페이지 477 - 메모리 | 집적 회로(IC) | Heisener Electronics
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
W25Q64FVSH01
Winbond Electronics

IC FLASH 64MBIT 104MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,424
FLASH
FLASH - NOR
64Mb (8M x 8)
SPI
104MHz
3ms
-
2.7 V ~ 3.6 V
-
-
-
-
MT47H64M16HR-25E XIT:H TR
Micron Technology Inc.

IC SDRAM 1GBIT 400MHZ 84FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-FBGA (8x12.5)
패키지: 84-TFBGA
재고4,208
DRAM
SDRAM - DDR2
1Gb (64M x 16)
Parallel
400MHz
15ns
400ps
1.7 V ~ 1.9 V
-40°C ~ 95°C (TC)
Surface Mount
84-TFBGA
84-FBGA (8x12.5)
W25X10BVZPIG
Winbond Electronics

IC FLASH 1MBIT 104MHZ 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x5)
패키지: 8-WDFN Exposed Pad
재고3,472
FLASH
FLASH
1Mb (128K x 8)
SPI
104MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x5)
hot STK14C88-5C45M
Cypress Semiconductor Corp

IC NVSRAM 256KBIT 45NS 32CDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 32-CDIP
패키지: 32-CDIP (0.300", 7.62mm)
재고4,784
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
45ns
45ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Through Hole
32-CDIP (0.300", 7.62mm)
32-CDIP
MT46H4M32LFB5-5 IT:K TR
Micron Technology Inc.

IC SDRAM 128MBIT 200MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
패키지: 90-VFBGA
재고2,288
DRAM
SDRAM - Mobile LPDDR
128Mb (4M x 32)
Parallel
200MHz
15ns
5.0ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT47H32M16BN-3:D TR
Micron Technology Inc.

IC SDRAM 512MBIT 333MHZ 84FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-FBGA (10x12.5)
패키지: 84-TFBGA
재고7,696
DRAM
SDRAM - DDR2
512Mb (32M x 16)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
0°C ~ 85°C (TC)
Surface Mount
84-TFBGA
84-FBGA (10x12.5)
AT29C020-70JI
Microchip Technology

IC FLASH 2MBIT 70NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
패키지: 32-LCC (J-Lead)
재고2,208
FLASH
FLASH
2Mb (256K x 8)
Parallel
-
10ms
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
70V25L25PF
IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 25NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (8K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고7,136
SRAM
SRAM - Dual Port, Asynchronous
128Kb (8K x 16)
Parallel
-
25ns
25ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
CY14B101KA-SP45XIT
Cypress Semiconductor Corp

IC NVSRAM 1MBIT 45NS 48SSOP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package: 48-SSOP
패키지: 48-BSSOP (0.295", 7.50mm Width)
재고4,000
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
Parallel
-
45ns
45ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-BSSOP (0.295", 7.50mm Width)
48-SSOP
25LC256X-E/ST
Microchip Technology

IC EEPROM 256KBIT 10MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고2,240
EEPROM
EEPROM
256Kb (32K x 8)
SPI
10MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
AT88SC0204CA-MJTG
Microchip Technology

IC EEPROM 2KBIT 4MHZ M2J

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 4MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 250ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: M2 J, Smart Card Module (TWI)
  • Supplier Device Package: M2 - J Module (TWI)
패키지: M2 J, Smart Card Module (TWI)
재고7,184
EEPROM
EEPROM
2Kb (256 x 8)
I2C
4MHz
5ms
250ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
M2 J, Smart Card Module (TWI)
M2 - J Module (TWI)
CY14V101QS-BK108XI
Cypress Semiconductor Corp

IC NVSRAM 1MBIT 108MHZ 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-FBGA (6x8)
패키지: 24-TBGA
재고8,988
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
SPI
108MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-FBGA (6x8)
hot IS61C6416AL-12TLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 12NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: 44-TSOP (0.400", 10.16mm Width)
재고263,904
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
12ns
12ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
S29PL127J60TAW130
Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 60ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
패키지: 56-TFSOP (0.724", 18.40mm Width)
재고6,928
FLASH
FLASH - NOR
128Mb (8M x 16)
Parallel
-
60ns
60ns
2.7 V ~ 3.6 V
-25°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
CY7C1145LV18-400BZXC
Cypress Semiconductor Corp

