페이지 2016 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
AS4C64M16D3L-12BAN	Alliance Memory, Inc.	IC SDRAM 1GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-FBGA (13x8)	패키지: 96-VFBGA	재고4,480	DRAM	SDRAM - DDR3L	1Gb (64M x 16)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	-40°C ~ 105°C (TC)	Surface Mount	96-VFBGA	96-FBGA (13x8)
W25Q64JVDAIQ	Winbond Electronics	IC FLASH 64MBIT 104MHZ 8DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고2,768	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI	133MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-DIP (0.300", 7.62mm)	8-PDIP
IS25CD025-JDLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 256KBIT 100MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 100MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고4,000	FLASH	FLASH	256Kb (32K x 8)	SPI	100MHz	5ms	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY14B104N-BA45XC	Cypress Semiconductor Corp	IC NVSRAM 4MBIT 45NS 48FBGA Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-FBGA (6x10)	패키지: 48-TFBGA	재고4,672	NVSRAM	NVSRAM (Non-Volatile SRAM)	4Mb (256K x 16)	Parallel	-	45ns	45ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFBGA	48-FBGA (6x10)
M29W640GSL70ZF6E	Micron Technology Inc.	IC FLASH 64MBIT 70NS 64TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-TBGA (10x13)	패키지: 64-TBGA	재고62,268	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-TBGA	64-TBGA (10x13)
CY7C1061GE18-15ZSXI	Cypress Semiconductor Corp	IC SRAM 16MBIT 15NS 54TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고4,944	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	15ns	15ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
7006L25PF8	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 25NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (16K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	패키지: 64-LQFP	재고5,376	SRAM	SRAM - Dual Port, Asynchronous	128Kb (16K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
71V65603S150BG	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 150MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고4,464	SRAM	SRAM - Synchronous ZBT	9Mb (256K x 36)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
EMF8132A3PF-DV-F-D	Micron Technology Inc.	LPDDR3 SPECIAL/CUSTOM PLASTIC VF Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,736	-	-	-	-	-	-	-	-	-	-	-	-
IS46DR16320D-25DBLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 400MHZ 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	패키지: 84-TFBGA	재고4,448	DRAM	SDRAM - DDR2	512Mb (32M x 16)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
IS45S16800F-6CTLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 166MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고2,160	DRAM	SDRAM	128Mb (8M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
S29GL064S80DHV023	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 80ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,312	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	60ns	80ns	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
W25Q16FWUUIQ TR	Winbond Electronics	IC FLASH 16MBIT 104MHZ 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-USON (4x3)	패키지: 8-UDFN Exposed Pad	재고5,904	FLASH	FLASH - NOR	16Mb (2M x 8)	SPI	104MHz	3ms	-	1.65 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	8-UDFN Exposed Pad	8-USON (4x3)
24LC04B-E/MS	Microchip Technology	IC EEPROM 4KBIT 400KHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 8 x 2) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고5,616	EEPROM	EEPROM	4Kb (256 x 8 x 2)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
CY62148EV30LL-45BVI	Cypress Semiconductor Corp	IC SRAM 4MBIT 45NS 36VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 36-VFBGA Supplier Device Package: 36-VFBGA (6x8)	패키지: 36-VFBGA	재고6,228	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	45ns	45ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	36-VFBGA	36-VFBGA (6x8)
DS1245W-100+	Maxim Integrated	IC NVSRAM 1MBIT 100NS 32EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP Module (0.600", 15.24mm) Supplier Device Package: 32-EDIP	패키지: 32-DIP Module (0.600", 15.24mm)	재고5,040	NVSRAM	NVSRAM (Non-Volatile SRAM)	1Mb (128K x 8)	Parallel	-	100ns	100ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Through Hole	32-DIP Module (0.600", 15.24mm)	32-EDIP
RM24C128C-LMAI-T	Adesto Technologies	IC EEPROM 128KBIT 1MHZ 8DFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128kb (64B Page Size) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 100µs, 2.5ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	패키지: 8-UFDFN Exposed Pad	재고5,808	EEPROM	EEPROM	128kb (64B Page Size)	I2C	1MHz	100µs, 2.5ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
IS66WVH8M8BLL-100B1LI	ISSI, Integrated Silicon Solution Inc	IC PSRAM 64MBIT 100MHZ 24TBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 64Mb (8M x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: 40ns Access Time: 40ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	패키지: 24-TBGA	재고14,916	PSRAM	PSRAM (Pseudo SRAM)	64Mb (8M x 8)	Parallel	100MHz	40ns	40ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
AS7C1024B-15TJINTR	Alliance Memory, Inc.	IC SRAM 1M PARALLEL 32TSOP I Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP I	패키지: 32-TFSOP (0.724", 18.40mm Width)	재고2,048	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP I
S25FL064LABNFA011	Cypress Semiconductor Corp	IC 64 MB FLASH MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-WSON (5x6)	패키지: 8-WFDFN Exposed Pad	재고2,496	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI	108MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-WSON (5x6)
70V08S25PFI	IDT, Integrated Device Technology Inc	IC SRAM 512K PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고4,048	SRAM	SRAM - Dual Port, Asynchronous	512Kb (64K x 8)	Parallel	-	25ns	25ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MT62F4D1ADS-DC-TR	Micron Technology Inc.	LPDDR5 32G 1GX32 FBGA QDP Y31M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CY7C0241-15AC	Cypress Semiconductor Corp	IC SRAM 72KBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 72Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: -	Request a Quote	SRAM	SRAM - Dual Port, Asynchronous	72Kbit	Parallel	-	15ns	15 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
GD25D20ETIGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 2MBIT SPI/DUAL 8SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 2Mbit Memory Interface: SPI - Dual I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 50µs, 4ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	2Mbit	SPI - Dual I/O	104 MHz	50µs, 4ms	6 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
MX25U6432FZNI02	Macronix	IC FLASH 64MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 40µs, 3ms Access Time: - Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	패키지: -	재고119,121	FLASH	FLASH - NOR	64Mbit	SPI - Quad I/O, QPI	133 MHz	40µs, 3ms	-	1.65V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
SM662PAD-BDSS	Silicon Motion, Inc.	IC FLASH 320GBIT EMMC 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 320Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-BGA (11.5x13)	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	320Gbit	eMMC	-	-	-	-	-40°C ~ 85°C	Surface Mount	153-TFBGA	153-BGA (11.5x13)
71V256SA12PZI	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT PARALLEL 28TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	256Kbit	Parallel	-	12ns	12 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP
IS45S32200N-7TLA1-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 64MBIT PAR 86TSOP II Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mbit Memory Interface: LVTTL Clock Frequency: 143 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	패키지: -	Request a Quote	DRAM	SDRAM	64Mbit	LVTTL	143 MHz	-	5.4 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II

