페이지 417 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS46LD32320A-3BLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 333MHZ 134TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 134-TFBGA Supplier Device Package: 134-TFBGA (10x11.5)	패키지: 134-TFBGA	재고4,512	DRAM	SDRAM - Mobile LPDDR2-S4	1Gb (32M x 32)	Parallel	333MHz	15ns	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	Surface Mount	134-TFBGA	134-TFBGA (10x11.5)
MT29RZ4B4DZZNGPL-18WE.4U2	Micron Technology Inc.	IC FLASH 8G DDR2 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,232	-	-	-	-	-	-	-	-	-	-	-	-
AT24C02BN-SH-T	Microchip Technology	IC EEPROM 2KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고18,480	EEPROM	EEPROM	2Kb (256 x 8)	I2C	1MHz	5ms	550ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT25160A-10PI-2.7	Microchip Technology	IC EEPROM 16KBIT 20MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고6,864	EEPROM	EEPROM	16Kb (2K x 8)	SPI	20MHz	5ms	-	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
AT49F002-12PI	Microchip Technology	IC FLASH 2MBIT 120NS 32DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-DIP	패키지: 32-DIP (0.600", 15.24mm)	재고6,640	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	32-DIP (0.600", 15.24mm)	32-DIP
7052S25G	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 25NS 108PGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 108-BPGA Supplier Device Package: 108-PGA (30.48x30.48)	패키지: 108-BPGA	재고5,856	SRAM	SRAM - Quad Port, Asynchronous	16Kb (2K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	108-BPGA	108-PGA (30.48x30.48)
709369L12PF8	IDT, Integrated Device Technology Inc	IC SRAM 288KBIT 12NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 288Kb (16K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 12ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고7,520	SRAM	SRAM - Dual Port, Synchronous	288Kb (16K x 18)	Parallel	-	-	12ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IS61LPD51236A-200TQI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 18MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고7,216	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
71V67602S150PFGI8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 150MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고2,432	SRAM	SRAM - Synchronous	9Mb (256K x 36)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
7133SA35PF8	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 35NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (2K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고7,184	SRAM	SRAM - Dual Port, Asynchronous	32Kb (2K x 16)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MT29F8G16ABACAH4:C TR	Micron Technology Inc.	IC FLASH 8GBIT 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: 63-VFBGA	재고3,552	FLASH	FLASH - NAND	8Gb (512M x 16)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
24AA16T-E/ST	Microchip Technology	IC EEPROM 16KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고4,976	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CAT25040HU4I-GT3	ON Semiconductor	IC EEPROM 4KBIT 10MHZ 8UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN-EP (2x3)	패키지: 8-UFDFN Exposed Pad	재고3,008	EEPROM	EEPROM	4Kb (512 x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN-EP (2x3)
AT25320B-SSHL-B	Microchip Technology	IC EEPROM 32KBIT 20MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고13,416	EEPROM	EEPROM	32Kb (4K x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
93C46AT-I/OT	Microchip Technology	IC EEPROM 1KBIT 2MHZ SOT23-6 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: SOT-23-6	패키지: SOT-23-6	재고2,144	EEPROM	EEPROM	1Kb (128 x 8)	SPI	2MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	SOT-23-6	SOT-23-6
RM24C64C-BTAC-B	Adesto Technologies	IC EEPROM 64KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: CBRAM? Technology: CBRAM Memory Size: 64kb (32B Page Size) Memory Interface: I2C Clock Frequency: 750kHz Write Cycle Time - Word, Page: 100µs, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고88,392	CBRAM?	CBRAM	64kb (32B Page Size)	I2C	750kHz	100µs, 5ms	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
S25FS128SAGBHI200	Cypress Semiconductor Corp	IC FLASH 128M SPI 133MHZ 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	패키지: 24-TBGA	재고7,380	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O	133MHz	-	-	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-BGA (8x6)
S29GL256P11FFIV23	Cypress Semiconductor Corp	IC FLASH 256M PARALLEL 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	패키지: 64-LBGA	재고6,208	FLASH	FLASH - NOR	256Mb (32M x 8)	Parallel	-	110ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
S25FS128SDSBHB200	Cypress Semiconductor Corp	IC 128 MB FLASH MEMORY Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	패키지: 24-TBGA	재고6,672	-	-	-	-	-	-	-	-	-	Surface Mount	24-TBGA	24-BGA (8x6)
W25Q32FVSSJF	Winbond Electronics	IC FLASH MEMORY 32MB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,344	-	-	-	-	-	-	-	-	-	-	-	-
MT29TZZZ5D6EKFRL-107 W.96R	Micron Technology Inc.	MLC EMMC/LPDDR3 144G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,128	-	-	-	-	-	-	-	-	-	-	-	-
DS28E02P-W10-2T	Analog Devices Inc./Maxim Integrated	IC EEPROM 1KBIT 1-WIRE 6TSOC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kbit Memory Interface: 1-Wire® Clock Frequency: - Write Cycle Time - Word, Page: 25ms Access Time: 2 µs Voltage - Supply: 1.75V ~ 3.65V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-SMD, J-Lead Supplier Device Package: 6-TSOC	패키지: -	Request a Quote	EEPROM	EEPROM	1Kbit	1-Wire®	-	25ms	2 µs	1.75V ~ 3.65V	-20°C ~ 85°C (TA)	Surface Mount	6-SMD, J-Lead	6-TSOC
MT29F4G08ABAFAWP-IT-F	Micron Technology Inc.	IC FLASH 4GBIT PARALLEL 48TSOP I Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: -	재고1,671	FLASH	FLASH - NAND (SLC)	4Gbit	Parallel	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
SM662PXA-BDAS	Silicon Motion, Inc.	IC FLASH 40GBIT EMMC 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 40Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-BGA (11.5x13)	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	40Gbit	eMMC	-	-	-	-	-25°C ~ 85°C	Surface Mount	153-TFBGA	153-BGA (11.5x13)
MTFC8GAMALHT-AIT	Micron Technology Inc.	IC FLASH 64GBIT MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gbit Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	FLASH	FLASH - NAND	64Gbit	MMC	-	-	-	-	-40°C ~ 85°C (TA)	-	-	-
W25Q20RLSNJQ	Winbond Electronics	SPIFLASH, 2M-BIT, 4KB UNIFORM SE Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
W25Q128BVESG	Winbond Electronics	IC FLASH 128MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 50µs, 3ms Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	패키지: -	Request a Quote	FLASH	FLASH - NOR	128Mbit	SPI - Quad I/O	104 MHz	50µs, 3ms	7 ns	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
CY7C1298F-133AC	Cypress Semiconductor Corp	STANDARD SRAM, 64KX18, 4NS, CMOS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

