페이지 247 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT42L64M32D1TK-18 AAT:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 533MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,056	DRAM	SDRAM - Mobile LPDDR2	2Gb (64M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.3 V	-40°C ~ 105°C (TC)	-	-	-
MTFC32GJTED-IT	Micron Technology Inc.	IC FLASH 256GBIT 169VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 169-VFBGA Supplier Device Package: 169-VFBGA (14x18)	패키지: 169-VFBGA	재고4,096	FLASH	FLASH - NAND	256Gb (32G x 8)	MMC	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	169-VFBGA	169-VFBGA (14x18)
IDT70P3307S233RM	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 233MHZ 576FCBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous QDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 233MHz Write Cycle Time - Word, Page: - Access Time: 7.2ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 576-BBGA, FCBGA Supplier Device Package: 576-FCBGA (25x25)	패키지: 576-BBGA, FCBGA	재고4,560	SRAM	SRAM - Dual Port, Synchronous QDR II	18Mb (1M x 18)	Parallel	233MHz	-	7.2ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	576-BBGA, FCBGA	576-FCBGA (25x25)
CY62138FV30LL-45ZSXIT	Cypress Semiconductor Corp	IC SRAM 2MBIT 45NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고7,680	SRAM	SRAM - Asynchronous	2Mb (256K x 8)	Parallel	-	45ns	45ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
CYD09S72V18-200BBXC	Cypress Semiconductor Corp	IC SRAM 9MBIT 200MHZ 256FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 9Mb (128K x 72) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.3ns Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-FBGA (17x17)	패키지: 256-LBGA	재고4,656	SRAM	SRAM - Dual Port, Synchronous	9Mb (128K x 72)	Parallel	200MHz	-	3.3ns	1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-FBGA (17x17)
AT49BV002AN-70VI	Microchip Technology	IC FLASH 2MBIT 70NS 32VSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-VSOP	패키지: 32-TFSOP (0.488", 12.40mm Width)	재고7,952	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-VSOP
DS1249W-150	Maxim Integrated	IC NVSRAM 2MBIT 150NS 32EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP Module (0.600", 15.24mm) Supplier Device Package: 32-EDIP	패키지: 32-DIP Module (0.600", 15.24mm)	재고2,432	NVSRAM	NVSRAM (Non-Volatile SRAM)	2Mb (256K x 8)	Parallel	-	150ns	150ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Through Hole	32-DIP Module (0.600", 15.24mm)	32-EDIP
AT24C164-10PC	Microchip Technology	IC EEPROM 16KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고43,464	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	10ms	900ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
AT24C64-10PI	Microchip Technology	IC EEPROM 64KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고3,344	EEPROM	EEPROM	64Kb (8K x 8)	I2C	400kHz	10ms	900ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
MTFC16GJDDQ-4M IT	Micron Technology Inc.	IC FLASH 128GBIT 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-LBGA (14x18)	패키지: 100-LBGA	재고7,696	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	-	-	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LBGA	100-LBGA (14x18)
AS7C34098A-15JIN	Alliance Memory, Inc.	IC SRAM 4MBIT 15NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	패키지: 44-BSOJ (0.400", 10.16mm Width)	재고9,876	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
CY14ME064J2-SXQT	Cypress Semiconductor Corp	IC NVSRAM 64KBIT 3.4MHZ 8SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 3.4MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,808	NVSRAM	NVSRAM (Non-Volatile SRAM)	64Kb (8K x 8)	I2C	3.4MHz	-	-	4.5 V ~ 5.5 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS39LV512-70JCE	ISSI, Integrated Silicon Solution Inc	IC FLASH 512KBIT 70NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC (11.43x13.97)	패키지: 32-LCC (J-Lead)	재고7,568	FLASH	FLASH - NOR	512Kb (64K x 8)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	32-LCC (J-Lead)	32-PLCC (11.43x13.97)
93LC46-I/P	Microchip Technology	IC EEPROM 1KBIT 1MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8, 64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고4,192	EEPROM	EEPROM	1Kb (128 x 8, 64 x 16)	SPI	2MHz	10ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
24LC025-I/P	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고2,448	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
25LC128T-I/SN	Microchip Technology	IC EEPROM 128KBIT 10MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,024	EEPROM	EEPROM	128Kb (16K x 8)	SPI	10MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT40A1G8PM-083E:A	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고8,364	DRAM	SDRAM - DDR4	8Gb (1G x 8)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
S29GL256S10FAIV13	Cypress Semiconductor Corp	IC FLASH 256M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 100ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	패키지: 64-LBGA	재고4,608	FLASH	FLASH - NOR	256Mb (16M x 16)	Parallel	-	60ns	100ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
MX25L12845GXCI-08G	Macronix	IC FLASH 128MBIT Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 120MHz Write Cycle Time - Word, Page: 30µs, 750µs Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA, CSPBGA Supplier Device Package: 24-CSPBGA (6x8)	패키지: 24-TBGA, CSPBGA	재고6,128	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	120MHz	30µs, 750µs	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA, CSPBGA	24-CSPBGA (6x8)
NV25640DWHFT3G	ON Semiconductor	64KB SPI SER CMOS EEPROM Memory Type: Non-Volatile Memory Format: EEPROM Technology: - Memory Size: 64K (8K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 4ms Access Time: 40ns Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,248	EEPROM	-	64K (8K x 8)	SPI	10MHz	4ms	40ns	2.5V ~ 5.5V	-40°C ~ 150°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
W25M02GWZEIG-TR	Winbond Electronics	IC FLASH 2GBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 700µs Access Time: 8 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	2Gbit	SPI - Quad I/O	104 MHz	700µs	8 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
CY7C09269V-7AC	Cypress Semiconductor Corp	IC SRAM 256KBIT PAR 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: 83 MHz Write Cycle Time - Word, Page: - Access Time: 7.5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: -	Request a Quote	SRAM	SRAM - Dual Port, Synchronous	256Kbit	Parallel	83 MHz	-	7.5 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
AS4C4M32S-6BCN	Alliance Memory, Inc.	IC DRAM 128MBIT LVTTL 90TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: -	재고570	DRAM	SDRAM	128Mbit	LVTTL	166 MHz	-	5.4 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
CAT24C512C8ATR	onsemi	CAT24C512 - EEPROM 512KBIT 64K X Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IS62WVS2568GBLL-45NLI	ISSI, Integrated Silicon Solution Inc	2Mb, Serial SRAM, 2.7V-3.6V, 45M Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 2Mbit Memory Interface: SPI - Quad I/O, SDI Clock Frequency: 45 MHz Write Cycle Time - Word, Page: - Access Time: 15 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	SRAM	SRAM - Synchronous	2Mbit	SPI - Quad I/O, SDI	45 MHz	-	15 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT46H1DBB5-DC-TR	Micron Technology Inc.	IC MOBILE DDR 512M NAX16 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F2G01ABBGD12-AUT-G	Micron Technology Inc.	SLC 2G 2GX1 TBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
M5M5256DVP-70XG-BE	Renesas Electronics Corporation	STANDARD SRAM, 32KX8 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

