페이지 776 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
EDB2432BCPA-8D-F-D	Micron Technology Inc.	IC SDRAM 2GBIT 400MHZ 168FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-WFBGA Supplier Device Package: 168-FBGA (12x12)	패키지: 168-WFBGA	재고3,152	DRAM	SDRAM - Mobile LPDDR2	2Gb (64M x 32)	Parallel	400MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	Surface Mount	168-WFBGA	168-FBGA (12x12)
AT45DB161E-SHD-T	Microchip Technology	IC FLASH 16MBIT 85MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (528 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 8µs, 6ms Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.209", 5.30mm Width)	재고2,243,892	FLASH	FLASH	16Mb (528 Bytes x 4096 pages)	SPI	85MHz	8µs, 6ms	-	2.5 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
M24128-BFCS6TP/A	STMicroelectronics	IC EEPROM 128KBIT 400KHZ 8WLCSP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFBGA Supplier Device Package: 8-WLCSP (1.785x1.38)	패키지: 8-UFBGA	재고5,776	EEPROM	EEPROM	128Kb (16K x 8)	I2C	1MHz	5ms	450ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFBGA	8-WLCSP (1.785x1.38)
IDT70T3319S133DD	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 144TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 2.4 V ~ 2.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Supplier Device Package: 144-TQFP (20x20)	패키지: 144-LQFP Exposed Pad	재고2,304	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (256K x 18)	Parallel	133MHz	-	4.2ns	2.4 V ~ 2.6 V	0°C ~ 70°C (TA)	Surface Mount	144-LQFP Exposed Pad	144-TQFP (20x20)
AT25256AN-10SU-2.7	Microchip Technology	IC EEPROM 256KBIT 20MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고19,788	EEPROM	EEPROM	256Kb (32K x 8)	SPI	20MHz	5ms	-	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
7143LA55GB	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 55NS 68PGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (2K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 68-BPGA Supplier Device Package: 68-PGA (29.46x29.46)	패키지: 68-BPGA	재고6,496	SRAM	SRAM - Dual Port, Asynchronous	32Kb (2K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	68-BPGA	68-PGA (29.46x29.46)
S30ML512P50TFI033	Cypress Semiconductor Corp	IC FLASH MEMORY 48TSOP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,856	-	-	-	-	-	-	-	-	-	-	-	-
W94AD2KBJX5E	Winbond Electronics	IC SDRAM 1GBIT 200MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 1Gb (32M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-VFBGA (8x13)	패키지: 90-TFBGA	재고7,200	DRAM	SDRAM - Mobile LPDDR	1Gb (32M x 32)	Parallel	200MHz	15ns	5ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TC)	Surface Mount	90-TFBGA	90-VFBGA (8x13)
SST26WF016BT-104I/CS	Microchip Technology	IC FLASH 16MBIT 104MHZ 8CSP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFBGA, CSPBGA Supplier Device Package: 8-CSP	패키지: 8-UFBGA, CSPBGA	재고4,544	FLASH	FLASH	16Mb (2M x 8)	SPI - Quad I/O	104MHz	1.5ms	-	1.65 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFBGA, CSPBGA	8-CSP
25LC256T-E/MF	Microchip Technology	IC EEPROM 256KBIT 10MHZ 8DFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN-S (6x5)	패키지: 8-VDFN Exposed Pad	재고5,952	EEPROM	EEPROM	256Kb (32K x 8)	SPI	10MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-DFN-S (6x5)
24VL025T/MS	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.5 V ~ 3.6 V Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고7,632	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	1.5 V ~ 3.6 V	-20°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
24LC128T-I/MNY	Microchip Technology	IC EEPROM 128KBIT 400KHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	패키지: 8-WFDFN Exposed Pad	재고6,192	EEPROM	EEPROM	128Kb (16K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
93LC46A-I/S15K	Microchip Technology	IC EEPROM 1K SPI 2MHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고5,184	EEPROM	EEPROM	1Kb (128 x 8)	SPI	2MHz	6ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
S29GL01GT11TFIV40	Cypress Semiconductor Corp	IC 1 GB FLASH MEMORY Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,120	-	-	-	-	-	-	-	-	-	-	-	-
