페이지 481 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
DS28EL35QA-742+2TW	Maxim Integrated	SECURE AUTHENTICATOR TDFN Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,808	-	-	-	-	-	-	-	-	-	-	-	-
AT45DB321D-CCU	Adesto Technologies	IC FLASH 32MBIT 66MHZ 24CBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (528 Bytes x 8192 pages) Memory Interface: SPI Clock Frequency: 66MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 24-TBGA, CSPBGA Supplier Device Package: 24-CBGA (8x6)	패키지: 24-TBGA, CSPBGA	재고4,720	FLASH	FLASH	32Mb (528 Bytes x 8192 pages)	SPI	66MHz	6ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	24-TBGA, CSPBGA	24-CBGA (8x6)
MT47H128M8CF-3 AIT:H	Micron Technology Inc.	IC SDRAM 1GBIT 333MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (8x10)	패키지: 60-TFBGA	재고7,072	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	Surface Mount	60-TFBGA	60-FBGA (8x10)
LH28F320SKTD-L70	Sharp Microelectronics	IC FLASH 32MBIT 70NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (2M x 8, 1M x 16 x 2) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	패키지: 56-TFSOP (0.724", 18.40mm Width)	재고28,608	FLASH	FLASH	32Mb (2M x 8, 1M x 16 x 2)	Parallel	-	70ns	70ns	4.75 V ~ 5.25 V	0°C ~ 70°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
AT49LV002T-12JC	Microchip Technology	IC FLASH 2MBIT 120NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 120ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고6,528	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	120ns	3 V ~ 3.6 V	0°C ~ 70°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
71V65603S100BG8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 100MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고3,984	SRAM	SRAM - Synchronous ZBT	9Mb (256K x 36)	Parallel	100MHz	-	5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
W29GL512SH9T TR	Winbond Electronics	IC FLASH 512MBIT 90NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	패키지: 56-TFSOP (0.724", 18.40mm Width)	재고5,328	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
S34SL01G200BHI003	Cypress Semiconductor Corp	NAND Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 25ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,920	FLASH	FLASH - NAND	1Gb (128M x 8)	Parallel	-	-	25ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
AS7C1024B-20JCN	Alliance Memory, Inc.	IC SRAM 1MBIT 20NS 32SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ	패키지: 32-BSOJ (0.400", 10.16mm Width)	재고6,800	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	32-BSOJ (0.400", 10.16mm Width)	32-SOJ
24LC014-E/SN	Microchip Technology	IC EEPROM 1KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고3,200	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SST39VF3201B-70-4I-B3KE	Microchip Technology	IC FLASH 32MBIT 70NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10µs Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA	패키지: 48-TFBGA	재고14,268	FLASH	FLASH	32Mb (2M x 16)	Parallel	-	10µs	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA
AT27C040-70JU-T	Microchip Technology	IC OTP 4MBIT 70NS 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고17,772	EPROM	EPROM - OTP	4Mb (512K x 8)	Parallel	-	-	70ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AS4C8M16SA-7BCN	Alliance Memory, Inc.	IC SDRAM 128MBIT 143MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: 14ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고19,638	DRAM	SDRAM	128Mb (8M x 16)	Parallel	143MHz	14ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
AT28HC64B-12SU	Microchip Technology	IC EEPROM 64KBIT 120NS 28SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	패키지: 28-SOIC (0.295", 7.50mm Width)	재고17,460	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	10ms	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
S34MS04G100TFI003	Cypress Semiconductor Corp	IC FLASH 4G PARALLEL 48TSOP I Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고6,096	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	45ns	45ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
S25FL128LDPBHB030	Cypress Semiconductor Corp	IC NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 66MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	패키지: 24-TBGA	재고3,552	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O, QPI	66MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
W25Q32BVZPJP	Winbond Electronics	IC FLASH MEMORY 32MB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,408	-	-	-	-	-	-	-	-	-	-	-	-
MT53D1024M32D4NQ-046 AAT ES :D	Micron Technology Inc.	IC DRAM 32G 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,904	DRAM	SDRAM - Mobile LPDDR4	32Gb (1G x 32)	-	2133MHz	-	-	1.1V	-40°C ~ 105°C (TA)	-	-	-
MT40A256M16GE-083E:B TR	Micron Technology Inc.	IC SDRAM DDR4 4G PAR 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (9x14)	패키지: 96-TFBGA	재고4,896	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.2GHz	15ns	19ns	1.14V ~ 1.26V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (9x14)
W25Q128JWFIM	Winbond Electronics	IC FLASH 128MBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: 6 ns Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: -	Request a Quote	FLASH	FLASH - NOR	128Mbit	SPI - Quad I/O	133 MHz	3ms	6 ns	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
27S47AFM-B	Rochester Electronics, LLC	27S47AFM/B Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
BR25H160FVT-5ACE2	Rohm Semiconductor	16KBIT, SPI BUS, SERIAL EEPROM F Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kbit Memory Interface: SPI Clock Frequency: 20 MHz Write Cycle Time - Word, Page: 3.5ms Access Time: - Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP-B	패키지: -	재고9,000	EEPROM	EEPROM	16Kbit	SPI	20 MHz	3.5ms	-	1.7V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP-B
IS43LD16640C-25BL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: - Voltage - Supply: 1.14V ~ 1.95V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	1Gbit	Parallel	400 MHz	15ns	-	1.14V ~ 1.95V	0°C ~ 85°C (TC)	-	-	-
MT53E512M64D4HJ-046-AAT-D-TR	Micron Technology Inc.	LPDDR4 32G 512MX64 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 556-TFBGA Supplier Device Package: 556-WFBGA (12.4x12.4)	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	Surface Mount	556-TFBGA	556-WFBGA (12.4x12.4)
MBM29LV160BE-90PBT	Fujitsu	FLASH 16MB Low Voltage Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90 ns Voltage - Supply: 3V Operating Temperature: - Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 48-FBGA	패키지: -	Request a Quote	FLASH	FLASH - NOR	16Mbit	Parallel	-	-	90 ns	3V	-	Surface Mount	-	48-FBGA
5962-8687521YA	Renesas Electronics Corporation	IC SRAM 8KBIT PARALLEL 48LCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 8Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-LCC Supplier Device Package: 48-LCC (14.22x14.22)	패키지: -	Request a Quote	SRAM	SRAM - Dual Port, Synchronous	8Kbit	Parallel	-	35ns	35 ns	4.5V ~ 5.5V	-55°C ~ 125°C (TA)	Surface Mount	48-LCC	48-LCC (14.22x14.22)
MT29F8G08ABBCAH4-AUT-C-TR	Micron Technology Inc.	NAND FLASH PLASTIC M71M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT60B1G16HC-48B-A-TR	Micron Technology Inc.	DDR5 16G 1GX16 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR5 Memory Size: 16Gbit Memory Interface: POD Clock Frequency: 2.4 GHz Write Cycle Time - Word, Page: - Access Time: 16 ns Voltage - Supply: - Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 102-VFBGA Supplier Device Package: 102-VFBGA (9x14)	패키지: -	Request a Quote	DRAM	SDRAM - DDR5	16Gbit	POD	2.4 GHz	-	16 ns	-	0°C ~ 95°C (TC)	Surface Mount	102-VFBGA	102-VFBGA (9x14)