IC SRAM 18M PARALLEL 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II+
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: 165-LBGA
재고3,584
SRAM
SRAM - Synchronous, QDR II+
18Mb (512K x 36)
Parallel
400MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
S29VS256RABBHW003
Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 44FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 108MHz
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 80ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-VFBGA
  • Supplier Device Package: 44-FBGA (7.5x5)
패키지: 44-VFBGA
재고2,208
FLASH
FLASH - NOR
256Mb (16M x 16)
Parallel
108MHz
60ns
80ns
1.7 V ~ 1.95 V
-25°C ~ 85°C (TA)
Surface Mount
44-VFBGA
44-FBGA (7.5x5)
CAT24S64C4ATR
ON Semiconductor

IC MEM EEPROM 64 KB I2C

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,352
-
-
-
-
-
-
-
-
-
-
-
-
S71PL032J08BAW0B0C
Cypress Semiconductor Corp

IC FLASH MEMORY SMD

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,672
-
-
-
-
-
-
-
-
-
-
-
-
CYPT1543AV18-250GCMB
Cypress Semiconductor Corp

IC SRAM 72MBIT 250MHZ 165CCGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II+
  • Memory Size: 72Mb (4M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 165-BFCCGA
  • Supplier Device Package: 165-CCGA (21x25)
패키지: 165-BFCCGA
재고7,184
SRAM
SRAM - Synchronous, QDR II+
72Mb (4M x 18)
Parallel
250MHz
-
-
1.7V ~ 1.9V
-55°C ~ 125°C (TA)
Through Hole
165-BFCCGA
165-CCGA (21x25)
W632GU8NB-11
Winbond Electronics

IC SDRAM 2G DDR3 78WBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gb (256M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 933MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-VFBGA (8x10.5)
패키지: 78-VFBGA
재고3,264
DRAM
SDRAM - DDR3L
2Gb (256M x 8)
Parallel
933MHz
15ns
20ns
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
78-VFBGA
78-VFBGA (8x10.5)
GD25LQ256DWAGY
GigaDevice Semiconductor (HK) Limited

IC FLASH 256MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.65V ~ 2V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (5x6)
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
256Mbit
SPI - Quad I/O, QPI
104 MHz
4ms
6 ns
1.65V ~ 2V
-40°C ~ 125°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (5x6)
GD25Q256EFIRR
GigaDevice Semiconductor (HK) Limited

IC FLASH 256MBIT SPI/QUAD 16SOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 256Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOP
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
256Mbit
SPI - Quad I/O
133 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOP
MT62F4DDAM-DC-TR
Micron Technology Inc.

SPECIAL/CUSTOM LPDDR5 PLASTIC MI

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
AT25QF128A-SHBHD-T
Renesas Electronics Corporation

IC FLASH 128MBIT SPI/QUAD 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 120 MHz
  • Write Cycle Time - Word, Page: 50µs, 2.4ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
Request a Quote
FLASH
FLASH - NOR
128Mbit
SPI - Quad I/O
120 MHz
50µs, 2.4ms
7 ns
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
NM93C46TLZEM8
Fairchild Semiconductor

IC EEPROM 1KBIT MICROWIRE 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kbit
  • Memory Interface: Microwire
  • Clock Frequency: 250 kHz
  • Write Cycle Time - Word, Page: 15ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
Request a Quote
EEPROM
EEPROM
1Kbit
Microwire
250 kHz
15ms
-
2.7V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
SM662PXF-BFSS-1
Silicon Motion, Inc.

IC FLASH 960GBIT EMMC 153BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 960Gbit
  • Memory Interface: eMMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-BGA (11.5x13)
패키지: -
재고15
FLASH
FLASH - NAND (SLC)
960Gbit
eMMC
-
-
-
-
-25°C ~ 85°C
Surface Mount
153-TFBGA
153-BGA (11.5x13)
S25HL512TFABHB010
Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
512Mbit
SPI - Quad I/O, QPI
166 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-BGA (8x6)
R1Q2A7236ABB-40IA0
Renesas

IC SRAM 72MBIT PAR 165LBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 72Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 250 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 450 ps
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-LBGA (13x15)
패키지: -
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SRAM
SRAM - Synchronous
72Mbit
Parallel
250 MHz
-
450 ps
1.7V ~ 1.9V
-40°C ~ 85°C (TA)
Surface Mount
165-LBGA
165-LBGA (13x15)