IS46LD32320A-3BLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 134TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 134-TFBGA
Supplier Device Package: 134-TFBGA (10x11.5)

패키지: 134-TFBGA

재고4,512

DRAM

SDRAM - Mobile LPDDR2-S4

1Gb (32M x 32)

Parallel

333MHz

15ns

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

Surface Mount

134-TFBGA

134-TFBGA (10x11.5)

MT29RZ4B4DZZNGPL-18WE.4U2

Micron Technology Inc.

IC FLASH 8G DDR2

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,232

-

AT24C02BN-SH-T

Microchip Technology

IC EEPROM 2KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고18,480

EEPROM

2Kb (256 x 8)

I2C

1MHz

5ms

550ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT25160A-10PI-2.7

Microchip Technology

IC EEPROM 16KBIT 20MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고6,864

EEPROM

16Kb (2K x 8)

SPI

20MHz

5ms

-

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

AT49F002-12PI

Microchip Technology

IC FLASH 2MBIT 120NS 32DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP

패키지: 32-DIP (0.600", 15.24mm)

재고6,640

FLASH

2Mb (256K x 8)

Parallel

-

50µs

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

32-DIP (0.600", 15.24mm)

32-DIP

7052S25G

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 25NS 108PGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 108-BPGA
Supplier Device Package: 108-PGA (30.48x30.48)

패키지: 108-BPGA

재고5,856

SRAM

SRAM - Quad Port, Asynchronous

16Kb (2K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

108-BPGA

108-PGA (30.48x30.48)

709369L12PF8

IDT, Integrated Device Technology Inc

IC SRAM 288KBIT 12NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 288Kb (16K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 12ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고7,520

SRAM

SRAM - Dual Port, Synchronous

288Kb (16K x 18)

Parallel

-

12ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IS61LPD51236A-200TQI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고7,216

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

71V67602S150PFGI8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고2,432

SRAM

SRAM - Synchronous

9Mb (256K x 36)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

7133SA35PF8

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 35NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (2K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고7,184

SRAM

SRAM - Dual Port, Asynchronous

32Kb (2K x 16)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MT29F8G16ABACAH4:C TR

Micron Technology Inc.

