페이지 950 - 메모리 | 집적 회로(IC) | Heisener Electronics
고객 문의
SalesDept@heisener.com +86-755-83210559 ext. 816
로그인/등록
Language Translation

* Please refer to the English Version as our Official Version.

BOM
카트 0

메모리

기록 62,144
페이지  950/2,220
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CM753-80031
Cypress Semiconductor Corp

IC FLASH NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,288
-
-
-
-
-
-
-
-
-
-
-
-
IS42SM32800E-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
패키지: 90-TFBGA
재고3,392
DRAM
SDRAM - Mobile
256Mb (8M x 32)
Parallel
133MHz
-
6ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
R1LV0808ASB-5SI#S0
Renesas Electronics America

IC SRAM 8MBIT 55NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM
  • Memory Size: 8Mb (1M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: 44-TSOP (0.400", 10.16mm Width)
재고5,504
SRAM
SRAM
8Mb (1M x 8)
Parallel
-
55ns
55ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
IDT71V2558S166PF8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (256K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고2,592
SRAM
SRAM - Synchronous ZBT
4.5Mb (256K x 18)
Parallel
166MHz
-
3.5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
hot CY14B256L-SP35XI
Cypress Semiconductor Corp

IC NVSRAM 256KBIT 35NS 48SSOP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-BSSOP (0.295", 7.50mm Width)
  • Supplier Device Package: 48-SSOP
패키지: 48-BSSOP (0.295", 7.50mm Width)
재고7,136
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
35ns
35ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-BSSOP (0.295", 7.50mm Width)
48-SSOP
MT46V128M8TG-75:A TR
Micron Technology Inc.

IC SDRAM 1GBIT 133MHZ 66TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 750ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP
패키지: 66-TSSOP (0.400", 10.16mm Width)
재고4,000
DRAM
SDRAM - DDR
1Gb (128M x 8)
Parallel
133MHz
15ns
750ps
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP
AT27C512R-45TC
Microchip Technology

IC OTP 512KBIT 45NS 28TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP
패키지: 28-TSSOP (0.465", 11.80mm Width)
재고3,936
EPROM
EPROM - OTP
512Kb (64K x 8)
Parallel
-
-
45ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP
AT28HC256F-90PI
Microchip Technology

IC EEPROM 256KBIT 90NS 28DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 90ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.600", 15.24mm)
  • Supplier Device Package: 28-PDIP
패키지: 28-DIP (0.600", 15.24mm)
재고2,256
EEPROM
EEPROM
256Kb (32K x 8)
Parallel
-
3ms
90ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TC)
Through Hole
28-DIP (0.600", 15.24mm)
28-PDIP
CY7C2565XV18-600BZC
Cypress Semiconductor Corp

IC SRAM 72MBIT 600MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II+
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: 165-LBGA
재고2,112
SRAM
SRAM - Synchronous, QDR II+
72Mb (2M x 36)
Parallel
600MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
70T3519S133BF
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 208CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4.2ns
  • Voltage - Supply: 2.4 V ~ 2.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-LFBGA
  • Supplier Device Package: 208-CABGA (15x15)
패키지: 208-LFBGA
재고7,808
SRAM
SRAM - Dual Port, Synchronous
9Mb (256K x 36)
Parallel
133MHz
-
4.2ns
2.4 V ~ 2.6 V
0°C ~ 70°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
71V65803S100BGGI
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 100MHZ 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 9Mb (512K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
패키지: 119-BGA
재고7,856
SRAM
SRAM - Synchronous ZBT
9Mb (512K x 18)
Parallel
100MHz
-
5ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
IS64WV3216BLL-15CTLA3-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 512KBIT 15NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 512Kb (32K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
패키지: 44-TSOP (0.400", 10.16mm Width)
재고3,120
SRAM
SRAM - Asynchronous
512Kb (32K x 16)
Parallel
-
15ns
15ns
2.5 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
AT88SC0808CA-MJTG
Microchip Technology

IC EEPROM 8KBIT 4MHZ M2J

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 4MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 250ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: M2 J, Smart Card Module (TWI)
  • Supplier Device Package: M2 - J Module (TWI)
패키지: M2 J, Smart Card Module (TWI)
재고3,456
EEPROM
EEPROM
8Kb (1K x 8)
I2C
4MHz
5ms
250ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
M2 J, Smart Card Module (TWI)
M2 - J Module (TWI)
AS4C64M16D3A-12BIN
Alliance Memory, Inc.

