페이지 35 - 메모리 | 집적 회로(IC) | Heisener Electronics
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부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
S25FL064LABBHB030
Cypress Semiconductor Corp

IC FLASH NOR 64MBIT 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,640
FLASH
FLASH - NOR
64Mb (8M x 8)
SPI - Quad I/O, QPI
108MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
-
-
-
hot W25Q16DWUUIG
Winbond Electronics

IC FLASH 16MBIT 104MHZ 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-USON (4x3)
패키지: 8-UDFN Exposed Pad
재고34,788
FLASH
FLASH - NOR
16Mb (2M x 8)
SPI
104MHz
3ms
-
1.65 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
8-UDFN Exposed Pad
8-USON (4x3)
AT45DB041D-MU-SL955
Adesto Technologies

IC FLASH 4MBIT 66MHZ 8VDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (256 Bytes x 2048 pages)
  • Memory Interface: SPI
  • Clock Frequency: 66MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-VDFN (6x5)
패키지: 8-VDFN Exposed Pad
재고2,016
FLASH
FLASH
4Mb (256 Bytes x 2048 pages)
SPI
66MHz
4ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-VDFN Exposed Pad
8-VDFN (6x5)
M29W320ET70ZS6F TR
Micron Technology Inc.

IC FLASH 32MBIT 70NS 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8, 2M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (11x13)
패키지: 64-LBGA
재고6,928
FLASH
FLASH - NOR
32Mb (4M x 8, 2M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (11x13)
MT29C4G96MAYBACJG-5 WT
Micron Technology Inc.

IC FLASH/LPDRAM 8GBIT 168VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH, RAM
  • Technology: FLASH - NAND, Mobile LPDRAM
  • Memory Size: 4Gb (512M x 8)(NAND), 4Gb (128M x 32)(LPDRAM)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 168-VFBGA
  • Supplier Device Package: 168-VFBGA (12x12)
패키지: 168-VFBGA
재고7,024
FLASH, RAM
FLASH - NAND, Mobile LPDRAM
4Gb (512M x 8)(NAND), 4Gb (128M x 32)(LPDRAM)
Parallel
200MHz
-
-
1.7 V ~ 1.95 V
-25°C ~ 85°C (TA)
Surface Mount
168-VFBGA
168-VFBGA (12x12)
M28W640HST70ZA6F
Micron Technology Inc.

IC FLASH 64MBIT 70NS 64TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-VFBGA
  • Supplier Device Package: 64-TFBGA (10.5x6.39)
패키지: 64-VFBGA
재고4,560
FLASH
FLASH - NOR
64Mb (4M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-VFBGA
64-TFBGA (10.5x6.39)
SST39WF1601-70-4I-MBQE-T
Microchip Technology

IC FLASH 16MBIT 70NS 48WFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 40µs
  • Access Time: 70ns
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-WFBGA
  • Supplier Device Package: 48-WFBGA (6x4)
패키지: 48-WFBGA
재고3,888
FLASH
FLASH
16Mb (1M x 16)
Parallel
-
40µs
70ns
1.65 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
48-WFBGA
48-WFBGA (6x4)
SST39WF1602-70-4I-MBQE
Microchip Technology

IC FLASH 16MBIT 70NS 48WFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 40µs
  • Access Time: 70ns
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-WFBGA
  • Supplier Device Package: 48-WFBGA (6x4)
패키지: 48-WFBGA
재고5,616
FLASH
FLASH
16Mb (1M x 16)
Parallel
-
40µs
70ns
1.65 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
48-WFBGA
48-WFBGA (6x4)
IDT71V67803S133PF8
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고3,680
SRAM
SRAM - Synchronous
9Mb (512K x 18)
Parallel
133MHz
-
4.2ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
hot CYD18S18V18-167BBAXI
Cypress Semiconductor Corp

IC SRAM 18MBIT 167MHZ 256FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4ns
  • Voltage - Supply: 1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 256-LBGA
  • Supplier Device Package: 256-FBGA (17x17)
패키지: 256-LBGA
재고5,312
SRAM
SRAM - Dual Port, Synchronous
18Mb (1M x 18)
Parallel
167MHz
-
4ns
1.42 V ~ 1.58 V, 1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
256-LBGA
256-FBGA (17x17)
AT27BV020-90JU
Microchip Technology

IC OTP 2MBIT 90NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고5,248
EPROM
EPROM - OTP
2Mb (256K x 8)
Parallel
-
-
90ns
2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
hot AT24C01-10PC
Microchip Technology

IC EEPROM 1KBIT 400KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 900ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고4,800
EEPROM
EEPROM
1Kb (128 x 8)
I2C
400kHz
10ms
900ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
7006L35G
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 35NS 68PGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (16K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 68-BPGA
  • Supplier Device Package: 68-PGA (29.46x29.46)
패키지: 68-BPGA
재고4,384
SRAM
SRAM - Dual Port, Asynchronous
128Kb (16K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
68-BPGA
68-PGA (29.46x29.46)
MT52L256M64D2PD-107 XT:B TR
Micron Technology Inc.

