페이지 2151 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
PC28F256G18FE	Micron Technology Inc.	IC FLASH 256MBIT 96NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 96ns Access Time: 96ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (8x10)	패키지: 64-TBGA	재고5,904	FLASH	FLASH - NOR	256Mb (16M x 16)	Parallel	133MHz	96ns	96ns	1.7 V ~ 2 V	-30°C ~ 85°C (TC)	Surface Mount	64-TBGA	64-EasyBGA (8x10)
MT47H512M4EB-25E:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 400MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (512M x 4) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (9x11.5)	패키지: 60-TFBGA	재고4,336	DRAM	SDRAM - DDR2	2Gb (512M x 4)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-FBGA (9x11.5)
AT24C01C-PUM	Microchip Technology	IC EEPROM 1KBIT 1MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고4,016	EEPROM	EEPROM	1Kb (128 x 8)	I2C	1MHz	5ms	550ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IDT71V67602S133PF8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고2,608	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IDT71016S15Y8	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 15NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	패키지: 44-BSOJ (0.400", 10.16mm Width)	재고6,864	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
CY7C0831V-167AXC	Cypress Semiconductor Corp	IC SRAM 2MBIT 167MHZ 120TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 2Mb (128K x 18) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 120-LQFP Supplier Device Package: 120-TQFP (14x14)	패키지: 120-LQFP	재고2,720	SRAM	SRAM - Dual Port, Synchronous	2Mb (128K x 18)	Parallel	167MHz	-	-	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	120-LQFP	120-TQFP (14x14)
W19B320ATB7H	Winbond Electronics	IC FLASH 32MBIT 70NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: 48-TFBGA	재고3,296	FLASH	FLASH	32Mb (4M x 8, 2M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-20°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
AT24C32A-10PI-2.7	Microchip Technology	IC EEPROM 32KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고3,232	EEPROM	EEPROM	32Kb (4K x 8)	I2C	400kHz	5ms	900ns	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
AT49F001NT-90PC	Microchip Technology	IC FLASH 1MBIT 90NS 32DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-DIP	패키지: 32-DIP (0.600", 15.24mm)	재고3,888	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	50µs	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Through Hole	32-DIP (0.600", 15.24mm)	32-DIP
AT24C256N-10SC-2.7	Microchip Technology	IC EEPROM 256KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 10ms Access Time: 550ns Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,760	EEPROM	EEPROM	256Kb (32K x 8)	I2C	1MHz	10ms	550ns	2.7 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT49BV4096A-12RC	Microchip Technology	IC FLASH 4MBIT 120NS 44SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8, 256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 30µs Access Time: 120ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 44-SOIC (0.525", 13.34mm Width) Supplier Device Package: 44-SOIC	패키지: 44-SOIC (0.525", 13.34mm Width)	재고5,056	FLASH	FLASH	4Mb (512K x 8, 256K x 16)	Parallel	-	30µs	120ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TC)	Surface Mount	44-SOIC (0.525", 13.34mm Width)	44-SOIC
IS62WV20488EBLL-55BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 16MBIT 55NS 48BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (2M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: 48-TFBGA	재고7,792	SRAM	SRAM - Asynchronous	16Mb (2M x 8)	Parallel	-	55ns	55ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
71V2556S166PFGI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 166MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고2,160	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	166MHz	-	3.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
S25FL256SAGMFVR00	Cypress Semiconductor Corp	IC FLASH 256MBIT 133MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고3,376	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IS42SM16400M-6BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 64MBIT 166MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고7,680	DRAM	SDRAM - Mobile	64Mb (4M x 16)	Parallel	166MHz	-	5.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
24LC64T-E/SN	Microchip Technology	IC EEPROM 64KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고20,904	EEPROM	EEPROM	64Kb (8K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
24C02CT-E/MNY	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 100kHz Write Cycle Time - Word, Page: 1.5ms Access Time: 3500ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	패키지: 8-WFDFN Exposed Pad	재고5,168	EEPROM	EEPROM	2Kb (256 x 8)	I2C	100kHz	1.5ms	3500ns	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
24LC04BT-I/SN	Microchip Technology	IC EEPROM 4KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (256 x 8 x 2) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고684,372	EEPROM	EEPROM	4Kb (256 x 8 x 2)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT41K512M8DA-125:P	Micron Technology Inc.	IC DRAM 4G PARALLEL 800MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 13.5ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,352	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	Parallel	800MHz	-	13.5ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT47H64M8SH-25E AAT:H	Micron Technology Inc.	IC DRAM 512M PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (10x18)	패키지: 60-TFBGA	재고5,232	DRAM	SDRAM - DDR2	512Mb (64M x 8)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 105°C (TA)	Surface Mount	60-TFBGA	60-FBGA (10x18)
MT41K1G8RKB-107:N	Micron Technology Inc.	IC DRAM 8G PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	패키지: 78-TFBGA	재고2,544	DRAM	SDRAM - DDR3L	8Gb (1G x 8)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
SST25PF040CT-40E/MF	Microchip Technology	2.3V TO 3.6V 4MBIT SPI FLASH 125 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 40MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WDFN (5x6)	패키지: 8-WDFN Exposed Pad	재고19,044	FLASH	FLASH	4Mb (512K x 8)	SPI	40MHz	5ms	-	2.3V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WDFN (5x6)
W9864G6KT-6-TR	Winbond Electronics	IC DRAM 64MBIT LVTTL 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: -	Request a Quote	DRAM	SDRAM	64Mbit	LVTTL	166 MHz	-	5 ns	3V ~ 3.6V	0°C ~ 70°C (TC)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
S25HL01GTDPMHA010	Infineon Technologies	IC FLASH 1GBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: -	재고6,546	FLASH	FLASH - NOR	1Gbit	SPI - Quad I/O, QPI	133 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
GD5F4GQ4UCYIGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 4GBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gbit Memory Interface: SPI - Quad I/O Clock Frequency: 120 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	패키지: -	Request a Quote	FLASH	FLASH - NAND	4Gbit	SPI - Quad I/O	120 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
CY7C195-15VC	Cypress Semiconductor Corp	IC SRAM 256KBIT PARALLEL 24SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 24-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 24-SOJ	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	256Kbit	Parallel	-	15ns	15 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	24-BSOJ (0.300", 7.62mm Width)	24-SOJ
IS25WP064A-JMLE-TY	Vishay Sfernice	IC FLASH 64MBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 40µs, 800µs Access Time: 7 ns Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: -	Request a Quote	FLASH	FLASH - NOR	64Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	40µs, 800µs	7 ns	1.65V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
IME5116SDBETG-75I	Intelligent Memory Ltd.	ECC SDRAM, 512MB, 3.3V, 32MX16, Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mbit Memory Interface: LVTTL Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: -	Request a Quote	DRAM	SDRAM	512Mbit	LVTTL	133 MHz	15ns	5.4 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II

