페이지 980 - 메모리 | 집적 회로(IC) | Heisener Electronics
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메모리

기록 62,144
페이지  980/2,220
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT29F256G08AUCABK4-10:A TR
Micron Technology Inc.

IC FLASH 256GBIT 100MHZ

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,856
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
AS4C16M16S-6TAN
Alliance Memory, Inc.

IC SDRAM 256MBIT 166MHZ 54TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mb (16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고4,432
DRAM
SDRAM
256Mb (16M x 16)
Parallel
166MHz
12ns
5.4ns
3 V ~ 3.6 V
-40°C ~ 105°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MT29F256G08CECABH6-6R:A
Micron Technology Inc.

IC FLASH 256GBIT 167MHZ 152VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 152-VBGA
  • Supplier Device Package: 152-VBGA
패키지: 152-VBGA
재고2,032
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
166MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
152-VBGA
152-VBGA
hot MT41J128M16HA-125:D
Micron Technology Inc.

IC SDRAM 2GBIT 800MHZ 96FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 13.75ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-FBGA (9x14)
패키지: 96-TFBGA
재고17,004
DRAM
SDRAM - DDR3
2Gb (128M x 16)
Parallel
800MHz
-
13.75ns
1.425 V ~ 1.575 V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x14)
M29W256GH70ZS6F TR
Micron Technology Inc.

IC FLASH 256MBIT 70NS 64FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 256Mb (32M x 8, 16M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (11x13)
패키지: 64-LBGA
재고5,888
FLASH
FLASH - NOR
256Mb (32M x 8, 16M x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (11x13)
IDT71T75802S166PFI8
IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 166MHZ 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.5ns
  • Voltage - Supply: 2.375 V ~ 2.625 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
패키지: 100-LQFP
재고2,528
SRAM
SRAM - Synchronous ZBT
18Mb (1M x 18)
Parallel
166MHz
-
3.5ns
2.375 V ~ 2.625 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
CY7C1168V18-375BZXC
Cypress Semiconductor Corp

IC SRAM 18MBIT 375MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II
  • Memory Size: 18Mb (1M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 375MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
패키지: 165-LBGA
재고2,896
SRAM
SRAM - Synchronous, DDR II
18Mb (1M x 18)
Parallel
375MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
MT46V32M16BN-5B:F TR
Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 60FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 700ps
  • Voltage - Supply: 2.5 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-TFBGA
  • Supplier Device Package: 60-FBGA (10x12.5)
패키지: 60-TFBGA
재고6,464
DRAM
SDRAM - DDR
512Mb (32M x 16)
Parallel
200MHz
15ns
700ps
2.5 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
60-TFBGA
60-FBGA (10x12.5)
M29W400DT55N6F TR
Micron Technology Inc.

IC FLASH 4MBIT 55NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8, 256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
패키지: 48-TFSOP (0.724", 18.40mm Width)
재고6,864
FLASH
FLASH - NOR
4Mb (512K x 8, 256K x 16)
Parallel
-
55ns
55ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
CY7C0832V-133AXC
Cypress Semiconductor Corp

IC SRAM 4.5MBIT 133MHZ 120TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 4.5Mb (256K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 120-LQFP
  • Supplier Device Package: 120-TQFP (14x14)
패키지: 120-LQFP
재고4,688
SRAM
SRAM - Dual Port, Synchronous
4.5Mb (256K x 18)
Parallel
133MHz
-
-
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
120-LQFP
120-TQFP (14x14)
hot M25P32-VMF6G
Micron Technology Inc.

IC FLASH 32MBIT 75MHZ 16SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 75MHz
  • Write Cycle Time - Word, Page: 15ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SO W
패키지: 16-SOIC (0.295", 7.50mm Width)
재고41,568
FLASH
FLASH - NOR
32Mb (4M x 8)
SPI
75MHz
15ms, 5ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SO W
CY14B108N-ZSP45XIT
Cypress Semiconductor Corp

IC NVSRAM 8MBIT 45NS 54TSOP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 8Mb (512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
패키지: 54-TSOP (0.400", 10.16mm Width)
재고3,824
NVSRAM
NVSRAM (Non-Volatile SRAM)
8Mb (512K x 16)
Parallel
-
45ns
45ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
MT41K256M16V00HWC1
Micron Technology Inc.

IC FLASH NAND 32GX8 TSOP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,168
-
-
-
-
-
-
-
-
-
-
-
-
hot MX29LV160DBXBI-70G
Macronix

IC FLASH 16MBIT 70NS 48TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFBGA, CSPBGA
  • Supplier Device Package: 48-TFBGA, CSP (6x8)
패키지: 48-TFBGA, CSPBGA
재고16,704
FLASH
FLASH - NOR
16Mb (2M x 8)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA, CSPBGA
48-TFBGA, CSP (6x8)
25LC320A-E/ST
Microchip Technology

IC EEPROM 32KBIT 10MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고3,824
EEPROM
EEPROM
32Kb (4K x 8)
SPI
10MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
S29GL064S80TFIV10
Cypress Semiconductor Corp

IC FLASH 64MBIT 80NS 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8, 4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 80ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
패키지: 56-TFSOP (0.724", 18.40mm Width)
재고6,480
FLASH
FLASH - NOR
64Mb (8M x 8, 4M x 16)
Parallel
-
60ns
80ns
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
S29GL128P90FFSS93
Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 128Mb (16M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-FBGA (13x11)
패키지: 64-LBGA
재고5,760
FLASH
FLASH - NOR
128Mb (16M x 8)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
0°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-FBGA (13x11)
S71PL032J04BFW0K0B
Cypress Semiconductor Corp

IC FLASH MEMORY SMD

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,952
-
-
-
-
-
-
-
-
-
-
-
-
MTFC32GAPALBH-AIT ES
Micron Technology Inc.

IC FLASH 256G MMC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,112
FLASH
FLASH - NAND
256Gb (32G x 8)
MMC
-
-
-
-
-40°C ~ 85°C (TA)
-
-
-
AT24C02C-MAPD-T
Microchip Technology

1MHZ AUTO GRADE1 8-UDFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I²C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 450ns
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (2x3)
패키지: 8-UFDFN Exposed Pad
재고5,632
EEPROM
EEPROM
2Kb (256 x 8)
I²C
1MHz
5ms
450ns
2.5V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-UDFN (2x3)
GS832018AGT-333I
GSI Technology Inc.

IC SRAM 36MBIT PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, Standard
  • Memory Size: 36Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 333 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.3V ~ 2.7V, 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 100°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (20x14)
패키지: -
Request a Quote
SRAM
SRAM - Synchronous, Standard
36Mbit
Parallel
333 MHz
-
-
2.3V ~ 2.7V, 3V ~ 3.6V
-40°C ~ 100°C (TJ)
Surface Mount
100-LQFP
100-TQFP (20x14)
M95P32-IXMGT-E
STMicroelectronics

Linear IC's

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 32Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 80 MHz
  • Write Cycle Time - Word, Page: 1.5ms
  • Access Time: 11 ns
  • Voltage - Supply: 1.6V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-UFDFPN (4x4)
패키지: -
재고14,955
EEPROM
EEPROM
32Mbit
SPI - Quad I/O
80 MHz
1.5ms
11 ns
1.6V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-UDFN Exposed Pad
8-UFDFPN (4x4)
94-3447PBF
Infineon Technologies

MOSFET

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IS46LD32640B-25BLA1-TR
ISSI, Integrated Silicon Solution Inc

IC DRAM

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR2-S4
  • Memory Size: 2Gbit
  • Memory Interface: HSUL_12
  • Clock Frequency: 400 MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5 ns
  • Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 134-TFBGA
  • Supplier Device Package: 134-TFBGA (10x11.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR2-S4
2Gbit
HSUL_12
400 MHz
15ns
5.5 ns
1.14V ~ 1.3V, 1.7V ~ 1.95V
-40°C ~ 85°C (TC)
Surface Mount
134-TFBGA
134-TFBGA (10x11.5)
N25Q032A13EF440F
Alliance Memory, Inc.

IC FLASH 32MBIT SPI 8UFDFPN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 32Mbit
  • Memory Interface: SPI
  • Clock Frequency: 108 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-UFDFPN (MLP8) (4x3)
패키지: -
Request a Quote
FLASH
FLASH - NOR
32Mbit
SPI
108 MHz
5ms
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-UDFN Exposed Pad
8-UFDFPN (MLP8) (4x3)
W66BM6NBUAGJ
Winbond Electronics

IC DRAM 2GBIT LVSTL 11 200WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 2Gbit
  • Memory Interface: LVSTL_11
  • Clock Frequency: 1.866 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-WFBGA
  • Supplier Device Package: 200-WFBGA (10x14.5)
패키지: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
2Gbit
LVSTL_11
1.866 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
200-WFBGA
200-WFBGA (10x14.5)
AT25640A-10TQ-2-7
Atmel

IC EEPROM 64KBIT SPI 5MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kbit
  • Memory Interface: SPI
  • Clock Frequency: 5 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 40 ns
  • Voltage - Supply: 2.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: -
Request a Quote
EEPROM
EEPROM
64Kbit
SPI
5 MHz
5ms
40 ns
2.7V ~ 5.5V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
X28C010NM-12
Xicor-Division of Intersil

IC EEPROM 1MBIT PARALLEL 32CLCC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Mbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ms
  • Access Time: 120 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -55°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 32-CLCC
  • Supplier Device Package: 32-CLCC (11.43x13.97)
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EEPROM
EEPROM
1Mbit
Parallel
-
10ms
120 ns
4.5V ~ 5.5V
-55°C ~ 125°C
Surface Mount
32-CLCC
32-CLCC (11.43x13.97)