페이지 531 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS62WV5128DALL-55BI	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 55NS 36BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 36-TFBGA Supplier Device Package: 36-TFBGA (6x8)	패키지: 36-TFBGA	재고6,528	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	55ns	55ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	36-TFBGA	36-TFBGA (6x8)
S70GL02GP12FFI022	Cypress Semiconductor Corp	IC FLASH 2GBIT 120NS 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Gb (256M x 8, 128M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	패키지: 64-LBGA	재고5,696	FLASH	FLASH - NOR	2Gb (256M x 8, 128M x 16)	Parallel	-	-	120ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (11x13)
AS4C128M16D3-12BAN	Alliance Memory, Inc.	IC SDRAM 2GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (13x9)	패키지: 96-TFBGA	재고6,720	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-FBGA (13x9)
70P269L65BYGI8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 65NS 100FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (16K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 65ns Access Time: 65ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-TFBGA Supplier Device Package: 100-CABGA (6x6)	패키지: 100-TFBGA	재고4,656	SRAM	SRAM - Dual Port, Asynchronous	256Kb (16K x 16)	Parallel	-	65ns	65ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	100-TFBGA	100-CABGA (6x6)
R1EX25064ATA00I#S0	Renesas Electronics America	IC EEPROM 64KBIT 5MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: SPI Clock Frequency: 5MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고3,152	EEPROM	EEPROM	64Kb (8K x 8)	SPI	5MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AT45DB161E-MHD-Y	Microchip Technology	IC FLASH 16MBIT 85MHZ 8UDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (528 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 8µs, 6ms Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-UDFN (5x6)	패키지: 8-UDFN Exposed Pad	재고2,224	FLASH	FLASH	16Mb (528 Bytes x 4096 pages)	SPI	85MHz	8µs, 6ms	-	2.5 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-UDFN Exposed Pad	8-UDFN (5x6)
93C86B-E/P	Microchip Technology	IC EEPROM 16KBIT 3MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (1K x 16) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 2ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고5,232	EEPROM	EEPROM	16Kb (1K x 16)	SPI	3MHz	2ms	-	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IS42S16400D-6TLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 64MBIT 166MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고3,152	DRAM	SDRAM	64Mb (4M x 16)	Parallel	166MHz	-	5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
AT28C010-20TI	Microchip Technology	IC EEPROM 1MBIT 200NS 32TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 200ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	패키지: 32-TFSOP (0.724", 18.40mm Width)	재고3,904	EEPROM	EEPROM	1Mb (128K x 8)	Parallel	-	10ms	200ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
70V07S25PF	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 25NS 80TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-TQFP (14x14)	패키지: 80-LQFP	재고5,088	SRAM	SRAM - Dual Port, Asynchronous	256Kb (32K x 8)	Parallel	-	25ns	25ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	80-LQFP	80-TQFP (14x14)
S29GL01GT12TFN013	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 120ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,464	FLASH	FLASH - NOR	1Gb (128M x 8)	Parallel	-	60ns	120ns	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	-	-	-
CY15E064J-SXAT	Cypress Semiconductor Corp	F-RAM MEMORY SERIAL Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,608	FRAM	FRAM (Ferroelectric RAM)	64Kb (8K x 8)	I2C	1MHz	-	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	-	-	-
W631GG8KB-11	Winbond Electronics	IC SDRAM 1GBIT 933MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-WBGA (10.5x8)	패키지: 78-TFBGA	재고6,496	DRAM	SDRAM - DDR3	1Gb (128M x 8)	Parallel	933MHz	-	20ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-WBGA (10.5x8)
M58LR128KT85ZB5F TR	Micron Technology Inc.	IC FLASH 128MBIT 85NS 56VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 66MHz Write Cycle Time - Word, Page: 85ns Access Time: 85ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -30°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-VFBGA Supplier Device Package: 56-VFBGA (7.7x9)	패키지: 56-VFBGA	재고3,984	FLASH	FLASH - NOR	128Mb (8M x 16)	Parallel	66MHz	85ns	85ns	1.7 V ~ 2 V	-30°C ~ 85°C (TA)	Surface Mount	56-VFBGA	56-VFBGA (7.7x9)
W29GL128CH9C	Winbond Electronics	IC FLASH 128MBIT 90NS 56TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8, 8M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFBGA Supplier Device Package: 56-TFBGA (9x7)	패키지: 56-TFBGA	재고7,632	FLASH	FLASH - NOR	128Mb (16M x 8, 8M x 16)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFBGA	56-TFBGA (9x7)
93LC46BT/ST	Microchip Technology	IC EEPROM 1KBIT 2MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고21,588	EEPROM	EEPROM	1Kb (64 x 16)	SPI	2MHz	6ms	-	2.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY7C2165KV18-550BZC	Cypress Semiconductor Corp	IC SRAM 18MBIT 550MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II+ Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 550MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고6,912	SRAM	SRAM - Synchronous, QDR II+	18Mb (512K x 36)	Parallel	550MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
AT25SF041-SHD-B	Adesto Technologies	IC FLASH 4MBIT 104MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 5µs, 2.5ms Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.209", 5.30mm Width)	재고61,740	FLASH	FLASH	4Mb (512K x 8)	SPI	104MHz	5µs, 2.5ms	-	2.5 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
AS4C128M8D3B-12BAN	Alliance Memory, Inc.	IC DRAM 1G PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (10.5x8)	패키지: 78-VFBGA	재고4,064	DRAM	SDRAM - DDR3	1Gb (128M x 8)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 105°C (TC)	Surface Mount	78-VFBGA	78-FBGA (10.5x8)
MT53E2G32D8QD-046 WT:E TR	Micron Technology Inc.	LPDDR4 64G 2GX32 FBGA WT 8DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,472	-	-	-	-	-	-	-	-	-	-	-	-
MT25QU128ABA8E14-1SIT	Micron Technology Inc.	IC FLASH 128M SPI 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 8ms, 2.8ms Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고2,336	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	133MHz	8ms, 2.8ms	-	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT29F4G16ABADAH4-AAT:D	Micron Technology Inc.	IC FLASH 4G PARALLEL 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,832	FLASH	FLASH - NAND	4Gb (256M x 16)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
AT25080B-SSPDGV-T	Microchip Technology	5MHZ A-TMP 8-SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 5MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,424	EEPROM	EEPROM	8Kb (1K x 8)	SPI	5MHz	5ms	-	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AS4C256M16D3LB-10BCN	Alliance Memory, Inc.	4G DDR3 256MX16 1.35V 96-BALL FB Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (9x13.5)	패키지: 96-TFBGA	재고7,056	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	933MHz	15ns	20ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (9x13.5)
SM662PAF-BEST	Silicon Motion, Inc.	IC FLASH 4TBIT EMMC 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 4Tbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-TBGA Supplier Device Package: 153-BGA (11.5x13)	패키지: -	Request a Quote	FLASH	FLASH - NAND (TLC)	4Tbit	eMMC	-	-	-	-	-40°C ~ 85°C	Surface Mount	153-TBGA	153-BGA (11.5x13)
MT62F1G64D4CZ-026-WT-C-TR	Micron Technology Inc.	LPDDR5 64GBIT 64 561/570 TFBGA 4 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IS46LD32128B-25BPLA2	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT HSUL 12 168VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 4Gbit Memory Interface: HSUL_12 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	4Gbit	HSUL_12	400 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
CDP1824CDX	Harris Corporation	IC SRAM 256BIT PARALLEL 18CDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256bit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 710 ns Voltage - Supply: 4V ~ 6.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 18-CDIP Supplier Device Package: 18-CDIP	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	256bit	Parallel	-	-	710 ns	4V ~ 6.5V	-40°C ~ 85°C (TA)	Through Hole	18-CDIP	18-CDIP