IC SDRAM 16GBIT 933MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR3
  • Memory Size: 16Gb (256M x 64)
  • Memory Interface: -
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.2V
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,440
DRAM
SDRAM - Mobile LPDDR3
16Gb (256M x 64)
-
933MHz
-
-
1.2V
-
-
-
-
R1LV0108ESN-5SI#B0
Renesas Electronics America

IC SRAM 1MBIT 55NS 32SOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.450", 11.40mm Width)
  • Supplier Device Package: 32-SOP
패키지: 32-SOIC (0.450", 11.40mm Width)
재고6,832
SRAM
SRAM
1Mb (128K x 8)
Parallel
-
55ns
55ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-SOIC (0.450", 11.40mm Width)
32-SOP
hot IS61LV12816L-10TLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 2MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: 44-TSOP (0.400", 10.16mm Width)
재고406,728
SRAM
SRAM - Asynchronous
2Mb (128K x 16)
Parallel
-
10ns
10ns
3.135 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
N25Q128A13EF740F TR
Micron Technology Inc.

IC FLASH 128MBIT 108MHZ 8VPDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (32M x 4)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 8ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-VDFPN (6x5) (MLP8)
패키지: 8-VDFN Exposed Pad
재고5,264
FLASH
FLASH - NOR
128Mb (32M x 4)
SPI
108MHz
8ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-VDFN Exposed Pad
8-VDFPN (6x5) (MLP8)
25LC040AT-E/ST
Microchip Technology

IC EEPROM 4KBIT 10MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고6,256
EEPROM
EEPROM
4Kb (512 x 8)
SPI
10MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
CY7C1481BV33-133AXI
Cypress Semiconductor Corp

IC SRAM 72MBIT 133MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6.5ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고3,584
SRAM
SRAM - Synchronous
72Mb (2M x 36)
Parallel
133MHz
-
6.5ns
3.135 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
RM24C256C-LSNI-B
Adesto Technologies

IC EEPROM 256KBIT 1MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256kb (64B Page Size)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 100µs, 5ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고21,780
EEPROM
EEPROM
256kb (64B Page Size)
I2C
1MHz
100µs, 5ms
-
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot AT45DB321E-MWHF-T
Adesto Technologies

IC FLASH 32MBIT 85MHZ 8VDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (528 Bytes x 8192 pages)
  • Memory Interface: SPI
  • Clock Frequency: 85MHz
  • Write Cycle Time - Word, Page: 8µs, 4ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-VDFN (6x8)
패키지: 8-VDFN Exposed Pad
재고71,424
FLASH
FLASH
32Mb (528 Bytes x 8192 pages)
SPI
85MHz
8µs, 4ms
-
2.3 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-VDFN Exposed Pad
8-VDFN (6x8)
23LC512-I/P
Microchip Technology

IC SRAM 512KBIT 20MHZ 8DIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고8,256
SRAM
SRAM
512Kb (64K x 8)
SPI - Quad I/O
20MHz
-
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
S29AL008J70TFN010
Cypress Semiconductor Corp

IC FLASH 8M PARALLEL 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8, 512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고19,500
FLASH
FLASH - NOR
8Mb (1M x 8, 512K x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
UPD46365094BF1-E40-EQ1-A
Renesas Electronics Corporation

QDR SRAM, 4MX9, 0.45NS

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
W634GU6QB-11
Winbond Electronics

IC DRAM 4GBIT PAR 96VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 4Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20 ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-VFBGA
  • Supplier Device Package: 96-VFBGA (7.5x13)
패키지: -
재고294
DRAM
SDRAM - DDR3L
4Gbit
Parallel
933 MHz
15ns
20 ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
96-VFBGA
96-VFBGA (7.5x13)
W25Q64JWTBIQ-TR
Winbond Electronics

IC FLASH 64MBIT SPI/QUAD 24TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (8x6)
패키지: -
Request a Quote
FLASH
FLASH - NOR
64Mbit
SPI - Quad I/O, QPI, DTR
133 MHz
3ms
6 ns
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-TFBGA (8x6)
UPD46184185BF1-E40-EQ1-A
Renesas Electronics Corporation

DDR SRAM, 1MX18, 0.45NS

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
S25HS01GTDPMHA013
Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 1Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: -
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FLASH
FLASH - NOR (SLC)
1Gbit
SPI - Quad I/O, QPI
133 MHz
-
-
1.7V ~ 2V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC