페이지 2038 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS29GL512S-11TFV010	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,120	FLASH	FLASH - NOR	512Mb (64M x 8)	Parallel	-	60ns	110ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F64G08AECABH1-10IT:A TR	Micron Technology Inc.	IC FLASH 64GBIT 100MHZ VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,096	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	100MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
AK93C55CL	AKM Semiconductor Inc.	IC EEPROM 2KB SER CMOS 8SON Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (128 x 16) Memory Interface: SPI Clock Frequency: 4MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 8-SON	패키지: -	재고2,128	EEPROM	EEPROM	2Kb (128 x 16)	SPI	4MHz	-	-	1.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	-	8-SON
CY14MB064Q1B-SXIT	Cypress Semiconductor Corp	IC NVSRAM 64KBIT 40MHZ 8SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Memory Interface: SPI Clock Frequency: 40MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,448	NVSRAM	NVSRAM (Non-Volatile SRAM)	64Kb (8K x 8)	SPI	40MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SST39LF020-55-4I-NHE	Microchip Technology	IC FLASH 2MBIT 55NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20µs Access Time: 55ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고5,392	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	20µs	55ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT29LV040A-15JI	Microchip Technology	IC FLASH 4MBIT 150NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ms Access Time: 150ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고16,380	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	20ms	150ns	3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
709099L9PFI	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 9NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 9ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고6,336	SRAM	SRAM - Dual Port, Synchronous	1Mb (128K x 8)	Parallel	-	-	9ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
AT25DF011-MAHNHR-T	Adesto Technologies	IC FLASH 1MBIT 85MHZ 8UDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 12µs, 5ms Access Time: - Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	패키지: 8-UFDFN Exposed Pad	재고6,704	FLASH	FLASH	1Mb (128K x 8)	SPI	104MHz	12µs, 5ms	-	1.7 V ~ 3.6 V	-40°C ~ 125°C (TC)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
W25Q80DVZPIG TR	Winbond Electronics	IC FLASH 8MBIT 104MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	패키지: 8-WDFN Exposed Pad	재고3,104	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI	104MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
BR93L56FVT-WE2	Rohm Semiconductor	IC EEPROM 2KBIT 2MHZ 8TSSOP-B Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (128 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP-B	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고3,568	EEPROM	EEPROM	2Kb (128 x 16)	SPI	2MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP-B
AS4C16M32MD1-5BCN	Alliance Memory, Inc.	IC SDRAM 512MBIT 200MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile DDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TJ) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-FBGA (8x13)	패키지: 90-VFBGA	재고7,764	DRAM	SDRAM - Mobile DDR	512Mb (16M x 32)	Parallel	200MHz	15ns	5ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TJ)	Surface Mount	90-VFBGA	90-FBGA (8x13)
DS1249Y-70#	Maxim Integrated	IC NVSRAM 2MBIT 70NS 32EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP Module (0.600", 15.24mm) Supplier Device Package: 32-EDIP	패키지: 32-DIP Module (0.600", 15.24mm)	재고7,216	NVSRAM	NVSRAM (Non-Volatile SRAM)	2Mb (256K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	32-DIP Module (0.600", 15.24mm)	32-EDIP
AS4C256M16D3B-12BAN	Alliance Memory, Inc.	IC DRAM 4G PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (13.5x9)	패키지: 96-TFBGA	재고9,024	DRAM	SDRAM - DDR3	4Gb (256M x 16)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-FBGA (13.5x9)
S25FL256LAGNFV011	Cypress Semiconductor Corp	IC NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	패키지: 8-WDFN Exposed Pad	재고7,232	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O, QPI	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
