페이지 97 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT41J256M16HA-093G:E TR	Micron Technology Inc.	IC SDRAM 4GBIT 1067MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1066MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (9x14)	패키지: 96-TFBGA	재고7,056	DRAM	SDRAM - DDR3	4Gb (256M x 16)	Parallel	1066MHz	-	20ns	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (9x14)
SST26VF016-80-5C-S2AE	Microchip Technology	IC FLASH 16MBIT 80MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 80MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.209", 5.30mm Width)	재고7,088	FLASH	FLASH	16Mb (2M x 8)	SPI - Quad I/O	80MHz	1.5ms	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
IDT71V424YS10PHI8	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고5,280	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
CY7C1021CV33-12VXIT	Cypress Semiconductor Corp	IC SRAM 1MBIT 12NS 44SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 44-SOJ	패키지: 44-BSOJ (0.400", 10.16mm Width)	재고5,328	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-BSOJ (0.400", 10.16mm Width)	44-SOJ
F640BFHEPBTLHGA	Sharp Microelectronics	IC FLASH 64MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - Boot Block Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 48-TSOP	패키지: 48-TFSOP (0.488", 12.40mm Width)	재고4,128	FLASH	FLASH - Boot Block	64Mb (4M x 16)	Parallel	-	70ns	70ns	-	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.488", 12.40mm Width)	48-TSOP
AT28C256-90JI	Microchip Technology	IC EEPROM 256KBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	패키지: 32-LCC (J-Lead)	재고6,576	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	90ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT49LV002-12PC	Microchip Technology	IC FLASH 2MBIT 120NS 32DIP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 120ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-DIP	패키지: 32-DIP (0.600", 15.24mm)	재고6,640	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	120ns	3 V ~ 3.6 V	0°C ~ 70°C (TC)	Through Hole	32-DIP (0.600", 15.24mm)	32-DIP
AT27C010-55PC	Microchip Technology	IC OTP 1MBIT 55NS 32DIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-DIP	패키지: 32-DIP (0.600", 15.24mm)	재고5,456	EPROM	EPROM - OTP	1Mb (128K x 8)	Parallel	-	-	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Through Hole	32-DIP (0.600", 15.24mm)	32-DIP
70V659S12BCGI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 12NS 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고3,552	SRAM	SRAM - Dual Port, Asynchronous	4.5Mb (128K x 36)	Parallel	-	12ns	12ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
70V7519S133BF8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 208CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: 208-CABGA (15x15)	패키지: 208-LFBGA	재고7,376	SRAM	SRAM - Dual Port, Synchronous	9Mb (256K x 36)	Parallel	133MHz	-	4.2ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	208-LFBGA	208-CABGA (15x15)
MT52L512M64D4GN-107 WT:B TR	Micron Technology Inc.	IC SDRAM 32GBIT 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,368	DRAM	SDRAM - Mobile LPDDR3	32Gb (512M x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
S29GL01GT13TFNV20	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 130ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,696	FLASH	FLASH - NOR	1Gb (128M x 8)	Parallel	-	60ns	130ns	1.65 V ~ 3.6 V	-40°C ~ 125°C (TA)	-	-	-
IS61WV12816DBLL-10TLI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 2MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	패키지: 44-TSOP (0.400", 10.16mm Width)	재고4,400	SRAM	SRAM - Asynchronous	2Mb (128K x 16)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
25AA02E64-I/SN	Microchip Technology	IC EEPROM 2KBIT 10MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고13,044	EEPROM	EEPROM	2Kb (256 x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
24AA512SC-I/S17K	Microchip Technology	IC EEPROM 512K I2C 400KHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I²C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	패키지: Die	재고7,088	EEPROM	EEPROM	512Kb (64K x 8)	I²C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
AS4C64M16D3LB-12BCNTR	Alliance Memory, Inc.	IC DRAM 1G PARALLEL 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (13x9)	패키지: 96-TFBGA	재고3,008	DRAM	SDRAM - DDR3L	1Gb (64M x 16)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (13x9)
MT53D256M64D4NY-046 XT ES:B	Micron Technology Inc.	IC DRAM 16G 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,288	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
W631GU8KB11I	Winbond Electronics	IC SDRAM 1GBIT 78BGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,984	-	-	-	-	-	-	-	-	-	-	-	-
MT35XL256ABA1G12-0AAT TR	Micron Technology Inc.	SPI FLASH NOR SLC 32MX8 TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 256Mb (32M x 8) Memory Interface: Xccela Bus Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TPBGA	패키지: 24-TBGA	재고3,872	FLASH	FLASH	256Mb (32M x 8)	Xccela Bus	133MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C	Surface Mount	24-TBGA	24-TPBGA
CG8606AA	Cypress Semiconductor Corp	IC SRAM SYNC 100TQFP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,744	-	-	-	-	-	-	-	-	-	-	-	-
MT53D512M64D4NZ-046 WT:E TR	Micron Technology Inc.	IC DRAM 32G 2133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (512M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,616	DRAM	SDRAM - Mobile LPDDR4	32Gb (512M x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
SST26VF016BT-104V/MF70SVAO	Microchip Technology	16MB SQI FLASH MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WDFN (5x6)	패키지: 8-WDFN Exposed Pad	재고2,544	FLASH	FLASH	16Mb (2M x 8)	SPI - Quad I/O	104MHz	1.5ms	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WDFN (5x6)
25LC256T-E/SN16KVAO	Microchip Technology	APG STANDARD Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 5MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,504	EEPROM	EEPROM	256Kb (32K x 8)	SPI	5MHz	5ms	-	2.5V ~ 5.5V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
40060542	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IS45S16800J-6TLA1	ISSI, Integrated Silicon Solution Inc	IC DRAM 128MBIT PAR 54TSOP II Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: -	Request a Quote	DRAM	SDRAM	128Mbit	LVTTL	166 MHz	-	5.4 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
CY62138FV30LL-45AXI	Cypress Semiconductor Corp	SRAM - ASYNCHRONOUS MEMORY IC 2M Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.2V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	SRAM	SRAM - Synchronous	2Mbit	Parallel	-	45ns	45 ns	2.2V ~ 3.6V	-40°C ~ 85°C (TA)	-	-	-
W25N01GVZEIG	Winbond Electronics	IC FLASH 1GBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 700µs Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (8x6)	패키지: -	재고4,602	FLASH	FLASH - NAND (SLC)	1Gbit	SPI - Quad I/O	104 MHz	700µs	7 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (8x6)
IS46TR16640ED-125KBLA1-TR	ISSI, Integrated Silicon Solution Inc	Automotive (Tc: -40 to +95C), 1G Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gbit Memory Interface: SSTL_15 Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	패키지: -	Request a Quote	DRAM	SDRAM - DDR3	1Gbit	SSTL_15	800 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)

