페이지 469 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
M25P10-AVMB3TP/Y TR	Micron Technology Inc.	IC FLASH 1MBIT 50MHZ 8UFDFPN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 50MHz Write Cycle Time - Word, Page: 15ms, 5ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UFDFPN (2x3)	패키지: 8-UFDFN Exposed Pad	재고7,248	FLASH	FLASH - NOR	1Mb (128K x 8)	SPI	50MHz	15ms, 5ms	-	2.3 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UFDFPN (2x3)
MT29FEN64GDKCAAXDQ-10:A TR	Micron Technology Inc.	IC MEMORY Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,616	-	-	-	-	-	-	-	-	-	-	-	-
CY7C1315TV18-200BZC	Cypress Semiconductor Corp	IC SRAM 18MBIT 200MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고4,256	SRAM	SRAM - Synchronous, QDR II	18Mb (512K x 36)	Parallel	200MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
DS1258W-100IND#	Maxim Integrated	IC NVSRAM 2MBIT 100NS 40EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 40-DIP Module (0.610", 15.495mm) Supplier Device Package: 40-EDIP	패키지: 40-DIP Module (0.610", 15.495mm)	재고3,296	NVSRAM	NVSRAM (Non-Volatile SRAM)	2Mb (128K x 16)	Parallel	-	100ns	100ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Through Hole	40-DIP Module (0.610", 15.495mm)	40-EDIP
CY7C1021B-15ZXI	Cypress Semiconductor Corp	IC SRAM 1MBIT 15NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고5,376	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
7005L20GB	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 20NS 68PGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 68-BPGA Supplier Device Package: 68-PGA (29.46x29.46)	패키지: 68-BPGA	재고6,416	SRAM	SRAM - Dual Port, Asynchronous	64Kb (8K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	68-BPGA	68-PGA (29.46x29.46)
7132SA55L48B	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 55NS 48LCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-LCC Supplier Device Package: 48-LCC (14.22x14.22)	패키지: 48-LCC	재고7,888	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Surface Mount	48-LCC	48-LCC (14.22x14.22)
70V3569S4BFG8	IDT, Integrated Device Technology Inc	IC SRAM 576KBIT 4.2NS 208CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 576Kb (16K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: 208-CABGA (15x15)	패키지: 208-LFBGA	재고4,400	SRAM	SRAM - Dual Port, Synchronous	576Kb (16K x 36)	Parallel	-	-	4.2ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	208-LFBGA	208-CABGA (15x15)
CY7C1069GN30-10ZSXIT	Cypress Semiconductor Corp	ASYNC SRAMS Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (2M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,464	SRAM	SRAM - Asynchronous	16Mb (2M x 8)	Parallel	-	10ns	10ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
70V07L25JI8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 25NS 68PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 68-LCC (J-Lead) Supplier Device Package: 68-PLCC (24.21x24.21)	패키지: 68-LCC (J-Lead)	재고5,184	SRAM	SRAM - Dual Port, Asynchronous	256Kb (32K x 8)	Parallel	-	25ns	25ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	68-LCC (J-Lead)	68-PLCC (24.21x24.21)
IS42S81600F-7TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 128MBIT 143MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (16M x 8) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고6,016	DRAM	SDRAM	128Mb (16M x 8)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
24AA256-E/ST	Microchip Technology	IC EEPROM 256KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고6,848	EEPROM	EEPROM	256Kb (32K x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
S25FS256SAGNFI000	Cypress Semiconductor Corp	IC FLASH 256MBIT 133MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	패키지: 8-WDFN Exposed Pad	재고4,432	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O, QPI	133MHz	-	-	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
25LC040A-I/SN	Microchip Technology	IC EEPROM 4KBIT 10MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고244,500	EEPROM	EEPROM	4Kb (512 x 8)	SPI	10MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
FM24V10-GTR	Cypress Semiconductor Corp	IC FRAM 1MBIT 3.4MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 1Mb (128K x 8) Memory Interface: I2C Clock Frequency: 3.4MHz Write Cycle Time - Word, Page: - Access Time: 130ns Voltage - Supply: 2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고125,292	FRAM	FRAM (Ferroelectric RAM)	1Mb (128K x 8)	I2C	3.4MHz	-	130ns	2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AS4C128M8D2-25BIN	Alliance Memory, Inc.	IC SDRAM 1GBIT 400MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고7,920	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
S34ML04G100TFB003	Cypress Semiconductor Corp	IC FLASH 4G PARALLEL 48TSOP I Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고3,952	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	25ns	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
S34MS02G104BHV010	Cypress Semiconductor Corp	IC FLASH 2G PARALLEL 63BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9)	패키지: 63-VFBGA	재고3,152	FLASH	FLASH - NAND	2Gb (128M x 16)	Parallel	-	45ns	45ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	63-VFBGA	63-BGA (11x9)
24CW640T-I/ST	Microchip Technology	IC EEPROM 64K I2C 1MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고6,272	EEPROM	EEPROM	64Kb (8K x 8)	I²C	1MHz	5ms	450ns	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
IS61VPD102418A-200B3I-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165PBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-PBGA (13x15)	패키지: 165-TBGA	재고3,408	SRAM	SRAM - Quad Port, Synchronous	18Mb (1M x 18)	Parallel	200MHz	-	3.1ns	2.375 V ~ 2.625 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-PBGA (13x15)
MT53B384M64D4NH-062 WT ES:B	Micron Technology Inc.	IC DRAM 24G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (384M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,296	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT29F64G08ABCBBH6-6IT:B	Micron Technology Inc.	IC FLASH 64G PARALLEL 167MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,496	FLASH	FLASH - NAND	64Gb (8G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MTFC8GACAALT-4M IT	Micron Technology Inc.	MODULE EMMC 8GB 100TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-TBGA Supplier Device Package: 100-TBGA (14x18)	패키지: 100-TBGA	재고5,552	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	100-TBGA	100-TBGA (14x18)
MT53E512M32D1ZW-046BIT-B	Micron Technology Inc.	LPDDR4 16GBIT 32 200/264 TFBGA 1 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
TMS4044-45NL	Texas Instruments	STANDARD SRAM, 4KX1, 450NS, MOS, Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SM661GX8-AC	Silicon Motion, Inc.	IC 100BGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
M5M5V208AKV-70HIBT	Renesas Electronics Corporation	256K X8, SRAM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
GD25LQ255EYIGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 256MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 256Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	256Mbit	SPI - Quad I/O, QPI	133 MHz	-	-	1.65V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)

