페이지 725 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
70P255L90BYGI	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 90NS 100FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-TFBGA Supplier Device Package: 100-CABGA (6x6)	패키지: 100-TFBGA	재고4,192	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	90ns	90ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	100-TFBGA	100-CABGA (6x6)
MT41J256M16HA-093G:E	Micron Technology Inc.	IC SDRAM 4GBIT 1067MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1066MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (9x14)	패키지: 96-TFBGA	재고7,200	DRAM	SDRAM - DDR3	4Gb (256M x 16)	Parallel	1066MHz	-	20ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (9x14)
IDT71V416S20PHG	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 20NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고3,440	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	20ns	20ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
AT28C17-20SI	Microchip Technology	IC EEPROM 16KBIT 200NS 28SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 1ms Access Time: 200ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	패키지: 28-SOIC (0.295", 7.50mm Width)	재고6,624	EEPROM	EEPROM	16Kb (2K x 8)	Parallel	-	1ms	200ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
AT28HC256-70PC	Microchip Technology	IC EEPROM 256KBIT 70NS 28DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP	패키지: 28-DIP (0.600", 15.24mm)	재고4,384	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Through Hole	28-DIP (0.600", 15.24mm)	28-PDIP
CY7C1314KV18-300BZXC	Cypress Semiconductor Corp	IC SRAM 18MBIT 300MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 300MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고2,704	SRAM	SRAM - Synchronous, QDR II	18Mb (512K x 36)	Parallel	300MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
IS43LR32160B-6BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile DDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	패키지: 90-TFBGA	재고6,192	DRAM	SDRAM - Mobile DDR	512Mb (16M x 32)	Parallel	166MHz	12ns	5.5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
CY7C1041GE30-10ZSXIT	Cypress Semiconductor Corp	ASYNC SRAMS Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,616	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
CY14MB064J2A-SXIT	Cypress Semiconductor Corp	IC NVSRAM 64KBIT 3.4MHZ 8SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Memory Interface: I2C Clock Frequency: 3.4MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,240	NVSRAM	NVSRAM (Non-Volatile SRAM)	64Kb (8K x 8)	I2C	3.4MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
24AA014HT-I/MS	Microchip Technology	IC EEPROM 1KBIT 400KHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고5,760	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
BR24T08FVT-WE2	Rohm Semiconductor	IC EEPROM 8KBIT 400KHZ 8TSSOP-B Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.6 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP-B	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고5,520	EEPROM	EEPROM	8Kb (1K x 8)	I2C	400kHz	5ms	-	1.6 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP-B
24AA01T-I/OT	Microchip Technology	IC EEPROM 1KBIT 400KHZ SOT23-5 Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 3500ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SOT-23-5	패키지: SC-74A, SOT-753	재고156,084	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	5ms	3500ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	SC-74A, SOT-753	SOT-23-5
X20C16SI-35	Renesas Electronics America	IC NVSRAM 16K PARALLEL 28SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	패키지: 28-SOIC (0.295", 7.50mm Width)	재고7,408	NVSRAM	NVSRAM (Non-Volatile SRAM)	16Kb (2K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
S25FL128LDPBHA030	Cypress Semiconductor Corp	IC 128M FLASH MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 66MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	패키지: 24-TBGA	재고7,744	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI - Quad I/O, QPI	66MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
S25FL164K0XMFA010	Cypress Semiconductor Corp	IC FLASH 64M SPI 108MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.209", 5.30mm Width)	재고3,456	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O	108MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
IS25WP016-JNLE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 16M SPI 133MHZ 8SOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,464	FLASH	FLASH - NOR	16Mb (2M x 8)	SPI - Quad I/O, QPI	133MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT53B1G32D4NQ-062 WT ES:D TR	Micron Technology Inc.	LPDDR4 32G 1GX32 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,400	-	-	-	-	-	-	-	-	-	-	-	-
MT53B1024M64D8WF-062 WT ES:D	Micron Technology Inc.	IC DRAM 64G 1600MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gb (1G x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,368	DRAM	SDRAM - Mobile LPDDR4	64Gb (1G x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53E384M32D2DS-053 AAT:E TR	Micron Technology Inc.	IC DRAM LPDDR4 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 12Gb (384M x 32) Memory Interface: - Clock Frequency: 1.866GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 0.6V, 1.1V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	패키지: -	재고2,704	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	-	1.866GHz	-	-	0.6V, 1.1V	-40°C ~ 105°C (TC)	Surface Mount	-	-
CY15V104QI-20LPXI	Cypress Semiconductor Corp	IC FRAM 4MBIT 20MHZ 8GQFN Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,224	-	-	-	-	-	-	-	-	-	-	-	-
GD25LQ16ESIGR	GigaDevice Semiconductor (HK) Limited	16MBIT, 1.8V, SOP8 208MIL, INDUS Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 16Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 60µs, 2.4ms Access Time: 6 ns Voltage - Supply: 1.65V ~ 2.1V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOP	패키지: -	재고5,901	FLASH	FLASH - NOR (SLC)	16Mbit	SPI - Quad I/O, QPI	133 MHz	60µs, 2.4ms	6 ns	1.65V ~ 2.1V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOP
MT58V512V36FT-8-5	Micron Technology Inc.	IC SRAM 18MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.375V ~ 2.625V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	패키지: -	Request a Quote	SRAM	SRAM - Standard	18Mbit	Parallel	-	-	-	2.375V ~ 2.625V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MT62F1536M64D8EK-023-WT-C-TR	Micron Technology Inc.	LPDDR5 96GBIT 64 441/441 TFBGA 8 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5X Memory Size: 96Gbit Memory Interface: LVSTL Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.01V ~ 1.12V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 441-TFBGA Supplier Device Package: 441-TFBGA (14x14)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5X	96Gbit	LVSTL	4.266 GHz	-	-	1.01V ~ 1.12V	-25°C ~ 85°C (TC)	Surface Mount	441-TFBGA	441-TFBGA (14x14)
AM27S43A-BUA	Advanced Micro Devices	IC PROM 32KBIT PARALLEL 32CLCC Memory Type: Non-Volatile Memory Format: PROM Technology: - Memory Size: 32Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 55 ns Voltage - Supply: 4.75V ~ 5.25V Operating Temperature: 0°C ~ 75°C (TA) Mounting Type: Surface Mount Package / Case: 32-CLCC Supplier Device Package: 32-CLCC	패키지: -	Request a Quote	PROM	-	32Kbit	Parallel	-	-	55 ns	4.75V ~ 5.25V	0°C ~ 75°C (TA)	Surface Mount	32-CLCC	32-CLCC
IS43TR16128D-107MBLI-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2GBIT PAR 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: -	Request a Quote	DRAM	SDRAM - DDR3	2Gbit	Parallel	933 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
PC28F128J3F75B	Alliance Memory, Inc.	MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 128Mbit Memory Interface: CFI Clock Frequency: - Write Cycle Time - Word, Page: 75ns Access Time: 75 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-TBGA Supplier Device Package: 64-EasyBGA (10x13)	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	128Mbit	CFI	-	75ns	75 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	64-TBGA	64-EasyBGA (10x13)
CG8721AM	Infineon Technologies	IC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
S70GL02GT12FHBV20	Infineon Technologies	IC FLASH 2GBIT PARALLEL 64FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	패키지: -	Request a Quote	FLASH	FLASH - NOR	2Gbit	Parallel	-	-	120 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)

70P255L90BYGI

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 90NS 100FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-TFBGA
Supplier Device Package: 100-CABGA (6x6)

패키지: 100-TFBGA

재고4,192

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

90ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

100-TFBGA

100-CABGA (6x6)

MT41J256M16HA-093G:E

Micron Technology Inc.

IC SDRAM 4GBIT 1067MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1066MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (9x14)

패키지: 96-TFBGA

재고7,200

DRAM

SDRAM - DDR3

4Gb (256M x 16)

Parallel

1066MHz

-

20ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (9x14)

IDT71V416S20PHG

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 20NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고3,440

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

20ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

AT28C17-20SI

Microchip Technology

IC EEPROM 16KBIT 200NS 28SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 1ms
Access Time: 200ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

패키지: 28-SOIC (0.295", 7.50mm Width)

재고6,624

EEPROM

16Kb (2K x 8)

Parallel

-

1ms

200ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

AT28HC256-70PC

Microchip Technology

IC EEPROM 256KBIT 70NS 28DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP

패키지: 28-DIP (0.600", 15.24mm)

재고4,384

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Through Hole

28-DIP (0.600", 15.24mm)

28-PDIP

CY7C1314KV18-300BZXC

Cypress Semiconductor Corp

IC SRAM 18MBIT 300MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 300MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고2,704

SRAM

SRAM - Synchronous, QDR II

18Mb (512K x 36)

Parallel

300MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

IS43LR32160B-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile DDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

패키지: 90-TFBGA

재고6,192

DRAM

SDRAM - Mobile DDR

512Mb (16M x 32)

Parallel

166MHz

12ns

5.5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

CY7C1041GE30-10ZSXIT

Cypress Semiconductor Corp

ASYNC SRAMS

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,616

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

CY14MB064J2A-SXIT

Cypress Semiconductor Corp

IC NVSRAM 64KBIT 3.4MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: I2C
Clock Frequency: 3.4MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,240

NVSRAM

NVSRAM (Non-Volatile SRAM)

64Kb (8K x 8)

I2C

3.4MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

24AA014HT-I/MS

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고5,760

EEPROM

1Kb (128 x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

BR24T08FVT-WE2

Rohm Semiconductor

IC EEPROM 8KBIT 400KHZ 8TSSOP-B

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.6 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP-B