MT41J256M16HA-093G:E TR

Micron Technology Inc.

IC SDRAM 4GBIT 1067MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1066MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (9x14)

패키지: 96-TFBGA

재고7,056

DRAM

SDRAM - DDR3

4Gb (256M x 16)

Parallel

1066MHz

-

20ns

1.425 V ~ 1.575 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (9x14)

SST26VF016-80-5C-S2AE

Microchip Technology

IC FLASH 16MBIT 80MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 80MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.209", 5.30mm Width)

재고7,088

FLASH

16Mb (2M x 8)

SPI - Quad I/O

80MHz

1.5ms

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

IDT71V424YS10PHI8

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고5,280

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

CY7C1021CV33-12VXIT

Cypress Semiconductor Corp

IC SRAM 1MBIT 12NS 44SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 44-SOJ

패키지: 44-BSOJ (0.400", 10.16mm Width)

재고5,328

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-BSOJ (0.400", 10.16mm Width)

44-SOJ

F640BFHEPBTLHGA

Sharp Microelectronics

IC FLASH 64MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - Boot Block
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 48-TSOP

패키지: 48-TFSOP (0.488", 12.40mm Width)

재고4,128

FLASH

FLASH - Boot Block

64Mb (4M x 16)

Parallel

-

70ns

-

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.488", 12.40mm Width)

48-TSOP

AT28C256-90JI

Microchip Technology

IC EEPROM 256KBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

패키지: 32-LCC (J-Lead)

재고6,576

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

90ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT49LV002-12PC

Microchip Technology

IC FLASH 2MBIT 120NS 32DIP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 120ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP

패키지: 32-DIP (0.600", 15.24mm)

재고6,640

FLASH

2Mb (256K x 8)

Parallel

-

50µs

120ns

3 V ~ 3.6 V

0°C ~ 70°C (TC)

Through Hole

32-DIP (0.600", 15.24mm)

32-DIP

AT27C010-55PC

Microchip Technology

IC OTP 1MBIT 55NS 32DIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP

패키지: 32-DIP (0.600", 15.24mm)

재고5,456

EPROM

EPROM - OTP

1Mb (128K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Through Hole

32-DIP (0.600", 15.24mm)

32-DIP

70V659S12BCGI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 12NS 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고3,552

SRAM

SRAM - Dual Port, Asynchronous

4.5Mb (128K x 36)

Parallel

-

12ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

70V7519S133BF8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 208CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)

패키지: 208-LFBGA

재고7,376

SRAM

SRAM - Dual Port, Synchronous

9Mb (256K x 36)

Parallel

133MHz

-

4.2ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

208-LFBGA

208-CABGA (15x15)

MT52L512M64D4GN-107 WT:B TR

Micron Technology Inc.