IS62WV5128DALL-55BI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 55NS 36BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-TFBGA
Supplier Device Package: 36-TFBGA (6x8)

패키지: 36-TFBGA

재고6,528

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

55ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

36-TFBGA

36-TFBGA (6x8)

S70GL02GP12FFI022

Cypress Semiconductor Corp

IC FLASH 2GBIT 120NS 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gb (256M x 8, 128M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)

패키지: 64-LBGA

재고5,696

FLASH

FLASH - NOR

2Gb (256M x 8, 128M x 16)

Parallel

-

120ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (11x13)

AS4C128M16D3-12BAN

Alliance Memory, Inc.

IC SDRAM 2GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13x9)

패키지: 96-TFBGA

재고6,720

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-FBGA (13x9)

70P269L65BYGI8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 65NS 100FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (16K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 65ns
Access Time: 65ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-TFBGA
Supplier Device Package: 100-CABGA (6x6)

패키지: 100-TFBGA

재고4,656

SRAM

SRAM - Dual Port, Asynchronous

256Kb (16K x 16)

Parallel

-

65ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

100-TFBGA

100-CABGA (6x6)

R1EX25064ATA00I#S0

Renesas Electronics America

IC EEPROM 64KBIT 5MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: SPI
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고3,152

EEPROM

64Kb (8K x 8)

SPI

5MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AT45DB161E-MHD-Y

Microchip Technology

IC FLASH 16MBIT 85MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (528 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 8µs, 6ms
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-UDFN (5x6)

패키지: 8-UDFN Exposed Pad

재고2,224

FLASH

16Mb (528 Bytes x 4096 pages)

SPI

85MHz

8µs, 6ms

-

2.5 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-UDFN Exposed Pad

8-UDFN (5x6)

93C86B-E/P

Microchip Technology

IC EEPROM 16KBIT 3MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (1K x 16)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 2ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고5,232

EEPROM

16Kb (1K x 16)

SPI

3MHz

2ms

-

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

IS42S16400D-6TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고3,152

DRAM

SDRAM

64Mb (4M x 16)

Parallel

166MHz

-

5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

AT28C010-20TI

Microchip Technology

IC EEPROM 1MBIT 200NS 32TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 200ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

패키지: 32-TFSOP (0.724", 18.40mm Width)

