페이지 704 - 메모리 | 집적 회로(IC) | Heisener Electronics
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT46V64M8TG-5B:J TR
Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 66TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.5 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP
패키지: 66-TSSOP (0.400", 10.16mm Width)
재고3,840
DRAM
SDRAM - DDR
512Mb (64M x 8)
Parallel
200MHz
15ns
700ps
2.5 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP
MT29E128G08CECABJ1-10Z:A
Micron Technology Inc.

IC FLASH 128GBIT 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 128Gb (16G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,296
FLASH
FLASH - NAND
128Gb (16G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
hot MT46H64M32L2JG-5:A
Micron Technology Inc.

IC SDRAM 2GBIT 200MHZ 168BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 2Gb (64M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 168-VFBGA
  • Supplier Device Package: 168-VFBGA (12x12)
패키지: 168-VFBGA
재고5,872
DRAM
SDRAM - Mobile LPDDR
2Gb (64M x 32)
Parallel
200MHz
15ns
5.0ns
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
168-VFBGA
168-VFBGA (12x12)
hot IS42S16160B-7TL-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 143MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고14,664
DRAM
SDRAM
256Mb (16M x 16)
Parallel
143MHz
-
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MT48LC32M8A2BB-7E:D
Micron Technology Inc.

IC SDRAM 256MBIT 133MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 14ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-FBGA
  • Supplier Device Package: 60-FBGA (8x16)
패키지: 60-FBGA
재고4,528
DRAM
SDRAM
256Mb (32M x 8)
Parallel
133MHz
14ns
5.4ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
60-FBGA
60-FBGA (8x16)
MT47H32M16CC-5E IT:B TR
Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 84FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 600ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-FBGA (12x12.5)
패키지: 84-TFBGA
재고2,640
DRAM
SDRAM - DDR2
512Mb (32M x 16)
Parallel
200MHz
15ns
600ps
1.7 V ~ 1.9 V
-40°C ~ 95°C (TC)
Surface Mount
84-TFBGA
84-FBGA (12x12.5)
AT27C256R-15PI
Microchip Technology

IC OTP 256KBIT 150NS 28DIP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.600", 15.24mm)
  • Supplier Device Package: 28-PDIP
패키지: 28-DIP (0.600", 15.24mm)
재고4,528
EPROM
EPROM - OTP
256Kb (32K x 8)
Parallel
-
-
150ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Through Hole
28-DIP (0.600", 15.24mm)
28-PDIP
24AA02T/ST
Microchip Technology

IC EEPROM 2KBIT 400KHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고5,184
EEPROM
EEPROM
2Kb (256 x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
7133LA55J
IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 55NS 68PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 32Kb (2K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 68-LCC (J-Lead)
  • Supplier Device Package: 68-PLCC (24.21x24.21)
패키지: 68-LCC (J-Lead)
재고3,808
SRAM
SRAM - Dual Port, Asynchronous
32Kb (2K x 16)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
68-LCC (J-Lead)
68-PLCC (24.21x24.21)
CY7C1360C-200BGCT
Cypress Semiconductor Corp

IC SRAM 9MBIT 200MHZ 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
패키지: 119-BGA
재고4,736
SRAM
SRAM - Synchronous
9Mb (256K x 36)
Parallel
200MHz
-
3ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
IS43TR16256A-15HBL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 667MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 667MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-TWBGA (9x13)
패키지: 96-TFBGA
재고4,272
DRAM
SDRAM - DDR3
4Gb (256M x 16)
Parallel
667MHz
15ns
20ns
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-TWBGA (9x13)
S29GL256P90FFCR20
Cypress Semiconductor Corp

IC FLASH 256MBIT 90NS 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-Fortified BGA (13x11)
패키지: 64-LBGA
재고7,440
FLASH
FLASH - NOR
256Mb (32M x 8)
Parallel
-
90ns
90ns
3 V ~ 3.6 V
0°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-Fortified BGA (13x11)
71V3556SA166BQGI8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
패키지: 165-TBGA
재고7,568
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
166MHz
-
3.5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
MT29F1G08ABBEAH4-IT:E
Micron Technology Inc.