IC FLASH 8GBIT 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: 63-VFBGA

재고3,552

FLASH

FLASH - NAND

8Gb (512M x 16)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

24AA16T-E/ST

Microchip Technology

IC EEPROM 16KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고4,976

EEPROM

16Kb (2K x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CAT25040HU4I-GT3

ON Semiconductor

IC EEPROM 4KBIT 10MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN-EP (2x3)

패키지: 8-UFDFN Exposed Pad

재고3,008

EEPROM

4Kb (512 x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN-EP (2x3)

AT25320B-SSHL-B

Microchip Technology

IC EEPROM 32KBIT 20MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고13,416

EEPROM

32Kb (4K x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

93C46AT-I/OT

Microchip Technology

IC EEPROM 1KBIT 2MHZ SOT23-6

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6

패키지: SOT-23-6

재고2,144

EEPROM

1Kb (128 x 8)

SPI

2MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

SOT-23-6

RM24C64C-BTAC-B

Adesto Technologies

IC EEPROM 64KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: CBRAM?
Technology: CBRAM
Memory Size: 64kb (32B Page Size)
Memory Interface: I2C
Clock Frequency: 750kHz
Write Cycle Time - Word, Page: 100µs, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고88,392

CBRAM?

CBRAM

64kb (32B Page Size)

I2C

750kHz

100µs, 5ms

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

S25FS128SAGBHI200

Cypress Semiconductor Corp

IC FLASH 128M SPI 133MHZ 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

패키지: 24-TBGA

재고7,380

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O

133MHz

-

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-BGA (8x6)

S29GL256P11FFIV23

Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

패키지: 64-LBGA

재고6,208

FLASH

FLASH - NOR

256Mb (32M x 8)

Parallel

-

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

S25FS128SDSBHB200

Cypress Semiconductor Corp

IC 128 MB FLASH MEMORY

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

패키지: 24-TBGA

재고6,672

-

Surface Mount

24-TBGA

24-BGA (8x6)

W25Q32FVSSJF

Winbond Electronics

IC FLASH MEMORY 32MB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,344

-

MT29TZZZ5D6EKFRL-107 W.96R

Micron Technology Inc.

MLC EMMC/LPDDR3 144G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,128

-

DS28E02P-W10-2T

Analog Devices Inc./Maxim Integrated

IC EEPROM 1KBIT 1-WIRE 6TSOC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kbit
Memory Interface: 1-Wire®
Clock Frequency: -
Write Cycle Time - Word, Page: 25ms
Access Time: 2 µs
Voltage - Supply: 1.75V ~ 3.65V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-SMD, J-Lead
Supplier Device Package: 6-TSOC

패키지: -

Request a Quote

EEPROM

1Kbit

1-Wire®

-

25ms

2 µs

1.75V ~ 3.65V

-20°C ~ 85°C (TA)

Surface Mount

6-SMD, J-Lead

6-TSOC

MT29F4G08ABAFAWP-IT-F

Micron Technology Inc.

IC FLASH 4GBIT PARALLEL 48TSOP I

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: -

재고1,671

FLASH

FLASH - NAND (SLC)

4Gbit

Parallel

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

SM662PXA-BDAS

Silicon Motion, Inc.

IC FLASH 40GBIT EMMC 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 40Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-BGA (11.5x13)

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

40Gbit

eMMC

-

-25°C ~ 85°C

Surface Mount

153-TFBGA

153-BGA (11.5x13)

MTFC8GAMALHT-AIT

Micron Technology Inc.

IC FLASH 64GBIT MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gbit
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

FLASH

FLASH - NAND

64Gbit

MMC

-

-40°C ~ 85°C (TA)

-

W25Q20RLSNJQ

Winbond Electronics

SPIFLASH, 2M-BIT, 4KB UNIFORM SE

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

W25Q128BVESG

Winbond Electronics

IC FLASH 128MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

패키지: -

Request a Quote

FLASH

FLASH - NOR

128Mbit

SPI - Quad I/O

104 MHz

50µs, 3ms

7 ns

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

CY7C1298F-133AC

Cypress Semiconductor Corp

STANDARD SRAM, 64KX18, 4NS, CMOS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-