페이지 2117 - 메모리 | 집적 회로(IC) | Heisener Electronics
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메모리

기록 62,144
페이지  2,117/2,220
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot CY7C1320CV18-167BZC
Cypress Semiconductor Corp

IC SRAM 18MBIT 167MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: 165-LBGA
재고16,932
SRAM
SRAM - Synchronous, DDR II
18Mb (512K x 36)
Parallel
167MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
hot AT24C02N-10SC-1.8
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고9,540
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
1.8 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
7008L15JG8
IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 15NS 84PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-LCC (J-Lead)
  • Supplier Device Package: 84-PLCC (29.21x29.21)
패키지: 84-LCC (J-Lead)
재고4,464
SRAM
SRAM - Dual Port, Asynchronous
512Kb (64K x 8)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
84-LCC (J-Lead)
84-PLCC (29.21x29.21)
W9864G2JB-6I TR
Winbond Electronics

IC SDRAM 64MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (2M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: 90-TFBGA
재고3,600
DRAM
SDRAM
64Mb (2M x 32)
Parallel
166MHz
-
5ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
AT45DB041E-UUN2B-T
Adesto Technologies

IC FLASH 4MBIT 85MHZ 8WLCSP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (256 Bytes x 2048 pages)
  • Memory Interface: SPI
  • Clock Frequency: 85MHz
  • Write Cycle Time - Word, Page: 8µs, 3ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFBGA, WLCSP
  • Supplier Device Package: 8-WLCSP
패키지: 8-UFBGA, WLCSP
재고3,824
FLASH
FLASH
4Mb (256 Bytes x 2048 pages)
SPI
85MHz
8µs, 3ms
-
1.65 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-UFBGA, WLCSP
8-WLCSP
hot LE25U40CQE-AH
ON Semiconductor

IC FLASH 4MBIT 40MHZ 8VSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-VSON (5x6)
패키지: 8-WDFN Exposed Pad
재고24,000
FLASH
FLASH
4Mb (512K x 8)
SPI
40MHz
5ms
-
2.3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-VSON (5x6)
24AA04-I/SNG
Microchip Technology

IC EEPROM 4KBIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 8 x 2)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,960
EEPROM
EEPROM
4Kb (256 x 8 x 2)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot 25LC040-I/P
Microchip Technology

IC EEPROM 4KBIT 2MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고7,452
EEPROM
EEPROM
4Kb (512 x 8)
SPI
2MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
BR24T32-W
Rohm Semiconductor

IC EEPROM 32KBIT 400KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.6 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP-T
패키지: 8-DIP (0.300", 7.62mm)
재고18,948
EEPROM
EEPROM
32Kb (4K x 8)
I2C
400kHz
5ms
-
1.6 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP-T
AS7C1024B-12JCN
Alliance Memory, Inc.

IC SRAM 1MBIT 12NS 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 32-SOJ
패키지: 32-BSOJ (0.400", 10.16mm Width)
재고6,588
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
12ns
12ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-BSOJ (0.400", 10.16mm Width)
32-SOJ
MT48LC64M8A2P-75IT:C
Alliance Memory, Inc.

IC SDRAM 512MBIT 133MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP
패키지: 54-TSOP (0.400", 10.16mm Width)
재고17,712
DRAM
SDRAM
512Mb (64M x 8)
Parallel
133MHz
15ns
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP
hot M48Z08-100PC1
STMicroelectronics

IC NVSRAM 64KBIT 100NS 28DIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.75 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 28-PCDIP, CAPHAT?
패키지: 28-DIP Module (0.600", 15.24mm)
재고5,856
NVSRAM
NVSRAM (Non-Volatile SRAM)
64Kb (8K x 8)
Parallel
-
100ns
100ns
4.75 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
28-DIP Module (0.600", 15.24mm)
28-PCDIP, CAPHAT?
MT53D256M64D4NY-046 XT:B
Micron Technology Inc.

IC DRAM 16G 2133MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 16Gb (256M x 64)
  • Memory Interface: -
  • Clock Frequency: 2133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 105°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,640
DRAM
SDRAM - Mobile LPDDR4
16Gb (256M x 64)
-
2133MHz
-
-
1.1V
-30°C ~ 105°C (TC)
-
-
-
25AA1024-I/WF16K
Microchip Technology

IC EEPROM 1M SPI 20MHZ WAFER

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고5,760
EEPROM
EEPROM
1Mb (128K x 8)
SPI
20MHz
6ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
Die
Die
MT51K128M32HF-60 N:B
Micron Technology Inc.