MT44K64M18RB-083E:A TR	Micron Technology Inc.	IC RLDRAM 3 1.125GBIT 64MX18 TBG Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 1.125Gb (64Mb x 18) Memory Interface: Parallel Clock Frequency: 1200MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,456	DRAM	DRAM	1.125Gb (64Mb x 18)	Parallel	1200MHz	-	7.5ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
ATXP032-CCUE-T	Adesto Technologies	24-BGA 6X8MM IND TEMP 1.8V Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (4M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-CBGA (6x8)	패키지: 24-VBGA	재고3,152	FLASH	FLASH	32Mb (4M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	-	-	1.65V ~ 1.95V	-40°C ~ 85°C	Surface Mount	24-VBGA	24-CBGA (6x8)
BY25Q16BSMIG-R	BYTe Semiconductor	16 MBIT, 3.0V (2.7V TO 3.6V), -4 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 16Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108 MHz Write Cycle Time - Word, Page: 50µs, 2.4ms Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-USON (2x3)	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	16Mbit	SPI - Quad I/O, QPI	108 MHz	50µs, 2.4ms	7 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-USON (2x3)
MT62F1536M32D4DS-023-WT-ES-B-TR	Micron Technology Inc.	LPDDR5 48G 1.5GX32 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
R1QEA7236ABG-20IB0	Renesas Electronics Corporation	STANDARD SRAM, 2MX36, 0.45NS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SM662GBE-BFSS	Silicon Motion, Inc.	IC FLASH 640GBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 640Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	640Gbit	eMMC	-	-	-	-	-40°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)
CY15V108QI-20LPXIT	Infineon Technologies	IC FRAM 8MBIT SPI 20MHZ 8GQFN Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 8Mbit Memory Interface: SPI Clock Frequency: 20 MHz Write Cycle Time - Word, Page: - Access Time: 20 ns Voltage - Supply: 1.71V ~ 1.89V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UQFN Supplier Device Package: 8-GQFN (3.23x3.28)	패키지: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	8Mbit	SPI	20 MHz	-	20 ns	1.71V ~ 1.89V	-40°C ~ 85°C (TA)	Surface Mount	8-UQFN	8-GQFN (3.23x3.28)
MTFC4GLGDQ-AIT-A-TR	Micron Technology Inc.	IC FLASH 32GBIT MMC 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 32Gbit Memory Interface: MMC Clock Frequency: 52 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-LBGA (14x18)	패키지: -	Request a Quote	FLASH	FLASH - NAND	32Gbit	MMC	52 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	100-LBGA	100-LBGA (14x18)
FM93C46LZMT8X	Fairchild Semiconductor	IC EEPROM 1KBIT MICROWIRE 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kbit Memory Interface: Microwire Clock Frequency: 250 kHz Write Cycle Time - Word, Page: 15ms Access Time: - Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	Request a Quote	EEPROM	EEPROM	1Kbit	Microwire	250 kHz	15ms	-	2.7V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CAT93C57K-26528T	Catalyst Semiconductor Inc.	IC EEPROM 2KBIT MICROWIRE 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kbit Memory Interface: Microwire Clock Frequency: 1 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	EEPROM	EEPROM	2Kbit	Microwire	1 MHz	-	-	1.8V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AS4C16M16SB-6TINTR	Alliance Memory, Inc.	MEMORY Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 12ns Access Time: 5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: -	Request a Quote	DRAM	SDRAM	256Mbit	LVTTL	166 MHz	12ns	5 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
0418A41QLAA-4	IBM	IC SRAM 4MBIT HSTL 119BGA Memory Type: - Memory Format: SRAM Technology: - Memory Size: 4Mbit Memory Interface: HSTL Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 119-BBGA Supplier Device Package: 119-BGA (17x7)	패키지: -	Request a Quote	SRAM	-	4Mbit	HSTL	-	-	-	-	-	Surface Mount	119-BBGA	119-BGA (17x7)
CY7C1361B-100BGCT	Cypress Semiconductor Corp	IC SRAM 9MBIT PAR 119PBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR Memory Size: 9Mbit Memory Interface: Parallel Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 8.5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: -	Request a Quote	SRAM	SRAM - Synchronous, SDR	9Mbit	Parallel	100 MHz	-	8.5 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
MT62F3G32D8DV-023-AUT-B-TR	Micron Technology Inc.	LPDDR5 96G 3GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 96Gbit Memory Interface: Parallel Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 125°C Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	96Gbit	Parallel	4.266 GHz	-	-	-	-40°C ~ 125°C	-	-	-

