페이지 392 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
R1LV0208BSA-5SI#S1	Renesas Electronics America	IC SRAM 2MBIT 55NS 32TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.465", 11.80mm Width) Supplier Device Package: 32-sTSOP	패키지: 32-TFSOP (0.465", 11.80mm Width)	재고2,272	SRAM	SRAM	2Mb (256K x 8)	Parallel	-	55ns	55ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.465", 11.80mm Width)	32-sTSOP
7052L25PQFI	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 25NS 132QFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 132-BQFP Bumpered Supplier Device Package: 132-PQFP (24.13x24.13)	패키지: 132-BQFP Bumpered	재고6,528	SRAM	SRAM - Quad Port, Asynchronous	16Kb (2K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	132-BQFP Bumpered	132-PQFP (24.13x24.13)
M50FW080N1	Micron Technology Inc.	IC FLASH 8MBIT 33MHZ 40TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: Parallel Clock Frequency: 33MHz Write Cycle Time - Word, Page: - Access Time: 250ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 40-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 40-TSOP (10x20)	패키지: 40-TFSOP (0.724", 18.40mm Width)	재고10,200	FLASH	FLASH - NOR	8Mb (1M x 8)	Parallel	33MHz	-	250ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	40-TFSOP (0.724", 18.40mm Width)	40-TSOP (10x20)
CY7C1356CV25-200AXCT	Cypress Semiconductor Corp	IC SRAM 9MBIT 200MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.2ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고4,848	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	200MHz	-	3.2ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
PSD813F2A-70M	STMicroelectronics	IC FLASH 1MBIT 70NS 52QFP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-QFP Supplier Device Package: 52-PQFP (10x10)	패키지: 52-QFP	재고18,000	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	-	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	52-QFP	52-PQFP (10x10)
70T3519S166BF	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 166MHZ 208CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.6ns Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: 208-CABGA (15x15)	패키지: 208-LFBGA	재고6,592	SRAM	SRAM - Dual Port, Synchronous	9Mb (256K x 36)	Parallel	166MHz	-	3.6ns	2.4 V ~ 2.6 V	0°C ~ 70°C (TA)	Surface Mount	208-LFBGA	208-CABGA (15x15)
MT29TZZZ5D6YKFAH-107 W.96N TR	Micron Technology Inc.	MLC EMMC/LPDDR3 144G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,216	-	-	-	-	-	-	-	-	-	-	-	-
IS42S32160F-6TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 167MHZ 86TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	패키지: 86-TFSOP (0.400", 10.16mm Width)	재고5,552	DRAM	SDRAM	512Mb (16M x 32)	Parallel	167MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
MT38M5071A3063RZZI.YE8 TR	Micron Technology Inc.	IC FLASH/PSRAM 1GBIT 133VFBGA Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH, PSRAM Memory Size: 512Mb (32M x 16), 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,488	FLASH, RAM	FLASH, PSRAM	512Mb (32M x 16), 512Mb (32M x 16)	Parallel	133MHz	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
M58LR256KB70ZC5F TR	Micron Technology Inc.	IC FLASH 256MBIT 70NS 79VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 66MHz Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -30°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 79-VFBGA Supplier Device Package: 79-VFBGA (9x11)	패키지: 79-VFBGA	재고2,528	FLASH	FLASH - NOR	256Mb (16M x 16)	Parallel	66MHz	70ns	70ns	1.7 V ~ 2 V	-30°C ~ 85°C (TA)	Surface Mount	79-VFBGA	79-VFBGA (9x11)
IS43TR16640A-15GBL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 667MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고5,552	DRAM	SDRAM - DDR3	1Gb (64M x 16)	Parallel	667MHz	15ns	20ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
PC28F128M29EWHF	Micron Technology Inc.	IC FLASH 128MBIT 60NS 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8, 8M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 60ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	패키지: 64-LBGA	재고4,864	FLASH	FLASH - NOR	128Mb (16M x 8, 8M x 16)	Parallel	-	60ns	60ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (11x13)
MX25L6408EMI-12G	Macronix	IC FLASH 64MBIT 86MHZ 16SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI Clock Frequency: 86MHz Write Cycle Time - Word, Page: 50µs, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP	패키지: 16-SOIC (0.295", 7.50mm Width)	재고3,712	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI	86MHz	50µs, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP
SST39SF020A-55-4I-WHE-T	Microchip Technology	IC FLASH 2MBIT 55NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20µs Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-TSOP	패키지: 32-TFSOP (0.488", 12.40mm Width)	재고4,176	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	20µs	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-TSOP
CY7C1460AV33-167AXI	Cypress Semiconductor Corp	IC SRAM 36MBIT 167MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고13,188	SRAM	SRAM - Synchronous	36Mb (1M x 36)	Parallel	167MHz	-	3.4ns	3.135 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
M24128-DFMN6TP	STMicroelectronics	IC EEPROM 128KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고22,344	EEPROM	EEPROM	128Kb (16K x 8)	I2C	1MHz	5ms	450ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MX68GA1G0FLXFI-11G	Macronix	IC FLASH 1GBIT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,512	-	-	-	-	-	-	-	-	-	-	-	-
S29CD032J0PFFM010	Cypress Semiconductor Corp	IC FLASH 32M PARALLEL 80FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (1M x 32) Memory Interface: Parallel Clock Frequency: 66MHz Write Cycle Time - Word, Page: 60ns Access Time: 54ns Voltage - Supply: 1.65 V ~ 2.75 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 80-LBGA Supplier Device Package: 80-FBGA (13x11)	패키지: 80-LBGA	재고6,384	FLASH	FLASH - NOR	32Mb (1M x 32)	Parallel	66MHz	60ns	54ns	1.65 V ~ 2.75 V	-40°C ~ 125°C (TA)	Surface Mount	80-LBGA	80-FBGA (13x11)
HM3-6508B-9	Harris Corporation	IC SRAM 1KBIT PARALLEL 16DIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 280ns Access Time: 180 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	1Kbit	Parallel	-	280ns	180 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
6116LA25TBD	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT PARALLEL 24CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 24-CDIP (0.300", 7.62mm) Supplier Device Package: 24-CDIP	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	16Kbit	Parallel	-	25ns	25 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Through Hole	24-CDIP (0.300", 7.62mm)	24-CDIP
CG7501AA	Infineon Technologies	IC SRAM NON VOLATILE 48FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
W631GG6NB12I-TR	Winbond Electronics	IC DRAM 1GBIT SSTL 15 96VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: SSTL_15 Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-VFBGA (7.5x13)	패키지: -	재고17,982	DRAM	SDRAM - DDR3	1Gbit	SSTL_15	800 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-VFBGA (7.5x13)
MT42L64M32D2HE-18-IT-D	Micron Technology Inc.	IC DRAM 2GBIT PARALLEL 134VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 533 MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14V ~ 1.3V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 134-VFBGA Supplier Device Package: 134-VFBGA (10x11.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2	2Gbit	Parallel	533 MHz	15ns	-	1.14V ~ 1.3V	-40°C ~ 85°C (TC)	Surface Mount	134-VFBGA	134-VFBGA (10x11.5)
W66BQ2NQQAGJ	Winbond Electronics	2GB LPDDR4X, DDP, X32, 1866MHZ, Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 2Gbit Memory Interface: LVSTL_06 Clock Frequency: 1.867 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.6 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	2Gbit	LVSTL_06	1.867 GHz	18ns	3.6 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
AT25SF321B-SHB-B	Renesas Electronics Corporation	IC FLASH 32MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 108 MHz Write Cycle Time - Word, Page: 50µs, 3ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	FLASH	FLASH - NOR	32Mbit	SPI - Quad I/O	108 MHz	50µs, 3ms	-	2.7V ~ 3.6V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
AS4C256M8D3LC-12BANTR	Alliance Memory, Inc.	MEMORY Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (7.5x10.5)	패키지: -	Request a Quote	DRAM	SDRAM - DDR3L	2Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 105°C (TC)	Surface Mount	78-VFBGA	78-FBGA (7.5x10.5)
AS4C32M16D1-5BANTR	Alliance Memory, Inc.	MEMORY Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mbit Memory Interface: SSTL_2 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 15ns Access Time: 700 ps Voltage - Supply: 2.3V ~ 2.7V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x13)	패키지: -	Request a Quote	DRAM	SDRAM - DDR	512Mbit	SSTL_2	200 MHz	15ns	700 ps	2.3V ~ 2.7V	-40°C ~ 105°C (TA)	Surface Mount	60-TFBGA	60-FBGA (8x13)
MT53E128M32D2FW-046-AAT-A	Micron Technology Inc.	LPDDR4 4G 128MX32 FBGA DDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	4Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 105°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)

