페이지 798 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT46V64M8CV-5B:J TR	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-FBGA (8x12.5)	패키지: 60-VFBGA	재고5,184	DRAM	SDRAM - DDR	512Mb (64M x 8)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	60-VFBGA	60-FBGA (8x12.5)
AS4C4M16S-6BIN	Alliance Memory, Inc.	IC SDRAM 64MBIT 166MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 2ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	패키지: 54-TFBGA	재고5,392	DRAM	SDRAM	64Mb (4M x 16)	Parallel	166MHz	2ns	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IDT7164L20TP	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 20NS 28DIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 28-DIP (0.300", 7.62mm) Supplier Device Package: 28-PDIP	패키지: 28-DIP (0.300", 7.62mm)	재고5,072	SRAM	SRAM - Asynchronous	64Kb (8K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	28-DIP (0.300", 7.62mm)	28-PDIP
MT48H16M32L2F5-10 IT TR	Micron Technology Inc.	IC SDRAM 512MBIT 100MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	패키지: 90-VFBGA	재고5,168	DRAM	SDRAM - Mobile LPSDR	512Mb (16M x 32)	Parallel	100MHz	-	7.5ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
AT49BV002AN-70JU	Microchip Technology	IC FLASH 2MBIT 70NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고9,540	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
MT48LC4M32B2B5-7 IT:G TR	Micron Technology Inc.	IC SDRAM 128MBIT 143MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: 14ns Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	패키지: 90-VFBGA	재고3,872	DRAM	SDRAM	128Mb (4M x 32)	Parallel	143MHz	14ns	5.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
M27C1001-12B1	STMicroelectronics	IC OTP 1MBIT 120NS 32DIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-PDIP	패키지: 32-DIP (0.600", 15.24mm)	재고15,804	EPROM	EPROM - OTP	1Mb (128K x 8)	Parallel	-	-	120ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	32-DIP (0.600", 15.24mm)	32-PDIP
LH28F160S5HNS-L70	Sharp Microelectronics	IC FLASH 16MBIT 70NS 56SSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (2M x 8, 1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-SOP (0.524", 13.30mm) Supplier Device Package: 56-SSOP	패키지: 56-SOP (0.524", 13.30mm)	재고5,200	FLASH	FLASH	16Mb (2M x 8, 1M x 16)	Parallel	-	70ns	70ns	4.75 V ~ 5.25 V	-40°C ~ 85°C (TA)	Surface Mount	56-SOP (0.524", 13.30mm)	56-SSOP
AT27LV256A-70TC	Microchip Technology	IC OTP 256KBIT 70NS 28TSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 70ns Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP	패키지: 28-TSSOP (0.465", 11.80mm Width)	재고3,440	EPROM	EPROM - OTP	256Kb (32K x 8)	Parallel	-	-	70ns	3 V ~ 3.6 V, 4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP
AT27C256R-55PI	Microchip Technology	IC OTP 256KBIT 55NS 28DIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP	패키지: 28-DIP (0.600", 15.24mm)	재고4,864	EPROM	EPROM - OTP	256Kb (32K x 8)	Parallel	-	-	55ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	28-DIP (0.600", 15.24mm)	28-PDIP
AT24C01-10SC-1.8	Microchip Technology	IC EEPROM 1KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 10ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,224	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	10ms	900ns	1.8 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
71T75602S133BGG8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 133MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고3,120	SRAM	SRAM - Synchronous ZBT	18Mb (512K x 36)	Parallel	133MHz	-	4.2ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS42S16320D-7BLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 143MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x13)	패키지: 54-TFBGA	재고2,592	DRAM	SDRAM	512Mb (32M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x13)
7130LA25PF8	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 25NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	패키지: 64-LQFP	재고4,064	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
71V416L15BEG	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 15NS 48CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-CABGA (9x9)	패키지: 48-TFBGA	재고3,936	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-TFBGA	48-CABGA (9x9)