PC28F256G18FE

Micron Technology Inc.

IC FLASH 256MBIT 96NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 96ns
Access Time: 96ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (8x10)

패키지: 64-TBGA

재고5,904

FLASH

FLASH - NOR

256Mb (16M x 16)

Parallel

133MHz

96ns

1.7 V ~ 2 V

-30°C ~ 85°C (TC)

Surface Mount

64-TBGA

64-EasyBGA (8x10)

MT47H512M4EB-25E:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 400MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (512M x 4)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (9x11.5)

패키지: 60-TFBGA

재고4,336

DRAM

SDRAM - DDR2

2Gb (512M x 4)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-FBGA (9x11.5)

AT24C01C-PUM

Microchip Technology

IC EEPROM 1KBIT 1MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고4,016

EEPROM

1Kb (128 x 8)

I2C

1MHz

5ms

550ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

IDT71V67602S133PF8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고2,608

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IDT71016S15Y8

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 15NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

패키지: 44-BSOJ (0.400", 10.16mm Width)

재고6,864

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

15ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

CY7C0831V-167AXC

Cypress Semiconductor Corp

IC SRAM 2MBIT 167MHZ 120TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 2Mb (128K x 18)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Supplier Device Package: 120-TQFP (14x14)

패키지: 120-LQFP

재고2,720

SRAM

SRAM - Dual Port, Synchronous

2Mb (128K x 18)

Parallel

167MHz

-

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

120-LQFP

120-TQFP (14x14)

W19B320ATB7H

Winbond Electronics

IC FLASH 32MBIT 70NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: 48-TFBGA

재고3,296

FLASH

32Mb (4M x 8, 2M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-20°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

AT24C32A-10PI-2.7

Microchip Technology

IC EEPROM 32KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고3,232

EEPROM

32Kb (4K x 8)

I2C

400kHz

5ms

900ns

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

AT49F001NT-90PC

Microchip Technology

IC FLASH 1MBIT 90NS 32DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP

패키지: 32-DIP (0.600", 15.24mm)

재고3,888

FLASH

1Mb (128K x 8)

