페이지 2050 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DS1220Y-100+	Maxim Integrated	IC SRAM 16KBIT 100NS 24DIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 24-DIP Module (0.600", 15.24mm) Supplier Device Package: 24-EDIP	패키지: 24-DIP Module (0.600", 15.24mm)	재고21,696	NVSRAM	NVSRAM (Non-Volatile SRAM)	16Kb (2K x 8)	Parallel	-	100ns	100ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	24-DIP Module (0.600", 15.24mm)	24-EDIP
MT46V64M8P-5B L IT:J TR	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	패키지: 66-TSSOP (0.400", 10.16mm Width)	재고6,128	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	-40°C ~ 85°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
93C76B-E/MS	Microchip Technology	IC EEPROM 8KBIT 3MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (512 x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고2,928	EEPROM	EEPROM	8Kb (512 x 16)	SPI	3MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
DS2030W-100#	Maxim Integrated	IC NVSRAM 256KBIT 100NS 256BGA Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 256-BGA Supplier Device Package: 256-BGA (27x27)	패키지: 256-BGA	재고7,952	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	100ns	100ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	256-BGA	256-BGA (27x27)
CY7C185-20PC	Cypress Semiconductor Corp	IC SRAM 64KBIT 20NS 28DIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 28-DIP (0.300", 7.62mm) Supplier Device Package: 28-PDIP	패키지: 28-DIP (0.300", 7.62mm)	재고5,168	SRAM	SRAM - Asynchronous	64Kb (8K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	28-DIP (0.300", 7.62mm)	28-PDIP
AT28BV16-25SI	Microchip Technology	IC EEPROM 16KBIT 250NS 24SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 3ms Access Time: 250ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 24-SOIC (0.295", 7.50mm Width) Supplier Device Package: 24-SOIC	패키지: 24-SOIC (0.295", 7.50mm Width)	재고2,256	EEPROM	EEPROM	16Kb (2K x 8)	Parallel	-	3ms	250ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	24-SOIC (0.295", 7.50mm Width)	24-SOIC
AT28HC256E-90UM/883	Microchip Technology	IC EEPROM 256KBIT 90NS 28CPGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Through Hole Package / Case: 28-BCPGA Supplier Device Package: 28-CPGA (13.55x15.06)	패키지: 28-BCPGA	재고5,856	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	90ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TC)	Through Hole	28-BCPGA	28-CPGA (13.55x15.06)
71321LA20TF	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 20NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	패키지: 64-LQFP	재고5,264	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (10x10)
IS45S32200L-7BLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 64MBIT 143MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (2M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고3,168	DRAM	SDRAM	64Mb (2M x 32)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
71V424L12PHGI8	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 12NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고6,144	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
PCF8594C-2T/02,118	NXP	IC EEPROM 4KBIT 100KHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: I2C Clock Frequency: 100kHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.5 V ~ 6.0 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,624	EEPROM	EEPROM	4Kb (512 x 8)	I2C	100kHz	-	-	2.5 V ~ 6.0 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
24AA044-E/SN	Microchip Technology	IC EEPROM 4KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 8 x 2) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 400ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,312	EEPROM	EEPROM	4Kb (256 x 8 x 2)	I2C	1MHz	5ms	400ns	1.7 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
S29GL512S11DHI020	Cypress Semiconductor Corp	IC FLASH 512MBIT 110NS 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (9x9)	패키지: 64-LBGA	재고6,036	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	-	60ns	110ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (9x9)
M24C04-WBN6P	STMicroelectronics	IC EEPROM 4KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고78,660	EEPROM	EEPROM	4Kb (512 x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IS62C256AL-45ULI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 256KBIT 45NS 28SOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.330", 8.38mm Width) Supplier Device Package: 28-SOP	패키지: 28-SOIC (0.330", 8.38mm Width)	재고13,872	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	28-SOIC (0.330", 8.38mm Width)	28-SOP
24LC256T-I/SN	Microchip Technology	IC EEPROM 256KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고233,496	EEPROM	EEPROM	256Kb (32K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
BR25H320FVT-2CE2	Rohm Semiconductor	IC EEPROM 32K SPI 10MHZ 8TSSOPB Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP-B	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고29,496	EEPROM	EEPROM	32Kb (4K x 8)	SPI	10MHz	4ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP-B
S29GL128P90FAIR12	Cypress Semiconductor Corp	IC FLASH 128M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	패키지: 64-LBGA	재고2,240	FLASH	FLASH - NOR	128Mb (16M x 8)	Parallel	-	90ns	90ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
S25FL064LABBHB020	Cypress Semiconductor Corp	IC 64 MB FLASH MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	패키지: 24-TBGA	재고2,432	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI	108MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-BGA (8x6)
MTFC64GAOAMEA-WT ES TR	Micron Technology Inc.	MASSFLASH/CONTROLLER 512G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,552	-	-	-	-	-	-	-	-	-	-	-	-
AS4C512M8D3LB-12BCN	Alliance Memory, Inc.	IC DRAM 4G PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (10.5x9)	패키지: 78-VFBGA	재고4,880	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-VFBGA	78-FBGA (10.5x9)
M95256-DRMF3TG/K	STMicroelectronics	IC EEPROM 256KBIT 20MHZ 8UFDFPN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-MLP (2x3)	패키지: 8-WFDFN Exposed Pad	재고6,416	EEPROM	EEPROM	256Kb (32K x 8)	SPI	20MHz	4ms	-	1.8V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-MLP (2x3)
S99GL128P0173	Infineon Technologies	IC FLASH 128MBIT PARALLEL Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	FLASH	FLASH - NOR	128Mbit	Parallel	-	-	-	-	-	-	-	-
MTFC64GBCAQDQ-AAT-ES	Micron Technology Inc.	EMMC 512G LBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
70825S20PFGI8	Renesas Electronics Corporation	IC RAM Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 128Kbit Memory Interface: Parallel Clock Frequency: 40 MHz Write Cycle Time - Word, Page: 20ns Access Time: 20 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-TQFP (14x14)	패키지: -	Request a Quote	SRAM	SRAM	128Kbit	Parallel	40 MHz	20ns	20 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	80-LQFP	80-TQFP (14x14)
27S29ADC	Rochester Electronics, LLC	4,096-BIT (512X8) BIPOLAR PROM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
QS7024A-35TF	Quality Semiconductor	MULTI-PORT SRAM, 4KX16, 35NS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
P06192-001-C	ProLabs	HP P06192-001 Compatible Factory Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

