페이지 985 - 메모리 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
W632GG6KB15J	Winbond Electronics	IC SDRAM 2GBIT 96WBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 667MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,984	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	667MHz	-	20ns	1.425 V ~ 1.575 V	-40°C ~ 105°C (TC)	-	-	-
M58WR064KU70D16	Micron Technology Inc.	IC FLASH PAR NOR SLC 64M DIE Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: 66MHz Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,552	FLASH	FLASH - NOR	64Mb (4M x 16)	Parallel	66MHz	70ns	70ns	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	-	-	-
M29W128GL70N3F TR	Micron Technology Inc.	IC FLASH 128MBIT 70NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8, 8M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	패키지: 56-TFSOP (0.724", 18.40mm Width)	재고5,600	FLASH	FLASH - NOR	128Mb (16M x 8, 8M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
W972GG6JB-18	Winbond Electronics	IC SDRAM 2GBIT 533MHZ 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: 350ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-WBGA (11x13)	패키지: 84-TFBGA	재고4,608	DRAM	SDRAM - DDR2	2Gb (128M x 16)	Parallel	533MHz	15ns	350ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-WBGA (11x13)
W971GG6KB-18	Winbond Electronics	IC SDRAM 1GBIT 533MHZ 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: 15ns Access Time: 350ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-WBGA (8x12.5)	패키지: 84-TFBGA	재고17,100	DRAM	SDRAM - DDR2	1Gb (64M x 16)	Parallel	533MHz	15ns	350ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	Surface Mount	84-TFBGA	84-WBGA (8x12.5)
IDT71V3577SA85BG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 8.5NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: 119-BGA	재고3,568	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	-	-	8.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IDT71T75602S100PFG	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 100MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 100MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	패키지: 100-LQFP	재고6,256	SRAM	SRAM - Synchronous ZBT	18Mb (512K x 36)	Parallel	100MHz	-	5ns	2.375 V ~ 2.625 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
AT49LV002N-70VI	Microchip Technology	IC FLASH 2MBIT 70NS 32VSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 70ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-VSOP	패키지: 32-TFSOP (0.488", 12.40mm Width)	재고6,624	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	70ns	3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-VSOP
70V659S10BC8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 10NS 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	패키지: 256-LBGA	재고3,136	SRAM	SRAM - Dual Port, Asynchronous	4.5Mb (128K x 36)	Parallel	-	10ns	10ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
MT29TZZZ7D7JKKBT-107 W.97V TR	Micron Technology Inc.	MLC EMMC/LPDDR3 280G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,584	-	-	-	-	-	-	-	-	-	-	-	-
MTFC32GALAHAM-WT TR	Micron Technology Inc.	IC FLASH 256GBIT 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,256	FLASH	FLASH - NAND	256Gb (32G x 8)	MMC	-	-	-	-	-25°C ~ 85°C (TA)	-	-	-
7005L20PFGI8	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 20NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	패키지: 64-LQFP	재고3,472	SRAM	SRAM - Dual Port, Asynchronous	64Kb (8K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
W631GU6KB12I	Winbond Electronics	IC SDRAM 1GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-WBGA (9x13)	패키지: 96-TFBGA	재고2,336	DRAM	SDRAM - DDR3L	1Gb (64M x 16)	Parallel	800MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-WBGA (9x13)
SST39WF800B-70-4I-B3KE	Microchip Technology	IC FLASH 8MBIT 70NS 48TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mb (512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 40µs Access Time: 70ns Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-TFBGA	패키지: 48-TFBGA	재고12,552	FLASH	FLASH	8Mb (512K x 16)	Parallel	-	40µs	70ns	1.65 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-TFBGA
24LC02BHT-E/MS	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고4,512	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
24LC024HT-I/SN	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 400ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고32,532	EEPROM	EEPROM	2Kb (256 x 8)	I2C	1MHz	5ms	400ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
24LC512-I/ST14	Microchip Technology	IC EEPROM 512KBIT 400KHZ 14TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	패키지: 14-TSSOP (0.173", 4.40mm Width)	재고23,040	EEPROM	EEPROM	512Kb (64K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	14-TSSOP (0.173", 4.40mm Width)	14-TSSOP
AT25XE011-XMHN-B	Adesto Technologies	IC FLASH 1MBIT 104MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 12µs, 3ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: 8-TSSOP (0.173", 4.40mm Width)	재고20,178	FLASH	FLASH	1Mb (128K x 8)	SPI	104MHz	12µs, 3ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MT40A1G8SA-062E:E	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.6GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,424	DRAM	SDRAM - DDR4	8Gb (1G x 8)	Parallel	1.6GHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	-	-	-
S29PL032J70BAW120	Cypress Semiconductor Corp	IC FLASH 32M PARALLEL 48FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-FBGA (8.15x6.15)	패키지: 48-VFBGA	재고6,752	FLASH	FLASH - NOR	32Mb (2M x 16)	Parallel	-	70ns	70ns	2.7 V ~ 3.6 V	-25°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-FBGA (8.15x6.15)
S25FL164K0XWEI009	Cypress Semiconductor Corp	IC FLASH 64MBIT 108MHZ WAFER Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Wafer	패키지: Die	재고2,832	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O	108MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Wafer
R1EX25016ATA00A-S0	Renesas Electronics Corporation	IC EEPROM 16KBIT SPI 5MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kbit Memory Interface: SPI Clock Frequency: 5 MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	패키지: -	Request a Quote	EEPROM	EEPROM	16Kbit	SPI	5 MHz	5ms	-	1.8V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
CY7C1362A-200BGC	Cypress Semiconductor Corp	IC SRAM 9MBIT PARALLEL 119PBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, SDR Memory Size: 9Mbit Memory Interface: Parallel Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: 3 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	패키지: -	Request a Quote	SRAM	SRAM - Synchronous, SDR	9Mbit	Parallel	200 MHz	-	3 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
AT25EU0011A-SSHN-T	Renesas Electronics Corporation	IC FLASH 1MB SPI 85 MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 85 MHz Write Cycle Time - Word, Page: 8ms Access Time: - Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: -	재고10,908	FLASH	FLASH - NOR	1Mbit	SPI - Quad I/O, QPI	85 MHz	8ms	-	1.65V ~ 3.6V	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IM2516SDBATG-6I	Intelligent Memory Ltd.	SDRAM, 256MB, 3.3V, 16MX16, 166M Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 2ns Access Time: 5.5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	패키지: -	Request a Quote	DRAM	SDRAM	256Mbit	LVTTL	166 MHz	2ns	5.5 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
7130LA15PDG	Renesas Electronics Corporation	IC SRAM Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-PDIP	패키지: -	Request a Quote	SRAM	SRAM - Dual Port, Asynchronous	8Kbit	Parallel	-	15ns	15 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-PDIP
GD25LQ255EWIGR	GigaDevice Semiconductor (HK) Limited	256MB, 1.8V, SPI NOR, WSON8 Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 256Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 60µs, 2.4ms Access Time: 6 ns Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (5x6)	패키지: -	재고7,509	FLASH	FLASH - NOR (SLC)	256Mbit	SPI - Quad I/O, QPI	133 MHz	60µs, 2.4ms	6 ns	1.65V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (5x6)
MT29F4T08EULEEM4-QJ-E-TR	Micron Technology Inc.	TLC 4T 512GX8 LBGA 8DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

W632GG6KB15J

Winbond Electronics

IC SDRAM 2GBIT 96WBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 667MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,984

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

667MHz

-

20ns

1.425 V ~ 1.575 V

-40°C ~ 105°C (TC)

-

M58WR064KU70D16

Micron Technology Inc.

IC FLASH PAR NOR SLC 64M DIE

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,552

FLASH

FLASH - NOR

64Mb (4M x 16)

Parallel

66MHz

70ns

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

-

M29W128GL70N3F TR

Micron Technology Inc.

IC FLASH 128MBIT 70NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8, 8M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

패키지: 56-TFSOP (0.724", 18.40mm Width)

재고5,600

FLASH

FLASH - NOR

128Mb (16M x 8, 8M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

W972GG6JB-18

Winbond Electronics

IC SDRAM 2GBIT 533MHZ 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 350ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-WBGA (11x13)

패키지: 84-TFBGA

재고4,608

DRAM

SDRAM - DDR2

2Gb (128M x 16)

Parallel

533MHz

15ns

350ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-WBGA (11x13)

W971GG6KB-18

Winbond Electronics

IC SDRAM 1GBIT 533MHZ 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 350ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-WBGA (8x12.5)

패키지: 84-TFBGA

재고17,100

DRAM

SDRAM - DDR2

1Gb (64M x 16)

Parallel

533MHz

15ns

350ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

Surface Mount

84-TFBGA

84-WBGA (8x12.5)

IDT71V3577SA85BG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8.5NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: 119-BGA

재고3,568

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

-

8.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IDT71T75602S100PFG

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 100MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 100MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

패키지: 100-LQFP

재고6,256

SRAM

SRAM - Synchronous ZBT

18Mb (512K x 36)

Parallel

100MHz

-

5ns

2.375 V ~ 2.625 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

AT49LV002N-70VI

Microchip Technology

IC FLASH 2MBIT 70NS 32VSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 70ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP

패키지: 32-TFSOP (0.488", 12.40mm Width)

재고6,624

FLASH

2Mb (256K x 8)

Parallel

-

50µs

70ns

3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-VSOP

70V659S10BC8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 10NS 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

패키지: 256-LBGA

재고3,136

SRAM

SRAM - Dual Port, Asynchronous

4.5Mb (128K x 36)

Parallel

-

10ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

MT29TZZZ7D7JKKBT-107 W.97V TR

Micron Technology Inc.