MX29GL640EBTI-90G	Macronix	IC FLASH 64MBIT 90NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고18,840	FLASH	FLASH - NOR	64Mb (8M x 8)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
CY62148G-45SXI	Cypress Semiconductor Corp	IC SRAM 4MB 45NS 32SOIC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.445", 11.30mm Width) Supplier Device Package: 32-SOIC	패키지: 32-SOIC (0.445", 11.30mm Width)	재고6,144	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-SOIC (0.445", 11.30mm Width)	32-SOIC
IS61WV102416DALL-10TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 16M PARALLEL 48TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 1.65 V ~ 2.2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: 48-TFSOP (0.724", 18.40mm Width)	재고7,808	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	1.65 V ~ 2.2 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
IS61NVP102418-250B3	ISSI, Integrated Silicon Solution Inc	IC SRAM 18M PARALLEL 165TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: 2.6ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-TFBGA (13x15)	패키지: 165-TBGA	재고6,208	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	250MHz	-	2.6ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-TFBGA (13x15)
AS4C16M32MS-6BINTR	Alliance Memory, Inc.	IC DRAM 512M PARALLEL 90FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile SDRAM Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-FBGA (8x13)	패키지: 90-VFBGA	재고5,296	DRAM	SDRAM - Mobile SDRAM	512Mb (16M x 32)	Parallel	166MHz	15ns	5.4ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-FBGA (8x13)
BR24H256F-5ACE2	Rohm Semiconductor	IC EEPROM 256KBIT I2C 1MHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 3.5ms Access Time: - Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	패키지: -	재고21,978	EEPROM	EEPROM	256Kbit	I2C	1 MHz	3.5ms	-	1.7V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
70V18S12PF8	Renesas Electronics Corporation	IC RAM DUAL PORT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CY7C1520AV18-200BZI	Cypress Semiconductor Corp	IC SRAM 72MBIT PARALLEL 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 72Mbit Memory Interface: Parallel Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	패키지: -	Request a Quote	SRAM	SRAM - Synchronous, DDR II	72Mbit	Parallel	200 MHz	-	-	1.7V ~ 1.9V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
IS49NLC18320A-25EWBLI	ISSI, Integrated Silicon Solution Inc	RLDRAM2 Memory, 576Mbit, x18, Co Memory Type: Volatile Memory Format: DRAM Technology: RLDRAM 2 Memory Size: 576Mbit Memory Interface: HSTL Clock Frequency: 400 MHz Write Cycle Time - Word, Page: - Access Time: 15 ns Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-TWBGA (11x18.5)	패키지: -	Request a Quote	DRAM	RLDRAM 2	576Mbit	HSTL	400 MHz	-	15 ns	1.7V ~ 1.9V	-40°C ~ 85°C (TA)	Surface Mount	144-TFBGA	144-TWBGA (11x18.5)
MT62F768M32D2DS-023-AAT-C	Micron Technology Inc.	LPDDR5 24GBIT 32 315/315 TFBGA 2 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5X Memory Size: 24Gbit Memory Interface: LVSTL Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.01V ~ 1.12V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 315-TFBGA Supplier Device Package: 315-TFBGA (12.4x15)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5X	24Gbit	LVSTL	4.266 GHz	-	-	1.01V ~ 1.12V	-40°C ~ 105°C	Surface Mount	315-TFBGA	315-TFBGA (12.4x15)
NDB26PFC-4DET	Insignis Technology Corporation	DDR2 2GB X16 FBGA 8X12.5(X1.2) 8 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gbit Memory Interface: SSTL_18 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (8x12.5)	패키지: -	Request a Quote	DRAM	SDRAM - DDR2	2Gbit	SSTL_18	400 MHz	-	-	1.7V ~ 1.9V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-FBGA (8x12.5)
FT24C02A-KSG-T	Fremont Micro Devices Ltd	IC EEPROM 2KBIT I2C 1MHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kbit Memory Interface: I2C Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 5ms Access Time: 550 ns Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	패키지: -	Request a Quote	EEPROM	EEPROM	2Kbit	I2C	1 MHz	5ms	550 ns	1.8V ~ 5.5V	-40°C ~ 85°C	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
16-4099-01	Infineon Technologies	IC GATE NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

