페이지 380 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
S25FL032P0XMFV013M	Cypress Semiconductor Corp	IC FLASH NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 5µs, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,832	FLASH	FLASH - NOR	32Mb (4M x 8)	SPI	104MHz	5µs, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
99326-E0496-B	Cypress Semiconductor Corp	IC FLASH NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,424	-	-	-	-	-	-	-	-	-	-	-	-
M25PX64-VMD6G	Micron Technology Inc.	IC FLASH 64MBIT 75MHZ 8VDFPN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VDFN (6x8)	패키지: 8-VDFN Exposed Pad	재고7,760	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI	75MHz	15ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-VDFN (6x8)
CY7C148-35PC	Cypress Semiconductor Corp	IC SRAM 4KBIT 35NS 18DIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Kb (1K x 4) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP	패키지: 18-DIP (0.300", 7.62mm)	재고5,216	SRAM	SRAM - Asynchronous	4Kb (1K x 4)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	18-DIP (0.300", 7.62mm)	18-DIP
IDT71V3579S65PF	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 6.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 6.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고2,944	SRAM	SRAM - Synchronous	4.5Mb (256K x 18)	Parallel	-	-	6.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
IDT71P72604S167BQ8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 167MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 8.4ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	패키지: 165-TBGA	재고3,952	SRAM	SRAM - Synchronous, QDR II	18Mb (512K x 36)	Parallel	167MHz	-	8.4ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
70P3519S166BCG	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 166MHZ 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.6ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고3,216	SRAM	SRAM - Dual Port, Synchronous	9Mb (256K x 36)	Parallel	166MHz	-	3.6ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
X28HC64J-90	Intersil	IC EEPROM 64KBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 5ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC (11.43x13.97)	패키지: 32-LCC (J-Lead)	재고12,804	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	5ms	90ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	32-LCC (J-Lead)	32-PLCC (11.43x13.97)
70V657S10BCG	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 10NS 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 1.125Mb (32K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고4,592	SRAM	SRAM - Dual Port, Asynchronous	1.125Mb (32K x 36)	Parallel	-	10ns	10ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
70V07L25JI	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 25NS 68PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 68-LCC (J-Lead) Supplier Device Package: 68-PLCC (24.21x24.21)	패키지: 68-LCC (J-Lead)	재고6,832	SRAM	SRAM - Dual Port, Asynchronous	256Kb (32K x 8)	Parallel	-	25ns	25ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	68-LCC (J-Lead)	68-PLCC (24.21x24.21)
W631GU6KB15I TR	Winbond Electronics	IC SDRAM 1GBIT 667MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-WBGA (9x13)	패키지: 96-TFBGA	재고3,104	DRAM	SDRAM - DDR3L	1Gb (64M x 16)	Parallel	667MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-WBGA (9x13)
MT29F1G08ABBDAHC-IT:D	Micron Technology Inc.	IC FLASH 1GBIT 25NS 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (10.5x13)	패키지: 63-VFBGA	재고14,004	FLASH	FLASH - NAND	1Gb (128M x 8)	Parallel	-	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (10.5x13)
W956D6HBCX7I TR	Winbond Electronics	IC PSRAM 64MBIT 133MHZ 54VFBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 70ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-VFBGA (6x8)	패키지: 54-VFBGA	재고3,472	PSRAM	PSRAM (Pseudo SRAM)	64Mb (4M x 16)	Parallel	133MHz	-	70ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TC)	Surface Mount	54-VFBGA	54-VFBGA (6x8)
N64S830HAS22IT	ON Semiconductor	IC SRAM 64KBIT 20MHZ 8SOIC Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 64Kb (8K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,176	SRAM	SRAM	64Kb (8K x 8)	SPI	20MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
M24C32-DRDW8TP/K	STMicroelectronics	IC EEPROM 32KBIT 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 4ms Access Time: 450ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고5,632	EEPROM	EEPROM	32Kb (4K x 8)	I2C	1MHz	4ms	450ns	1.8 V ~ 5.5 V	-40°C ~ 105°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MT47H256M4HQ-5E:E TR	Micron Technology Inc.	IC SDRAM 1GBIT 200MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (256M x 4) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 600ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-FBGA Supplier Device Package: 60-FBGA (8x11.5)	패키지: 60-FBGA	재고3,824	DRAM	SDRAM - DDR2	1Gb (256M x 4)	Parallel	200MHz	15ns	600ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	60-FBGA	60-FBGA (8x11.5)
AT25DF021A-MAHNHR-T	Adesto Technologies	IC FLASH 2MBIT 104MHZ 8UDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 12µs, 5ms Access Time: - Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	패키지: 8-UFDFN Exposed Pad	재고3,392	FLASH	FLASH	2Mb (256K x 8)	SPI	85MHz	12µs, 5ms	-	1.7 V ~ 3.6 V	-40°C ~ 125°C (TC)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
24VL024H/P	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.5 V ~ 3.6 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고15,498	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	1.5 V ~ 3.6 V	-20°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
71V546S100PFG	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 100MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고7,504	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	100MHz	-	5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
MT25QL256ABA8ESF-MSIT TR	Micron Technology Inc.	IC FLASH 256M SPI 133MHZ 16SOP2 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	패키지: 16-SOIC (0.295", 7.50mm Width)	재고6,992	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI	133MHz	8ms, 2.8ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
MT52L4DAPQ-DC TR	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR3 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,184	-	-	-	-	-	-	-	-	-	-	-	-
7015S17J8/E	IDT, Integrated Device Technology Inc	IC SRAM 72K PARALLEL 68PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 72Kb (8K x 9) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 17ns Access Time: 17ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 68-LCC (J-Lead) Supplier Device Package: 68-PLCC (24.21x24.21)	패키지: 68-LCC (J-Lead)	재고5,952	SRAM	SRAM - Dual Port, Asynchronous	72Kb (8K x 9)	Parallel	-	17ns	17ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	68-LCC (J-Lead)	68-PLCC (24.21x24.21)
S-93C66CD0H-A8T1U3	ABLIC Inc.	LINEAR IC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: Microwire Clock Frequency: 2 MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 1.6V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Exposed Pad Supplier Device Package: HSNT-8-A	패키지: -	Request a Quote	EEPROM	EEPROM	4Kbit	Microwire	2 MHz	4ms	-	1.6V ~ 5.5V	-40°C ~ 105°C (TA)	Surface Mount	8-SMD, Flat Lead Exposed Pad	HSNT-8-A
5962-8700206ZA	Renesas Electronics Corporation	IC SRAM 16KBIT PARALLEL SB48 Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 16Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-SIDE BRAZED	패키지: -	Request a Quote	SRAM	SRAM - Dual Port, Synchronous	16Kbit	Parallel	-	90ns	90 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-SIDE BRAZED
MT29F4T08EMLCHD4-QC-C	Micron Technology Inc.	TLC 4T 512GX8 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IS25LP016D-JMLE-TY	ISSI, Integrated Silicon Solution Inc	IC FLASH 16MBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 40µs, 800µs Access Time: 7 ns Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: -	Request a Quote	FLASH	FLASH - NOR	16Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	40µs, 800µs	7 ns	2.3V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
GS81302Q37AGD-450I	GSI Technology Inc.	IC SRAM 144MBIT PAR 165FPBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous, QDR II+ Memory Size: 144Mbit Memory Interface: Parallel Clock Frequency: 450 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FPBGA (13x15)	패키지: -	Request a Quote	SRAM	SRAM - Quad Port, Synchronous, QDR II+	144Mbit	Parallel	450 MHz	-	-	1.7V ~ 1.9V	-40°C ~ 100°C (TJ)	Surface Mount	165-LBGA	165-FPBGA (13x15)
MT53E512M16D1FW-046-AIT-D	Micron Technology Inc.	LPDDR4 8G 512MX16 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	8Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 95°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)