MT42L64M32D1TK-18 AAT:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 533MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,056

DRAM

SDRAM - Mobile LPDDR2

2Gb (64M x 32)

Parallel

533MHz

-

1.14 V ~ 1.3 V

-40°C ~ 105°C (TC)

-

MTFC32GJTED-IT

Micron Technology Inc.

IC FLASH 256GBIT 169VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 169-VFBGA
Supplier Device Package: 169-VFBGA (14x18)

패키지: 169-VFBGA

재고4,096

FLASH

FLASH - NAND

256Gb (32G x 8)

MMC

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

169-VFBGA

169-VFBGA (14x18)

IDT70P3307S233RM

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 233MHZ 576FCBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous QDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 233MHz
Write Cycle Time - Word, Page: -
Access Time: 7.2ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 576-BBGA, FCBGA
Supplier Device Package: 576-FCBGA (25x25)

패키지: 576-BBGA, FCBGA

재고4,560

SRAM

SRAM - Dual Port, Synchronous QDR II

18Mb (1M x 18)

Parallel

233MHz

-

7.2ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

576-BBGA, FCBGA

576-FCBGA (25x25)

CY62138FV30LL-45ZSXIT

Cypress Semiconductor Corp

IC SRAM 2MBIT 45NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고7,680

SRAM

SRAM - Asynchronous

2Mb (256K x 8)

Parallel

-

45ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

CYD09S72V18-200BBXC

Cypress Semiconductor Corp

IC SRAM 9MBIT 200MHZ 256FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 9Mb (128K x 72)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.3ns
Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-FBGA (17x17)

패키지: 256-LBGA

재고4,656

SRAM

SRAM - Dual Port, Synchronous

9Mb (128K x 72)

Parallel

200MHz

-

3.3ns

1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-FBGA (17x17)

AT49BV002AN-70VI

Microchip Technology

IC FLASH 2MBIT 70NS 32VSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP

패키지: 32-TFSOP (0.488", 12.40mm Width)

재고7,952

FLASH

2Mb (256K x 8)

Parallel

-

50µs

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-VSOP

DS1249W-150

Maxim Integrated

IC NVSRAM 2MBIT 150NS 32EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 150ns
Access Time: 150ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP Module (0.600", 15.24mm)
Supplier Device Package: 32-EDIP

패키지: 32-DIP Module (0.600", 15.24mm)

재고2,432

NVSRAM

NVSRAM (Non-Volatile SRAM)

2Mb (256K x 8)

Parallel

-

150ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Through Hole

32-DIP Module (0.600", 15.24mm)

32-EDIP

AT24C164-10PC

Microchip Technology

IC EEPROM 16KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고43,464

EEPROM

16Kb (2K x 8)

I2C

400kHz

10ms

900ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

AT24C64-10PI

Microchip Technology

IC EEPROM 64KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고3,344

EEPROM

64Kb (8K x 8)

I2C

400kHz

10ms

900ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

MTFC16GJDDQ-4M IT

Micron Technology Inc.

