페이지 396 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
R1EX24008ATAS0I#S0	Renesas Electronics America	IC EEPROM 8KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고6,112	EEPROM	EEPROM	8Kb (1K x 8)	I2C	400kHz	5ms	900ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY7C1041CV33-12ZSXE	Cypress Semiconductor Corp	IC SRAM 4MBIT 12NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고18,948	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS61LV12816L-10BI	ISSI, Integrated Silicon Solution Inc	IC SRAM 2MBIT 10NS 48MINIBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-miniBGA (6x8)	패키지: 48-TFBGA	재고152,244	SRAM	SRAM - Asynchronous	2Mb (128K x 16)	Parallel	-	10ns	10ns	3.135 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-miniBGA (6x8)
CY7C1041DV33-10BVXIT	Cypress Semiconductor Corp	IC SRAM 4MBIT 10NS 48VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	패키지: 48-VFBGA	재고5,664	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
MT45W1MW16PABA-70 WT TR	Micron Technology Inc.	IC PSRAM 16MBIT 70NS 48VFBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	패키지: 48-VFBGA	재고5,120	PSRAM	PSRAM (Pseudo SRAM)	16Mb (1M x 16)	Parallel	-	70ns	70ns	1.7 V ~ 1.95 V	-30°C ~ 85°C (TC)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
AT45DB011-SI	Microchip Technology	IC FLASH 1MBIT 13MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (264 Bytes x 512 pages) Memory Interface: SPI Clock Frequency: 15MHz Write Cycle Time - Word, Page: 15ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.209", 5.30mm Width)	재고4,512	FLASH	FLASH	1Mb (264 Bytes x 512 pages)	SPI	15MHz	15ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
AT27C256R-55PC	Microchip Technology	IC OTP 256KBIT 55NS 28DIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP	패키지: 28-DIP (0.600", 15.24mm)	재고5,088	EPROM	EPROM - OTP	256Kb (32K x 8)	Parallel	-	-	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Through Hole	28-DIP (0.600", 15.24mm)	28-PDIP
IS45S16800F-7CTLA1	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고4,096	DRAM	SDRAM	128Mb (8M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
MT29F1G16ABBEAH4-IT:E TR	Micron Technology Inc.	IC FLASH 1GBIT 25NS 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA	패키지: 63-VFBGA	재고5,600	FLASH	FLASH - NAND	1Gb (64M x 16)	Parallel	-	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA
24LC014-I/MC	Microchip Technology	IC EEPROM 1KBIT 400KHZ 8DFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Supplier Device Package: 8-DFN (2x3)	패키지: 8-VFDFN Exposed Pad	재고5,264	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-VFDFN Exposed Pad	8-DFN (2x3)
M24256-DRMN8TP/K	STMicroelectronics	IC EEPROM 256KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,392	EEPROM	EEPROM	256Kb (32K x 8)	I2C	1MHz	5ms	450ns	1.8 V ~ 5.5 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
M24C32-FMC6TG	STMicroelectronics	IC EEPROM 32KBIT 400KHZ 8MLP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UFDFPN (2x3)	패키지: 8-UFDFN Exposed Pad	재고180,768	EEPROM	EEPROM	32Kb (4K x 8)	I2C	1MHz	5ms	450ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UFDFPN (2x3)
S29PL064J70BFI120A	Cypress Semiconductor Corp	IC FLASH MEM NOR 48FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64M (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-FBGA (8.15x6.15)	패키지: 48-VFBGA	재고5,184	FLASH	FLASH - NOR	64M (4M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	48-VFBGA	48-FBGA (8.15x6.15)
MTFC8GAMALBH-AIT ES TR	Micron Technology Inc.	IC FLASH 64G MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,824	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	-	-40°C ~ 85°C (TA)	-	-	-
MT53D1G32D4NQ-046 WT ES:E TR	Micron Technology Inc.	LPDDR4 32G 512MX64 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,696	-	-	-	-	-	-	-	-	-	-	-	-
MT29F1T08EMCAGJ4-5M:A	Micron Technology Inc.	TLC 1T 128GX8 VBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,408	-	-	-	-	-	-	-	-	-	-	-	-
IS25LP256D-RHLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 256M SPI 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	패키지: 24-TBGA	재고17,538	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
MX25UM51245GXDI00	Macronix	S-NOR 512M Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: SPI - Quad I/O, DTR Clock Frequency: 200MHz Write Cycle Time - Word, Page: 60µs, 750µs Access Time: - Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	패키지: 24-TBGA	재고16,656	FLASH	FLASH - NOR	512Mb (64M x 8)	SPI - Quad I/O, DTR	200MHz	60µs, 750µs	-	1.65V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
AT25080B-MAPDGV-E	Microchip Technology	5MHZ AUTO GRADE1 8-UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 5MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	패키지: 8-UFDFN Exposed Pad	재고6,144	EEPROM	EEPROM	8Kb (1K x 8)	SPI	5MHz	5ms	-	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
EM032LXQADG13ES1R	Everspin Technologies Inc.	MRAM Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 32Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: 7 ns Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (6x8)	패키지: -	Request a Quote	RAM	MRAM (Magnetoresistive RAM)	32Mbit	SPI - Octal I/O	200 MHz	-	7 ns	1.65V ~ 2V	-40°C ~ 105°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-DFN (6x8)
BY25Q40BSMIG-R	BYTe Semiconductor	4 MBIT, 3.0V (2.7V TO 3.6V), -40 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 4Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108 MHz Write Cycle Time - Word, Page: 50µs, 2.4ms Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-USON (2x3)	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	4Mbit	SPI - Quad I/O, QPI	108 MHz	50µs, 2.4ms	7 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-USON (2x3)
IS64LF25636B-7-5B3LA3-TR	ISSI, Integrated Silicon Solution Inc	9Mb,Flowthrough,Sync,256K x 36,1 Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 9Mbit Memory Interface: Parallel Clock Frequency: 117 MHz Write Cycle Time - Word, Page: - Access Time: 7.5 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	패키지: -	Request a Quote	SRAM	SRAM - Standard	9Mbit	Parallel	117 MHz	-	7.5 ns	3.135V ~ 3.465V	-40°C ~ 125°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
MT53E2G64D8EG-046-WT-A	Micron Technology Inc.	DRAM LPDDR4 128G 2GX64 FBGA 8DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F4G32D8DV-023-AIT-C	Micron Technology Inc.	LPDDR5 128GBIT 32 315/315 LFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FM1608B-PG	Infineon Technologies	IC FRAM 64KBIT 70NS 28DIP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 64Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 130ns Access Time: - Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-DIP	패키지: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	64Kbit	Parallel	-	130ns	-	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole	28-DIP (0.600", 15.24mm)	28-DIP
CY7C1019CV33-12BVI	Cypress Semiconductor Corp	IC SRAM 1MBIT PARALLEL 48VFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-VFBGA (6x8)	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	1Mbit	Parallel	-	12ns	12 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-VFBGA (6x8)
BY25D40ASTIG-T	BYTe Semiconductor	4 MBIT, 3.0V (2.7V TO 3.6V), -40 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 4Mbit Memory Interface: SPI - Dual I/O Clock Frequency: 108 MHz Write Cycle Time - Word, Page: 2.4ms Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	4Mbit	SPI - Dual I/O	108 MHz	2.4ms	7 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
NDS38PT5-20ET-TR	Insignis Technology Corporation	SDR 256MB X8 TSOPII 54L 10X22(X1 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mbit Memory Interface: LVTTL Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: -	Request a Quote	DRAM	SDRAM	256Mbit	LVTTL	200 MHz	-	-	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II