R1LV0208BSA-5SI#S1

Renesas Electronics America

IC SRAM 2MBIT 55NS 32TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-sTSOP

패키지: 32-TFSOP (0.465", 11.80mm Width)

재고2,272

SRAM

2Mb (256K x 8)

Parallel

-

55ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.465", 11.80mm Width)

32-sTSOP

7052L25PQFI

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 25NS 132QFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 132-BQFP Bumpered
Supplier Device Package: 132-PQFP (24.13x24.13)

패키지: 132-BQFP Bumpered

재고6,528

SRAM

SRAM - Quad Port, Asynchronous

16Kb (2K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

132-BQFP Bumpered

132-PQFP (24.13x24.13)

M50FW080N1

Micron Technology Inc.

IC FLASH 8MBIT 33MHZ 40TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: Parallel
Clock Frequency: 33MHz
Write Cycle Time - Word, Page: -
Access Time: 250ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 40-TSOP (10x20)

패키지: 40-TFSOP (0.724", 18.40mm Width)

재고10,200

FLASH

FLASH - NOR

8Mb (1M x 8)

Parallel

33MHz

-

250ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

40-TFSOP (0.724", 18.40mm Width)

40-TSOP (10x20)

CY7C1356CV25-200AXCT

Cypress Semiconductor Corp

IC SRAM 9MBIT 200MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.2ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고4,848

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

200MHz

-

3.2ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

PSD813F2A-70M

STMicroelectronics

IC FLASH 1MBIT 70NS 52QFP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-QFP
Supplier Device Package: 52-PQFP (10x10)

패키지: 52-QFP

재고18,000

FLASH

1Mb (128K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

52-QFP

52-PQFP (10x10)

70T3519S166BF

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 166MHZ 208CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.6ns
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)

패키지: 208-LFBGA

재고6,592

SRAM

SRAM - Dual Port, Synchronous

9Mb (256K x 36)

Parallel

166MHz

-

3.6ns

2.4 V ~ 2.6 V

0°C ~ 70°C (TA)

Surface Mount

208-LFBGA

208-CABGA (15x15)

MT29TZZZ5D6YKFAH-107 W.96N TR

Micron Technology Inc.

MLC EMMC/LPDDR3 144G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,216

-

IS42S32160F-6TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 167MHZ 86TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

패키지: 86-TFSOP (0.400", 10.16mm Width)

재고5,552

DRAM

SDRAM

512Mb (16M x 32)

Parallel

167MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

MT38M5071A3063RZZI.YE8 TR

Micron Technology Inc.

IC FLASH/PSRAM 1GBIT 133VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH, PSRAM
Memory Size: 512Mb (32M x 16), 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,488

FLASH, RAM

FLASH, PSRAM

512Mb (32M x 16), 512Mb (32M x 16)

Parallel

133MHz

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

-

M58LR256KB70ZC5F TR

Micron Technology Inc.

IC FLASH 256MBIT 70NS 79VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 79-VFBGA
Supplier Device Package: 79-VFBGA (9x11)

패키지: 79-VFBGA

재고2,528

FLASH

FLASH - NOR

256Mb (16M x 16)

Parallel

66MHz

70ns

1.7 V ~ 2 V

-30°C ~ 85°C (TA)

Surface Mount

79-VFBGA

79-VFBGA (9x11)

IS43TR16640A-15GBL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 667MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고5,552

DRAM

SDRAM - DDR3

1Gb (64M x 16)

Parallel

667MHz

15ns

20ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

PC28F128M29EWHF

Micron Technology Inc.

