페이지 2164 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS42S16100F-7TLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 16MBIT 143MHZ 50TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 50-TSOP (0.400", 10.16mm Width) Supplier Device Package: 50-TSOP II	패키지: 50-TSOP (0.400", 10.16mm Width)	재고65,256	DRAM	SDRAM	16Mb (1M x 16)	Parallel	143MHz	-	5.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
M58LT256KST7ZA6E	Micron Technology Inc.	IC FLASH 256MBIT 70NS 64TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-TBGA (10x13)	패키지: 64-TBGA	재고2,448	FLASH	FLASH - NOR	256Mb (16M x 16)	Parallel	52MHz	70ns	70ns	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	64-TBGA	64-TBGA (10x13)
IDT71V432S6PF8	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 6NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 1Mb (32K x 32) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 3.135 V ~ 3.63 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고6,976	SRAM	SRAM - Synchronous	1Mb (32K x 32)	Parallel	-	-	6ns	3.135 V ~ 3.63 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
STK22C48-NF45	Cypress Semiconductor Corp	IC NVSRAM 16KBIT 45NS 28SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	패키지: 28-SOIC (0.295", 7.50mm Width)	재고6,944	NVSRAM	NVSRAM (Non-Volatile SRAM)	16Kb (2K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
CYD36S72V18-167BGXC	Cypress Semiconductor Corp	IC SRAM 36MBIT 167MHZ 484FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 36Mb (512K x 72) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 4ns Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 484-FBGA Supplier Device Package: 484-FBGA (23x23)	패키지: 484-FBGA	재고3,072	SRAM	SRAM - Dual Port, Synchronous	36Mb (512K x 72)	Parallel	167MHz	-	4ns	1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	484-FBGA	484-FBGA (23x23)
M29W640GH70NB6E	Micron Technology Inc.	IC FLASH 64MBIT 70NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	패키지: 56-TFSOP (0.724", 18.40mm Width)	재고6,000	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
AT49BV160-70CI	Microchip Technology	IC FLASH 16MBIT 70NS 45CBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (2M x 8, 1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 200µs Access Time: 70ns Voltage - Supply: 2.65 V ~ 3.3 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 45-TFBGA, CSBGA Supplier Device Package: 45-CBGA (6.5x7.5)	패키지: 45-TFBGA, CSBGA	재고4,128	FLASH	FLASH	16Mb (2M x 8, 1M x 16)	Parallel	-	200µs	70ns	2.65 V ~ 3.3 V	-40°C ~ 85°C (TC)	Surface Mount	45-TFBGA, CSBGA	45-CBGA (6.5x7.5)
AT49F002T-12JC	Microchip Technology	IC FLASH 2MBIT 120NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고42,720	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	120ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
70V38L15PFG	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 15NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 1.125Mb (64K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고5,168	SRAM	SRAM - Dual Port, Asynchronous	1.125Mb (64K x 18)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
7133SA55JI8	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 55NS 68PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (2K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 68-LCC (J-Lead) Supplier Device Package: 68-PLCC (24.21x24.21)	패키지: 68-LCC (J-Lead)	재고6,192	SRAM	SRAM - Dual Port, Asynchronous	32Kb (2K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	68-LCC (J-Lead)	68-PLCC (24.21x24.21)
IS42VM16320E-75BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 133MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고5,584	DRAM	SDRAM - Mobile	512Mb (32M x 16)	Parallel	133MHz	-	6ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
71V3579S80PFG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 8NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고4,400	SRAM	SRAM - Synchronous	4.5Mb (256K x 18)	Parallel	100MHz	-	8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MT25QL128ABA1EW9-0SIT	Micron Technology Inc.	IC FLASH 128MBIT 133MHZ 8WPDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WPDFN (6x8) (MLP8)	패키지: 8-WDFN Exposed Pad	재고5,200	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	133MHz	8ms, 2.8ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WPDFN (6x8) (MLP8)
N25Q064A11ESE40F TR	Micron Technology Inc.	IC FLASH 64MBIT 108MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (16M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SO W	패키지: 8-SOIC (0.209", 5.30mm Width)	재고6,960	FLASH	FLASH - NOR	64Mb (16M x 4)	SPI	108MHz	8ms, 5ms	-	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SO W
24LC64F-I/P	Microchip Technology	IC EEPROM 64KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고2,304	EEPROM	EEPROM	64Kb (8K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IS43TR85120A-125KBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 4GBIT 800MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (9x10.5)	패키지: 78-TFBGA	재고7,236	DRAM	SDRAM - DDR3	4Gb (512M x 8)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (9x10.5)
AT24C512C-CUM-T-923	Microchip Technology	IC EEPROM 512K I2C 8VFBGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFBGA Supplier Device Package: 8-VFBGA (2.35x3.73)	패키지: 8-VFBGA	재고4,400	EEPROM	EEPROM	512Kb (64K x 8)	I²C	400kHz	5ms	900ns	1.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-VFBGA	8-VFBGA (2.35x3.73)
W632GG6MB-15	Winbond Electronics	IC DRAM 2G PARALLEL 667MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-VFBGA (13x7.5)	패키지: 96-VFBGA	재고3,216	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	667MHz	-	20ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-VFBGA (13x7.5)
S29GL064N90FFA023	Cypress Semiconductor Corp	IC FLASH 64M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	패키지: 64-LBGA	재고24,120	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
MT41K256M16TW-107 AT:P	Micron Technology Inc.	MEMORY DRAM Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	패키지: 96-TFBGA	재고2,592	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
MT53D4D1ARQ-DC TR	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR4 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,288	-	-	-	-	-	-	-	-	-	-	-	-
CG8317AA	Cypress Semiconductor Corp	IC SRAM MICROPOWER 32SOIC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,424	-	-	-	-	-	-	-	-	-	-	-	-
R1LV5256ESP-5SR#S0	Renesas Electronics America	IC SRAM 256KBIT 55NS 28SOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.342", 8.69mm Width) Supplier Device Package: 28-SOP	패키지: 28-SOIC (0.342", 8.69mm Width)	재고3,520	SRAM	SRAM	256Kb (32K x 8)	Parallel	-	55ns	55ns	2.7V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	28-SOIC (0.342", 8.69mm Width)	28-SOP
MT29F4G08ABAFAWP-IT:F TR	Micron Technology Inc.	IC FLASH 4G PARALLEL 48TSOP1 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고6,432	FLASH	FLASH - NAND (SLC)	4Gb (512M x 8)	Parallel	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
W9816G6JH-7-TR	Winbond Electronics	IC DRAM 16MBIT LVTTL 50TSOP II Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mbit Memory Interface: LVTTL Clock Frequency: 143 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 50-TSOP (0.400", 10.16mm Width) Supplier Device Package: 50-TSOP II	패키지: -	Request a Quote	DRAM	SDRAM	16Mbit	LVTTL	143 MHz	-	5 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	50-TSOP (0.400", 10.16mm Width)	50-TSOP II
W25Q32JWUUIMTR	Winbond Electronics	IC FLASH 32MBIT SPI/QUAD 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 5ms Access Time: 6 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-USON (4x3)	패키지: -	Request a Quote	FLASH	FLASH - NOR	32Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	5ms	6 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-USON (4x3)
AS6C4016B-45ZIN	Alliance Memory, Inc.	IC SRAM 4MBIT PARALLEL 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 80°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: -	재고405	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	45ns	45 ns	2.7V ~ 3.6V	-40°C ~ 80°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
W29N01HZSINA	Winbond Electronics	IC FLASH 1GBIT PARALLEL 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	1Gbit	Parallel	-	25ns	25 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP

IS42S16100F-7TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 143MHZ 50TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 50-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 50-TSOP II

패키지: 50-TSOP (0.400", 10.16mm Width)

재고65,256

DRAM

SDRAM

16Mb (1M x 16)

Parallel

143MHz

-

5.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

50-TSOP (0.400", 10.16mm Width)

50-TSOP II

M58LT256KST7ZA6E

Micron Technology Inc.

IC FLASH 256MBIT 70NS 64TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-TBGA (10x13)

패키지: 64-TBGA

재고2,448

FLASH

FLASH - NOR

256Mb (16M x 16)

Parallel

52MHz

70ns

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

64-TBGA

64-TBGA (10x13)

IDT71V432S6PF8

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 6NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 1Mb (32K x 32)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 3.135 V ~ 3.63 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고6,976

SRAM

SRAM - Synchronous

1Mb (32K x 32)

Parallel

-

6ns

3.135 V ~ 3.63 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

STK22C48-NF45

Cypress Semiconductor Corp

IC NVSRAM 16KBIT 45NS 28SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

패키지: 28-SOIC (0.295", 7.50mm Width)

재고6,944

NVSRAM

NVSRAM (Non-Volatile SRAM)

16Kb (2K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

CYD36S72V18-167BGXC

Cypress Semiconductor Corp

IC SRAM 36MBIT 167MHZ 484FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 36Mb (512K x 72)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 4ns
Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 484-FBGA
Supplier Device Package: 484-FBGA (23x23)

패키지: 484-FBGA

재고3,072

SRAM

SRAM - Dual Port, Synchronous

36Mb (512K x 72)

Parallel

167MHz

-

4ns

1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

484-FBGA

484-FBGA (23x23)

M29W640GH70NB6E

Micron Technology Inc.