S29GL512S11FHIV10	Cypress Semiconductor Corp	IC FLASH 512M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-Fortified BGA (13x11)	패키지: 64-LBGA	재고6,080	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	-	60ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-Fortified BGA (13x11)
S29GL256P11FFI022	Cypress Semiconductor Corp	IC FLASH 256M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	패키지: 64-LBGA	재고7,952	FLASH	FLASH - NOR	256Mb (32M x 8)	Parallel	-	110ns	110ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
W632GU8MB-15 TR	Winbond Electronics	IC DRAM 2G PARALLEL 667MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-VFBGA (8x10.5)	패키지: 78-VFBGA	재고7,824	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	667MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-VFBGA	78-VFBGA (8x10.5)
MT53D2G32D8QD-053 WT ES:E TR	Micron Technology Inc.	LPDDR4 64G 1GX64 FBGA 8DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,328	-	-	-	-	-	-	-	-	-	-	-	-
MT53D2048M32D8QD-046 WT ES:D TR	Micron Technology Inc.	IC DRAM 64G 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gb (2G x 32) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,968	DRAM	SDRAM - Mobile LPDDR4	64Gb (2G x 32)	-	2133MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
7134SA70JI	IDT, Integrated Device Technology Inc	IC SRAM 32K PARALLEL 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (4K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	패키지: 52-LCC (J-Lead)	재고4,432	SRAM	SRAM - Dual Port, Asynchronous	32Kb (4K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
MT28EW01GABA1HPC-0AAT	Micron Technology Inc.	IC FLASH 1G PARALLEL 64LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8, 64M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 105ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LBGA (11x13)	패키지: 64-LBGA	재고4,224	FLASH	FLASH - NOR	1Gb (128M x 8, 64M x 16)	Parallel	-	60ns	105ns	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	64-LBGA	64-LBGA (11x13)
CAT93C46V-TE13	onsemi	IC EEPROM 1KBIT MICROWIRE 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kbit Memory Interface: Microwire Clock Frequency: 2 MHz Write Cycle Time - Word, Page: - Access Time: 250 ns Voltage - Supply: 2.5V ~ 6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	EEPROM	EEPROM	1Kbit	Microwire	2 MHz	-	250 ns	2.5V ~ 6V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
SM662PXB-BESS	Silicon Motion, Inc.	IC FLASH 80GBIT EMMC 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 80Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-TBGA Supplier Device Package: 153-BGA (11.5x13)	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	80Gbit	eMMC	-	-	-	-	-25°C ~ 85°C	Surface Mount	153-TBGA	153-BGA (11.5x13)
S27KL0643DPBHI023	Infineon Technologies	IC PSRAM 64MBIT SPI/OCTAL 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 64Mbit Memory Interface: SPI - Octal I/O Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 36ns Access Time: 36 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	패키지: -	Request a Quote	PSRAM	PSRAM (Pseudo SRAM)	64Mbit	SPI - Octal I/O	166 MHz	36ns	36 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
AT25SF161-DWF	Renesas Electronics Corporation	IC FLASH 16MBIT SPI/QUAD WAFER Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 5µs, 5ms Access Time: - Voltage - Supply: 2.5V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Wafer	패키지: -	Request a Quote	FLASH	FLASH - NOR	16Mbit	SPI - Quad I/O	104 MHz	5µs, 5ms	-	2.5V ~ 3.6V	-40°C ~ 85°C (TC)	Surface Mount	Die	Wafer
P770011C-F9C375	Infineon Technologies	IC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
AS4C512M16D3LB-12BCNTR	Alliance Memory, Inc.	IC DRAM 8GBIT PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (13.5x9)	패키지: -	Request a Quote	DRAM	SDRAM - DDR3L	8Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (13.5x9)
MTFC64GBCAQTC-AAT-ES	Micron Technology Inc.	EMMC 512G LFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

EDB2432BCPA-8D-F-D

Micron Technology Inc.

IC SDRAM 2GBIT 400MHZ 168FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-WFBGA
Supplier Device Package: 168-FBGA (12x12)

패키지: 168-WFBGA

재고3,152

DRAM

SDRAM - Mobile LPDDR2

2Gb (64M x 32)

Parallel

400MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

Surface Mount

168-WFBGA

168-FBGA (12x12)

AT45DB161E-SHD-T

Microchip Technology

IC FLASH 16MBIT 85MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (528 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 8µs, 6ms
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.209", 5.30mm Width)

재고2,243,892

FLASH

16Mb (528 Bytes x 4096 pages)

SPI

85MHz

8µs, 6ms

-

2.5 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

M24128-BFCS6TP/A

STMicroelectronics

IC EEPROM 128KBIT 400KHZ 8WLCSP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFBGA
Supplier Device Package: 8-WLCSP (1.785x1.38)

패키지: 8-UFBGA

재고5,776

EEPROM

128Kb (16K x 8)

I2C

1MHz

5ms

450ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFBGA

8-WLCSP (1.785x1.38)

IDT70T3319S133DD

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 144TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 2.4 V ~ 2.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Supplier Device Package: 144-TQFP (20x20)

패키지: 144-LQFP Exposed Pad

재고2,304

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (256K x 18)

Parallel

133MHz

-

4.2ns

2.4 V ~ 2.6 V

0°C ~ 70°C (TA)

Surface Mount

144-LQFP Exposed Pad

144-TQFP (20x20)

AT25256AN-10SU-2.7

Microchip Technology

IC EEPROM 256KBIT 20MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고19,788

EEPROM

256Kb (32K x 8)

SPI

20MHz

5ms

-

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

7143LA55GB

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 55NS 68PGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (2K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 68-BPGA
Supplier Device Package: 68-PGA (29.46x29.46)

패키지: 68-BPGA

재고6,496

SRAM

SRAM - Dual Port, Asynchronous

32Kb (2K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

68-BPGA

68-PGA (29.46x29.46)

S30ML512P50TFI033

Cypress Semiconductor Corp

IC FLASH MEMORY 48TSOP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,856

-

W94AD2KBJX5E

Winbond Electronics

IC SDRAM 1GBIT 200MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 1Gb (32M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-VFBGA (8x13)

패키지: 90-TFBGA

재고7,200

DRAM

SDRAM - Mobile LPDDR

1Gb (32M x 32)

Parallel

200MHz

15ns

5ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TC)

Surface Mount

90-TFBGA

90-VFBGA (8x13)

SST26WF016BT-104I/CS

Microchip Technology

IC FLASH 16MBIT 104MHZ 8CSP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFBGA, CSPBGA
Supplier Device Package: 8-CSP

패키지: 8-UFBGA, CSPBGA

재고4,544

FLASH

16Mb (2M x 8)

SPI - Quad I/O

104MHz

1.5ms

-

1.65 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFBGA, CSPBGA

8-CSP

25LC256T-E/MF

Microchip Technology

IC EEPROM 256KBIT 10MHZ 8DFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN-S (6x5)

패키지: 8-VDFN Exposed Pad

재고5,952

EEPROM

256Kb (32K x 8)

SPI

10MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-DFN-S (6x5)

24VL025T/MS

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.5 V ~ 3.6 V
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고7,632

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

1.5 V ~ 3.6 V

-20°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

24LC128T-I/MNY

Microchip Technology

IC EEPROM 128KBIT 400KHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

패키지: 8-WFDFN Exposed Pad

재고6,192

EEPROM

128Kb (16K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

93LC46A-I/S15K

Microchip Technology

IC EEPROM 1K SPI 2MHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고5,184

EEPROM

1Kb (128 x 8)

