페이지 338 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IDT71V2576S133PFI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고7,024	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
AT93C66AW-10SU-1.8	Microchip Technology	IC EEPROM 4KBIT 2MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8, 256 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,008	EEPROM	EEPROM	4Kb (512 x 8, 256 x 16)	SPI	2MHz	10ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
M27C512-90C1	STMicroelectronics	IC OTP 512KBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC (11.35x13.89)	패키지: 32-LCC (J-Lead)	재고72,060	EPROM	EPROM - OTP	512Kb (64K x 8)	Parallel	-	-	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	32-LCC (J-Lead)	32-PLCC (11.35x13.89)
CY14B101K-SP35XI	Cypress Semiconductor Corp	IC NVSRAM 1MBIT 35NS 48SSOP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-BSSOP (0.295", 7.50mm Width) Supplier Device Package: 48-SSOP	패키지: 48-BSSOP (0.295", 7.50mm Width)	재고5,856	NVSRAM	NVSRAM (Non-Volatile SRAM)	1Mb (128K x 8)	Parallel	-	35ns	35ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-BSSOP (0.295", 7.50mm Width)	48-SSOP
MT48H16M16LFBF-75 AT:G TR	Micron Technology Inc.	IC SDRAM 256MBIT 133MHZ 54VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-VFBGA (8x9)	패키지: 54-VFBGA	재고7,648	DRAM	SDRAM - Mobile LPSDR	256Mb (16M x 16)	Parallel	133MHz	15ns	5.4ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	54-VFBGA	54-VFBGA (8x9)
DS2045AB-70#	Maxim Integrated	IC NVSRAM 1MBIT 70NS 256BGA Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 256-BGA Supplier Device Package: 256-BGA (27x27)	패키지: 256-BGA	재고3,200	NVSRAM	NVSRAM (Non-Volatile SRAM)	1Mb (128K x 8)	Parallel	-	70ns	70ns	4.75 V ~ 5.25 V	-40°C ~ 85°C (TA)	Surface Mount	256-BGA	256-BGA (27x27)
PSD4235G2-90UI	STMicroelectronics	IC FLASH 4MBIT 90NS 80LQFP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-LQFP (12x12)	패키지: 80-LQFP	재고3,376	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	-	90ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	80-LQFP	80-LQFP (12x12)
AT27C010-70JI	Microchip Technology	IC OTP 1MBIT 70NS 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고6,224	EPROM	EPROM - OTP	1Mb (128K x 8)	Parallel	-	-	70ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT45DB161B-CI	Microchip Technology	IC FLASH 16MBIT 20MHZ 24CBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (528 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 14ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 24-LBGA, CSPBGA Supplier Device Package: 24-CBGA	패키지: 24-LBGA, CSPBGA	재고4,288	FLASH	FLASH	16Mb (528 Bytes x 4096 pages)	SPI	20MHz	14ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	24-LBGA, CSPBGA	24-CBGA
70V3599S133BFGI8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 208FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: 208-CABGA (15x15)	패키지: 208-LFBGA	재고2,160	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (128K x 36)	Parallel	133MHz	-	4.2ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	208-LFBGA	208-CABGA (15x15)
CY14B116N-BA25XI	Cypress Semiconductor Corp	NON VOLATILE SRAMS Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,184	NVSRAM	NVSRAM (Non-Volatile SRAM)	16Mb (1M x 16)	Parallel	-	25ns	25ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
7024L30J	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 30NS 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (4K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 30ns Access Time: 30ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.21x29.21)	패키지: 84-LCC (J-Lead)	재고4,944	SRAM	SRAM - Dual Port, Asynchronous	64Kb (4K x 16)	Parallel	-	30ns	30ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.21x29.21)
7025S55PF8	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 55NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고2,352	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MTFC4GACAAAM-4M IT	Micron Technology Inc.	IC FLASH EMMC 32G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고10,428	-	-	-	-	-	-	-	-	-	-	-	-
71V2546S150BG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 150MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고7,808	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
BR25L020FVT-WE2	Rohm Semiconductor	IC EEPROM 2KBIT 5MHZ 8TSSOP-B Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: SPI Clock Frequency: 5MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP-B	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고4,064	EEPROM	EEPROM	2Kb (256 x 8)	SPI	5MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP-B
U62256ADK07LLG1	Alliance Memory, Inc.	IC SRAM 256KBIT 70NS 28DIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP	패키지: 28-DIP (0.600", 15.24mm)	재고7,104	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	28-DIP (0.600", 15.24mm)	28-PDIP
MT29F8G08ADBDAH4-AAT:D	Micron Technology Inc.	IC FLASH 8G PARALLEL FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,664	FLASH	FLASH - NAND	8Gb (1G x 8)	Parallel	-	-	-	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	-	-	-
W25Q64CVSSJP	Winbond Electronics	IC FLASH MEMORY 64MB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,160	-	-	-	-	-	-	-	-	-	-	-	-
SST25PF040CT-40E/SN18GVAO	Microchip Technology	4MB SPI FLASH Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 40MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,696	FLASH	FLASH	4Mb (512K x 8)	SPI	40MHz	5ms	-	2.3V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT53E1G32D2FW-046-WT-B	Micron Technology Inc.	IC DRAM 32GBIT 2.133GHZ 200VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	패키지: -	재고3,828	DRAM	SDRAM - Mobile LPDDR4	32Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-25°C ~ 85°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
70V06S35PFG8	Renesas Electronics Corporation	IC SRAM 128KBIT PARALLEL 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	패키지: -	Request a Quote	SRAM	SRAM - Dual Port, Asynchronous	128Kbit	Parallel	-	35ns	35 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
707288L15PFI	Renesas Electronics Corporation	IC RAM Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: -	Request a Quote	SRAM	SRAM - Dual Port, Asynchronous	1Mbit	Parallel	-	15ns	15 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
S99GL128S90DHI010	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
W25Q32JWZPIM	Winbond Electronics	IC FLASH 32MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 5ms Access Time: 6 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	패키지: -	재고360	FLASH	FLASH - NOR	32Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	5ms	6 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
GD25LQ64EW2GR	GigaDevice Semiconductor (HK) Limited	IC FLASH 64MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 64Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 60µs, 2.4ms Access Time: 6 ns Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (5x6)	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	64Mbit	SPI - Quad I/O, QPI	133 MHz	60µs, 2.4ms	6 ns	1.65V ~ 2V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (5x6)
MT40A1G16KNR-075-E	Micron Technology Inc.	IC SDRAM DDR4 16GB Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 16Gbit Memory Interface: Parallel Clock Frequency: 1.33 GHz Write Cycle Time - Word, Page: 15ns Access Time: 19 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	패키지: -	Request a Quote	DRAM	SDRAM - DDR4	16Gbit	Parallel	1.33 GHz	15ns	19 ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
W25Q80DVUXBE	Winbond Electronics	IC FLASH 8MBIT SPI/QUAD 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 30µs, 3ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-USON (2x3)	패키지: -	Request a Quote	FLASH	FLASH - NOR	8Mbit	SPI - Quad I/O	104 MHz	30µs, 3ms	6 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-USON (2x3)

