페이지 2061 - 메모리 | 집적 회로(IC) | Heisener Electronics
고객 문의
SalesDept@heisener.com 86-755-83210559-841
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

메모리

기록 62,144
페이지  2,061/2,220
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
N25Q064A13ESF42G
Micron Technology Inc.

IC FLASH 64MBIT 108MHZ 16SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (16M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SO W
패키지: 16-SOIC (0.295", 7.50mm Width)
재고5,840
FLASH
FLASH - NOR
64Mb (16M x 4)
SPI
108MHz
8ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SO W
MT44K16M36RB-093 IT:A TR
Micron Technology Inc.

IC RLDRAM 576MBIT 1.067GHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: DRAM
  • Memory Size: 576Mb (16M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 1067MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 10ns
  • Voltage - Supply: 1.28 V ~ 1.42 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-TBGA
  • Supplier Device Package: 168-BGA
패키지: 168-TBGA
재고4,720
DRAM
DRAM
576Mb (16M x 36)
Parallel
1067MHz
-
10ns
1.28 V ~ 1.42 V
-40°C ~ 95°C (TC)
Surface Mount
168-TBGA
168-BGA
MT29C4G48MAZBAAKQ-5 WT TR
Micron Technology Inc.

IC FLASH/LPDRAM 6GBIT 168WFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 4Gb (256M x 16)(NAND), 2Gb (128M x 16)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 168-WFBGA
  • Supplier Device Package: 168-WFBGA (12x12)
패키지: 168-WFBGA
재고2,400
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
4Gb (256M x 16)(NAND), 2Gb (128M x 16)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-25°C ~ 85°C (TA)
Surface Mount
168-WFBGA
168-WFBGA (12x12)
AT34C02D-SSHM-B
Microchip Technology

IC EEPROM 2KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,968
EEPROM
EEPROM
2Kb (256 x 8)
I2C
1MHz
5ms
-
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
W25Q64BVZEIG
Winbond Electronics

IC FLASH 64MBIT 80MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 80MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
패키지: 8-WDFN Exposed Pad
재고5,328
FLASH
FLASH - NOR
64Mb (8M x 8)
SPI
80MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)
CAT28C512LI15
ON Semiconductor

IC EEPROM 512KBIT 150NS 32DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP (0.600", 15.24mm)
  • Supplier Device Package: 32-PDIP
패키지: 32-DIP (0.600", 15.24mm)
재고7,504
EEPROM
EEPROM
512Kb (64K x 8)
Parallel
-
5ms
150ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
32-DIP (0.600", 15.24mm)
32-PDIP
hot IDT71V416L10PH
IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: 44-TSOP (0.400", 10.16mm Width)
재고8,928
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IDT71T016SA20PHG
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 20NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: 44-TSOP (0.400", 10.16mm Width)
재고6,672
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
20ns
20ns
2.375 V ~ 2.625 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
hot W25P40VSNIG
Winbond Electronics

IC FLASH 4MBIT 40MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고16,584
FLASH
FLASH
4Mb (512K x 8)
SPI
40MHz
5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DS2227-100
Maxim Integrated

IC NVSRAM 4MBIT 100NS 72SIMM

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (128K x 32, 256K x 16, 512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Socket
  • Package / Case: 72-SIMM
  • Supplier Device Package: 72-SIMM
패키지: 72-SIMM
재고5,280
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (128K x 32, 256K x 16, 512K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Socket
72-SIMM
72-SIMM
R1LV3216RSA-7SI#B0
Renesas Electronics America

IC SRAM 32MBIT 70NS 48TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 32Mb (4M x 8, 2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TSOP
  • Supplier Device Package: 48-TSOP
패키지: 48-TSOP
재고6,928
SRAM
SRAM
32Mb (4M x 8, 2M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TSOP
48-TSOP
7006L35J
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 35NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
패키지: 68-LCC (J-Lead)
재고4,128
SRAM
SRAM - Dual Port, Asynchronous
128Kb (16K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
7025S15J8
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 15NS 84PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (8K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-LCC (J-Lead)
  • Supplier Device Package: 84-PLCC (29.21x29.21)
패키지: 84-LCC (J-Lead)
재고5,232
SRAM
SRAM - Dual Port, Asynchronous
128Kb (8K x 16)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
84-LCC (J-Lead)
84-PLCC (29.21x29.21)
IS42SM32160E-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: 90-TFBGA
재고3,824
DRAM
SDRAM - Mobile
512Mb (16M x 32)
Parallel
133MHz
-
6ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
71V424S10YGI8
IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 10NS 36SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 36-SOJ
패키지: 36-BSOJ (0.400", 10.16mm Width)
재고6,224
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
36-BSOJ (0.400", 10.16mm Width)
36-SOJ
AT25XV041B-UUV-T
Adesto Technologies