SPI

2MHz

6ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

S29GL01GT11TFIV40

Cypress Semiconductor Corp

IC 1 GB FLASH MEMORY

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,120

-

S29GL512S11FHIV10

Cypress Semiconductor Corp

IC FLASH 512M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-Fortified BGA (13x11)

패키지: 64-LBGA

재고6,080

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

-

60ns

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-Fortified BGA (13x11)

S29GL256P11FFI022

Cypress Semiconductor Corp

IC FLASH 256M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

패키지: 64-LBGA

재고7,952

FLASH

FLASH - NOR

256Mb (32M x 8)

Parallel

-

110ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

W632GU8MB-15 TR

Winbond Electronics

IC DRAM 2G PARALLEL 667MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-VFBGA (8x10.5)

패키지: 78-VFBGA

재고7,824

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

667MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-VFBGA

78-VFBGA (8x10.5)

MT53D2G32D8QD-053 WT ES:E TR

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA 8DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,328

-

MT53D2048M32D8QD-046 WT ES:D TR

Micron Technology Inc.

IC DRAM 64G 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gb (2G x 32)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,968

DRAM

SDRAM - Mobile LPDDR4

64Gb (2G x 32)

-

2133MHz

-

1.1V

-30°C ~ 85°C (TC)

-

7134SA70JI

IDT, Integrated Device Technology Inc

IC SRAM 32K PARALLEL 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

패키지: 52-LCC (J-Lead)

재고4,432

SRAM

SRAM - Dual Port, Asynchronous

32Kb (4K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

MT28EW01GABA1HPC-0AAT

Micron Technology Inc.

IC FLASH 1G PARALLEL 64LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8, 64M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 105ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-LBGA (11x13)

패키지: 64-LBGA

재고4,224

FLASH

FLASH - NOR

1Gb (128M x 8, 64M x 16)

Parallel

-

60ns

105ns

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

64-LBGA

64-LBGA (11x13)

CAT93C46V-TE13

onsemi

IC EEPROM 1KBIT MICROWIRE 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kbit
Memory Interface: Microwire
Clock Frequency: 2 MHz
Write Cycle Time - Word, Page: -
Access Time: 250 ns
Voltage - Supply: 2.5V ~ 6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

EEPROM

1Kbit

Microwire

2 MHz

-

250 ns

2.5V ~ 6V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

SM662PXB-BESS

Silicon Motion, Inc.

IC FLASH 80GBIT EMMC 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 80Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-TBGA
Supplier Device Package: 153-BGA (11.5x13)

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

80Gbit

eMMC

-

-25°C ~ 85°C

Surface Mount

153-TBGA

153-BGA (11.5x13)

S27KL0643DPBHI023

Infineon Technologies

IC PSRAM 64MBIT SPI/OCTAL 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 64Mbit
Memory Interface: SPI - Octal I/O
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 36ns
Access Time: 36 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

패키지: -

Request a Quote

PSRAM

PSRAM (Pseudo SRAM)

64Mbit

SPI - Octal I/O

166 MHz

36ns

36 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

AT25SF161-DWF

Renesas Electronics Corporation

IC FLASH 16MBIT SPI/QUAD WAFER

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 5µs, 5ms
Access Time: -
Voltage - Supply: 2.5V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Wafer

패키지: -

Request a Quote

FLASH

FLASH - NOR

16Mbit

SPI - Quad I/O

104 MHz

5µs, 5ms

-

2.5V ~ 3.6V

-40°C ~ 85°C (TC)

Surface Mount

Die

Wafer

P770011C-F9C375

Infineon Technologies

IC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

AS4C512M16D3LB-12BCNTR

Alliance Memory, Inc.

IC DRAM 8GBIT PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13.5x9)

패키지: -

Request a Quote

DRAM

SDRAM - DDR3L

8Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (13.5x9)

MTFC64GBCAQTC-AAT-ES

Micron Technology Inc.

EMMC 512G LFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-