페이지 844 - 메모리 | 집적 회로(IC) | Heisener Electronics
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제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT25TL512BAA1ESF-0AAT
Micron Technology Inc.

IC SERIAL NOR SLC SOIC

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,304
-
-
-
-
-
-
-
-
-
-
-
-
71V3577YS85PFG
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8.5NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 87MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 8.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고7,024
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
87MHz
-
8.5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
M29F200BT70N1
Micron Technology Inc.

IC FLASH 2MBIT 70NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 2Mb (256K x 8, 128K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고7,888
FLASH
FLASH - NOR
2Mb (256K x 8, 128K x 16)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
hot CY7C1357C-100AXCT
Cypress Semiconductor Corp

IC SRAM 9MBIT 100MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x20)
패키지: 100-LQFP
재고13,824
SRAM
SRAM - Synchronous
9Mb (512K x 18)
Parallel
100MHz
-
7.5ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x20)
AT93C46C-10PI-2.7
Microchip Technology

IC EEPROM 1KBIT 2MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8 , 64 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고2,480
EEPROM
EEPROM
1Kb (128 x 8 , 64 x 16)
SPI
2MHz
10ms
-
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
24AA01/P
Microchip Technology

IC EEPROM 1KBIT 400KHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 3500ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고4,992
EEPROM
EEPROM
1Kb (128 x 8)
I2C
400kHz
5ms
3500ns
1.7 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
7007L35G
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 35NS 68PGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 68-BPGA
  • Supplier Device Package: 68-PGA (29.46x29.46)
패키지: 68-BPGA
재고3,456
SRAM
SRAM - Dual Port, Asynchronous
256Kb (32K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
68-BPGA
68-PGA (29.46x29.46)
7014S15PF
IDT, Integrated Device Technology Inc

IC SRAM 36KBIT 15NS 64TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 36Kb (4K x 9)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (14x14)
패키지: 64-LQFP
재고3,088
SRAM
SRAM - Dual Port, Asynchronous
36Kb (4K x 9)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
64-LQFP
64-TQFP (14x14)
IS42SM16800H-75BLI
ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 133MHZ 54BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 128Mb (8M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-TFBGA (8x8)
패키지: 54-TFBGA
재고2,176
DRAM
SDRAM - Mobile
128Mb (8M x 16)
Parallel
133MHz
-
6ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TFBGA
54-TFBGA (8x8)
hot AS7C34096A-10TIN
Alliance Memory, Inc.

IC SRAM 4MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: 44-TSOP (0.400", 10.16mm Width)
재고8,328
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
AS7C1026B-12TCNTR
Alliance Memory, Inc.

IC SRAM 1MBIT 12NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: 44-TSOP (0.400", 10.16mm Width)
재고2,400
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
12ns
12ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
hot 24LC512T-I/ST14
Microchip Technology

IC EEPROM 512KBIT 400KHZ 14TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 14-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 14-TSSOP
패키지: 14-TSSOP (0.173", 4.40mm Width)
재고245,868
EEPROM
EEPROM
512Kb (64K x 8)
I2C
400kHz
5ms
900ns
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
14-TSSOP (0.173", 4.40mm Width)
14-TSSOP
93LC66A-E/SN
Microchip Technology

IC EEPROM 4KBIT 2MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (512 x 8)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,536
EEPROM
EEPROM
4Kb (512 x 8)
SPI
2MHz
6ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IS61LF51218B-7.5TQLI
ISSI, Integrated Silicon Solution Inc

IC SRAM 9MBIT 7.5NS 100LQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 117MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-LQFP (14x20)
패키지: 100-LQFP
재고6,560
SRAM
SRAM - Synchronous
9Mb (512K x 18)
Parallel
117MHz
-
7.5ns
3.135 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-LQFP (14x20)
24AA014T-I/MNY
Microchip Technology

IC EEPROM 1KBIT 400KHZ 8TDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kb (128 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (2x3)
패키지: 8-WFDFN Exposed Pad
재고6,192
EEPROM
EEPROM
1Kb (128 x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-WFDFN Exposed Pad
8-TDFN (2x3)
hot M95080-WDW6TP
STMicroelectronics