S25FL032P0XMFV013M

Cypress Semiconductor Corp

IC FLASH NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 5µs, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,832

FLASH

FLASH - NOR

32Mb (4M x 8)

SPI

104MHz

5µs, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

-

99326-E0496-B

Cypress Semiconductor Corp

IC FLASH NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,424

-

M25PX64-VMD6G

Micron Technology Inc.

IC FLASH 64MBIT 75MHZ 8VDFPN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VDFN (6x8)

패키지: 8-VDFN Exposed Pad

재고7,760

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI

75MHz

15ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-VDFN (6x8)

CY7C148-35PC

Cypress Semiconductor Corp

IC SRAM 4KBIT 35NS 18DIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Kb (1K x 4)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 18-DIP (0.300", 7.62mm)
Supplier Device Package: 18-DIP

패키지: 18-DIP (0.300", 7.62mm)

재고5,216

SRAM

SRAM - Asynchronous

4Kb (1K x 4)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

18-DIP (0.300", 7.62mm)

18-DIP

IDT71V3579S65PF

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 6.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 6.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고2,944

SRAM

SRAM - Synchronous

4.5Mb (256K x 18)

Parallel

-

6.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

IDT71P72604S167BQ8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 167MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 8.4ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

패키지: 165-TBGA

재고3,952

SRAM

SRAM - Synchronous, QDR II

18Mb (512K x 36)

Parallel

167MHz

-

8.4ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

70P3519S166BCG

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 166MHZ 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.6ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고3,216

SRAM

SRAM - Dual Port, Synchronous

9Mb (256K x 36)

Parallel

166MHz

-

3.6ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

X28HC64J-90

Intersil

IC EEPROM 64KBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 5ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC (11.43x13.97)

패키지: 32-LCC (J-Lead)

재고12,804

EEPROM

64Kb (8K x 8)

Parallel

-

5ms

90ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

32-LCC (J-Lead)

32-PLCC (11.43x13.97)

70V657S10BCG

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 10NS 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 1.125Mb (32K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고4,592

SRAM

SRAM - Dual Port, Asynchronous

1.125Mb (32K x 36)

Parallel

-

10ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

70V07L25JI

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 25NS 68PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)

패키지: 68-LCC (J-Lead)

재고6,832

SRAM

SRAM - Dual Port, Asynchronous

256Kb (32K x 8)

Parallel

-

25ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

68-LCC (J-Lead)

68-PLCC (24.21x24.21)

W631GU6KB15I TR

Winbond Electronics

IC SDRAM 1GBIT 667MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-WBGA (9x13)

패키지: 96-TFBGA

재고3,104

DRAM

SDRAM - DDR3L

1Gb (64M x 16)

Parallel

667MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-WBGA (9x13)

MT29F1G08ABBDAHC-IT:D

Micron Technology Inc.

IC FLASH 1GBIT 25NS 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (10.5x13)

패키지: 63-VFBGA

재고14,004

FLASH

FLASH - NAND

1Gb (128M x 8)

Parallel

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (10.5x13)

W956D6HBCX7I TR

Winbond Electronics

IC PSRAM 64MBIT 133MHZ 54VFBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 70ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (6x8)

패키지: 54-VFBGA

재고3,472

PSRAM

PSRAM (Pseudo SRAM)

64Mb (4M x 16)

Parallel

133MHz

-

70ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TC)

Surface Mount

54-VFBGA

54-VFBGA (6x8)

N64S830HAS22IT

ON Semiconductor

IC SRAM 64KBIT 20MHZ 8SOIC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 64Kb (8K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,176

SRAM

64Kb (8K x 8)

SPI

20MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

M24C32-DRDW8TP/K

STMicroelectronics

IC EEPROM 32KBIT 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 4ms
Access Time: 450ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고5,632

EEPROM

32Kb (4K x 8)

I2C

1MHz

4ms

450ns

1.8 V ~ 5.5 V

-40°C ~ 105°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MT47H256M4HQ-5E:E TR

Micron Technology Inc.