MLC EMMC/LPDDR3 280G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,584

-

MTFC32GALAHAM-WT TR

Micron Technology Inc.

IC FLASH 256GBIT 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,256

FLASH

FLASH - NAND

256Gb (32G x 8)

MMC

-

-25°C ~ 85°C (TA)

-

7005L20PFGI8

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 20NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

패키지: 64-LQFP

재고3,472

SRAM

SRAM - Dual Port, Asynchronous

64Kb (8K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

W631GU6KB12I

Winbond Electronics

IC SDRAM 1GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-WBGA (9x13)

패키지: 96-TFBGA

재고2,336

DRAM

SDRAM - DDR3L

1Gb (64M x 16)

Parallel

800MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-WBGA (9x13)

SST39WF800B-70-4I-B3KE

Microchip Technology

IC FLASH 8MBIT 70NS 48TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mb (512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 40µs
Access Time: 70ns
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA

패키지: 48-TFBGA

재고12,552

FLASH

8Mb (512K x 16)

Parallel

-

40µs

70ns

1.65 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

24LC02BHT-E/MS

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고4,512

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

24LC024HT-I/SN

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고32,532

EEPROM

2Kb (256 x 8)

I2C

1MHz

5ms

400ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

24LC512-I/ST14

Microchip Technology

IC EEPROM 512KBIT 400KHZ 14TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

패키지: 14-TSSOP (0.173", 4.40mm Width)

재고23,040

EEPROM

512Kb (64K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

14-TSSOP (0.173", 4.40mm Width)

14-TSSOP

AT25XE011-XMHN-B

Adesto Technologies

IC FLASH 1MBIT 104MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 12µs, 3ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: 8-TSSOP (0.173", 4.40mm Width)

재고20,178

FLASH

1Mb (128K x 8)

SPI

104MHz

12µs, 3ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MT40A1G8SA-062E:E

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.6GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,424

DRAM

SDRAM - DDR4

8Gb (1G x 8)

Parallel

1.6GHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

-

S29PL032J70BAW120

Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 48FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)

패키지: 48-VFBGA

재고6,752

FLASH

FLASH - NOR

32Mb (2M x 16)

Parallel

-

70ns

2.7 V ~ 3.6 V

-25°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-FBGA (8.15x6.15)

S25FL164K0XWEI009

Cypress Semiconductor Corp

IC FLASH 64MBIT 108MHZ WAFER

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Wafer

패키지: Die

재고2,832

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O

108MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

Die

Wafer

R1EX25016ATA00A-S0

Renesas Electronics Corporation

IC EEPROM 16KBIT SPI 5MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kbit
Memory Interface: SPI
Clock Frequency: 5 MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

패키지: -

Request a Quote

EEPROM

16Kbit

SPI

5 MHz

5ms

-

1.8V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

CY7C1362A-200BGC

Cypress Semiconductor Corp

IC SRAM 9MBIT PARALLEL 119PBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, SDR
Memory Size: 9Mbit
Memory Interface: Parallel
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: 3 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

패키지: -

Request a Quote

SRAM

SRAM - Synchronous, SDR

9Mbit

Parallel

200 MHz

-

3 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

AT25EU0011A-SSHN-T

Renesas Electronics Corporation

IC FLASH 1MB SPI 85 MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 85 MHz
Write Cycle Time - Word, Page: 8ms
Access Time: -
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: -

재고10,908

FLASH

FLASH - NOR

1Mbit

SPI - Quad I/O, QPI

85 MHz

8ms

-

1.65V ~ 3.6V

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IM2516SDBATG-6I

Intelligent Memory Ltd.

SDRAM, 256MB, 3.3V, 16MX16, 166M

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 2ns
Access Time: 5.5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

패키지: -

Request a Quote

DRAM

SDRAM

256Mbit

LVTTL

166 MHz

2ns

5.5 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

7130LA15PDG

Renesas Electronics Corporation

IC SRAM

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-PDIP

패키지: -

Request a Quote

SRAM

SRAM - Dual Port, Asynchronous

8Kbit

Parallel

-

15ns

15 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-PDIP

GD25LQ255EWIGR

GigaDevice Semiconductor (HK) Limited

256MB, 1.8V, SPI NOR, WSON8

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 256Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 60µs, 2.4ms
Access Time: 6 ns
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (5x6)

패키지: -

재고7,509

FLASH

FLASH - NOR (SLC)

256Mbit

SPI - Quad I/O, QPI

133 MHz

60µs, 2.4ms

6 ns

1.65V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (5x6)

MT29F4T08EULEEM4-QJ-E-TR

Micron Technology Inc.

TLC 4T 512GX8 LBGA 8DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-