AS4C64M16D3L-12BAN

Alliance Memory, Inc.

IC SDRAM 1GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-FBGA (13x8)

패키지: 96-VFBGA

재고4,480

DRAM

SDRAM - DDR3L

1Gb (64M x 16)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

-40°C ~ 105°C (TC)

Surface Mount

96-VFBGA

96-FBGA (13x8)

W25Q64JVDAIQ

Winbond Electronics

IC FLASH 64MBIT 104MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고2,768

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI

133MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-DIP (0.300", 7.62mm)

8-PDIP

IS25CD025-JDLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 256KBIT 100MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고4,000

FLASH

256Kb (32K x 8)

SPI

100MHz

5ms

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY14B104N-BA45XC

Cypress Semiconductor Corp

IC NVSRAM 4MBIT 45NS 48FBGA

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (6x10)

패키지: 48-TFBGA

재고4,672

NVSRAM

NVSRAM (Non-Volatile SRAM)

4Mb (256K x 16)

Parallel

-

45ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFBGA

48-FBGA (6x10)

M29W640GSL70ZF6E

Micron Technology Inc.

IC FLASH 64MBIT 70NS 64TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-TBGA (10x13)

패키지: 64-TBGA

재고62,268

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-TBGA

64-TBGA (10x13)

CY7C1061GE18-15ZSXI

Cypress Semiconductor Corp

IC SRAM 16MBIT 15NS 54TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고4,944

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

15ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

7006L25PF8

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 25NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (16K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

패키지: 64-LQFP

재고5,376

SRAM

SRAM - Dual Port, Asynchronous

128Kb (16K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

71V65603S150BG

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고4,464

SRAM

SRAM - Synchronous ZBT

9Mb (256K x 36)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

EMF8132A3PF-DV-F-D

Micron Technology Inc.