IC FLASH 128MBIT 60NS 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8, 8M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 60ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)

패키지: 64-LBGA

재고4,864

FLASH

FLASH - NOR

128Mb (16M x 8, 8M x 16)

Parallel

-

60ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (11x13)

MX25L6408EMI-12G

Macronix

IC FLASH 64MBIT 86MHZ 16SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI
Clock Frequency: 86MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP

패키지: 16-SOIC (0.295", 7.50mm Width)

재고3,712

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI

86MHz

50µs, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP

SST39SF020A-55-4I-WHE-T

Microchip Technology

IC FLASH 2MBIT 55NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20µs
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-TSOP

패키지: 32-TFSOP (0.488", 12.40mm Width)

재고4,176

FLASH

2Mb (256K x 8)

Parallel

-

20µs

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-TSOP

CY7C1460AV33-167AXI

Cypress Semiconductor Corp

IC SRAM 36MBIT 167MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고13,188

SRAM

SRAM - Synchronous

36Mb (1M x 36)

Parallel

167MHz

-

3.4ns

3.135 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

M24128-DFMN6TP

STMicroelectronics

IC EEPROM 128KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고22,344

EEPROM

128Kb (16K x 8)

I2C

1MHz

5ms

450ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MX68GA1G0FLXFI-11G

Macronix

IC FLASH 1GBIT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,512

-

S29CD032J0PFFM010

Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 80FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (1M x 32)
Memory Interface: Parallel
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 54ns
Voltage - Supply: 1.65 V ~ 2.75 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LBGA
Supplier Device Package: 80-FBGA (13x11)

패키지: 80-LBGA

재고6,384

FLASH

FLASH - NOR

32Mb (1M x 32)

Parallel

66MHz

60ns

54ns

1.65 V ~ 2.75 V

-40°C ~ 125°C (TA)

Surface Mount

80-LBGA

80-FBGA (13x11)

HM3-6508B-9

Harris Corporation

IC SRAM 1KBIT PARALLEL 16DIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 280ns
Access Time: 180 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

1Kbit

Parallel

-

280ns

180 ns

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

6116LA25TBD

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT PARALLEL 24CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 24-CDIP (0.300", 7.62mm)
Supplier Device Package: 24-CDIP

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

16Kbit

Parallel

-

25ns

25 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TA)

Through Hole

24-CDIP (0.300", 7.62mm)

24-CDIP

CG7501AA

Infineon Technologies

IC SRAM NON VOLATILE 48FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

W631GG6NB12I-TR

Winbond Electronics

IC DRAM 1GBIT SSTL 15 96VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: SSTL_15
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-VFBGA (7.5x13)

패키지: -

재고17,982

DRAM

SDRAM - DDR3

1Gbit

SSTL_15

800 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-VFBGA (7.5x13)

MT42L64M32D2HE-18-IT-D

Micron Technology Inc.

IC DRAM 2GBIT PARALLEL 134VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14V ~ 1.3V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-VFBGA
Supplier Device Package: 134-VFBGA (10x11.5)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR2

2Gbit

Parallel

533 MHz

15ns

-

1.14V ~ 1.3V

-40°C ~ 85°C (TC)

Surface Mount

134-VFBGA

134-VFBGA (10x11.5)

W66BQ2NQQAGJ

Winbond Electronics

2GB LPDDR4X, DDP, X32, 1866MHZ,

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 2Gbit
Memory Interface: LVSTL_06
Clock Frequency: 1.867 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.6 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

2Gbit

LVSTL_06

1.867 GHz

18ns

3.6 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

AT25SF321B-SHB-B

Renesas Electronics Corporation

IC FLASH 32MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

FLASH

FLASH - NOR

32Mbit

SPI - Quad I/O

108 MHz

50µs, 3ms

-

2.7V ~ 3.6V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

AS4C256M8D3LC-12BANTR

Alliance Memory, Inc.

MEMORY

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (7.5x10.5)

패키지: -

Request a Quote

DRAM

SDRAM - DDR3L

2Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 105°C (TC)

Surface Mount

78-VFBGA

78-FBGA (7.5x10.5)

AS4C32M16D1-5BANTR

Alliance Memory, Inc.

MEMORY

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mbit
Memory Interface: SSTL_2
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700 ps
Voltage - Supply: 2.3V ~ 2.7V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x13)

패키지: -

Request a Quote

DRAM

SDRAM - DDR

512Mbit

SSTL_2

200 MHz

15ns

700 ps

2.3V ~ 2.7V

-40°C ~ 105°C (TA)

Surface Mount

60-TFBGA

60-FBGA (8x13)

MT53E128M32D2FW-046-AAT-A

Micron Technology Inc.

LPDDR4 4G 128MX32 FBGA DDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

4Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 105°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)