IDT71V2576S133PFI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고7,024

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

AT93C66AW-10SU-1.8

Microchip Technology

IC EEPROM 4KBIT 2MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8, 256 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,008

EEPROM

4Kb (512 x 8, 256 x 16)

SPI

2MHz

10ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

M27C512-90C1

STMicroelectronics

IC OTP 512KBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (11.35x13.89)

패키지: 32-LCC (J-Lead)

재고72,060

EPROM

EPROM - OTP

512Kb (64K x 8)

Parallel

-

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

32-LCC (J-Lead)

32-PLCC (11.35x13.89)

CY14B101K-SP35XI

Cypress Semiconductor Corp

IC NVSRAM 1MBIT 35NS 48SSOP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Supplier Device Package: 48-SSOP

패키지: 48-BSSOP (0.295", 7.50mm Width)

재고5,856

NVSRAM

NVSRAM (Non-Volatile SRAM)

1Mb (128K x 8)

Parallel

-

35ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-BSSOP (0.295", 7.50mm Width)

48-SSOP

MT48H16M16LFBF-75 AT:G TR

Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 54VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (8x9)

패키지: 54-VFBGA

재고7,648

DRAM

SDRAM - Mobile LPSDR

256Mb (16M x 16)

Parallel

133MHz

15ns

5.4ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

54-VFBGA

54-VFBGA (8x9)

DS2045AB-70#

Maxim Integrated

IC NVSRAM 1MBIT 70NS 256BGA

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-BGA
Supplier Device Package: 256-BGA (27x27)

패키지: 256-BGA

재고3,200

NVSRAM

NVSRAM (Non-Volatile SRAM)

1Mb (128K x 8)

Parallel

-

70ns

4.75 V ~ 5.25 V

-40°C ~ 85°C (TA)

Surface Mount

256-BGA

256-BGA (27x27)

PSD4235G2-90UI

STMicroelectronics

IC FLASH 4MBIT 90NS 80LQFP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-LQFP (12x12)