IC FLASH 128GBIT 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LBGA (14x18)

패키지: 100-LBGA

재고7,696

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LBGA

100-LBGA (14x18)

AS7C34098A-15JIN

Alliance Memory, Inc.

IC SRAM 4MBIT 15NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

패키지: 44-BSOJ (0.400", 10.16mm Width)

재고9,876

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

15ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

CY14ME064J2-SXQT

Cypress Semiconductor Corp

IC NVSRAM 64KBIT 3.4MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 3.4MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,808

NVSRAM

NVSRAM (Non-Volatile SRAM)

64Kb (8K x 8)

I2C

3.4MHz

-

4.5 V ~ 5.5 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS39LV512-70JCE

ISSI, Integrated Silicon Solution Inc

IC FLASH 512KBIT 70NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (11.43x13.97)

패키지: 32-LCC (J-Lead)

재고7,568

FLASH

FLASH - NOR

512Kb (64K x 8)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

32-LCC (J-Lead)

32-PLCC (11.43x13.97)

93LC46-I/P

Microchip Technology

IC EEPROM 1KBIT 1MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8, 64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고4,192

EEPROM

1Kb (128 x 8, 64 x 16)

SPI

2MHz

10ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

24LC025-I/P

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고2,448

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

25LC128T-I/SN

Microchip Technology

IC EEPROM 128KBIT 10MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,024

EEPROM

128Kb (16K x 8)

SPI

10MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT40A1G8PM-083E:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고8,364

DRAM

SDRAM - DDR4

8Gb (1G x 8)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

S29GL256S10FAIV13

Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

패키지: 64-LBGA

재고4,608

FLASH

FLASH - NOR

256Mb (16M x 16)

Parallel

-

60ns

100ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

MX25L12845GXCI-08G

Macronix

IC FLASH 128MBIT

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 120MHz
Write Cycle Time - Word, Page: 30µs, 750µs
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA, CSPBGA
Supplier Device Package: 24-CSPBGA (6x8)

패키지: 24-TBGA, CSPBGA

재고6,128

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

120MHz

30µs, 750µs

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA, CSPBGA

24-CSPBGA (6x8)

NV25640DWHFT3G

ON Semiconductor

64KB SPI SER CMOS EEPROM

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: -
Memory Size: 64K (8K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 4ms
Access Time: 40ns
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,248

EEPROM

-

64K (8K x 8)

SPI

10MHz

4ms

40ns

2.5V ~ 5.5V

-40°C ~ 150°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

W25M02GWZEIG-TR

Winbond Electronics

IC FLASH 2GBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 700µs
Access Time: 8 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

2Gbit

SPI - Quad I/O

104 MHz

700µs

8 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

CY7C09269V-7AC

Cypress Semiconductor Corp

IC SRAM 256KBIT PAR 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: 83 MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: -

Request a Quote

SRAM

SRAM - Dual Port, Synchronous

256Kbit

Parallel

83 MHz

-

7.5 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

AS4C4M32S-6BCN

Alliance Memory, Inc.

IC DRAM 128MBIT LVTTL 90TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: -

재고570

DRAM

SDRAM

128Mbit

LVTTL

166 MHz

-

5.4 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

CAT24C512C8ATR

onsemi

CAT24C512 - EEPROM 512KBIT 64K X

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IS62WVS2568GBLL-45NLI

ISSI, Integrated Silicon Solution Inc

2Mb, Serial SRAM, 2.7V-3.6V, 45M

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 2Mbit
Memory Interface: SPI - Quad I/O, SDI
Clock Frequency: 45 MHz
Write Cycle Time - Word, Page: -
Access Time: 15 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

SRAM

SRAM - Synchronous

2Mbit

SPI - Quad I/O, SDI

45 MHz

-

15 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT46H1DBB5-DC-TR

Micron Technology Inc.

IC MOBILE DDR 512M NAX16 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT29F2G01ABBGD12-AUT-G

Micron Technology Inc.

SLC 2G 2GX1 TBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

M5M5256DVP-70XG-BE

Renesas Electronics Corporation

STANDARD SRAM, 32KX8

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-