IS29GL512S-11TFV010

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,120

FLASH

FLASH - NOR

512Mb (64M x 8)

Parallel

-

60ns

110ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT29F64G08AECABH1-10IT:A TR

Micron Technology Inc.

IC FLASH 64GBIT 100MHZ VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,096

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

100MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

AK93C55CL

AKM Semiconductor Inc.

IC EEPROM 2KB SER CMOS 8SON

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (128 x 16)
Memory Interface: SPI
Clock Frequency: 4MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: 8-SON

패키지: -

재고2,128

EEPROM

2Kb (128 x 16)

SPI

4MHz

-

1.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

-

8-SON

CY14MB064Q1B-SXIT

Cypress Semiconductor Corp

IC NVSRAM 64KBIT 40MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: SPI
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,448

NVSRAM

NVSRAM (Non-Volatile SRAM)

64Kb (8K x 8)

SPI

40MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SST39LF020-55-4I-NHE

Microchip Technology

IC FLASH 2MBIT 55NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20µs
Access Time: 55ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고5,392

FLASH

2Mb (256K x 8)

Parallel

-

20µs

55ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT29LV040A-15JI

Microchip Technology

IC FLASH 4MBIT 150NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ms
Access Time: 150ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고16,380

FLASH

4Mb (512K x 8)

Parallel

-

20ms

150ns

3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

709099L9PFI

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 9NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 9ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고6,336

SRAM

SRAM - Dual Port, Synchronous

1Mb (128K x 8)

Parallel

-

9ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

AT25DF011-MAHNHR-T

Adesto Technologies

IC FLASH 1MBIT 85MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 12µs, 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

패키지: 8-UFDFN Exposed Pad

재고6,704

FLASH

1Mb (128K x 8)

SPI

104MHz

12µs, 5ms

-

1.7 V ~ 3.6 V

-40°C ~ 125°C (TC)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

W25Q80DVZPIG TR

Winbond Electronics

IC FLASH 8MBIT 104MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

패키지: 8-WDFN Exposed Pad

재고3,104

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI

104MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

BR93L56FVT-WE2

Rohm Semiconductor

IC EEPROM 2KBIT 2MHZ 8TSSOP-B

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (128 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고3,568

EEPROM

2Kb (128 x 16)

SPI

2MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP-B

AS4C16M32MD1-5BCN

Alliance Memory, Inc.

IC SDRAM 512MBIT 200MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile DDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TJ)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-FBGA (8x13)

패키지: 90-VFBGA

재고7,764

DRAM

SDRAM - Mobile DDR

512Mb (16M x 32)

Parallel

200MHz

15ns

5ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TJ)

Surface Mount

90-VFBGA

90-FBGA (8x13)

DS1249Y-70#

Maxim Integrated

IC NVSRAM 2MBIT 70NS 32EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP Module (0.600", 15.24mm)
Supplier Device Package: 32-EDIP

패키지: 32-DIP Module (0.600", 15.24mm)

재고7,216

NVSRAM

NVSRAM (Non-Volatile SRAM)

2Mb (256K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

32-DIP Module (0.600", 15.24mm)

32-EDIP

AS4C256M16D3B-12BAN

Alliance Memory, Inc.

IC DRAM 4G PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13.5x9)

패키지: 96-TFBGA

재고9,024

DRAM

SDRAM - DDR3

4Gb (256M x 16)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-FBGA (13.5x9)

S25FL256LAGNFV011

Cypress Semiconductor Corp

IC NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

패키지: 8-WDFN Exposed Pad

재고7,232

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O, QPI

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)

MT44K64M18RB-083E:A TR

Micron Technology Inc.