IC GDDR5 4G 128MX32 FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,520
-
-
-
-
-
-
-
-
-
-
-
-
hot MX25L51245GZ2I-10G
Macronix

IC FLASH SERIAL NOR 512M 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 60µs, 750µs
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
패키지: 8-WDFN Exposed Pad
재고22,092
FLASH
FLASH - NOR
512Mb (64M x 8)
SPI
166MHz
60µs, 750µs
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)
S29GL064S70FHI040
Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
패키지: 64-LBGA
재고3,312
FLASH
FLASH - NOR
64Mb (4M x 16)
Parallel
-
60ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
S25FL256LAGNFN011
Cypress Semiconductor Corp

IC NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x8)
패키지: 8-WDFN Exposed Pad
재고3,280
FLASH
FLASH - NOR
256Mb (32M x 8)
SPI - Quad I/O, QPI
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
AT25PE16-SHF-T
Adesto Technologies

8-SOIC-W IND TEMP 2.3V

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16M (4096 pages x 512 bytes)
  • Memory Interface: SPI
  • Clock Frequency: 85MHz
  • Write Cycle Time - Word, Page: 8µs, 4ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.209", 5.30mm Width)
재고5,184
FLASH
FLASH
16M (4096 pages x 512 bytes)
SPI
85MHz
8µs, 4ms
-
2.3 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
MT53D512M32D2DS-053 WT:D TR
Micron Technology Inc.

IC DRAM 16G 1866MHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 16Gb (512M x 32)
  • Memory Interface: -
  • Clock Frequency: 1866MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,328
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1866MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
IS62WVS1288GBLL-45NLI
ISSI, Integrated Silicon Solution Inc

1Mb, Serial SRAM, 2.7V-3.6V, 45M

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 1Mbit
  • Memory Interface: SPI - Quad I/O, SDI
  • Clock Frequency: 45 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 15 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
Request a Quote
SRAM
SRAM - Synchronous
1Mbit
SPI - Quad I/O, SDI
45 MHz
-
15 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
S29GL064N11TFVR43
Infineon Technologies

IC FLASH 64MBIT PARALLEL 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 110ns
  • Access Time: 110 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
패키지: -
Request a Quote
FLASH
FLASH - NOR
64Mbit
Parallel
-
110ns
110 ns
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
W25Q256JWPIQ
Winbond Electronics

IC FLASH 256MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
패키지: -
Request a Quote
FLASH
FLASH - NOR
256Mbit
SPI - Quad I/O
133 MHz
5ms
6 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
S99JL064J0020
Infineon Technologies

IC GATE NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MT29F512G08EBLCEJ4-R-C
Micron Technology Inc.

IC FLASH 512GBIT PAR 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 512Gbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.6V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 132-VBGA
  • Supplier Device Package: 132-VBGA (12x18)
패키지: -
Request a Quote
FLASH
FLASH - NAND (TLC)
512Gbit
Parallel
-
-
-
2.6V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
132-VBGA
132-VBGA (12x18)
GD55B01GEFIRR
GigaDevice Semiconductor (HK) Limited

1GBIT, 3.3V, SOP16 300MIL, INDUS

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOP
패키지: -
재고2,727
FLASH
FLASH - NOR (SLC)
1Gbit
SPI - Quad I/O, QPI, DTR
133 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOP
W25Q20EWNB01
Winbond Electronics

IC FLASH 2MBIT SPI/QUAD 104MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 30µs, 800µs
  • Access Time: 6 ns
  • Voltage - Supply: 1.65V ~ 1.95V
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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FLASH
FLASH - NOR
2Mbit
SPI - Quad I/O
104 MHz
30µs, 800µs
6 ns
1.65V ~ 1.95V
-
-
-
-
W631GG8MB09J-TR
Winbond Electronics

IC DRAM 1GBIT SSTL 15 78VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gbit
  • Memory Interface: SSTL_15
  • Clock Frequency: 1.066 GHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.425V ~ 1.575V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-VFBGA (8x10.5)
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DRAM
SDRAM - DDR3
1Gbit
SSTL_15
1.066 GHz
15ns
20 ns
1.425V ~ 1.575V
-40°C ~ 105°C (TC)
Surface Mount
78-VFBGA
78-VFBGA (8x10.5)