPI/QUAD 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
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FLASH
FLASH - NOR (SLC)
2Gbit
SPI - Quad I/O, QPI
133 MHz
1.7ms
6 ns
1.7V ~ 2V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-BGA (8x6)
GD25WD20EK6IGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 2MBIT SPI/DUAL 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 2Mbit
  • Memory Interface: SPI - Dual I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 100µs, 6ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.65V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-XFDFN Exposed Pad
  • Supplier Device Package: 8-USON (1.5x1.5)
패키지: -
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FLASH
FLASH - NOR (SLC)
2Mbit
SPI - Dual I/O
104 MHz
100µs, 6ms
6 ns
1.65V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-XFDFN Exposed Pad
8-USON (1.5x1.5)