페이지 277 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS29GL512S-11TFV020	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,520	FLASH	FLASH - NOR	512Mb (64M x 8)	Parallel	-	60ns	110ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
CY7C131E-25JXCT	Cypress Semiconductor Corp	IC SRAM 8KBIT 25NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	패키지: 52-LCC (J-Lead)	재고7,936	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
MT29C4G48MAAGBAAKS-5 WT	Micron Technology Inc.	IC FLASH/LPDRAM 6GBIT 137VFBGA Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 4Gb (512M x 8)(NAND), 2Gb (64M x 32)(LPDRAM) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 137-VFBGA Supplier Device Package: 137-VFBGA (13x10.5)	패키지: 137-VFBGA	재고5,840	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	4Gb (512M x 8)(NAND), 2Gb (64M x 32)(LPDRAM)	Parallel	200MHz	-	-	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	Surface Mount	137-VFBGA	137-VFBGA (13x10.5)
93LC76AT-I/ST	Microchip Technology	IC EEPROM 8KBIT 3MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고4,752	EEPROM	EEPROM	8Kb (1K x 8)	SPI	3MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MT47H256M4CF-3:H	Micron Technology Inc.	IC SDRAM 1GBIT 333MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (256M x 4) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고4,320	DRAM	SDRAM - DDR2	1Gb (256M x 4)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
STK14C88-3WF35	Cypress Semiconductor Corp	IC NVSRAM 256KBIT 35NS 32DIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-PDIP	패키지: 32-DIP (0.600", 15.24mm)	재고4,000	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	32-DIP (0.600", 15.24mm)	32-PDIP
CAT28F001L-90B	ON Semiconductor	IC FLASH 1MBIT 90NS 32DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-PDIP	패키지: 32-DIP (0.600", 15.24mm)	재고3,808	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	90ns	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	32-DIP (0.600", 15.24mm)	32-PDIP
IDT71V256SA20YI8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 20NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	패키지: 28-BSOJ (0.300", 7.62mm Width)	재고5,072	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	20ns	20ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
W25P40VSNIG T&R	Winbond Electronics	IC FLASH 4MBIT 40MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 40MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,432	FLASH	FLASH	4Mb (512K x 8)	SPI	40MHz	5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
M29W128FT70N6E	STMicroelectronics	IC FLASH 128MBIT 70NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8, 8M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	패키지: 56-TFSOP (0.724", 18.40mm Width)	재고5,648	FLASH	FLASH - NOR	128Mb (16M x 8, 8M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
70V7519S166BCI8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 166MHZ 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.6ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고3,712	SRAM	SRAM - Dual Port, Synchronous	9Mb (256K x 36)	Parallel	166MHz	-	3.6ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
7008L35PF8	IDT, Integrated Device Technology Inc	IC SRAM 512KBIT 35NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고6,128	SRAM	SRAM - Dual Port, Asynchronous	512Kb (64K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
7014S25J8	IDT, Integrated Device Technology Inc	IC SRAM 36KBIT 25NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 36Kb (4K x 9) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	패키지: 52-LCC (J-Lead)	재고5,808	SRAM	SRAM - Dual Port, Asynchronous	36Kb (4K x 9)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
IS45S16160J-7BLA1-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 143MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고7,840	DRAM	SDRAM	256Mb (16M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS43R83200F-6TL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 166MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP II	패키지: 66-TSSOP (0.400", 10.16mm Width)	재고2,160	DRAM	SDRAM - DDR	256Mb (32M x 8)	Parallel	166MHz	15ns	700ps	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP II
S-25C020A0I-T8T1G	SII Semiconductor Corporation	IC EEPROM 2KBIT 5MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: SPI Clock Frequency: 5MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고3,248	EEPROM	EEPROM	2Kb (256 x 8)	SPI	5MHz	4ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IS43LD16640C-25BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 400MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고6,852	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (64M x 16)	Parallel	400MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
CAT25640LI-G	ON Semiconductor	IC EEPROM 64KBIT 20MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고283,716	EEPROM	EEPROM	64Kb (8K x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IS43R86400E-5BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 200MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (13x8)	패키지: 60-TFBGA	재고5,680	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	200MHz	15ns	700ps	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (13x8)
IS61VPS102418A-200B3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	패키지: 165-TBGA	재고6,848	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	200MHz	-	3.1ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
MT29F1G08ABBEAM68M3WC1	Micron Technology Inc.	SLC 1G DIE 128MX8 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,744	-	-	-	-	-	-	-	-	-	-	-	-
MT35XL01GBBA2G12-0AAT TR	Micron Technology Inc.	SERIAL NOR SLC 128MX8 TBGA DDP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Gb (128M x 8) Memory Interface: Xccela Bus Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TPBGA	패키지: 24-TBGA	재고5,184	FLASH	FLASH	1Gb (128M x 8)	Xccela Bus	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C	Surface Mount	24-TBGA	24-TPBGA
MT40A1G8SA-062E:E TR	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.6GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,416	DRAM	SDRAM - DDR4	8Gb (1G x 8)	Parallel	1.6GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
FEMC064GBE-TC40	Flexxon Pte Ltd	IC FLASH 512GBIT EMMC 153FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 512Gbit Memory Interface: eMMC Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-FBGA (11.5x13)	패키지: -	재고15	FLASH	FLASH - NAND (TLC)	512Gbit	eMMC	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C	Surface Mount	153-VFBGA	153-FBGA (11.5x13)
W25Q64FVZPBQ	Winbond Electronics	IC FLASH 64MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 50µs, 3ms Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	패키지: -	Request a Quote	FLASH	FLASH - NOR	64Mbit	SPI - Quad I/O, QPI	104 MHz	50µs, 3ms	7 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
CY27C256A-200WMB	Cypress Semiconductor Corp	IC EPROM 256KBIT PAR 28CERDIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - UV Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 200 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Window Supplier Device Package: 28-CerDip	패키지: -	Request a Quote	EPROM	EPROM - UV	256Kbit	Parallel	-	-	200 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm) Window	28-CerDip
W632GU8NB09I-TR	Winbond Electronics	IC DRAM 2GBIT PAR 78VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 1.066 GHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-VFBGA (8x10.5)	패키지: -	Request a Quote	DRAM	SDRAM - DDR3L	2Gbit	Parallel	1.066 GHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	78-VFBGA	78-VFBGA (8x10.5)
E3203006443	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