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고5,520

EEPROM

8Kb (1K x 8)

I2C

400kHz

5ms

-

1.6 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP-B

24AA01T-I/OT

Microchip Technology

IC EEPROM 1KBIT 400KHZ SOT23-5

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 3500ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SOT-23-5

패키지: SC-74A, SOT-753

재고156,084

EEPROM

1Kb (128 x 8)

I2C

400kHz

5ms

3500ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

SC-74A, SOT-753

SOT-23-5

X20C16SI-35

Renesas Electronics America

IC NVSRAM 16K PARALLEL 28SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

패키지: 28-SOIC (0.295", 7.50mm Width)

재고7,408

NVSRAM

NVSRAM (Non-Volatile SRAM)

16Kb (2K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

S25FL128LDPBHA030

Cypress Semiconductor Corp

IC 128M FLASH MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

패키지: 24-TBGA

재고7,744

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI - Quad I/O, QPI

66MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

S25FL164K0XMFA010

Cypress Semiconductor Corp

IC FLASH 64M SPI 108MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.209", 5.30mm Width)

재고3,456

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O

108MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

IS25WP016-JNLE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 16M SPI 133MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,464

FLASH

FLASH - NOR

16Mb (2M x 8)

SPI - Quad I/O, QPI

133MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT53B1G32D4NQ-062 WT ES:D TR

Micron Technology Inc.

LPDDR4 32G 1GX32 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,400

-

MT53B1024M64D8WF-062 WT ES:D

Micron Technology Inc.

IC DRAM 64G 1600MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,368

DRAM

SDRAM - Mobile LPDDR4

64Gb (1G x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53E384M32D2DS-053 AAT:E TR

Micron Technology Inc.

IC DRAM LPDDR4 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 12Gb (384M x 32)
Memory Interface: -
Clock Frequency: 1.866GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 0.6V, 1.1V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,704

DRAM

SDRAM - Mobile LPDDR4

12Gb (384M x 32)

-

1.866GHz

-

0.6V, 1.1V

-40°C ~ 105°C (TC)

Surface Mount

-

CY15V104QI-20LPXI

Cypress Semiconductor Corp

IC FRAM 4MBIT 20MHZ 8GQFN

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,224

-

GD25LQ16ESIGR

GigaDevice Semiconductor (HK) Limited

16MBIT, 1.8V, SOP8 208MIL, INDUS

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 16Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 60µs, 2.4ms
Access Time: 6 ns
Voltage - Supply: 1.65V ~ 2.1V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고5,901

FLASH

FLASH - NOR (SLC)

16Mbit

SPI - Quad I/O, QPI

133 MHz

60µs, 2.4ms

6 ns

1.65V ~ 2.1V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOP

MT58V512V36FT-8-5

Micron Technology Inc.

IC SRAM 18MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.375V ~ 2.625V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

패키지: -

Request a Quote

SRAM

SRAM - Standard

18Mbit

Parallel

-

2.375V ~ 2.625V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MT62F1536M64D8EK-023-WT-C-TR

Micron Technology Inc.

LPDDR5 96GBIT 64 441/441 TFBGA 8

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5X
Memory Size: 96Gbit
Memory Interface: LVSTL
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.01V ~ 1.12V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 441-TFBGA
Supplier Device Package: 441-TFBGA (14x14)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5X

96Gbit

LVSTL

4.266 GHz

-

1.01V ~ 1.12V

-25°C ~ 85°C (TC)

Surface Mount

441-TFBGA

441-TFBGA (14x14)

AM27S43A-BUA

Advanced Micro Devices

IC PROM 32KBIT PARALLEL 32CLCC

Memory Type: Non-Volatile
Memory Format: PROM
Technology: -
Memory Size: 32Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 55 ns
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 75°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-CLCC
Supplier Device Package: 32-CLCC

패키지: -

Request a Quote

PROM

-

32Kbit

Parallel

-

55 ns

4.75V ~ 5.25V

0°C ~ 75°C (TA)

Surface Mount

32-CLCC

IS43TR16128D-107MBLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT PAR 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: -

Request a Quote

DRAM

SDRAM - DDR3

2Gbit

Parallel

933 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

PC28F128J3F75B

Alliance Memory, Inc.

MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 128Mbit
Memory Interface: CFI
Clock Frequency: -
Write Cycle Time - Word, Page: 75ns
Access Time: 75 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-EasyBGA (10x13)

패키지: -

Request a Quote

FLASH

FLASH - NOR (SLC)

128Mbit

CFI

-

75ns

75 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

64-TBGA

64-EasyBGA (10x13)

CG8721AM

Infineon Technologies

IC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

S70GL02GT12FHBV20

Infineon Technologies

IC FLASH 2GBIT PARALLEL 64FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

패키지: -

Request a Quote

FLASH

FLASH - NOR

2Gbit

Parallel

-

120 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)