IC FLASH 1GBIT 25NS 63VFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 63-VFBGA
  • Supplier Device Package: 63-VFBGA (10.5x13)
패키지: 63-VFBGA
재고7,456
FLASH
FLASH - NAND
1Gb (128M x 8)
Parallel
-
-
-
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
63-VFBGA
63-VFBGA (10.5x13)
IS66WV51216EBLL-70BLI-TR
ISSI, Integrated Silicon Solution Inc

IC PSRAM 8MBIT 70NS 48BGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA
  • Supplier Device Package: 48-TFBGA (6x8)
패키지: 48-TFBGA
재고4,992
PSRAM
PSRAM (Pseudo SRAM)
8Mb (512K x 16)
Parallel
-
70ns
70ns
2.5 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (6x8)
AS6C62256-55SCNTR
Alliance Memory, Inc.

IC SRAM 256KBIT 55NS 28SOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SOIC (0.330", 8.38mm Width)
  • Supplier Device Package: 28-SOP
패키지: 28-SOIC (0.330", 8.38mm Width)
재고7,680
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
55ns
55ns
2.7 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
28-SOIC (0.330", 8.38mm Width)
28-SOP
IS43TR81280BL-125JBLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 800MHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-TFBGA
  • Supplier Device Package: 78-TWBGA (8x10.5)
패키지: 78-TFBGA
재고7,632
DRAM
SDRAM - DDR3L
1Gb (128M x 8)
Parallel
800MHz
15ns
20ns
1.283 V ~ 1.45 V
-40°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-TWBGA (8x10.5)
S29AL016J70TFM010
Cypress Semiconductor Corp

IC FLASH 16MBIT 70NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8, 1M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고5,232
FLASH
FLASH - NOR
16Mb (2M x 8, 1M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
23LCV1024-I/P
Microchip Technology

IC SRAM 1MBIT 20MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: SPI - Dual I/O
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고8,940
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mb (128K x 8)
SPI - Dual I/O
20MHz
-
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
hot 25LC512T-I/SN
Microchip Technology

IC EEPROM 512KBIT 20MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고98,064
EEPROM
EEPROM
512Kb (64K x 8)
SPI
20MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
25AA160B-I/S15K
Microchip Technology

IC EEPROM 16K SPI 10MHZ WAFER

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
패키지: Die
재고4,560
EEPROM
EEPROM
16Kb (2K x 8)
SPI
10MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
Die
Die
W631GU6MB11I
Winbond Electronics

IC SDRAM 1GBIT 933MHZ 96WBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,608
-
-
-
-
-
-
-
-
-
-
-
-
MT62F1G32D4DS-031-WT-B-TR
Micron Technology Inc.

LPDDR5 32G 1GX32 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 32Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 3.2 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.05V
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
32Gbit
Parallel
3.2 GHz
-
-
1.05V
-25°C ~ 85°C
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
IS45S32400J-6BLA1
ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 90TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: -
Request a Quote
DRAM
SDRAM
128Mbit
LVTTL
166 MHz
-
5.4 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
CY7C274-55JC
Cypress Semiconductor Corp

IC EPROM 256KBIT PARALLEL

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 256Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 55 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
EPROM
EPROM - OTP
256Kbit
Parallel
-
-
55 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
-
-
-
W9751G8NB25I-TR
Winbond Electronics

IC DRAM 512MBIT PAR 60VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 512Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 57.5 ns
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 60-VFBGA
  • Supplier Device Package: 60-VFBGA (8x9.5)
패키지: -
Request a Quote
DRAM
SDRAM - DDR2
512Mbit
Parallel
400 MHz
15ns
57.5 ns
1.7V ~ 1.9V
-40°C ~ 95°C (TC)
Surface Mount
60-VFBGA
60-VFBGA (8x9.5)
CY14B101LA-SP25XIT
Infineon Technologies

IC NVSRAM 1MBIT PARALLEL 48SSOP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 25ns
  • Access Time: 25 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package: 48-SSOP
패키지: -
재고6,000
NVSRAM
NVSRAM (Non-Volatile SRAM)
1Mbit
Parallel
-
25ns
25 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-BSSOP (0.295", 7.50mm Width)
48-SSOP
UPD44325362BF5-E40-FQ1-A
Renesas Electronics Corporation

IC SRAM 36MBIT PAR 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 36Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 250 MHz
  • Write Cycle Time - Word, Page: 4ns
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-FBGA
  • Supplier Device Package: 165-FBGA (15x17)
패키지: -
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SRAM
SRAM - Synchronous, QDR II
36Mbit
Parallel
250 MHz
4ns
-
1.7V ~ 1.9V
0°C ~ 70°C (TA)
Surface Mount
165-FBGA
165-FBGA (15x17)