M25P10-AVMB3TP/Y TR

Micron Technology Inc.

IC FLASH 1MBIT 50MHZ 8UFDFPN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UFDFPN (2x3)

패키지: 8-UFDFN Exposed Pad

재고7,248

FLASH

FLASH - NOR

1Mb (128K x 8)

SPI

50MHz

15ms, 5ms

-

2.3 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UFDFPN (2x3)

MT29FEN64GDKCAAXDQ-10:A TR

Micron Technology Inc.

IC MEMORY

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,616

-

CY7C1315TV18-200BZC

Cypress Semiconductor Corp

IC SRAM 18MBIT 200MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고4,256

SRAM

SRAM - Synchronous, QDR II

18Mb (512K x 36)

Parallel

200MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

DS1258W-100IND#

Maxim Integrated

IC NVSRAM 2MBIT 100NS 40EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 40-DIP Module (0.610", 15.495mm)
Supplier Device Package: 40-EDIP

패키지: 40-DIP Module (0.610", 15.495mm)

재고3,296

NVSRAM

NVSRAM (Non-Volatile SRAM)

2Mb (128K x 16)

Parallel

-

100ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Through Hole

40-DIP Module (0.610", 15.495mm)

40-EDIP

CY7C1021B-15ZXI

Cypress Semiconductor Corp

IC SRAM 1MBIT 15NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고5,376

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

15ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

7005L20GB

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 20NS 68PGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 68-BPGA
Supplier Device Package: 68-PGA (29.46x29.46)

패키지: 68-BPGA

재고6,416

SRAM

SRAM - Dual Port, Asynchronous

64Kb (8K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

68-BPGA

68-PGA (29.46x29.46)

7132SA55L48B

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 55NS 48LCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LCC
Supplier Device Package: 48-LCC (14.22x14.22)

패키지: 48-LCC

재고7,888

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Surface Mount

48-LCC

48-LCC (14.22x14.22)

70V3569S4BFG8

IDT, Integrated Device Technology Inc

IC SRAM 576KBIT 4.2NS 208CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 576Kb (16K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)