패키지: 80-LQFP

재고3,376

FLASH

4Mb (512K x 8)

Parallel

-

90ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

80-LQFP

80-LQFP (12x12)

AT27C010-70JI

Microchip Technology

IC OTP 1MBIT 70NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고6,224

EPROM

EPROM - OTP

1Mb (128K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT45DB161B-CI

Microchip Technology

IC FLASH 16MBIT 20MHZ 24CBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (528 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 14ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 24-LBGA, CSPBGA
Supplier Device Package: 24-CBGA

패키지: 24-LBGA, CSPBGA

재고4,288

FLASH

16Mb (528 Bytes x 4096 pages)

SPI

20MHz

14ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

24-LBGA, CSPBGA

24-CBGA

70V3599S133BFGI8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 208FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)

패키지: 208-LFBGA

재고2,160

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (128K x 36)

Parallel

133MHz

-

4.2ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

208-LFBGA

208-CABGA (15x15)

CY14B116N-BA25XI

Cypress Semiconductor Corp

NON VOLATILE SRAMS

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,184

NVSRAM

NVSRAM (Non-Volatile SRAM)

16Mb (1M x 16)

Parallel

-

25ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

7024L30J

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 30NS 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 30ns
Access Time: 30ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.21x29.21)

패키지: 84-LCC (J-Lead)

재고4,944

SRAM

SRAM - Dual Port, Asynchronous

64Kb (4K x 16)

Parallel

-

30ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.21x29.21)

7025S55PF8

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 55NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고2,352

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MTFC4GACAAAM-4M IT

Micron Technology Inc.

IC FLASH EMMC 32G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고10,428

-

71V2546S150BG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 150MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고7,808

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

BR25L020FVT-WE2

Rohm Semiconductor

IC EEPROM 2KBIT 5MHZ 8TSSOP-B

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: SPI
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고4,064

EEPROM

2Kb (256 x 8)

SPI

5MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP-B

U62256ADK07LLG1

Alliance Memory, Inc.

IC SRAM 256KBIT 70NS 28DIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP

패키지: 28-DIP (0.600", 15.24mm)

재고7,104

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

28-DIP (0.600", 15.24mm)

28-PDIP

MT29F8G08ADBDAH4-AAT:D

Micron Technology Inc.

IC FLASH 8G PARALLEL FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,664

FLASH

FLASH - NAND

8Gb (1G x 8)

Parallel

-

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

-

W25Q64CVSSJP

Winbond Electronics

IC FLASH MEMORY 64MB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,160

-

SST25PF040CT-40E/SN18GVAO

Microchip Technology

4MB SPI FLASH

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,696

FLASH

4Mb (512K x 8)

SPI

40MHz

5ms

-

2.3V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT53E1G32D2FW-046-WT-B

Micron Technology Inc.

IC DRAM 32GBIT 2.133GHZ 200VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

패키지: -

재고3,828

DRAM

SDRAM - Mobile LPDDR4

32Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-25°C ~ 85°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

70V06S35PFG8

Renesas Electronics Corporation

IC SRAM 128KBIT PARALLEL 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

패키지: -

Request a Quote

SRAM

SRAM - Dual Port, Asynchronous

128Kbit

Parallel

-

35ns

35 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

707288L15PFI

Renesas Electronics Corporation

IC RAM

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: -

Request a Quote

SRAM

SRAM - Dual Port, Asynchronous

1Mbit

Parallel

-

15ns

15 ns

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

S99GL128S90DHI010

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

W25Q32JWZPIM

Winbond Electronics

IC FLASH 32MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 6 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

패키지: -

재고360

FLASH

FLASH - NOR

32Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

5ms

6 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

GD25LQ64EW2GR

GigaDevice Semiconductor (HK) Limited

IC FLASH 64MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 60µs, 2.4ms
Access Time: 6 ns
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (5x6)

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

64Mbit

SPI - Quad I/O, QPI

133 MHz

60µs, 2.4ms

6 ns

1.65V ~ 2V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (5x6)

MT40A1G16KNR-075-E

Micron Technology Inc.

IC SDRAM DDR4 16GB

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 16Gbit
Memory Interface: Parallel
Clock Frequency: 1.33 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

패키지: -

Request a Quote

DRAM

SDRAM - DDR4

16Gbit

Parallel

1.33 GHz

15ns

19 ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

W25Q80DVUXBE

Winbond Electronics

IC FLASH 8MBIT SPI/QUAD 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 30µs, 3ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)

패키지: -

Request a Quote

FLASH

FLASH - NOR

8Mbit

SPI - Quad I/O

104 MHz

30µs, 3ms

6 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-USON (2x3)