재고3,904

EEPROM

1Mb (128K x 8)

Parallel

-

10ms

200ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

70V07S25PF

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 25NS 80TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)

패키지: 80-LQFP

재고5,088

SRAM

SRAM - Dual Port, Asynchronous

256Kb (32K x 8)

Parallel

-

25ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

80-LQFP

80-TQFP (14x14)

S29GL01GT12TFN013

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 120ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,464

FLASH

FLASH - NOR

1Gb (128M x 8)

Parallel

-

60ns

120ns

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

-

CY15E064J-SXAT

Cypress Semiconductor Corp

F-RAM MEMORY SERIAL

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,608

FRAM

FRAM (Ferroelectric RAM)

64Kb (8K x 8)

I2C

1MHz

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

-

W631GG8KB-11

Winbond Electronics

IC SDRAM 1GBIT 933MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-WBGA (10.5x8)

패키지: 78-TFBGA

재고6,496

DRAM

SDRAM - DDR3

1Gb (128M x 8)

Parallel

933MHz

-

20ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-WBGA (10.5x8)

M58LR128KT85ZB5F TR

Micron Technology Inc.

IC FLASH 128MBIT 85NS 56VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-VFBGA
Supplier Device Package: 56-VFBGA (7.7x9)

패키지: 56-VFBGA

재고3,984

FLASH

FLASH - NOR

128Mb (8M x 16)

Parallel

66MHz

85ns

1.7 V ~ 2 V

-30°C ~ 85°C (TA)

Surface Mount

56-VFBGA

56-VFBGA (7.7x9)

W29GL128CH9C

Winbond Electronics

IC FLASH 128MBIT 90NS 56TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8, 8M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFBGA
Supplier Device Package: 56-TFBGA (9x7)

패키지: 56-TFBGA

재고7,632

FLASH

FLASH - NOR

128Mb (16M x 8, 8M x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFBGA

56-TFBGA (9x7)

93LC46BT/ST

Microchip Technology

IC EEPROM 1KBIT 2MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고21,588

EEPROM

1Kb (64 x 16)

SPI

2MHz

6ms

-

2.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY7C2165KV18-550BZC

Cypress Semiconductor Corp

IC SRAM 18MBIT 550MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 550MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고6,912

SRAM

SRAM - Synchronous, QDR II+

18Mb (512K x 36)

Parallel

550MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

AT25SF041-SHD-B

Adesto Technologies

IC FLASH 4MBIT 104MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 5µs, 2.5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.209", 5.30mm Width)

재고61,740

FLASH

4Mb (512K x 8)

SPI

104MHz

5µs, 2.5ms

-

2.5 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

AS4C128M8D3B-12BAN

Alliance Memory, Inc.

IC DRAM 1G PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (10.5x8)

패키지: 78-VFBGA

재고4,064

DRAM

SDRAM - DDR3

1Gb (128M x 8)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 105°C (TC)

Surface Mount

78-VFBGA

78-FBGA (10.5x8)

MT53E2G32D8QD-046 WT:E TR

Micron Technology Inc.

LPDDR4 64G 2GX32 FBGA WT 8DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,472

-

MT25QU128ABA8E14-1SIT

Micron Technology Inc.

IC FLASH 128M SPI 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고2,336

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

133MHz

8ms, 2.8ms

-

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT29F4G16ABADAH4-AAT:D

Micron Technology Inc.

IC FLASH 4G PARALLEL 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,832

FLASH

FLASH - NAND

4Gb (256M x 16)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

-

AT25080B-SSPDGV-T

Microchip Technology

5MHZ A-TMP 8-SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,424

EEPROM

8Kb (1K x 8)

SPI

5MHz

5ms

-

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AS4C256M16D3LB-10BCN

Alliance Memory, Inc.

4G DDR3 256MX16 1.35V 96-BALL FB

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (9x13.5)

패키지: 96-TFBGA

재고7,056

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

933MHz

15ns

20ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (9x13.5)

SM662PAF-BEST

Silicon Motion, Inc.

IC FLASH 4TBIT EMMC 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 4Tbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-TBGA
Supplier Device Package: 153-BGA (11.5x13)

패키지: -

Request a Quote

FLASH

FLASH - NAND (TLC)

4Tbit

eMMC

-

-40°C ~ 85°C

Surface Mount

153-TBGA

153-BGA (11.5x13)

MT62F1G64D4CZ-026-WT-C-TR

Micron Technology Inc.

LPDDR5 64GBIT 64 561/570 TFBGA 4

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IS46LD32128B-25BPLA2

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT HSUL 12 168VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 4Gbit
Memory Interface: HSUL_12
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR2-S4

4Gbit

HSUL_12

400 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

CDP1824CDX

Harris Corporation

IC SRAM 256BIT PARALLEL 18CDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256bit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 710 ns
Voltage - Supply: 4V ~ 6.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 18-CDIP
Supplier Device Package: 18-CDIP

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

256bit

Parallel

-

710 ns

4V ~ 6.5V

-40°C ~ 85°C (TA)

Through Hole

18-CDIP