MT46V64M8CV-5B:J TR

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Supplier Device Package: 60-FBGA (8x12.5)

패키지: 60-VFBGA

재고5,184

DRAM

SDRAM - DDR

512Mb (64M x 8)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

60-VFBGA

60-FBGA (8x12.5)

AS4C4M16S-6BIN

Alliance Memory, Inc.

IC SDRAM 64MBIT 166MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

패키지: 54-TFBGA

재고5,392

DRAM

SDRAM

64Mb (4M x 16)

Parallel

166MHz

2ns

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IDT7164L20TP

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 20NS 28DIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.300", 7.62mm)
Supplier Device Package: 28-PDIP

패키지: 28-DIP (0.300", 7.62mm)

재고5,072

SRAM

SRAM - Asynchronous

64Kb (8K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

28-DIP (0.300", 7.62mm)

28-PDIP

MT48H16M32L2F5-10 IT TR

Micron Technology Inc.

IC SDRAM 512MBIT 100MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

패키지: 90-VFBGA

재고5,168

DRAM

SDRAM - Mobile LPSDR

512Mb (16M x 32)

Parallel

100MHz

-

7.5ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

AT49BV002AN-70JU

Microchip Technology

IC FLASH 2MBIT 70NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고9,540

FLASH

2Mb (256K x 8)

Parallel

-

50µs

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

MT48LC4M32B2B5-7 IT:G TR

Micron Technology Inc.

IC SDRAM 128MBIT 143MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: 14ns
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

패키지: 90-VFBGA

재고3,872

DRAM

SDRAM

128Mb (4M x 32)

Parallel

143MHz

14ns

5.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

M27C1001-12B1

STMicroelectronics

IC OTP 1MBIT 120NS 32DIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-PDIP

패키지: 32-DIP (0.600", 15.24mm)

재고15,804

EPROM

EPROM - OTP

1Mb (128K x 8)

Parallel

-

120ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

32-DIP (0.600", 15.24mm)

32-PDIP

LH28F160S5HNS-L70

Sharp Microelectronics

IC FLASH 16MBIT 70NS 56SSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8, 1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-SOP (0.524", 13.30mm)
Supplier Device Package: 56-SSOP

패키지: 56-SOP (0.524", 13.30mm)

재고5,200

FLASH

16Mb (2M x 8, 1M x 16)

Parallel

-

70ns

4.75 V ~ 5.25 V

-40°C ~ 85°C (TA)

Surface Mount

56-SOP (0.524", 13.30mm)

56-SSOP

AT27LV256A-70TC

Microchip Technology

IC OTP 256KBIT 70NS 28TSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 70ns
Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP

패키지: 28-TSSOP (0.465", 11.80mm Width)

재고3,440

EPROM

EPROM - OTP

256Kb (32K x 8)

Parallel

-

70ns

3 V ~ 3.6 V, 4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP

AT27C256R-55PI

Microchip Technology

IC OTP 256KBIT 55NS 28DIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP

패키지: 28-DIP (0.600", 15.24mm)

재고4,864

EPROM

EPROM - OTP

256Kb (32K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

28-DIP (0.600", 15.24mm)

28-PDIP

AT24C01-10SC-1.8

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,224

EEPROM

1Kb (128 x 8)

I2C

400kHz

10ms

900ns

1.8 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

71T75602S133BGG8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 133MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고3,120

SRAM

SRAM - Synchronous ZBT

18Mb (512K x 36)

Parallel

133MHz

-

4.2ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS42S16320D-7BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 143MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x13)

패키지: 54-TFBGA

재고2,592

DRAM

SDRAM

512Mb (32M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x13)

7130LA25PF8

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 25NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

패키지: 64-LQFP

재고4,064

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

71V416L15BEG

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 15NS 48CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-CABGA (9x9)