DS1220Y-100+

Maxim Integrated

IC SRAM 16KBIT 100NS 24DIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 24-DIP Module (0.600", 15.24mm)
Supplier Device Package: 24-EDIP

패키지: 24-DIP Module (0.600", 15.24mm)

재고21,696

NVSRAM

NVSRAM (Non-Volatile SRAM)

16Kb (2K x 8)

Parallel

-

100ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

24-DIP Module (0.600", 15.24mm)

24-EDIP

MT46V64M8P-5B L IT:J TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

패키지: 66-TSSOP (0.400", 10.16mm Width)

재고6,128

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

-40°C ~ 85°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

93C76B-E/MS

Microchip Technology

IC EEPROM 8KBIT 3MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (512 x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고2,928

EEPROM

8Kb (512 x 16)

SPI

3MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

DS2030W-100#

Maxim Integrated

IC NVSRAM 256KBIT 100NS 256BGA

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-BGA
Supplier Device Package: 256-BGA (27x27)

패키지: 256-BGA

재고7,952

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

100ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

256-BGA

256-BGA (27x27)

CY7C185-20PC

Cypress Semiconductor Corp

IC SRAM 64KBIT 20NS 28DIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.300", 7.62mm)
Supplier Device Package: 28-PDIP

패키지: 28-DIP (0.300", 7.62mm)

재고5,168

SRAM

SRAM - Asynchronous

64Kb (8K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

28-DIP (0.300", 7.62mm)

28-PDIP

AT28BV16-25SI

Microchip Technology

IC EEPROM 16KBIT 250NS 24SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 3ms
Access Time: 250ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 24-SOIC

패키지: 24-SOIC (0.295", 7.50mm Width)

재고2,256

EEPROM

16Kb (2K x 8)

Parallel

-

3ms

250ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

24-SOIC (0.295", 7.50mm Width)

24-SOIC

AT28HC256E-90UM/883

Microchip Technology

IC EEPROM 256KBIT 90NS 28CPGA

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Through Hole
Package / Case: 28-BCPGA
Supplier Device Package: 28-CPGA (13.55x15.06)

패키지: 28-BCPGA

재고5,856

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

90ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TC)

Through Hole

28-BCPGA

28-CPGA (13.55x15.06)

71321LA20TF

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 20NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

패키지: 64-LQFP

재고5,264

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (10x10)

IS45S32200L-7BLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 143MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (2M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고3,168

DRAM

SDRAM

64Mb (2M x 32)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

71V424L12PHGI8

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 12NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고6,144

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

PCF8594C-2T/02,118

NXP

IC EEPROM 4KBIT 100KHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: I2C
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.5 V ~ 6.0 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,624

EEPROM

4Kb (512 x 8)

I2C

100kHz

-

2.5 V ~ 6.0 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

24AA044-E/SN

Microchip Technology

IC EEPROM 4KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 8 x 2)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,312

EEPROM

4Kb (256 x 8 x 2)

I2C

1MHz

5ms

400ns

1.7 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

S29GL512S11DHI020

Cypress Semiconductor Corp

IC FLASH 512MBIT 110NS 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (9x9)

패키지: 64-LBGA

재고6,036

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

-

60ns

110ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (9x9)

M24C04-WBN6P

STMicroelectronics

IC EEPROM 4KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고78,660

EEPROM

4Kb (512 x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

IS62C256AL-45ULI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 256KBIT 45NS 28SOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.330", 8.38mm Width)
Supplier Device Package: 28-SOP

패키지: 28-SOIC (0.330", 8.38mm Width)

재고13,872

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

28-SOIC (0.330", 8.38mm Width)

28-SOP

24LC256T-I/SN

Microchip Technology

IC EEPROM 256KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고233,496

EEPROM

256Kb (32K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

BR25H320FVT-2CE2

Rohm Semiconductor

IC EEPROM 32K SPI 10MHZ 8TSSOPB

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고29,496

EEPROM

32Kb (4K x 8)

SPI

10MHz

4ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP-B

S29GL128P90FAIR12

Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

패키지: 64-LBGA

재고2,240

FLASH

FLASH - NOR

128Mb (16M x 8)

Parallel

-

90ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

S25FL064LABBHB020

Cypress Semiconductor Corp

IC 64 MB FLASH MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

패키지: 24-TBGA

재고2,432

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI

108MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-BGA (8x6)

MTFC64GAOAMEA-WT ES TR

Micron Technology Inc.

MASSFLASH/CONTROLLER 512G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,552

-

AS4C512M8D3LB-12BCN

Alliance Memory, Inc.

IC DRAM 4G PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (10.5x9)

패키지: 78-VFBGA

재고4,880

DRAM

SDRAM - DDR3L

4Gb (512M x 8)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-VFBGA

78-FBGA (10.5x9)

M95256-DRMF3TG/K

STMicroelectronics

IC EEPROM 256KBIT 20MHZ 8UFDFPN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-MLP (2x3)

패키지: 8-WFDFN Exposed Pad

재고6,416

EEPROM

256Kb (32K x 8)

SPI

20MHz

4ms

-

1.8V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-MLP (2x3)

S99GL128P0173

Infineon Technologies

IC FLASH 128MBIT PARALLEL

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

FLASH

FLASH - NOR

128Mbit

Parallel

-

MTFC64GBCAQDQ-AAT-ES

Micron Technology Inc.

EMMC 512G LBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

70825S20PFGI8

Renesas Electronics Corporation

IC RAM

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 128Kbit
Memory Interface: Parallel
Clock Frequency: 40 MHz
Write Cycle Time - Word, Page: 20ns
Access Time: 20 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)

패키지: -

Request a Quote

SRAM

128Kbit

Parallel

40 MHz

20ns

20 ns

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

80-LQFP

80-TQFP (14x14)

27S29ADC

Rochester Electronics, LLC

4,096-BIT (512X8) BIPOLAR PROM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

QS7024A-35TF

Quality Semiconductor

MULTI-PORT SRAM, 4KX16, 35NS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

P06192-001-C

ProLabs

HP P06192-001 Compatible Factory

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-