IC FLASH 64MBIT 70NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

패키지: 56-TFSOP (0.724", 18.40mm Width)

재고6,000

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

AT49BV160-70CI

Microchip Technology

IC FLASH 16MBIT 70NS 45CBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8, 1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 200µs
Access Time: 70ns
Voltage - Supply: 2.65 V ~ 3.3 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 45-TFBGA, CSBGA
Supplier Device Package: 45-CBGA (6.5x7.5)

패키지: 45-TFBGA, CSBGA

재고4,128

FLASH

16Mb (2M x 8, 1M x 16)

Parallel

-

200µs

70ns

2.65 V ~ 3.3 V

-40°C ~ 85°C (TC)

Surface Mount

45-TFBGA, CSBGA

45-CBGA (6.5x7.5)

AT49F002T-12JC

Microchip Technology

IC FLASH 2MBIT 120NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고42,720

FLASH

2Mb (256K x 8)

Parallel

-

50µs

120ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

70V38L15PFG

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 15NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 1.125Mb (64K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고5,168

SRAM

SRAM - Dual Port, Asynchronous

1.125Mb (64K x 18)

Parallel

-

15ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

7133SA55JI8

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 55NS 68PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (2K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)

패키지: 68-LCC (J-Lead)

재고6,192

SRAM

SRAM - Dual Port, Asynchronous

32Kb (2K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

68-LCC (J-Lead)

68-PLCC (24.21x24.21)

IS42VM16320E-75BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고5,584

DRAM

SDRAM - Mobile

512Mb (32M x 16)

Parallel

133MHz

-

6ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

71V3579S80PFG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고4,400

SRAM

SRAM - Synchronous

4.5Mb (256K x 18)

Parallel

100MHz

-

8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MT25QL128ABA1EW9-0SIT

Micron Technology Inc.

IC FLASH 128MBIT 133MHZ 8WPDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WPDFN (6x8) (MLP8)

패키지: 8-WDFN Exposed Pad

재고5,200

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

133MHz

8ms, 2.8ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WPDFN (6x8) (MLP8)

N25Q064A11ESE40F TR

Micron Technology Inc.

IC FLASH 64MBIT 108MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (16M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO W

패키지: 8-SOIC (0.209", 5.30mm Width)

재고6,960

FLASH

FLASH - NOR

64Mb (16M x 4)

SPI

108MHz

8ms, 5ms

-

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SO W

24LC64F-I/P

Microchip Technology

IC EEPROM 64KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고2,304

EEPROM

64Kb (8K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

IS43TR85120A-125KBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 800MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (9x10.5)

패키지: 78-TFBGA

재고7,236

DRAM

SDRAM - DDR3

4Gb (512M x 8)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (9x10.5)

AT24C512C-CUM-T-923

Microchip Technology

IC EEPROM 512K I2C 8VFBGA

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFBGA
Supplier Device Package: 8-VFBGA (2.35x3.73)

패키지: 8-VFBGA

재고4,400

EEPROM

512Kb (64K x 8)

I²C

400kHz

5ms

900ns

1.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-VFBGA

8-VFBGA (2.35x3.73)

W632GG6MB-15

Winbond Electronics

IC DRAM 2G PARALLEL 667MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-VFBGA (13x7.5)

패키지: 96-VFBGA

재고3,216

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

667MHz

-

20ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-VFBGA (13x7.5)

S29GL064N90FFA023

Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

패키지: 64-LBGA

재고24,120

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

MT41K256M16TW-107 AT:P

Micron Technology Inc.

MEMORY DRAM

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

패키지: 96-TFBGA

재고2,592

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

MT53D4D1ARQ-DC TR

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,288

-

CG8317AA

Cypress Semiconductor Corp

IC SRAM MICROPOWER 32SOIC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,424

-

R1LV5256ESP-5SR#S0

Renesas Electronics America

IC SRAM 256KBIT 55NS 28SOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Supplier Device Package: 28-SOP

패키지: 28-SOIC (0.342", 8.69mm Width)

재고3,520

SRAM

256Kb (32K x 8)

Parallel

-

55ns

2.7V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

28-SOIC (0.342", 8.69mm Width)

28-SOP

MT29F4G08ABAFAWP-IT:F TR

Micron Technology Inc.

IC FLASH 4G PARALLEL 48TSOP1

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고6,432

FLASH

FLASH - NAND (SLC)

4Gb (512M x 8)

Parallel

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

W9816G6JH-7-TR

Winbond Electronics

IC DRAM 16MBIT LVTTL 50TSOP II

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mbit
Memory Interface: LVTTL
Clock Frequency: 143 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 50-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 50-TSOP II

패키지: -

Request a Quote

DRAM

SDRAM

16Mbit

LVTTL

143 MHz

-

5 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

50-TSOP (0.400", 10.16mm Width)

50-TSOP II

W25Q32JWUUIMTR

Winbond Electronics

IC FLASH 32MBIT SPI/QUAD 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 6 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-USON (4x3)

패키지: -

Request a Quote

FLASH

FLASH - NOR

32Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

5ms

6 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-USON (4x3)

AS6C4016B-45ZIN

Alliance Memory, Inc.

IC SRAM 4MBIT PARALLEL 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 80°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: -

재고405

SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

45ns

45 ns

2.7V ~ 3.6V

-40°C ~ 80°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

W29N01HZSINA

Winbond Electronics

IC FLASH 1GBIT PARALLEL 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

1Gbit

Parallel

-

25ns

25 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP