페이지 579 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS42SM16160D-7BL-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 143MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고6,464	DRAM	SDRAM - Mobile	256Mb (16M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
R1LV5256ESP-5SI#S0	Renesas Electronics America	IC SRAM 256KBIT 55NS 28SOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.342", 8.69mm Width) Supplier Device Package: 28-SOP	패키지: 28-SOIC (0.342", 8.69mm Width)	재고4,352	SRAM	SRAM	256Kb (32K x 8)	Parallel	-	55ns	55ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	28-SOIC (0.342", 8.69mm Width)	28-SOP
AT25DF081A-MH-Y	Microchip Technology	IC FLASH 8MBIT 100MHZ 8UDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (256 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 100MHz Write Cycle Time - Word, Page: 7µs, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-UDFN (5x6)	패키지: 8-UDFN Exposed Pad	재고3,952	FLASH	FLASH	8Mb (256 Bytes x 4096 pages)	SPI	100MHz	7µs, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-UDFN Exposed Pad	8-UDFN (5x6)
IDT71V2548S133PF	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고5,296	SRAM	SRAM - Synchronous ZBT	4.5Mb (256K x 18)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
PC28F640P33T85B TR	Micron Technology Inc.	IC FLASH 64MBIT 85NS 64EASYBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 52MHz Write Cycle Time - Word, Page: 85ns Access Time: 85ns Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (10x13)	패키지: 64-TBGA	재고6,880	FLASH	FLASH - NOR	64Mb (4M x 16)	Parallel	52MHz	85ns	85ns	2.3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	64-TBGA	64-EasyBGA (10x13)
IS43R83200B-5TL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 200MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP II	패키지: 66-TSSOP (0.400", 10.16mm Width)	재고2,112	DRAM	SDRAM - DDR	256Mb (32M x 8)	Parallel	200MHz	15ns	700ps	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP II
LH28F320S5HNS-L90	Sharp Microelectronics	IC FLASH 32MBIT 90NS 56SSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-SOP (0.524", 13.30mm) Supplier Device Package: 56-SSOP	패키지: 56-SOP (0.524", 13.30mm)	재고6,672	FLASH	FLASH	32Mb (4M x 8, 2M x 16)	Parallel	-	90ns	90ns	4.75 V ~ 5.25 V	-40°C ~ 85°C (TA)	Surface Mount	56-SOP (0.524", 13.30mm)	56-SSOP
CY7C1370BV25-167AC	Cypress Semiconductor Corp	IC SRAM 18MBIT 167MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 3.4ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고5,472	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	167MHz	-	3.4ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
AT28C64-12PI	Microchip Technology	IC EEPROM 64KBIT 120NS 28DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 1ms Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP	패키지: 28-DIP (0.600", 15.24mm)	재고239,400	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	1ms	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	28-DIP (0.600", 15.24mm)	28-PDIP
AT27BV256-90TC	Microchip Technology	IC OTP 256KBIT 90NS 28TSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP	패키지: 28-TSSOP (0.465", 11.80mm Width)	재고3,328	EPROM	EPROM - OTP	256Kb (32K x 8)	Parallel	-	-	90ns	2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP
AT27C010-70JC	Microchip Technology	IC OTP 1MBIT 70NS 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고30,648	EPROM	EPROM - OTP	1Mb (128K x 8)	Parallel	-	-	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
70V3389S5BCI	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 5NS 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1.125Mb (64K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고5,616	SRAM	SRAM - Dual Port, Synchronous	1.125Mb (64K x 18)	Parallel	-	-	5ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
MT40A256M16GE-075E IT:B TR	Micron Technology Inc.	IC SDRAM 4GBIT 1.33GHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1.33GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (14x9)	패키지: 96-TFBGA	재고4,464	DRAM	SDRAM - DDR4	4Gb (256M x 16)	Parallel	1.33GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (14x9)
AS8C801825-QC75N	Alliance Memory, Inc.	IC SRAM 9MBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: 8.5ns Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고4,624	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	117MHz	8.5ns	7.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
MT48LC8M16A2B4-6A AIT:L TR	Micron Technology Inc.	IC SDRAM 128MBIT 167MHZ 54VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-VFBGA (8x8)	패키지: 54-VFBGA	재고5,744	DRAM	SDRAM	128Mb (8M x 16)	Parallel	167MHz	12ns	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-VFBGA	54-VFBGA (8x8)
MT28EW01GABA1LJS-0SIT	Micron Technology Inc.	IC FLASH 1GBIT 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8, 64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 95ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	패키지: 56-TFSOP (0.724", 18.40mm Width)	재고3,872	FLASH	FLASH - NOR	1Gb (128M x 8, 64M x 16)	Parallel	-	60ns	95ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
71V546S100PFGI8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 100MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고3,472	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	100MHz	-	5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
71V416L12YGI	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 12NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	패키지: 44-BSOJ (0.400", 10.16mm Width)	재고6,576	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
SST49LF008A-33-4C-WHE-T	Microchip Technology	IC FLASH 8MBIT 33MHZ 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (1M x 8) Memory Interface: Parallel Clock Frequency: 33MHz Write Cycle Time - Word, Page: 20µs Access Time: 120ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-TSOP	패키지: 32-TFSOP (0.488", 12.40mm Width)	재고2,992	FLASH	FLASH	8Mb (1M x 8)	Parallel	33MHz	20µs	120ns	3 V ~ 3.6 V	0°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-TSOP
AS4C4M16SA-6BANTR	Alliance Memory, Inc.	IC SDRAM 64MBIT 166MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 2ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고5,360	DRAM	SDRAM	64Mb (4M x 16)	Parallel	166MHz	2ns	5.4ns	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
CY15E004Q-SXET	Cypress Semiconductor Corp	IC FRAM MEM SER 4KBIT 8SOIC Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 16MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,024	FRAM	FRAM (Ferroelectric RAM)	4Kb (512 x 8)	SPI	16MHz	-	-	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
25AA020AT-I/MS	Microchip Technology	IC EEPROM 2KBIT 10MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고3,888	EEPROM	EEPROM	2Kb (256 x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
S29GL064S80FHV040	Cypress Semiconductor Corp	IC FLASH 64M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 80ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	패키지: 64-LBGA	재고6,032	FLASH	FLASH - NOR	64Mb (4M x 16)	Parallel	-	60ns	80ns	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
IS25LP064A-JLLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 64M SPI 133MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	패키지: 8-WDFN Exposed Pad	재고6,432	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI	133MHz	800µs	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
MT29F16G08CBACAL72A3WC1	Micron Technology Inc.	IC FLASH 16G PARALLEL WAFER Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 16Gb (2G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,856	FLASH	FLASH - NAND	16Gb (2G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MX30LF1G18AC-XKJ	Macronix	MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gbit Memory Interface: ONFI Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 16 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	1Gbit	ONFI	-	20ns	16 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
NM24C05N	Fairchild Semiconductor	IC EEPROM 4KBIT I2C 100KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: I2C Clock Frequency: 100 kHz Write Cycle Time - Word, Page: 10ms Access Time: 3.5 µs Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	패키지: -	Request a Quote	EEPROM	EEPROM	4Kbit	I2C	100 kHz	10ms	3.5 µs	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
IS46QR16512A-083TBLA1	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +95C), 8G Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 1.2 GHz Write Cycle Time - Word, Page: 15ns Access Time: 18 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (10x14)	패키지: -	Request a Quote	DRAM	SDRAM - DDR4	8Gbit	Parallel	1.2 GHz	15ns	18 ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (10x14)

IS42SM16160D-7BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고6,464

DRAM

SDRAM - Mobile

256Mb (16M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

R1LV5256ESP-5SI#S0

Renesas Electronics America

IC SRAM 256KBIT 55NS 28SOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.342", 8.69mm Width)
Supplier Device Package: 28-SOP

패키지: 28-SOIC (0.342", 8.69mm Width)

재고4,352

SRAM

256Kb (32K x 8)

Parallel

-

55ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

28-SOIC (0.342", 8.69mm Width)

28-SOP

AT25DF081A-MH-Y

Microchip Technology

IC FLASH 8MBIT 100MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (256 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: 7µs, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-UDFN (5x6)

패키지: 8-UDFN Exposed Pad

재고3,952

FLASH

8Mb (256 Bytes x 4096 pages)

SPI

100MHz

7µs, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-UDFN Exposed Pad

8-UDFN (5x6)

IDT71V2548S133PF

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고5,296

SRAM

SRAM - Synchronous ZBT

4.5Mb (256K x 18)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

PC28F640P33T85B TR

Micron Technology Inc.

IC FLASH 64MBIT 85NS 64EASYBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 52MHz
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (10x13)

패키지: 64-TBGA

재고6,880

FLASH

FLASH - NOR

64Mb (4M x 16)

Parallel

52MHz

85ns

2.3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

64-TBGA

64-EasyBGA (10x13)

IS43R83200B-5TL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 200MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II

패키지: 66-TSSOP (0.400", 10.16mm Width)

재고2,112

DRAM

SDRAM - DDR

256Mb (32M x 8)

Parallel

200MHz

15ns

700ps

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP II

LH28F320S5HNS-L90

Sharp Microelectronics

IC FLASH 32MBIT 90NS 56SSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-SOP (0.524", 13.30mm)
Supplier Device Package: 56-SSOP

패키지: 56-SOP (0.524", 13.30mm)

재고6,672

FLASH

32Mb (4M x 8, 2M x 16)

Parallel

-

90ns

4.75 V ~ 5.25 V

-40°C ~ 85°C (TA)

Surface Mount

56-SOP (0.524", 13.30mm)

56-SSOP

CY7C1370BV25-167AC

Cypress Semiconductor Corp

IC SRAM 18MBIT 167MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 3.4ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고5,472