패키지: 208-LFBGA

재고4,400

SRAM

SRAM - Dual Port, Synchronous

576Kb (16K x 36)

Parallel

-

4.2ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

208-LFBGA

208-CABGA (15x15)

CY7C1069GN30-10ZSXIT

Cypress Semiconductor Corp

ASYNC SRAMS

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (2M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,464

SRAM

SRAM - Asynchronous

16Mb (2M x 8)

Parallel

-

10ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

70V07L25JI8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 25NS 68PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)

패키지: 68-LCC (J-Lead)

재고5,184

SRAM

SRAM - Dual Port, Asynchronous

256Kb (32K x 8)

Parallel

-

25ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

68-LCC (J-Lead)

68-PLCC (24.21x24.21)

IS42S81600F-7TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (16M x 8)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고6,016

DRAM

SDRAM

128Mb (16M x 8)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

24AA256-E/ST

Microchip Technology

IC EEPROM 256KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고6,848

EEPROM

256Kb (32K x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

S25FS256SAGNFI000

Cypress Semiconductor Corp

IC FLASH 256MBIT 133MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

패키지: 8-WDFN Exposed Pad

재고4,432

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O, QPI

133MHz

-

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)

25LC040A-I/SN

Microchip Technology

IC EEPROM 4KBIT 10MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고244,500

EEPROM

4Kb (512 x 8)

SPI

10MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

FM24V10-GTR

Cypress Semiconductor Corp

IC FRAM 1MBIT 3.4MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 1Mb (128K x 8)
Memory Interface: I2C
Clock Frequency: 3.4MHz
Write Cycle Time - Word, Page: -
Access Time: 130ns
Voltage - Supply: 2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고125,292

FRAM

FRAM (Ferroelectric RAM)

1Mb (128K x 8)

I2C

3.4MHz

-

130ns

2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AS4C128M8D2-25BIN

Alliance Memory, Inc.

IC SDRAM 1GBIT 400MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고7,920

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 95°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

S34ML04G100TFB003

Cypress Semiconductor Corp

IC FLASH 4G PARALLEL 48TSOP I

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고3,952

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

25ns

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

S34MS02G104BHV010

Cypress Semiconductor Corp

IC FLASH 2G PARALLEL 63BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)

패키지: 63-VFBGA

재고3,152

FLASH

FLASH - NAND

2Gb (128M x 16)

Parallel

-

45ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

63-VFBGA

63-BGA (11x9)

24CW640T-I/ST

Microchip Technology

IC EEPROM 64K I2C 1MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고6,272

EEPROM

64Kb (8K x 8)

I²C

1MHz

5ms

450ns

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

IS61VPD102418A-200B3I-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165PBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-PBGA (13x15)

패키지: 165-TBGA

재고3,408

SRAM

SRAM - Quad Port, Synchronous

18Mb (1M x 18)

Parallel

200MHz

-

3.1ns

2.375 V ~ 2.625 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-PBGA (13x15)

MT53B384M64D4NH-062 WT ES:B

Micron Technology Inc.

IC DRAM 24G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gb (384M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,296

DRAM

SDRAM - Mobile LPDDR4

24Gb (384M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT29F64G08ABCBBH6-6IT:B

Micron Technology Inc.

IC FLASH 64G PARALLEL 167MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,496

FLASH

FLASH - NAND

64Gb (8G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MTFC8GACAALT-4M IT

Micron Technology Inc.

MODULE EMMC 8GB 100TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-TBGA
Supplier Device Package: 100-TBGA (14x18)

패키지: 100-TBGA

재고5,552

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

100-TBGA

100-TBGA (14x18)

MT53E512M32D1ZW-046BIT-B

Micron Technology Inc.

LPDDR4 16GBIT 32 200/264 TFBGA 1

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

패키지: -

Request a Quote

-

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

TMS4044-45NL

Texas Instruments

STANDARD SRAM, 4KX1, 450NS, MOS,

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

SM661GX8-AC

Silicon Motion, Inc.

IC 100BGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

M5M5V208AKV-70HIBT

Renesas Electronics Corporation

256K X8, SRAM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

GD25LQ255EYIGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 256MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

256Mbit

SPI - Quad I/O, QPI

133 MHz

-

1.65V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)