IC EEPROM 8KBIT 10MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고92,232
EEPROM
EEPROM
8Kb (1K x 8)
SPI
20MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
S25FL128SAGBHIA13
Cypress Semiconductor Corp

IC FLASH 128M SPI 133MHZ 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
패키지: 24-TBGA
재고2,928
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI - Quad I/O
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
24-TBGA
24-BGA (8x6)
S25FL128LAGMFA010
Cypress Semiconductor Corp

IC 128 MB FLASH MEMORY

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.209", 5.30mm Width)
재고34,122
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI - Quad I/O, QPI
133MHz
-
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
MT53B768M64D8BV-062 WT ES:B
Micron Technology Inc.

IC DRAM 48G 1600MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 48Gb (768M x 64)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,112
DRAM
SDRAM - Mobile LPDDR4
48Gb (768M x 64)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
MT29F6T08ETHBBM5-3R:B
Micron Technology Inc.

IC FLASH 6T PARALLEL 333MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 6Tb (768G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,680
FLASH
FLASH - NAND
6Tb (768G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
AT25XE021A-UUN-T
Renesas Electronics Corporation

2 MBIT, WIDE VCC (1.65V TO 3.6V)

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 2Mbit
  • Memory Interface: SPI - Dual I/O
  • Clock Frequency: 70 MHz
  • Write Cycle Time - Word, Page: 12µs, 3ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.65V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFBGA, WLCSP
  • Supplier Device Package: 8-WLCSP (1.9x1.4)
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
2Mbit
SPI - Dual I/O
70 MHz
12µs, 3ms
6 ns
1.65V ~ 3.6V
-40°C ~ 85°C (TC)
Surface Mount
8-UFBGA, WLCSP
8-WLCSP (1.9x1.4)
MTFC128GASAQJP-AAT
Micron Technology Inc.

USSD 1T

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 1Tbit
  • Memory Interface: eMMC_5.1
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-VFBGA
  • Supplier Device Package: 153-VFBGA (11.5x13)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
1Tbit
eMMC_5.1
200 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
153-VFBGA
153-VFBGA (11.5x13)
AT25128AW-SQ27CL
Atmel

IC EEPROM 128KBIT SPI 3MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 128Kbit
  • Memory Interface: SPI
  • Clock Frequency: 3 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
Request a Quote
EEPROM
EEPROM
128Kbit
SPI
3 MHz
5ms
-
4.5V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
W25N02KVZEIR
Winbond Electronics

IC FLASH 2GBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 700µs
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
패키지: -
Request a Quote
FLASH
FLASH - NAND (SLC)
2Gbit
SPI - Quad I/O
104 MHz
700µs
7 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)
EM68A16CBQC-25IH
Etron Technology, Inc.

IC DRAM 256MBIT PARALLEL 84FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 256Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400 ps
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-FBGA (8x12.5)
패키지: -
재고6,804
DRAM
SDRAM - DDR2
256Mbit
Parallel
400 MHz
15ns
400 ps
1.7V ~ 1.9V
-40°C ~ 95°C (TC)
Surface Mount
84-TFBGA
84-FBGA (8x12.5)
BY25Q16AWSIG-T
BYTe Semiconductor

16 MBIT, WIDE VCC (1.7V TO 3.6V)

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 16Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 100 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 12 ns
  • Voltage - Supply: 1.65V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
16Mbit
SPI - Quad I/O
100 MHz
3ms
12 ns
1.65V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOP
MB85RS2MTAPNF-G-BDE1
Fujitsu Semiconductor Memory Solution

2MBIT FRAM WITH SPI SERIAL INTER

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 2Mbit
  • Memory Interface: SPI
  • Clock Frequency: 40 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 9 ns
  • Voltage - Supply: 1.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
패키지: -
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FRAM
FRAM (Ferroelectric RAM)
2Mbit
SPI
40 MHz
-
9 ns
1.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
S25FL512SAGBHBB13
Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 24BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (6x8)
패키지: -
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FLASH
FLASH - NOR
512Mbit
SPI - Quad I/O
133 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-BGA (6x8)