DS28EL35QA-742+2TW

Maxim Integrated

SECURE AUTHENTICATOR TDFN

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,808

-

AT45DB321D-CCU

Adesto Technologies

IC FLASH 32MBIT 66MHZ 24CBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (528 Bytes x 8192 pages)
Memory Interface: SPI
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 24-TBGA, CSPBGA
Supplier Device Package: 24-CBGA (8x6)

패키지: 24-TBGA, CSPBGA

재고4,720

FLASH

32Mb (528 Bytes x 8192 pages)

SPI

66MHz

6ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

24-TBGA, CSPBGA

24-CBGA (8x6)

MT47H128M8CF-3 AIT:H

Micron Technology Inc.

IC SDRAM 1GBIT 333MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (8x10)

패키지: 60-TFBGA

재고7,072

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 95°C (TC)

Surface Mount

60-TFBGA

60-FBGA (8x10)

LH28F320SKTD-L70

Sharp Microelectronics

IC FLASH 32MBIT 70NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (2M x 8, 1M x 16 x 2)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

패키지: 56-TFSOP (0.724", 18.40mm Width)

재고28,608

FLASH

32Mb (2M x 8, 1M x 16 x 2)

Parallel

-

70ns

4.75 V ~ 5.25 V

0°C ~ 70°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

AT49LV002T-12JC

Microchip Technology

IC FLASH 2MBIT 120NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 120ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고6,528

FLASH

2Mb (256K x 8)

Parallel

-

50µs

120ns

3 V ~ 3.6 V

0°C ~ 70°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

71V65603S100BG8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 100MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고3,984

SRAM

SRAM - Synchronous ZBT

9Mb (256K x 36)

Parallel

100MHz

-

5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

W29GL512SH9T TR

Winbond Electronics

IC FLASH 512MBIT 90NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

패키지: 56-TFSOP (0.724", 18.40mm Width)

재고5,328

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

S34SL01G200BHI003

Cypress Semiconductor Corp

NAND

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 25ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,920

FLASH

FLASH - NAND

1Gb (128M x 8)

Parallel

-

25ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

AS7C1024B-20JCN

Alliance Memory, Inc.