IS29GL512S-11TFV020

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,520

FLASH

FLASH - NOR

512Mb (64M x 8)

Parallel

-

60ns

110ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

CY7C131E-25JXCT

Cypress Semiconductor Corp

IC SRAM 8KBIT 25NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

패키지: 52-LCC (J-Lead)

재고7,936

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

MT29C4G48MAAGBAAKS-5 WT

Micron Technology Inc.

IC FLASH/LPDRAM 6GBIT 137VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 4Gb (512M x 8)(NAND), 2Gb (64M x 32)(LPDRAM)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 137-VFBGA
Supplier Device Package: 137-VFBGA (13x10.5)

패키지: 137-VFBGA

재고5,840

FLASH, RAM

FLASH - NAND, Mobile LPDRAM

4Gb (512M x 8)(NAND), 2Gb (64M x 32)(LPDRAM)

Parallel

200MHz

-

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

Surface Mount

137-VFBGA

137-VFBGA (13x10.5)

93LC76AT-I/ST

Microchip Technology

IC EEPROM 8KBIT 3MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고4,752

EEPROM

8Kb (1K x 8)

SPI

3MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MT47H256M4CF-3:H

Micron Technology Inc.

IC SDRAM 1GBIT 333MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (256M x 4)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고4,320

DRAM

SDRAM - DDR2

1Gb (256M x 4)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

STK14C88-3WF35

Cypress Semiconductor Corp

IC NVSRAM 256KBIT 35NS 32DIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-PDIP

패키지: 32-DIP (0.600", 15.24mm)

재고4,000

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

32-DIP (0.600", 15.24mm)

32-PDIP

CAT28F001L-90B

ON Semiconductor

IC FLASH 1MBIT 90NS 32DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-PDIP

패키지: 32-DIP (0.600", 15.24mm)

재고3,808

FLASH

1Mb (128K x 8)

Parallel

-

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

32-DIP (0.600", 15.24mm)

32-PDIP

IDT71V256SA20YI8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 20NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