IC SDRAM 1GBIT 200MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (256M x 4)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 600ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-FBGA
Supplier Device Package: 60-FBGA (8x11.5)

패키지: 60-FBGA

재고3,824

DRAM

SDRAM - DDR2

1Gb (256M x 4)

Parallel

200MHz

15ns

600ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

60-FBGA

60-FBGA (8x11.5)

AT25DF021A-MAHNHR-T

Adesto Technologies

IC FLASH 2MBIT 104MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 12µs, 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

패키지: 8-UFDFN Exposed Pad

재고3,392

FLASH

2Mb (256K x 8)

SPI

85MHz

12µs, 5ms

-

1.7 V ~ 3.6 V

-40°C ~ 125°C (TC)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

24VL024H/P

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.5 V ~ 3.6 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고15,498

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

1.5 V ~ 3.6 V

-20°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

71V546S100PFG

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 100MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고7,504

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

100MHz

-

5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

MT25QL256ABA8ESF-MSIT TR

Micron Technology Inc.

IC FLASH 256M SPI 133MHZ 16SOP2

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2

패키지: 16-SOIC (0.295", 7.50mm Width)

재고6,992

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI

133MHz

8ms, 2.8ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP2

MT52L4DAPQ-DC TR

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR3

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,184

-

7015S17J8/E

IDT, Integrated Device Technology Inc

IC SRAM 72K PARALLEL 68PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 72Kb (8K x 9)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 17ns
Access Time: 17ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)

패키지: 68-LCC (J-Lead)

재고5,952

SRAM

SRAM - Dual Port, Asynchronous

72Kb (8K x 9)

Parallel

-

17ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

68-LCC (J-Lead)

68-PLCC (24.21x24.21)

S-93C66CD0H-A8T1U3

ABLIC Inc.

LINEAR IC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: Microwire
Clock Frequency: 2 MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 1.6V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead Exposed Pad
Supplier Device Package: HSNT-8-A

패키지: -

Request a Quote

EEPROM

4Kbit

Microwire

2 MHz

4ms

-

1.6V ~ 5.5V

-40°C ~ 105°C (TA)

Surface Mount

8-SMD, Flat Lead Exposed Pad

HSNT-8-A

5962-8700206ZA

Renesas Electronics Corporation

IC SRAM 16KBIT PARALLEL SB48

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 16Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-SIDE BRAZED

패키지: -

Request a Quote

SRAM

SRAM - Dual Port, Synchronous

16Kbit

Parallel

-

90ns

90 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-SIDE BRAZED

MT29F4T08EMLCHD4-QC-C

Micron Technology Inc.

TLC 4T 512GX8 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IS25LP016D-JMLE-TY

ISSI, Integrated Silicon Solution Inc

IC FLASH 16MBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 40µs, 800µs
Access Time: 7 ns
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: -

Request a Quote

FLASH

FLASH - NOR

16Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

40µs, 800µs

7 ns

2.3V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

GS81302Q37AGD-450I

GSI Technology Inc.

IC SRAM 144MBIT PAR 165FPBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous, QDR II+
Memory Size: 144Mbit
Memory Interface: Parallel
Clock Frequency: 450 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FPBGA (13x15)

패키지: -

Request a Quote

SRAM

SRAM - Quad Port, Synchronous, QDR II+

144Mbit

Parallel

450 MHz

-

1.7V ~ 1.9V

-40°C ~ 100°C (TJ)

Surface Mount

165-LBGA

165-FPBGA (13x15)

MT53E512M16D1FW-046-AIT-D

Micron Technology Inc.

LPDDR4 8G 512MX16 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

8Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 95°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)