IC FLASH 4MBIT 85MHZ 8WLCSP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 85MHz
  • Write Cycle Time - Word, Page: 8µs, 2.75ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 4.4 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-XFBGA, WLCSP
  • Supplier Device Package: 8-WLCSP
패키지: 8-XFBGA, WLCSP
재고4,880
FLASH
FLASH
4Mb (512K x 8)
SPI
85MHz
8µs, 2.75ms
-
1.65 V ~ 4.4 V
-40°C ~ 85°C (TC)
Surface Mount
8-XFBGA, WLCSP
8-WLCSP
DS2502X1+U
Maxim Integrated

IC EPROM 1K 1WIRE 4WLP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: 1-Wire®
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.8 V ~ 6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 4-UFBGA, WLBGA
  • Supplier Device Package: 4-WLP (1.62x0.93)
패키지: 4-UFBGA, WLBGA
재고3,024
EPROM
EPROM - OTP
1Kb (128 x 8)
1-Wire®
-
-
-
2.8 V ~ 6 V
-40°C ~ 85°C (TA)
Surface Mount
4-UFBGA, WLBGA
4-WLP (1.62x0.93)
IS61VPS102418B-200TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 200MHZ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x20)
패키지: 100-LQFP
재고4,736
SRAM
SRAM - Synchronous
18Mb (1M x 18)
Parallel
200MHz
-
3ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-LQFP (14x20)
AT25020B-MAPD-T
Microchip Technology

5MHZ AUTO GRADE1 8-UDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 5MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (2x3)
패키지: 8-UFDFN Exposed Pad
재고2,016
EEPROM
EEPROM
2Kb (256 x 8)
SPI
5MHz
5ms
-
2.5V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-UDFN (2x3)
S25HL512TDPMHV013
Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
512Mbit
SPI - Quad I/O, QPI
133 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
S25FL512SAGMFMR10
Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
재고1,173
FLASH
FLASH - NOR
512Mbit
SPI - Quad I/O
133 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 125°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
CY62138FV30LL-45ZXA
Cypress Semiconductor Corp

SRAM - ASYNCHRONOUS MEMORY IC 2M

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 2Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45 ns
  • Voltage - Supply: 2.2V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 32-TSOP I
패키지: -
Request a Quote
SRAM
SRAM - Synchronous
2Mbit
Parallel
-
45ns
45 ns
2.2V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
32-TFSOP (0.724", 18.40mm Width)
32-TSOP I
7005S12J8
Renesas Electronics Corporation

IC RAM 8K X 8 DUAL PORT

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 64Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
패키지: -
Request a Quote
SRAM
SRAM - Dual Port, Asynchronous
64Kbit
Parallel
-
12ns
12 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
M3032316045NX0ITBY
Renesas Electronics Corporation

M3032316 MRAM PARALLEL 32MB X16

  • Memory Type: Non-Volatile
  • Memory Format: RAM
  • Technology: MRAM (Magnetoresistive RAM)
  • Memory Size: 32Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP
패키지: -
Request a Quote
RAM
MRAM (Magnetoresistive RAM)
32Mbit
Parallel
-
45ns
45 ns
2.7V ~ 3.6V
-40°C ~ 85°C
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP
CY62157CV30LL-70BAI
Cypress Semiconductor Corp

IC SRAM 8MBIT PARALLEL 48FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 8Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70 ns
  • Voltage - Supply: 2.7V ~ 3.3V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-FBGA (6x10)
패키지: -
Request a Quote
SRAM
SRAM - Asynchronous
8Mbit
Parallel
-
70ns
70 ns
2.7V ~ 3.3V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-FBGA (6x10)
BY25Q16BSUJG-R
BYTe Semiconductor

16 MBIT, 3.0V (2.7V TO 3.6V), -4

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 16Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 108 MHz
  • Write Cycle Time - Word, Page: 60µs, 4ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-USON (2x3)
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
16Mbit
SPI - Quad I/O, QPI
108 MHz
60µs, 4ms
7 ns
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-USON (2x3)
MX66U1G45GXDJ54
Macronix

MEMORY

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: 5.5 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA, CSPBGA
  • Supplier Device Package: 24-CSPBGA (6x8)
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
1Gbit
SPI - Quad I/O, QPI, DTR
133 MHz
4ms
5.5 ns
1.7V ~ 2V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA, CSPBGA
24-CSPBGA (6x8)
27S29DC
Rochester Electronics, LLC

4,096-BIT (512X8) BIPOLAR PROM

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-