IC RLDRAM 3 1.125GBIT 64MX18 TBG

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 1.125Gb (64Mb x 18)
Memory Interface: Parallel
Clock Frequency: 1200MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,456

DRAM

1.125Gb (64Mb x 18)

Parallel

1200MHz

-

7.5ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

ATXP032-CCUE-T

Adesto Technologies

24-BGA 6X8MM IND TEMP 1.8V

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-CBGA (6x8)

패키지: 24-VBGA

재고3,152

FLASH

32Mb (4M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

-

1.65V ~ 1.95V

-40°C ~ 85°C

Surface Mount

24-VBGA

24-CBGA (6x8)

BY25Q16BSMIG-R

BYTe Semiconductor

16 MBIT, 3.0V (2.7V TO 3.6V), -4

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 16Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

16Mbit

SPI - Quad I/O, QPI

108 MHz

50µs, 2.4ms

7 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-USON (2x3)

MT62F1536M32D4DS-023-WT-ES-B-TR

Micron Technology Inc.

LPDDR5 48G 1.5GX32 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

R1QEA7236ABG-20IB0

Renesas Electronics Corporation

STANDARD SRAM, 2MX36, 0.45NS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

SM662GBE-BFSS

Silicon Motion, Inc.

IC FLASH 640GBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 640Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

640Gbit

eMMC

-

-40°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)

CY15V108QI-20LPXIT

Infineon Technologies

IC FRAM 8MBIT SPI 20MHZ 8GQFN

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 8Mbit
Memory Interface: SPI
Clock Frequency: 20 MHz
Write Cycle Time - Word, Page: -
Access Time: 20 ns
Voltage - Supply: 1.71V ~ 1.89V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Supplier Device Package: 8-GQFN (3.23x3.28)

패키지: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

8Mbit

SPI

20 MHz

-

20 ns

1.71V ~ 1.89V

-40°C ~ 85°C (TA)

Surface Mount

8-UQFN

8-GQFN (3.23x3.28)

MTFC4GLGDQ-AIT-A-TR

Micron Technology Inc.

IC FLASH 32GBIT MMC 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 32Gbit
Memory Interface: MMC
Clock Frequency: 52 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LBGA (14x18)

패키지: -

Request a Quote

FLASH

FLASH - NAND

32Gbit

MMC

52 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

100-LBGA

100-LBGA (14x18)

FM93C46LZMT8X

Fairchild Semiconductor

IC EEPROM 1KBIT MICROWIRE 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kbit
Memory Interface: Microwire
Clock Frequency: 250 kHz
Write Cycle Time - Word, Page: 15ms
Access Time: -
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: -

Request a Quote

EEPROM

1Kbit

Microwire

250 kHz

15ms

-

2.7V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CAT93C57K-26528T

Catalyst Semiconductor Inc.

IC EEPROM 2KBIT MICROWIRE 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kbit
Memory Interface: Microwire
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

EEPROM

2Kbit

Microwire

1 MHz

-

1.8V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AS4C16M16SB-6TINTR

Alliance Memory, Inc.

MEMORY

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: -

Request a Quote

DRAM

SDRAM

256Mbit

LVTTL

166 MHz

12ns

5 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

0418A41QLAA-4

IBM

IC SRAM 4MBIT HSTL 119BGA

Memory Type: -
Memory Format: SRAM
Technology: -
Memory Size: 4Mbit
Memory Interface: HSTL
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 119-BBGA
Supplier Device Package: 119-BGA (17x7)

패키지: -

Request a Quote

SRAM

-

4Mbit

HSTL

-

Surface Mount

119-BBGA

119-BGA (17x7)

CY7C1361B-100BGCT

Cypress Semiconductor Corp

IC SRAM 9MBIT PAR 119PBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 9Mbit
Memory Interface: Parallel
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 8.5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: -

Request a Quote

SRAM

SRAM - Synchronous, SDR

9Mbit

Parallel

100 MHz

-

8.5 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

MT62F3G32D8DV-023-AUT-B-TR

Micron Technology Inc.

LPDDR5 96G 3GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 96Gbit
Memory Interface: Parallel
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 125°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

96Gbit

Parallel

4.266 GHz

-

-40°C ~ 125°C

-