IC SDRAM 1GBIT 800MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 1Gb (64M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-VFBGA
  • Supplier Device Package: 96-FBGA (13x8)
패키지: 96-VFBGA
재고6,084
DRAM
SDRAM - DDR3
1Gb (64M x 16)
Parallel
800MHz
15ns
20ns
1.425 V ~ 1.575 V
-40°C ~ 95°C (TC)
Surface Mount
96-VFBGA
96-FBGA (13x8)
71V424S10YG8
IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 10NS 36SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-BSOJ (0.400", 10.16mm Width)
  • Supplier Device Package: 36-SOJ
패키지: 36-BSOJ (0.400", 10.16mm Width)
재고13,764
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
10ns
10ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
36-BSOJ (0.400", 10.16mm Width)
36-SOJ
hot MX30LF4G18AC-TI
Macronix

IC FLASH 4GBIT 20NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고15,384
FLASH
FLASH - NAND (SLC)
4Gb (512M x 8)
Parallel
-
20ns
20ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
SST26VF016B-104I/WF70S
Microchip Technology

IC FLASH 16M SPI 104MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 1.5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,752
FLASH
FLASH
16Mb (2M x 8)
SPI - Quad I/O
104MHz
1.5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
S99GL064AB
Cypress Semiconductor Corp

IC MEMORY NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,944
-
-
-
-
-
-
-
-
-
-
-
-
70V9279S15PRF8
IDT, Integrated Device Technology Inc

IC SRAM 512K PARALLEL 128TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 512Kb (32K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 15ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 128-LQFP
  • Supplier Device Package: 128-TQFP (14x20)
패키지: 128-LQFP
재고5,456
SRAM
SRAM - Dual Port, Synchronous
512Kb (32K x 16)
Parallel
-
-
15ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
128-LQFP
128-TQFP (14x20)
S25FL129P0XMFV000M
Cypress Semiconductor Corp

IC MEMORY FLASH NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 5µs, 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.295", 7.50mm Width)
재고4,016
FLASH
FLASH - NOR
128Mb (16M x 8)
SPI - Quad I/O
104MHz
5µs, 3ms
-
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
MT29F1HT08EMHBBJ4-3R:B
Micron Technology Inc.

IC FLASH 1.5T PARALLEL 333MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 1.5Tb (192G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,960
FLASH
FLASH - NAND
1.5Tb (192G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
CY15V116QI-20BKXC
Infineon Technologies

IC FRAM 16MBIT SPI 20MHZ 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 16Mbit
  • Memory Interface: SPI
  • Clock Frequency: 20 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20 ns
  • Voltage - Supply: 1.71V ~ 1.89V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-FBGA (6x8)
패키지: -
재고75
FRAM
FRAM (Ferroelectric RAM)
16Mbit
SPI
20 MHz
-
20 ns
1.71V ~ 1.89V
0°C ~ 70°C (TA)
Surface Mount
24-TBGA
24-FBGA (6x8)
W66CL2NQUAFJ
Winbond Electronics

IC DRAM 4GBIT LVSTL 11 200WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 4Gbit
  • Memory Interface: LVSTL_11
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4
4Gbit
LVSTL_11
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
W25Q16JVUUIM-TR
Winbond Electronics

IC FLASH 16MBIT SPI/QUAD 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mbit
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 6 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-USON (4x3)
패키지: -
Request a Quote
FLASH
FLASH - NOR
16Mbit
SPI - Quad I/O, QPI, DTR
133 MHz
3ms
6 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-USON (4x3)
CG8229AA
Infineon Technologies

IC SRAM MICROPOWER

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
AS4C128M16D2A-25BANTR
Alliance Memory, Inc.

MEMORY

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 2Gbit
  • Memory Interface: SSTL_18
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 400 ps
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 84-TFBGA
  • Supplier Device Package: 84-TFBGA (8x12.5)
패키지: -
Request a Quote
DRAM
SDRAM - DDR2
2Gbit
SSTL_18
400 MHz
15ns
400 ps
1.7V ~ 1.9V
-40°C ~ 105°C (TC)
Surface Mount
84-TFBGA
84-TFBGA (8x12.5)
MT62F1G128D8AK-031-XT-B-TR
Micron Technology Inc.

LPDDR5 128G 1GX128 FBGA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
GD25B32EWIGR
GigaDevice Semiconductor (HK) Limited

IC FLASH 32MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 70µs, 2.4ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (5x6)
패키지: -
Request a Quote
FLASH
FLASH - NOR (SLC)
32Mbit
SPI - Quad I/O
133 MHz
70µs, 2.4ms
7 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (5x6)