페이지 933 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS66WVE1M16BLL-70BLI-TR	ISSI, Integrated Silicon Solution Inc	IC PSRAM 16MBIT 60NS 48BGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA (6x8)	패키지: 48-TFBGA	재고7,200	PSRAM	PSRAM (Pseudo SRAM)	16Mb (1M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA (6x8)
MT47H256M8EB-3:C TR	Micron Technology Inc.	IC SDRAM 2GBIT 333MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (9x11.5)	패키지: 60-TFBGA	재고4,400	DRAM	SDRAM - DDR2	2Gb (256M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	60-TFBGA	60-FBGA (9x11.5)
MT46H64M32LFCX-5 AIT:B TR	Micron Technology Inc.	IC SDRAM 2GBIT 200MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 2Gb (64M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (9x13)	패키지: 90-VFBGA	재고5,328	DRAM	SDRAM - Mobile LPDDR	2Gb (64M x 32)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (9x13)
M25PX16-VZM6TP TR	Micron Technology Inc.	IC FLASH 16MBIT 75MHZ 24TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 5ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	패키지: 24-TBGA	재고3,824	FLASH	FLASH - NOR	16Mb (2M x 8)	SPI	75MHz	15ms, 5ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT48LC8M16A2TG-6A:G TR	Micron Technology Inc.	IC SDRAM 128MBIT 167MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 12ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: 54-TSOP (0.400", 10.16mm Width)	재고3,904	DRAM	SDRAM	128Mb (8M x 16)	Parallel	167MHz	12ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
LH28F320S3HNS-ZM	Sharp Microelectronics	IC FLASH 32MBIT 110NS 56SSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-SOP (0.524", 13.30mm) Supplier Device Package: 56-SSOP	패키지: 56-SOP (0.524", 13.30mm)	재고14,544	FLASH	FLASH	32Mb (4M x 8, 2M x 16)	Parallel	-	110ns	110ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-SOP (0.524", 13.30mm)	56-SSOP
AT25128N-10SI-2.7	Microchip Technology	IC EEPROM 128KBIT 3MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고938,040	EEPROM	EEPROM	128Kb (16K x 8)	SPI	3MHz	5ms	-	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CY7C1370KV33-250AXC	Cypress Semiconductor Corp	IC SRAM 18MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3ns Voltage - Supply: 3.135 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고2,624	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	200MHz	-	3ns	3.135 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
71V65703S80BG8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 8NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고5,824	SRAM	SRAM - Synchronous ZBT	9Mb (256K x 36)	Parallel	-	-	8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
MTFC8GACAANA-4M IT	Micron Technology Inc.	IC FLASH EMMC 64G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,760	-	-	-	-	-	-	-	-	-	-	-	-
IS43TR16256AL-15HBLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 4GBIT 667MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: 96-TFBGA	재고2,560	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	667MHz	15ns	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
S29GL512T12TFN023	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 120ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,664	FLASH	FLASH - NOR	512Mb (64M x 8)	Parallel	-	60ns	120ns	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	-	-	-
71V3577S75BGI8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 7.5NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고7,072	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
SST25VF040B-50-4I-QAE-T	Microchip Technology	IC FLASH 4MBIT 50MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 50MHz Write Cycle Time - Word, Page: 10µs Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (5x6)	패키지: 8-WDFN Exposed Pad	재고2,400	FLASH	FLASH	4Mb (512K x 8)	SPI	50MHz	10µs	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (5x6)
CY7C1353G-100AXC	Cypress Semiconductor Corp	IC SRAM 4.5MBIT 100MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	패키지: 100-LQFP	재고6,504	SRAM	SRAM - Synchronous	4.5Mb (256K x 18)	Parallel	100MHz	-	8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
AT25XE041B-MHNHR-T	Adesto Technologies	IC FLASH 4MBIT 85MHZ 8UDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 8µs, 2.75ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-UDFN (5x6)	패키지: 8-UDFN Exposed Pad	재고5,024	FLASH	FLASH	4Mb (512K x 8)	SPI	85MHz	8µs, 2.75ms	-	1.65 V ~ 3.6 V	-40°C ~ 125°C (TC)	Surface Mount	8-UDFN Exposed Pad	8-UDFN (5x6)
NM24C02LM8	ON Semiconductor	IC EEPROM 2K I2C 100KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I²C Clock Frequency: 100kHz Write Cycle Time - Word, Page: 15ms Access Time: 3.5µs Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고192,312	EEPROM	EEPROM	2Kb (256 x 8)	I²C	100kHz	15ms	3.5µs	2.7 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
S25FL132K0XNFIQ10	Cypress Semiconductor Corp	IC FLASH 32MBIT 108MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.209", 5.30mm Width)	재고5,104	FLASH	FLASH - NOR	32Mb (4M x 8)	SPI - Quad I/O	108MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
GS4576C36GL-18I	GSI Technology Inc.	IC DRAM 576MBIT PARALLEL 144UBGA Memory Type: Volatile Memory Format: DRAM Technology: LLDRAM2 Memory Size: 576Mbit Memory Interface: Parallel Clock Frequency: 533 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-uBGA (18.5x11)	패키지: -	Request a Quote	DRAM	LLDRAM2	576Mbit	Parallel	533 MHz	-	-	1.7V ~ 1.9V	-40°C ~ 95°C (TC)	Surface Mount	144-TFBGA	144-uBGA (18.5x11)
CY62148G30-45ZAXIT	Infineon Technologies	ASYNC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Single Port, Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.465", 11.80mm Width) Supplier Device Package: 32-TSOP I	패키지: -	Request a Quote	SRAM	SRAM - Single Port, Asynchronous	4Mbit	Parallel	-	45ns	45 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	32-TFSOP (0.465", 11.80mm Width)	32-TSOP I
CAT25256VI-GT3C	onsemi	IC EEPROM 256KBIT SPI 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kbit Memory Interface: SPI Clock Frequency: 10 MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	Request a Quote	EEPROM	EEPROM	256Kbit	SPI	10 MHz	5ms	-	1.8V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CY27C010-70ZC	Cypress Semiconductor Corp	IC EPROM 1MBIT PARALLEL 32TSOP I Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 70 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP I	패키지: -	Request a Quote	EPROM	EPROM - OTP	1Mbit	Parallel	-	-	70 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP I
MT53E768M32D4DT-046-AUT-E	Micron Technology Inc.	IC DRAM 24GBIT 2.133GHZ FBGA QDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gbit Memory Interface: - Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	24Gbit	-	2.133 GHz	-	-	1.1V	-40°C ~ 125°C (TC)	-	-	-
W638GU6QB12I	Winbond Electronics	8GB DDR3L 1.35V SDRAM, X16, 800M Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-VFBGA Supplier Device Package: 96-VFBGA (7.5x13)	패키지: -	Request a Quote	DRAM	SDRAM - DDR3L	8Gbit	Parallel	800 MHz	15ns	20 ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-VFBGA	96-VFBGA (7.5x13)
MT53E768M64D4SP-046-WT-B-TR	Micron Technology Inc.	IC MEM LPDDR4 48G FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
70V24S12PFG8	Renesas Electronics Corporation	70V24S12PFG8 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CY27C512-45ZC	Cypress Semiconductor Corp	IC EPROM 512KBIT PAR 32TSOP I Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 512Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 45 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP I	패키지: -	Request a Quote	EPROM	EPROM - OTP	512Kbit	Parallel	-	-	45 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP I
ASFC8G31M-51BIN	Alliance Memory, Inc.	IC FLASH 64GBIT MMC 153FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gbit Memory Interface: MMC Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-FBGA (11.5x13)	패키지: -	재고300	FLASH	FLASH - NAND	64Gbit	MMC	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-FBGA (11.5x13)

IS66WVE1M16BLL-70BLI-TR

ISSI, Integrated Silicon Solution Inc

IC PSRAM 16MBIT 60NS 48BGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (6x8)

패키지: 48-TFBGA

재고7,200

PSRAM

PSRAM (Pseudo SRAM)

16Mb (1M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-TFBGA (6x8)

MT47H256M8EB-3:C TR

Micron Technology Inc.

IC SDRAM 2GBIT 333MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (9x11.5)

패키지: 60-TFBGA

재고4,400

DRAM

SDRAM - DDR2

2Gb (256M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

60-TFBGA

60-FBGA (9x11.5)

MT46H64M32LFCX-5 AIT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 200MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 2Gb (64M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (9x13)

패키지: 90-VFBGA

재고5,328

DRAM

SDRAM - Mobile LPDDR

2Gb (64M x 32)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (9x13)

M25PX16-VZM6TP TR

Micron Technology Inc.

IC FLASH 16MBIT 75MHZ 24TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

패키지: 24-TBGA

재고3,824

FLASH

FLASH - NOR

16Mb (2M x 8)

SPI

75MHz

15ms, 5ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MT48LC8M16A2TG-6A:G TR

Micron Technology Inc.

IC SDRAM 128MBIT 167MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: 54-TSOP (0.400", 10.16mm Width)

재고3,904

DRAM

SDRAM

128Mb (8M x 16)

Parallel

167MHz

12ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

LH28F320S3HNS-ZM

Sharp Microelectronics

IC FLASH 32MBIT 110NS 56SSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-SOP (0.524", 13.30mm)
Supplier Device Package: 56-SSOP

패키지: 56-SOP (0.524", 13.30mm)

재고14,544

FLASH

32Mb (4M x 8, 2M x 16)

Parallel

-

110ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-SOP (0.524", 13.30mm)

56-SSOP

AT25128N-10SI-2.7

Microchip Technology

IC EEPROM 128KBIT 3MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고938,040

EEPROM

128Kb (16K x 8)

SPI

3MHz

5ms

-

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CY7C1370KV33-250AXC

Cypress Semiconductor Corp

IC SRAM 18MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3ns
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고2,624

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

200MHz

-

3ns

3.135 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

71V65703S80BG8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 8NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고5,824

SRAM

SRAM - Synchronous ZBT

9Mb (256K x 36)

Parallel

-

8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

MTFC8GACAANA-4M IT

Micron Technology Inc.

IC FLASH EMMC 64G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,760

-

IS43TR16256AL-15HBLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 4GBIT 667MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: 96-TFBGA

재고2,560

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

667MHz

15ns

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

S29GL512T12TFN023

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 120ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,664

FLASH

FLASH - NOR

512Mb (64M x 8)

Parallel

-

60ns

120ns

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

-

71V3577S75BGI8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 7.5NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고7,072

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

SST25VF040B-50-4I-QAE-T

Microchip Technology

IC FLASH 4MBIT 50MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: 10µs
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (5x6)

패키지: 8-WDFN Exposed Pad

재고2,400

FLASH

4Mb (512K x 8)

SPI

50MHz

10µs

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (5x6)

CY7C1353G-100AXC

Cypress Semiconductor Corp

IC SRAM 4.5MBIT 100MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

패키지: 100-LQFP

재고6,504

SRAM

SRAM - Synchronous

4.5Mb (256K x 18)

Parallel

100MHz

-

8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

AT25XE041B-MHNHR-T

Adesto Technologies

IC FLASH 4MBIT 85MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 8µs, 2.75ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-UDFN (5x6)

패키지: 8-UDFN Exposed Pad

재고5,024

FLASH

4Mb (512K x 8)

SPI

85MHz

8µs, 2.75ms

-

1.65 V ~ 3.6 V

-40°C ~ 125°C (TC)

Surface Mount

8-UDFN Exposed Pad

8-UDFN (5x6)

NM24C02LM8

ON Semiconductor

IC EEPROM 2K I2C 100KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I²C
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 15ms
Access Time: 3.5µs
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고192,312

EEPROM

2Kb (256 x 8)

I²C

100kHz

15ms

3.5µs

2.7 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

S25FL132K0XNFIQ10

Cypress Semiconductor Corp

IC FLASH 32MBIT 108MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.209", 5.30mm Width)

재고5,104

FLASH

FLASH - NOR

32Mb (4M x 8)

SPI - Quad I/O

108MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

GS4576C36GL-18I

GSI Technology Inc.

IC DRAM 576MBIT PARALLEL 144UBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: LLDRAM2
Memory Size: 576Mbit
Memory Interface: Parallel
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-uBGA (18.5x11)

패키지: -

Request a Quote

DRAM

LLDRAM2

576Mbit

Parallel

533 MHz

-

1.7V ~ 1.9V

-40°C ~ 95°C (TC)

Surface Mount

144-TFBGA

144-uBGA (18.5x11)

CY62148G30-45ZAXIT

Infineon Technologies

ASYNC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Single Port, Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-TSOP I

패키지: -

Request a Quote

SRAM

SRAM - Single Port, Asynchronous

4Mbit

Parallel

-

45ns

45 ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

32-TFSOP (0.465", 11.80mm Width)

32-TSOP I

CAT25256VI-GT3C

onsemi

IC EEPROM 256KBIT SPI 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kbit
Memory Interface: SPI
Clock Frequency: 10 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

Request a Quote

EEPROM

256Kbit

SPI

10 MHz

5ms

-

1.8V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CY27C010-70ZC

Cypress Semiconductor Corp

IC EPROM 1MBIT PARALLEL 32TSOP I

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 70 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I

패키지: -

Request a Quote

EPROM

EPROM - OTP

1Mbit

Parallel

-

70 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP I

MT53E768M32D4DT-046-AUT-E

Micron Technology Inc.

IC DRAM 24GBIT 2.133GHZ FBGA QDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gbit
Memory Interface: -
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

24Gbit

-

2.133 GHz

-

1.1V

-40°C ~ 125°C (TC)

-

W638GU6QB12I

Winbond Electronics

8GB DDR3L 1.35V SDRAM, X16, 800M

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-VFBGA
Supplier Device Package: 96-VFBGA (7.5x13)

패키지: -

Request a Quote

DRAM

SDRAM - DDR3L

8Gbit

Parallel

800 MHz

15ns

20 ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-VFBGA

96-VFBGA (7.5x13)

MT53E768M64D4SP-046-WT-B-TR

Micron Technology Inc.

IC MEM LPDDR4 48G FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

70V24S12PFG8

Renesas Electronics Corporation

70V24S12PFG8

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

CY27C512-45ZC

Cypress Semiconductor Corp

IC EPROM 512KBIT PAR 32TSOP I

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 512Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 45 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I

패키지: -

Request a Quote

EPROM

EPROM - OTP

512Kbit

Parallel

-

45 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP I

ASFC8G31M-51BIN

Alliance Memory, Inc.

IC FLASH 64GBIT MMC 153FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gbit
Memory Interface: MMC
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-FBGA (11.5x13)

패키지: -

재고300

FLASH

FLASH - NAND

64Gbit

MMC

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-FBGA (11.5x13)