R1EX24008ATAS0I#S0

Renesas Electronics America

IC EEPROM 8KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고6,112

EEPROM

8Kb (1K x 8)

I2C

400kHz

5ms

900ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY7C1041CV33-12ZSXE

Cypress Semiconductor Corp

IC SRAM 4MBIT 12NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고18,948

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS61LV12816L-10BI

ISSI, Integrated Silicon Solution Inc

IC SRAM 2MBIT 10NS 48MINIBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-miniBGA (6x8)

패키지: 48-TFBGA

재고152,244

SRAM

SRAM - Asynchronous

2Mb (128K x 16)

Parallel

-

10ns

3.135 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-miniBGA (6x8)

CY7C1041DV33-10BVXIT

Cypress Semiconductor Corp

IC SRAM 4MBIT 10NS 48VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

패키지: 48-VFBGA

재고5,664

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

MT45W1MW16PABA-70 WT TR

Micron Technology Inc.

IC PSRAM 16MBIT 70NS 48VFBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

패키지: 48-VFBGA

재고5,120

PSRAM

PSRAM (Pseudo SRAM)

16Mb (1M x 16)

Parallel

-

70ns

1.7 V ~ 1.95 V

-30°C ~ 85°C (TC)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

AT45DB011-SI

Microchip Technology

IC FLASH 1MBIT 13MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (264 Bytes x 512 pages)
Memory Interface: SPI
Clock Frequency: 15MHz
Write Cycle Time - Word, Page: 15ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.209", 5.30mm Width)

재고4,512

FLASH

1Mb (264 Bytes x 512 pages)

SPI

15MHz

15ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

AT27C256R-55PC

Microchip Technology

IC OTP 256KBIT 55NS 28DIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP

패키지: 28-DIP (0.600", 15.24mm)

재고5,088

EPROM

EPROM - OTP

256Kb (32K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Through Hole

28-DIP (0.600", 15.24mm)

28-PDIP

IS45S16800F-7CTLA1

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고4,096

DRAM

SDRAM

128Mb (8M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

MT29F1G16ABBEAH4-IT:E TR

Micron Technology Inc.