IC SDRAM 32GBIT 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,368

DRAM

SDRAM - Mobile LPDDR3

32Gb (512M x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

S29GL01GT13TFNV20

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 130ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,696

FLASH

FLASH - NOR

1Gb (128M x 8)

Parallel

-

60ns

130ns

1.65 V ~ 3.6 V

-40°C ~ 125°C (TA)

-

IS61WV12816DBLL-10TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 2MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

패키지: 44-TSOP (0.400", 10.16mm Width)

재고4,400

SRAM

SRAM - Asynchronous

2Mb (128K x 16)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

25AA02E64-I/SN

Microchip Technology

IC EEPROM 2KBIT 10MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고13,044

EEPROM

2Kb (256 x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

24AA512SC-I/S17K

Microchip Technology

IC EEPROM 512K I2C 400KHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I²C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

패키지: Die

재고7,088

EEPROM

512Kb (64K x 8)

I²C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

AS4C64M16D3LB-12BCNTR

Alliance Memory, Inc.

IC DRAM 1G PARALLEL 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (13x9)

패키지: 96-TFBGA

재고3,008

DRAM

SDRAM - DDR3L

1Gb (64M x 16)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (13x9)

MT53D256M64D4NY-046 XT ES:B

Micron Technology Inc.

IC DRAM 16G 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,288

DRAM

SDRAM - Mobile LPDDR4

16Gb (256M x 64)

-

2133MHz

-

1.1V

-30°C ~ 105°C (TC)

-

W631GU8KB11I

Winbond Electronics

IC SDRAM 1GBIT 78BGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,984

-

MT35XL256ABA1G12-0AAT TR

Micron Technology Inc.

SPI FLASH NOR SLC 32MX8 TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 256Mb (32M x 8)
Memory Interface: Xccela Bus
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TPBGA

패키지: 24-TBGA

재고3,872

FLASH

256Mb (32M x 8)

Xccela Bus

133MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C

Surface Mount

24-TBGA

24-TPBGA

CG8606AA

Cypress Semiconductor Corp

IC SRAM SYNC 100TQFP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,744

-

MT53D512M64D4NZ-046 WT:E TR

Micron Technology Inc.

IC DRAM 32G 2133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,616

DRAM

SDRAM - Mobile LPDDR4

32Gb (512M x 64)

-

2133MHz

-

1.1V

-30°C ~ 85°C (TC)

-

SST26VF016BT-104V/MF70SVAO

Microchip Technology

16MB SQI FLASH MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WDFN (5x6)

패키지: 8-WDFN Exposed Pad

재고2,544

FLASH

16Mb (2M x 8)

SPI - Quad I/O

104MHz

1.5ms

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WDFN (5x6)

25LC256T-E/SN16KVAO

Microchip Technology

APG STANDARD

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,504

EEPROM

256Kb (32K x 8)

SPI

5MHz

5ms

-

2.5V ~ 5.5V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

40060542

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

IS45S16800J-6TLA1

ISSI, Integrated Silicon Solution Inc

IC DRAM 128MBIT PAR 54TSOP II

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: -

Request a Quote

DRAM

SDRAM

128Mbit

LVTTL

166 MHz

-

5.4 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

CY62138FV30LL-45AXI

Cypress Semiconductor Corp

SRAM - ASYNCHRONOUS MEMORY IC 2M

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

SRAM

SRAM - Synchronous

2Mbit

Parallel

-

45ns

45 ns

2.2V ~ 3.6V

-40°C ~ 85°C (TA)

-

W25N01GVZEIG

Winbond Electronics

IC FLASH 1GBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 700µs
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)

패키지: -

재고4,602

FLASH

FLASH - NAND (SLC)

1Gbit

SPI - Quad I/O

104 MHz

700µs

7 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (8x6)

IS46TR16640ED-125KBLA1-TR

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 1G

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gbit
Memory Interface: SSTL_15
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

패키지: -

Request a Quote

DRAM

SDRAM - DDR3

1Gbit

SSTL_15

800 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)