페이지 849 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F256G08AUCABH3-10IT:A TR	Micron Technology Inc.	IC FLASH 256GBIT 100MHZ 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,520	FLASH	FLASH - NAND	256Gb (32G x 8)	Parallel	100MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
CY7C1399BNL-15ZXC	Cypress Semiconductor Corp	IC SRAM 256KBIT 15NS 28TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP I	패키지: 28-TSSOP (0.465", 11.80mm Width)	재고7,680	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP I
MT48H8M32LFB5-10 IT	Micron Technology Inc.	IC SDRAM 256MBIT 100MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: 15ns Access Time: 7ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	패키지: 90-VFBGA	재고4,640	DRAM	SDRAM - Mobile LPSDR	256Mb (8M x 32)	Parallel	100MHz	15ns	7ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
CY7C2565XV18-633BZC	Cypress Semiconductor Corp	IC SRAM 72MBIT 633MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II+ Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 633MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	패키지: 165-LBGA	재고6,736	SRAM	SRAM - Synchronous, QDR II+	72Mb (2M x 36)	Parallel	633MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
AT28C256-15UM/883	Microchip Technology	IC EEPROM 256KBIT 150NS 28CPGA Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Through Hole Package / Case: 28-BCPGA Supplier Device Package: 28-CPGA (13.55x15.06)	패키지: 28-BCPGA	재고6,992	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	150ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TC)	Through Hole	28-BCPGA	28-CPGA (13.55x15.06)
CY7C1061GE30-10ZSXI	Cypress Semiconductor Corp	IC SRAM 16MBIT 10NS 54TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고5,200	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	10ns	10ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
7133LA20PFG	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 20NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (2K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고5,472	SRAM	SRAM - Dual Port, Asynchronous	32Kb (2K x 16)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
71V65803S100BG	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 100MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고3,408	SRAM	SRAM - Synchronous ZBT	9Mb (512K x 18)	Parallel	100MHz	-	5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
71V632S6PFG	IDT, Integrated Device Technology Inc	IC SRAM 2MBIT 6NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 2Mb (64K x 32) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 3.135 V ~ 3.63 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고3,360	SRAM	SRAM - Synchronous	2Mb (64K x 32)	Parallel	83MHz	-	6ns	3.135 V ~ 3.63 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
W29GL256SL9B	Winbond Electronics	IC FLASH 256MBIT 90NS 64LFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LFBGA (11x13)	패키지: 64-LBGA	재고3,616	FLASH	FLASH - NOR	256Mb (16M x 16)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-LFBGA (11x13)
M95020-RDW6TP	STMicroelectronics	IC EEPROM 2KBIT 5MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고34,200	EEPROM	EEPROM	2Kb (256 x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
S25FL256SAGBHIA10	Cypress Semiconductor Corp	IC FLASH 256MBIT 133MHZ 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (32M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	패키지: 24-TBGA	재고11,952	FLASH	FLASH - NOR	256Mb (32M x 8)	SPI - Quad I/O	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
EDB2432B4MA-1DIT-F-D	Micron Technology Inc.	IC DRAM 2G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,704	DRAM	SDRAM - Mobile LPDDR2	2Gb (64M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	-	-	-
NM27LV010T250	ON Semiconductor	IC EPROM 1M PARALLEL 32TSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 250ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	패키지: 32-TFSOP (0.724", 18.40mm Width)	재고2,432	EPROM	EPROM - OTP	1Mb (128K x 8)	Parallel	-	-	250ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
MT44K32M36RB-083E:A TR	Micron Technology Inc.	IC DRAM 1.125G PARALLEL 1200MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 1.125Gb (32Mb x 36) Memory Interface: Parallel Clock Frequency: 1200MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,992	DRAM	DRAM	1.125Gb (32Mb x 36)	Parallel	1200MHz	-	7.5ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	-	-	-
MT29F2G01ABAGDSF-AAT:G TR	Micron Technology Inc.	IC FLASH 2G SPI SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 2Gb (2G x 1) Memory Interface: SPI Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,056	FLASH	FLASH - NAND	2Gb (2G x 1)	SPI	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
AT28C010-12TU-T	Microchip Technology	IC EEPROM 1M PARALLEL 32TSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.465", 11.80mm Width) Supplier Device Package: 32-TSOP	패키지: 32-TFSOP (0.465", 11.80mm Width)	재고16,446	EEPROM	EEPROM	1Mb (128K x 8)	Parallel	-	10ms	120ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.465", 11.80mm Width)	32-TSOP
MT58L256L18F1T-10	Micron Technology Inc.	IC SRAM 4MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 66 MHz Write Cycle Time - Word, Page: - Access Time: 10 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	패키지: -	Request a Quote	SRAM	SRAM - Standard	4Mbit	Parallel	66 MHz	-	10 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
UT61L1024LS-12	Utron	SRAM ASYNC FAST 1M 128X8 5V 32T Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: - Voltage - Supply: 5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 32-TSOP	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	1Mbit	Parallel	-	12ns	-	5V	0°C ~ 70°C (TA)	Surface Mount	-	32-TSOP
N25Q064A13ESF40F	Alliance Memory, Inc.	IC FLASH 64MBIT SPI 16SOP2 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: SPI Clock Frequency: 108 MHz Write Cycle Time - Word, Page: 5ms Access Time: 5 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP2	패키지: -	재고2,013	FLASH	FLASH - NOR	64Mbit	SPI	108 MHz	5ms	5 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP2
CY7C1011CV33-10ZXC	Cypress Semiconductor Corp	IC SRAM 2MBIT PARALLEL 32TSOP II Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.400", 10.16mm Width) Supplier Device Package: 32-TSOP II	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	2Mbit	Parallel	-	10ns	10 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	32-SOIC (0.400", 10.16mm Width)	32-TSOP II
70261S20PFG8	Renesas Electronics Corporation	IC SRAM 256KBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: -	Request a Quote	SRAM	SRAM - Dual Port, Asynchronous	256Kbit	Parallel	-	20ns	20 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MT62F1G64D8CH-036-WT-A-TR	Micron Technology Inc.	IC FLASH 64GBIT 2.75GHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: SDRAM - Mobile LPDDR5 Memory Size: 64Gbit Memory Interface: - Clock Frequency: 2.75 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -25°C ~ 85°C Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	FLASH	SDRAM - Mobile LPDDR5	64Gbit	-	2.75 GHz	-	-	1.05V	-25°C ~ 85°C	-	-	-
MX25U25645GXDI54	Macronix	MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 256Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 60µs, 750µs Access Time: 4 ns Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA, CSPBGA Supplier Device Package: 24-CSPBGA (6x8)	패키지: -	Request a Quote	FLASH	FLASH - NOR (SLC)	256Mbit	SPI - Quad I/O, QPI, DTR	166 MHz	60µs, 750µs	4 ns	1.65V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA, CSPBGA	24-CSPBGA (6x8)
W959D8NFYA4I-TR	Winbond Electronics	512MB HYPERRAM X8, 250MHZ, IND T Memory Type: Volatile Memory Format: DRAM Technology: HyperRAM Memory Size: 512Mbit Memory Interface: HyperBus Clock Frequency: 250 MHz Write Cycle Time - Word, Page: 35ns Access Time: 28 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (8x6)	패키지: -	Request a Quote	DRAM	HyperRAM	512Mbit	HyperBus	250 MHz	35ns	28 ns	1.7V ~ 2V	-40°C ~ 85°C (TC)	Surface Mount	24-TBGA	24-TFBGA (8x6)
IS42S83200L-7TL	ISSI, Integrated Silicon Solution Inc	IC DRAM 256MBIT PAR 54TSOP II Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mbit Memory Interface: LVTTL Clock Frequency: 143 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: -	Request a Quote	DRAM	SDRAM	256Mbit	LVTTL	143 MHz	-	5.4 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
W25Q16JVSNIM	Winbond Electronics	IC FLASH 16MBIT SPI/QUAD 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고7,650	FLASH	FLASH - NOR	16Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	3ms	6 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CY62147CV18LL-70BAIT	Cypress Semiconductor Corp	IC SRAM 4MBIT PARALLEL 48FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-FBGA (7x8.5)	패키지: -	Request a Quote	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	70ns	70 ns	1.65V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-FBGA (7x8.5)

MT29F256G08AUCABH3-10IT:A TR

Micron Technology Inc.

IC FLASH 256GBIT 100MHZ 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,520

FLASH

FLASH - NAND

256Gb (32G x 8)

Parallel

100MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

CY7C1399BNL-15ZXC

Cypress Semiconductor Corp

IC SRAM 256KBIT 15NS 28TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP I

패키지: 28-TSSOP (0.465", 11.80mm Width)

재고7,680

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

15ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP I

MT48H8M32LFB5-10 IT

Micron Technology Inc.

IC SDRAM 256MBIT 100MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 7ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

패키지: 90-VFBGA

재고4,640

DRAM

SDRAM - Mobile LPSDR

256Mb (8M x 32)

Parallel

100MHz

15ns

7ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

CY7C2565XV18-633BZC

Cypress Semiconductor Corp

IC SRAM 72MBIT 633MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 633MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

패키지: 165-LBGA

재고6,736

SRAM

SRAM - Synchronous, QDR II+

72Mb (2M x 36)

Parallel

633MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

AT28C256-15UM/883

Microchip Technology

IC EEPROM 256KBIT 150NS 28CPGA

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Through Hole
Package / Case: 28-BCPGA
Supplier Device Package: 28-CPGA (13.55x15.06)

패키지: 28-BCPGA

재고6,992

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

150ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TC)

Through Hole

28-BCPGA

28-CPGA (13.55x15.06)

CY7C1061GE30-10ZSXI

Cypress Semiconductor Corp

IC SRAM 16MBIT 10NS 54TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고5,200

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

10ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

7133LA20PFG

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 20NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (2K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고5,472

SRAM

SRAM - Dual Port, Asynchronous

32Kb (2K x 16)

Parallel

-

20ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

71V65803S100BG

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 100MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고3,408

SRAM

SRAM - Synchronous ZBT

9Mb (512K x 18)

Parallel

100MHz

-

5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

71V632S6PFG

IDT, Integrated Device Technology Inc

IC SRAM 2MBIT 6NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 2Mb (64K x 32)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 3.135 V ~ 3.63 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고3,360

SRAM

SRAM - Synchronous

2Mb (64K x 32)

Parallel

83MHz

-

6ns

3.135 V ~ 3.63 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

W29GL256SL9B

Winbond Electronics

IC FLASH 256MBIT 90NS 64LFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-LFBGA (11x13)

패키지: 64-LBGA

재고3,616

FLASH

FLASH - NOR

256Mb (16M x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-LFBGA (11x13)

M95020-RDW6TP

STMicroelectronics

IC EEPROM 2KBIT 5MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고34,200

EEPROM

2Kb (256 x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

S25FL256SAGBHIA10

Cypress Semiconductor Corp

IC FLASH 256MBIT 133MHZ 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

패키지: 24-TBGA

재고11,952

FLASH

FLASH - NOR

256Mb (32M x 8)

SPI - Quad I/O

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

EDB2432B4MA-1DIT-F-D

Micron Technology Inc.

IC DRAM 2G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,704

DRAM

SDRAM - Mobile LPDDR2

2Gb (64M x 32)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

-

NM27LV010T250

ON Semiconductor

IC EPROM 1M PARALLEL 32TSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 250ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

패키지: 32-TFSOP (0.724", 18.40mm Width)

재고2,432

EPROM

EPROM - OTP

1Mb (128K x 8)

Parallel

-

250ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

MT44K32M36RB-083E:A TR

Micron Technology Inc.

IC DRAM 1.125G PARALLEL 1200MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 1.125Gb (32Mb x 36)
Memory Interface: Parallel
Clock Frequency: 1200MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,992

DRAM

1.125Gb (32Mb x 36)

Parallel

1200MHz

-

7.5ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

-

MT29F2G01ABAGDSF-AAT:G TR

Micron Technology Inc.

IC FLASH 2G SPI SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (2G x 1)
Memory Interface: SPI
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,056

FLASH

FLASH - NAND

2Gb (2G x 1)

SPI

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TC)

-

AT28C010-12TU-T

Microchip Technology

IC EEPROM 1M PARALLEL 32TSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-TSOP

패키지: 32-TFSOP (0.465", 11.80mm Width)

재고16,446

EEPROM

1Mb (128K x 8)

Parallel

-

10ms

120ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.465", 11.80mm Width)

32-TSOP

MT58L256L18F1T-10

Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 66 MHz
Write Cycle Time - Word, Page: -
Access Time: 10 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

패키지: -

Request a Quote

SRAM

SRAM - Standard

4Mbit

Parallel

66 MHz

-

10 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

UT61L1024LS-12

Utron

SRAM ASYNC FAST 1M 128X8 5V 32T

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: -
Voltage - Supply: 5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: 32-TSOP

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

1Mbit

Parallel

-

12ns

-

5V

0°C ~ 70°C (TA)

Surface Mount

-

32-TSOP

N25Q064A13ESF40F

Alliance Memory, Inc.

IC FLASH 64MBIT SPI 16SOP2

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: SPI
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 5 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP2

패키지: -

재고2,013

FLASH

FLASH - NOR

64Mbit

SPI

108 MHz

5ms

5 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP2

CY7C1011CV33-10ZXC

Cypress Semiconductor Corp

IC SRAM 2MBIT PARALLEL 32TSOP II

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Supplier Device Package: 32-TSOP II

패키지: -

Request a Quote

SRAM

SRAM - Asynchronous

2Mbit

Parallel

-

10ns

10 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

32-SOIC (0.400", 10.16mm Width)

32-TSOP II

70261S20PFG8

Renesas Electronics Corporation

IC SRAM 256KBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: -

Request a Quote

SRAM

SRAM - Dual Port, Asynchronous

256Kbit

Parallel

-

20ns

20 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MT62F1G64D8CH-036-WT-A-TR

Micron Technology Inc.

IC FLASH 64GBIT 2.75GHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: SDRAM - Mobile LPDDR5
Memory Size: 64Gbit
Memory Interface: -
Clock Frequency: 2.75 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -25°C ~ 85°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

FLASH

SDRAM - Mobile LPDDR5

64Gbit

-

2.75 GHz

-

1.05V

-25°C ~ 85°C

-

MX25U25645GXDI54

Macronix

MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 60µs, 750µs
Access Time: 4 ns
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA, CSPBGA
Supplier Device Package: 24-CSPBGA (6x8)

패키지: -

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FLASH

FLASH - NOR (SLC)

256Mbit

SPI - Quad I/O, QPI, DTR

166 MHz

60µs, 750µs

4 ns

1.65V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA, CSPBGA

24-CSPBGA (6x8)

W959D8NFYA4I-TR

Winbond Electronics

512MB HYPERRAM X8, 250MHZ, IND T

Memory Type: Volatile
Memory Format: DRAM
Technology: HyperRAM
Memory Size: 512Mbit
Memory Interface: HyperBus
Clock Frequency: 250 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 28 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (8x6)

패키지: -

Request a Quote

DRAM

HyperRAM

512Mbit

HyperBus

250 MHz

35ns

28 ns

1.7V ~ 2V

-40°C ~ 85°C (TC)

Surface Mount

24-TBGA

24-TFBGA (8x6)

IS42S83200L-7TL

ISSI, Integrated Silicon Solution Inc

IC DRAM 256MBIT PAR 54TSOP II

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mbit
Memory Interface: LVTTL
Clock Frequency: 143 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: -

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DRAM

SDRAM

256Mbit

LVTTL

143 MHz

-

5.4 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

W25Q16JVSNIM

Winbond Electronics

IC FLASH 16MBIT SPI/QUAD 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고7,650

FLASH

FLASH - NOR

16Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

3ms

6 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CY62147CV18LL-70BAIT

Cypress Semiconductor Corp

IC SRAM 4MBIT PARALLEL 48FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-FBGA (7x8.5)

패키지: -

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SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

70ns

70 ns

1.65V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-FBGA (7x8.5)