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

167MHz

-

3.4ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

AT28C64-12PI

Microchip Technology

IC EEPROM 64KBIT 120NS 28DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 1ms
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP

패키지: 28-DIP (0.600", 15.24mm)

재고239,400

EEPROM

64Kb (8K x 8)

Parallel

-

1ms

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

28-DIP (0.600", 15.24mm)

28-PDIP

AT27BV256-90TC

Microchip Technology

IC OTP 256KBIT 90NS 28TSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP

패키지: 28-TSSOP (0.465", 11.80mm Width)

재고3,328

EPROM

EPROM - OTP

256Kb (32K x 8)

Parallel

-

90ns

2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP

AT27C010-70JC

Microchip Technology

IC OTP 1MBIT 70NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고30,648

EPROM

EPROM - OTP

1Mb (128K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

70V3389S5BCI

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 5NS 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (64K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고5,616

SRAM

SRAM - Dual Port, Synchronous

1.125Mb (64K x 18)

Parallel

-

5ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

MT40A256M16GE-075E IT:B TR

Micron Technology Inc.

IC SDRAM 4GBIT 1.33GHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1.33GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (14x9)

패키지: 96-TFBGA

재고4,464

DRAM

SDRAM - DDR4

4Gb (256M x 16)

Parallel

1.33GHz

-

1.14 V ~ 1.26 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (14x9)

AS8C801825-QC75N

Alliance Memory, Inc.

IC SRAM 9MBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: 8.5ns
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고4,624

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

117MHz

8.5ns

7.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

MT48LC8M16A2B4-6A AIT:L TR

Micron Technology Inc.

IC SDRAM 128MBIT 167MHZ 54VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-VFBGA (8x8)

패키지: 54-VFBGA

재고5,744

DRAM

SDRAM

128Mb (8M x 16)

Parallel

167MHz

12ns

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-VFBGA

54-VFBGA (8x8)

MT28EW01GABA1LJS-0SIT

Micron Technology Inc.

IC FLASH 1GBIT 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8, 64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 95ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

패키지: 56-TFSOP (0.724", 18.40mm Width)

재고3,872

FLASH

FLASH - NOR

1Gb (128M x 8, 64M x 16)

Parallel

-

60ns

95ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

71V546S100PFGI8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 100MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고3,472

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

100MHz

-

5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

71V416L12YGI

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 12NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

패키지: 44-BSOJ (0.400", 10.16mm Width)

재고6,576

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

SST49LF008A-33-4C-WHE-T

Microchip Technology

IC FLASH 8MBIT 33MHZ 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (1M x 8)
Memory Interface: Parallel
Clock Frequency: 33MHz
Write Cycle Time - Word, Page: 20µs
Access Time: 120ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-TSOP

패키지: 32-TFSOP (0.488", 12.40mm Width)

재고2,992

FLASH

8Mb (1M x 8)

Parallel

33MHz

20µs

120ns

3 V ~ 3.6 V

0°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-TSOP

AS4C4M16SA-6BANTR

Alliance Memory, Inc.

IC SDRAM 64MBIT 166MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고5,360

DRAM

SDRAM

64Mb (4M x 16)

Parallel

166MHz

2ns

5.4ns

3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

CY15E004Q-SXET

Cypress Semiconductor Corp

IC FRAM MEM SER 4KBIT 8SOIC

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 16MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,024

FRAM

FRAM (Ferroelectric RAM)

4Kb (512 x 8)

SPI

16MHz

-

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

25AA020AT-I/MS

Microchip Technology

IC EEPROM 2KBIT 10MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고3,888

EEPROM

2Kb (256 x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

S29GL064S80FHV040

Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

패키지: 64-LBGA

재고6,032

FLASH

FLASH - NOR

64Mb (4M x 16)

Parallel

-

60ns

80ns

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

IS25LP064A-JLLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 64M SPI 133MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

패키지: 8-WDFN Exposed Pad

재고6,432

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI

133MHz

800µs

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

MT29F16G08CBACAL72A3WC1

Micron Technology Inc.

IC FLASH 16G PARALLEL WAFER

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 16Gb (2G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,856

FLASH

FLASH - NAND

16Gb (2G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MX30LF1G18AC-XKJ

Macronix

MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gbit
Memory Interface: ONFI
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 16 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

1Gbit

ONFI

-

20ns

16 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

NM24C05N

Fairchild Semiconductor

IC EEPROM 4KBIT I2C 100KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: I2C
Clock Frequency: 100 kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 3.5 µs
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

패키지: -

Request a Quote

EEPROM

4Kbit

I2C

100 kHz

10ms

3.5 µs

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-DIP

IS46QR16512A-083TBLA1

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 8G

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 1.2 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 18 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (10x14)

패키지: -

Request a Quote

DRAM

SDRAM - DDR4

8Gbit

Parallel

1.2 GHz

15ns

18 ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (10x14)