패키지: 48-TFBGA

재고3,936

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

15ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-TFBGA

48-CABGA (9x9)

MX29GL640EBTI-90G

Macronix

IC FLASH 64MBIT 90NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고18,840

FLASH

FLASH - NOR

64Mb (8M x 8)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

CY62148G-45SXI

Cypress Semiconductor Corp

IC SRAM 4MB 45NS 32SOIC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Supplier Device Package: 32-SOIC

패키지: 32-SOIC (0.445", 11.30mm Width)

재고6,144

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-SOIC (0.445", 11.30mm Width)

32-SOIC

IS61WV102416DALL-10TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 16M PARALLEL 48TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 1.65 V ~ 2.2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: 48-TFSOP (0.724", 18.40mm Width)

재고7,808

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

1.65 V ~ 2.2 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

IS61NVP102418-250B3

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 165TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: 2.6ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-TFBGA (13x15)

패키지: 165-TBGA

재고6,208

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

250MHz

-

2.6ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-TFBGA (13x15)

AS4C16M32MS-6BINTR

Alliance Memory, Inc.

IC DRAM 512M PARALLEL 90FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile SDRAM
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-FBGA (8x13)

패키지: 90-VFBGA

재고5,296

DRAM

SDRAM - Mobile SDRAM

512Mb (16M x 32)

Parallel

166MHz

15ns

5.4ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-FBGA (8x13)

BR24H256F-5ACE2

Rohm Semiconductor

IC EEPROM 256KBIT I2C 1MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 3.5ms
Access Time: -
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

패키지: -

재고21,978

EEPROM

256Kbit

I2C

1 MHz

3.5ms

-

1.7V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

70V18S12PF8

Renesas Electronics Corporation

IC RAM DUAL PORT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

CY7C1520AV18-200BZI

Cypress Semiconductor Corp

IC SRAM 72MBIT PARALLEL 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 72Mbit
Memory Interface: Parallel
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

패키지: -

Request a Quote

SRAM

SRAM - Synchronous, DDR II

72Mbit

Parallel

200 MHz

-

1.7V ~ 1.9V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

IS49NLC18320A-25EWBLI

ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 576Mbit, x18, Co

Memory Type: Volatile
Memory Format: DRAM
Technology: RLDRAM 2
Memory Size: 576Mbit
Memory Interface: HSTL
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: -
Access Time: 15 ns
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-TWBGA (11x18.5)

패키지: -

Request a Quote

DRAM

RLDRAM 2

576Mbit

HSTL

400 MHz

-

15 ns

1.7V ~ 1.9V

-40°C ~ 85°C (TA)

Surface Mount

144-TFBGA

144-TWBGA (11x18.5)

MT62F768M32D2DS-023-AAT-C

Micron Technology Inc.

LPDDR5 24GBIT 32 315/315 TFBGA 2

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5X
Memory Size: 24Gbit
Memory Interface: LVSTL
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.01V ~ 1.12V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 315-TFBGA
Supplier Device Package: 315-TFBGA (12.4x15)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5X

24Gbit

LVSTL

4.266 GHz

-

1.01V ~ 1.12V

-40°C ~ 105°C

Surface Mount

315-TFBGA

315-TFBGA (12.4x15)

NDB26PFC-4DET

Insignis Technology Corporation

DDR2 2GB X16 FBGA 8X12.5(X1.2) 8

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gbit
Memory Interface: SSTL_18
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (8x12.5)

패키지: -

Request a Quote

DRAM

SDRAM - DDR2

2Gbit

SSTL_18

400 MHz

-

1.7V ~ 1.9V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-FBGA (8x12.5)

FT24C02A-KSG-T

Fremont Micro Devices Ltd

IC EEPROM 2KBIT I2C 1MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kbit
Memory Interface: I2C
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550 ns
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

패키지: -

Request a Quote

EEPROM

2Kbit

I2C

1 MHz

5ms

550 ns

1.8V ~ 5.5V

-40°C ~ 85°C

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

16-4099-01

Infineon Technologies

IC GATE NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-