IC FLASH 1GBIT 25NS 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA

패키지: 63-VFBGA

재고5,600

FLASH

FLASH - NAND

1Gb (64M x 16)

Parallel

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

24LC014-I/MC

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8DFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Supplier Device Package: 8-DFN (2x3)

패키지: 8-VFDFN Exposed Pad

재고5,264

EEPROM

1Kb (128 x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-VFDFN Exposed Pad

8-DFN (2x3)

M24256-DRMN8TP/K

STMicroelectronics

IC EEPROM 256KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,392

EEPROM

256Kb (32K x 8)

I2C

1MHz

5ms

450ns

1.8 V ~ 5.5 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

M24C32-FMC6TG

STMicroelectronics

IC EEPROM 32KBIT 400KHZ 8MLP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UFDFPN (2x3)

패키지: 8-UFDFN Exposed Pad

재고180,768

EEPROM

32Kb (4K x 8)

I2C

1MHz

5ms

450ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UFDFPN (2x3)

S29PL064J70BFI120A

Cypress Semiconductor Corp

IC FLASH MEM NOR 48FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64M (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)

패키지: 48-VFBGA

재고5,184

FLASH

FLASH - NOR

64M (4M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

48-VFBGA

48-FBGA (8.15x6.15)

MTFC8GAMALBH-AIT ES TR

Micron Technology Inc.

IC FLASH 64G MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,824

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

-40°C ~ 85°C (TA)

-

MT53D1G32D4NQ-046 WT ES:E TR

Micron Technology Inc.

LPDDR4 32G 512MX64 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,696

-

MT29F1T08EMCAGJ4-5M:A

Micron Technology Inc.

TLC 1T 128GX8 VBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,408

-

IS25LP256D-RHLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 256M SPI 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

패키지: 24-TBGA

재고17,538

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

MX25UM51245GXDI00

Macronix

S-NOR 512M

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: SPI - Quad I/O, DTR
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 60µs, 750µs
Access Time: -
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

패키지: 24-TBGA

재고16,656

FLASH

FLASH - NOR

512Mb (64M x 8)

SPI - Quad I/O, DTR

200MHz

60µs, 750µs

-

1.65V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

AT25080B-MAPDGV-E

Microchip Technology

5MHZ AUTO GRADE1 8-UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

패키지: 8-UFDFN Exposed Pad

재고6,144

EEPROM

8Kb (1K x 8)

SPI

5MHz

5ms

-

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

EM032LXQADG13ES1R

Everspin Technologies Inc.

MRAM

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 32Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: 7 ns
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (6x8)

패키지: -

Request a Quote

RAM

MRAM (Magnetoresistive RAM)

32Mbit

SPI - Octal I/O

200 MHz

-

7 ns

1.65V ~ 2V

-40°C ~ 105°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-DFN (6x8)

BY25Q40BSMIG-R

BYTe Semiconductor

4 MBIT, 3.0V (2.7V TO 3.6V), -40

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 4Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: 50µs, 2.4ms
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

4Mbit

SPI - Quad I/O, QPI

108 MHz

50µs, 2.4ms

7 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-USON (2x3)

IS64LF25636B-7-5B3LA3-TR

ISSI, Integrated Silicon Solution Inc

9Mb,Flowthrough,Sync,256K x 36,1

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 9Mbit
Memory Interface: Parallel
Clock Frequency: 117 MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

패키지: -

Request a Quote

SRAM

SRAM - Standard

9Mbit

Parallel

117 MHz

-

7.5 ns

3.135V ~ 3.465V

-40°C ~ 125°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

MT53E2G64D8EG-046-WT-A

Micron Technology Inc.

DRAM LPDDR4 128G 2GX64 FBGA 8DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT62F4G32D8DV-023-AIT-C

Micron Technology Inc.

LPDDR5 128GBIT 32 315/315 LFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

FM1608B-PG

Infineon Technologies

IC FRAM 64KBIT 70NS 28DIP

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 64Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 130ns
Access Time: -
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-DIP

패키지: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

64Kbit

Parallel

-

130ns

-

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Through Hole

28-DIP (0.600", 15.24mm)

28-DIP

CY7C1019CV33-12BVI

Cypress Semiconductor Corp

IC SRAM 1MBIT PARALLEL 48VFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-VFBGA (6x8)

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

1Mbit

Parallel

-

12ns

12 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-VFBGA (6x8)

BY25D40ASTIG-T

BYTe Semiconductor

4 MBIT, 3.0V (2.7V TO 3.6V), -40

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 4Mbit
Memory Interface: SPI - Dual I/O
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: 2.4ms
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

4Mbit

SPI - Dual I/O

108 MHz

2.4ms

7 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

NDS38PT5-20ET-TR

Insignis Technology Corporation

SDR 256MB X8 TSOPII 54L 10X22(X1

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mbit
Memory Interface: LVTTL
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: -

Request a Quote

DRAM

SDRAM

256Mbit

LVTTL

200 MHz

-

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II