LPDDR3 SPECIAL/CUSTOM PLASTIC VF

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,736

-

IS46DR16320D-25DBLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 400MHZ 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

패키지: 84-TFBGA

재고4,448

DRAM

SDRAM - DDR2

512Mb (32M x 16)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

IS45S16800F-6CTLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고2,160

DRAM

SDRAM

128Mb (8M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

S29GL064S80DHV023

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,312

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

60ns

80ns

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

-

W25Q16FWUUIQ TR

Winbond Electronics

IC FLASH 16MBIT 104MHZ 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-USON (4x3)

패키지: 8-UDFN Exposed Pad

재고5,904

FLASH

FLASH - NOR

16Mb (2M x 8)

SPI

104MHz

3ms

-

1.65 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

8-UDFN Exposed Pad

8-USON (4x3)

24LC04B-E/MS

Microchip Technology

IC EEPROM 4KBIT 400KHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 8 x 2)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고5,616

EEPROM

4Kb (256 x 8 x 2)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

CY62148EV30LL-45BVI

Cypress Semiconductor Corp

IC SRAM 4MBIT 45NS 36VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-VFBGA
Supplier Device Package: 36-VFBGA (6x8)

패키지: 36-VFBGA

재고6,228

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

45ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

36-VFBGA

36-VFBGA (6x8)

DS1245W-100+

Maxim Integrated

IC NVSRAM 1MBIT 100NS 32EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP Module (0.600", 15.24mm)
Supplier Device Package: 32-EDIP

패키지: 32-DIP Module (0.600", 15.24mm)

재고5,040

NVSRAM

NVSRAM (Non-Volatile SRAM)

1Mb (128K x 8)

Parallel

-

100ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Through Hole

32-DIP Module (0.600", 15.24mm)

32-EDIP

RM24C128C-LMAI-T

Adesto Technologies

IC EEPROM 128KBIT 1MHZ 8DFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128kb (64B Page Size)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 100µs, 2.5ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

패키지: 8-UFDFN Exposed Pad

재고5,808

EEPROM

128kb (64B Page Size)

I2C

1MHz

100µs, 2.5ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

IS66WVH8M8BLL-100B1LI

ISSI, Integrated Silicon Solution Inc

IC PSRAM 64MBIT 100MHZ 24TBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mb (8M x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: 40ns
Access Time: 40ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

패키지: 24-TBGA

재고14,916

PSRAM

PSRAM (Pseudo SRAM)

64Mb (8M x 8)

Parallel

100MHz

40ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

AS7C1024B-15TJINTR

Alliance Memory, Inc.

IC SRAM 1M PARALLEL 32TSOP I

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I

패키지: 32-TFSOP (0.724", 18.40mm Width)

재고2,048

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

15ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP I

S25FL064LABNFA011

Cypress Semiconductor Corp

IC 64 MB FLASH MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-WSON (5x6)

패키지: 8-WFDFN Exposed Pad

재고2,496

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI

108MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-WSON (5x6)

70V08S25PFI

IDT, Integrated Device Technology Inc

IC SRAM 512K PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고4,048

SRAM

SRAM - Dual Port, Asynchronous

512Kb (64K x 8)

Parallel

-

25ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MT62F4D1ADS-DC-TR

Micron Technology Inc.

LPDDR5 32G 1GX32 FBGA QDP Y31M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

CY7C0241-15AC

Cypress Semiconductor Corp

IC SRAM 72KBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 72Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: -

Request a Quote

SRAM

SRAM - Dual Port, Asynchronous

72Kbit

Parallel

-

15ns

15 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

GD25D20ETIGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 2MBIT SPI/DUAL 8SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 2Mbit
Memory Interface: SPI - Dual I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 50µs, 4ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

2Mbit

SPI - Dual I/O

104 MHz

50µs, 4ms

6 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

MX25U6432FZNI02

Macronix

IC FLASH 64MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 40µs, 3ms
Access Time: -
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

패키지: -

재고119,121

FLASH

FLASH - NOR

64Mbit

SPI - Quad I/O, QPI

133 MHz

40µs, 3ms

-

1.65V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

SM662PAD-BDSS

Silicon Motion, Inc.

IC FLASH 320GBIT EMMC 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 320Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-BGA (11.5x13)

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

320Gbit

eMMC

-

-40°C ~ 85°C

Surface Mount

153-TFBGA

153-BGA (11.5x13)

71V256SA12PZI

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT PARALLEL 28TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

256Kbit

Parallel

-

12ns

12 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP

IS45S32200N-7TLA1-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PAR 86TSOP II

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mbit
Memory Interface: LVTTL
Clock Frequency: 143 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

패키지: -

Request a Quote

DRAM

SDRAM

64Mbit

LVTTL

143 MHz

-

5.4 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II