패키지: 28-BSOJ (0.300", 7.62mm Width)

재고5,072

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

20ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

W25P40VSNIG T&R

Winbond Electronics

IC FLASH 4MBIT 40MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,432

FLASH

4Mb (512K x 8)

SPI

40MHz

5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

M29W128FT70N6E

STMicroelectronics

IC FLASH 128MBIT 70NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8, 8M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

패키지: 56-TFSOP (0.724", 18.40mm Width)

재고5,648

FLASH

FLASH - NOR

128Mb (16M x 8, 8M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

70V7519S166BCI8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 166MHZ 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.6ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고3,712

SRAM

SRAM - Dual Port, Synchronous

9Mb (256K x 36)

Parallel

166MHz

-

3.6ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

7008L35PF8

IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 35NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고6,128

SRAM

SRAM - Dual Port, Asynchronous

512Kb (64K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

7014S25J8

IDT, Integrated Device Technology Inc

IC SRAM 36KBIT 25NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 36Kb (4K x 9)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

패키지: 52-LCC (J-Lead)

재고5,808

SRAM

SRAM - Dual Port, Asynchronous

36Kb (4K x 9)

Parallel

-

25ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

IS45S16160J-7BLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고7,840

DRAM

SDRAM

256Mb (16M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS43R83200F-6TL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II

패키지: 66-TSSOP (0.400", 10.16mm Width)

재고2,160

DRAM

SDRAM - DDR

256Mb (32M x 8)

Parallel

166MHz

15ns

700ps

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP II

S-25C020A0I-T8T1G

SII Semiconductor Corporation

IC EEPROM 2KBIT 5MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: SPI
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고3,248

EEPROM

2Kb (256 x 8)

SPI

5MHz

4ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IS43LD16640C-25BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 400MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고6,852

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (64M x 16)

Parallel

400MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

CAT25640LI-G

ON Semiconductor

IC EEPROM 64KBIT 20MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고283,716

EEPROM

64Kb (8K x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

IS43R86400E-5BL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 200MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (13x8)

패키지: 60-TFBGA

재고5,680

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

200MHz

15ns

700ps

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (13x8)

IS61VPS102418A-200B3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

재고6,848

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

200MHz

-

3.1ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

MT29F1G08ABBEAM68M3WC1

Micron Technology Inc.

SLC 1G DIE 128MX8

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,744

-

MT35XL01GBBA2G12-0AAT TR

Micron Technology Inc.

SERIAL NOR SLC 128MX8 TBGA DDP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Gb (128M x 8)
Memory Interface: Xccela Bus
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TPBGA

패키지: 24-TBGA

재고5,184

FLASH

1Gb (128M x 8)

Xccela Bus

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C

Surface Mount

24-TBGA

24-TPBGA

MT40A1G8SA-062E:E TR

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.6GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,416

DRAM

SDRAM - DDR4

8Gb (1G x 8)

Parallel

1.6GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

FEMC064GBE-TC40

Flexxon Pte Ltd

IC FLASH 512GBIT EMMC 153FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 512Gbit
Memory Interface: eMMC
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-FBGA (11.5x13)

패키지: -

재고15

FLASH

FLASH - NAND (TLC)

512Gbit

eMMC

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C

Surface Mount

153-VFBGA

153-FBGA (11.5x13)

W25Q64FVZPBQ

Winbond Electronics

IC FLASH 64MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

패키지: -

Request a Quote

FLASH

FLASH - NOR

64Mbit

SPI - Quad I/O, QPI

104 MHz

50µs, 3ms

7 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

CY27C256A-200WMB

Cypress Semiconductor Corp

IC EPROM 256KBIT PAR 28CERDIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - UV
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 200 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm) Window
Supplier Device Package: 28-CerDip

패키지: -

Request a Quote

EPROM

EPROM - UV

256Kbit

Parallel

-

200 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm) Window

28-CerDip

W632GU8NB09I-TR

Winbond Electronics

IC DRAM 2GBIT PAR 78VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 1.066 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-VFBGA (8x10.5)

패키지: -

Request a Quote

DRAM

SDRAM - DDR3L

2Gbit

Parallel

1.066 GHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

78-VFBGA

78-VFBGA (8x10.5)

E3203006443

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-