Parallel

-

50µs

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Through Hole

32-DIP (0.600", 15.24mm)

32-DIP

AT24C256N-10SC-2.7

Microchip Technology

IC EEPROM 256KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 10ms
Access Time: 550ns
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,760

EEPROM

256Kb (32K x 8)

I2C

1MHz

10ms

550ns

2.7 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT49BV4096A-12RC

Microchip Technology

IC FLASH 4MBIT 120NS 44SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8, 256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 30µs
Access Time: 120ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 44-SOIC (0.525", 13.34mm Width)
Supplier Device Package: 44-SOIC

패키지: 44-SOIC (0.525", 13.34mm Width)

재고5,056

FLASH

4Mb (512K x 8, 256K x 16)

Parallel

-

30µs

120ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TC)

Surface Mount

44-SOIC (0.525", 13.34mm Width)

44-SOIC

IS62WV20488EBLL-55BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 16MBIT 55NS 48BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (2M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: 48-TFBGA

재고7,792

SRAM

SRAM - Asynchronous

16Mb (2M x 8)

Parallel

-

55ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

71V2556S166PFGI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고2,160

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

166MHz

-

3.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

S25FL256SAGMFVR00

Cypress Semiconductor Corp

IC FLASH 256MBIT 133MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고3,376

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

IS42SM16400M-6BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고7,680

DRAM

SDRAM - Mobile

64Mb (4M x 16)

Parallel

166MHz

-

5.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

24LC64T-E/SN

Microchip Technology

IC EEPROM 64KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고20,904

EEPROM

64Kb (8K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

24C02CT-E/MNY

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: 3500ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

패키지: 8-WFDFN Exposed Pad

재고5,168

EEPROM

2Kb (256 x 8)

I2C

100kHz

1.5ms

3500ns

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

24LC04BT-I/SN

Microchip Technology

IC EEPROM 4KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (256 x 8 x 2)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고684,372

EEPROM

4Kb (256 x 8 x 2)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT41K512M8DA-125:P

Micron Technology Inc.

IC DRAM 4G PARALLEL 800MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 13.5ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,352

DRAM

SDRAM - DDR3L

4Gb (512M x 8)

Parallel

800MHz

-

13.5ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

-

MT47H64M8SH-25E AAT:H

Micron Technology Inc.

IC DRAM 512M PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (10x18)

패키지: 60-TFBGA

재고5,232

DRAM

SDRAM - DDR2

512Mb (64M x 8)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 105°C (TA)

Surface Mount

60-TFBGA

60-FBGA (10x18)

MT41K1G8RKB-107:N

Micron Technology Inc.

IC DRAM 8G PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

패키지: 78-TFBGA

재고2,544

DRAM

SDRAM - DDR3L

8Gb (1G x 8)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

SST25PF040CT-40E/MF

Microchip Technology

2.3V TO 3.6V 4MBIT SPI FLASH 125

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WDFN (5x6)

패키지: 8-WDFN Exposed Pad

재고19,044

FLASH

4Mb (512K x 8)

SPI

40MHz

5ms

-

2.3V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WDFN (5x6)

W9864G6KT-6-TR

Winbond Electronics

IC DRAM 64MBIT LVTTL 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: -

Request a Quote

DRAM

SDRAM

64Mbit

LVTTL

166 MHz

-

5 ns

3V ~ 3.6V

0°C ~ 70°C (TC)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

S25HL01GTDPMHA010

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: -

재고6,546

FLASH

FLASH - NOR

1Gbit

SPI - Quad I/O, QPI

133 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

GD5F4GQ4UCYIGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 4GBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 120 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

패키지: -

Request a Quote

FLASH

FLASH - NAND

4Gbit

SPI - Quad I/O

120 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)

CY7C195-15VC

Cypress Semiconductor Corp

IC SRAM 256KBIT PARALLEL 24SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 24-SOJ

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

256Kbit

Parallel

-

15ns

15 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

24-BSOJ (0.300", 7.62mm Width)

24-SOJ

IS25WP064A-JMLE-TY

Vishay Sfernice

IC FLASH 64MBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 40µs, 800µs
Access Time: 7 ns
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: -

Request a Quote

FLASH

FLASH - NOR

64Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

40µs, 800µs

7 ns

1.65V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

IME5116SDBETG-75I

Intelligent Memory Ltd.

ECC SDRAM, 512MB, 3.3V, 32MX16,

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mbit
Memory Interface: LVTTL
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: -

Request a Quote

DRAM

SDRAM

512Mbit

LVTTL

133 MHz

15ns

5.4 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II