IC SRAM 1MBIT 20NS 32SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ

패키지: 32-BSOJ (0.400", 10.16mm Width)

재고6,800

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

32-BSOJ (0.400", 10.16mm Width)

32-SOJ

24LC014-E/SN

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고3,200

EEPROM

1Kb (128 x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SST39VF3201B-70-4I-B3KE

Microchip Technology

IC FLASH 32MBIT 70NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10µs
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA

패키지: 48-TFBGA

재고14,268

FLASH

32Mb (2M x 16)

Parallel

-

10µs

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

AT27C040-70JU-T

Microchip Technology

IC OTP 4MBIT 70NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고17,772

EPROM

EPROM - OTP

4Mb (512K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AS4C8M16SA-7BCN

Alliance Memory, Inc.

IC SDRAM 128MBIT 143MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: 14ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고19,638

DRAM

SDRAM

128Mb (8M x 16)

Parallel

143MHz

14ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

AT28HC64B-12SU

Microchip Technology

IC EEPROM 64KBIT 120NS 28SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

패키지: 28-SOIC (0.295", 7.50mm Width)

재고17,460

EEPROM

64Kb (8K x 8)

Parallel

-

10ms

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

S34MS04G100TFI003

Cypress Semiconductor Corp

IC FLASH 4G PARALLEL 48TSOP I

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고6,096

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

45ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

S25FL128LDPBHB030

Cypress Semiconductor Corp

IC NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

패키지: 24-TBGA

재고3,552

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O, QPI

66MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

W25Q32BVZPJP

Winbond Electronics

IC FLASH MEMORY 32MB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,408

-

MT53D1024M32D4NQ-046 AAT ES :D

Micron Technology Inc.

IC DRAM 32G 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (1G x 32)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,904

DRAM

SDRAM - Mobile LPDDR4

32Gb (1G x 32)

-

2133MHz

-

1.1V

-40°C ~ 105°C (TA)

-

MT40A256M16GE-083E:B TR

Micron Technology Inc.

IC SDRAM DDR4 4G PAR 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (9x14)

패키지: 96-TFBGA

재고4,896

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.2GHz

15ns

19ns

1.14V ~ 1.26V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (9x14)

W25Q128JWFIM

Winbond Electronics

IC FLASH 128MBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: 6 ns
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: -

Request a Quote

FLASH

FLASH - NOR

128Mbit

SPI - Quad I/O

133 MHz

3ms

6 ns

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

27S47AFM-B

Rochester Electronics, LLC

27S47AFM/B

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

BR25H160FVT-5ACE2

Rohm Semiconductor

16KBIT, SPI BUS, SERIAL EEPROM F

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kbit
Memory Interface: SPI
Clock Frequency: 20 MHz
Write Cycle Time - Word, Page: 3.5ms
Access Time: -
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B

패키지: -

재고9,000

EEPROM

16Kbit

SPI

20 MHz

3.5ms

-

1.7V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP-B

IS43LD16640C-25BL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: -
Voltage - Supply: 1.14V ~ 1.95V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR2-S4

1Gbit

Parallel

400 MHz

15ns

-

1.14V ~ 1.95V

0°C ~ 85°C (TC)

-

MT53E512M64D4HJ-046-AAT-D-TR

Micron Technology Inc.

LPDDR4 32G 512MX64 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 556-TFBGA
Supplier Device Package: 556-WFBGA (12.4x12.4)

패키지: -

Request a Quote

-

Surface Mount

556-TFBGA

556-WFBGA (12.4x12.4)

MBM29LV160BE-90PBT

Fujitsu

FLASH 16MB Low Voltage

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90 ns
Voltage - Supply: 3V
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: 48-FBGA

패키지: -

Request a Quote

FLASH

FLASH - NOR

16Mbit

Parallel

-

90 ns

3V

-

Surface Mount

-

48-FBGA

5962-8687521YA

Renesas Electronics Corporation

IC SRAM 8KBIT PARALLEL 48LCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 8Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LCC
Supplier Device Package: 48-LCC (14.22x14.22)

패키지: -

Request a Quote

SRAM

SRAM - Dual Port, Synchronous

8Kbit

Parallel

-

35ns

35 ns

4.5V ~ 5.5V

-55°C ~ 125°C (TA)

Surface Mount

48-LCC

48-LCC (14.22x14.22)

MT29F8G08ABBCAH4-AUT-C-TR

Micron Technology Inc.

NAND FLASH PLASTIC M71M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT60B1G16HC-48B-A-TR

Micron Technology Inc.

DDR5 16G 1GX16 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR5
Memory Size: 16Gbit
Memory Interface: POD
Clock Frequency: 2.4 GHz
Write Cycle Time - Word, Page: -
Access Time: 16 ns
Voltage - Supply: -
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 102-VFBGA
Supplier Device Package: 102-VFBGA (9x14)

패키지: -

Request a Quote

DRAM

SDRAM - DDR5

16Gbit

POD

2.4 GHz

-

16 ns

-

0°C ~ 95°C (TC)

Surface Mount

102-VFBGA

102-VFBGA (9x14)