페이지 106 - PMIC - 게이트 구동기 | 집적 회로(IC) | Heisener Electronics
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PMIC - 게이트 구동기

기록 7,713
페이지  106/276
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRS21956STRPBF
Infineon Technologies

IC DVR HI/LOW SIDE 600V 20SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
패키지: 20-SOIC (0.295", 7.50mm Width)
재고46,416
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 3.5V
500mA, 500mA
Non-Inverting
600V
25ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SOIC
IRS21952STRPBF
Infineon Technologies

IC DRIVER HI/LO SIDE DUAL 16SOIC

  • Driven Configuration: Half-Bridge, Low-Side
  • Channel Type: Independent
  • Number of Drivers: 3
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.6V, 3.5V
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고4,896
Independent
3
N-Channel MOSFET
10 V ~ 20 V
0.6V, 3.5V
500mA, 500mA
Non-Inverting
600V
25ns, 25ns
-55°C ~ 150°C (TJ)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
ISL89162FRTBZ
Intersil

IC MOSFET DRIVER 2CH 6A 8TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 16 V
  • Logic Voltage - VIL, VIH: 1.85V, 3.15V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (3x3)
패키지: 8-WDFN Exposed Pad
재고3,680
Independent
2
N-Channel MOSFET
4.5 V ~ 16 V
1.85V, 3.15V
6A, 6A
Inverting, Non-Inverting
-
20ns, 20ns
-40°C ~ 125°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-TDFN (3x3)
VLA503-01
Powerex Inc.

IC IGBT GATE DRIVER INV/AC SERVO

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT
  • Voltage - Supply: 14 V ~ 15 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 300ns, 300ns
  • Operating Temperature: -20°C ~ 60°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 12-SIP
  • Supplier Device Package: Module
패키지: 12-SIP
재고5,248
Single
1
IGBT
14 V ~ 15 V
-
5A, 5A
Non-Inverting
-
300ns, 300ns
-20°C ~ 60°C (TA)
Through Hole
12-SIP
Module
ICL7667EBA+T
Maxim Integrated

IC MOSFET DVR DUAL PWR 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 17 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,168
Independent
2
N-Channel MOSFET
4.5 V ~ 17 V
0.8V, 2V
-
Inverting
-
20ns, 20ns
0°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MIC4421ACN
Microchip Technology

IC DRIVER MOSFET 9A LS 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 24ns
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고7,952
Single
1
N-Channel MOSFET
4.5 V ~ 18 V
0.8V, 3V
9A, 9A
Inverting
-
20ns, 24ns
0°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot TC4431CPA
Microchip Technology

IC MOSFET DRIVER 30V 1.5A 8-DIP

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 33ns
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고203,184
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 30 V
0.8V, 2.4V
1.5A, 1.5A
Inverting
-
25ns, 33ns
0°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot TC4425EPA
Microchip Technology

IC MOSFET DVR 3A DUAL HS 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 23ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고144,060
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
3A, 3A
Inverting, Non-Inverting
-
23ns, 25ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot TC4452VOA713
Microchip Technology

IC MOSFET DVR 12A HS 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 13A, 13A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 30ns, 32ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,000
Single
1
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
13A, 13A
Non-Inverting
-
30ns, 32ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
L6498LD
STMicroelectronics

PWR MGMT MOSFET/PWR DRIVER

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,712
-
-
-
-
-
-
-
-
-
-
-
-
-
hot IR2183STRPBF
Infineon Technologies

IC DRIVER HALF BRIDGE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.7V
  • Current - Peak Output (Source, Sink): 1.9A, 2.3A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고60,000
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.7V
1.9A, 2.3A
Inverting, Non-Inverting
600V
40ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot UCC27325P
Texas Instruments

IC MOSFET DRVR DUAL HS 4A 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 15 V
  • Logic Voltage - VIL, VIH: 1V, 2V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고36,336
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 15 V
1V, 2V
4A, 4A
Inverting, Non-Inverting
-
20ns, 15ns
-55°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
MAX17600ASA+
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고9,336
Independent
2
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2.1V
4A, 4A
Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR2127STRPBF
Infineon Technologies

IC DRIVER CURR SENSE 1CHAN 8SOIC

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고81,348
Single
1
IGBT, N-Channel MOSFET
12 V ~ 20 V
0.8V, 3V
250mA, 500mA
Non-Inverting
600V
80ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot LM5110-3MX/NOPB
Texas Instruments

IC DRIVER DUAL 5A NEG VOUT 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 3.5 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 3A, 5A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 14ns, 12ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고120,924
Independent
2
N-Channel MOSFET
3.5 V ~ 14 V
0.8V, 2.2V
3A, 5A
Inverting, Non-Inverting
-
14ns, 12ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR2213PBF
Infineon Technologies

IC DRIVER HIGH/LOW SIDE 14-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 20 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 1200V
  • Rise / Fall Time (Typ): 25ns, 17ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-DIP
패키지: 14-DIP (0.300", 7.62mm)
재고13,968
Independent
2
IGBT, N-Channel MOSFET
12 V ~ 20 V
6V, 9.5V
2A, 2.5A
Non-Inverting
1200V
25ns, 17ns
-55°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
14-DIP
FAN3229TMPX
Fairchild/ON Semiconductor

IC GATE DVR LOW DUAL 2A HS 8MLP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 12ns, 9ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-MLP (3x3)
패키지: 8-WDFN Exposed Pad
재고27,438
Independent
2
N-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2V
3A, 3A
Inverting, Non-Inverting
-
12ns, 9ns
-40°C ~ 125°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-MLP (3x3)
hot TC4469CPD
Microchip Technology

IC MOSFET DVR AND/INV 14DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 4
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.2A, 1.2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 15ns, 15ns
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-PDIP
패키지: 14-DIP (0.300", 7.62mm)
재고18,048
Independent
4
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.2A, 1.2A
Inverting, Non-Inverting
-
15ns, 15ns
0°C ~ 150°C (TJ)
Through Hole
14-DIP (0.300", 7.62mm)
14-PDIP
hot ZXGD3006E6TA
Diodes Incorporated

IC GATE DRVR IGBT/MOSFET SOT26

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, SiC MOSFET
  • Voltage - Supply: 40V (Max)
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 10A, 10A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 48ns, 35ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-26
패키지: SOT-23-6
재고144,000
Single
1
IGBT, SiC MOSFET
40V (Max)
-
10A, 10A
Non-Inverting
-
48ns, 35ns
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-26
BD16952EFV-ME2
Rohm Semiconductor

2CH HALF-BRIDGE GATE DRIVER

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 3 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
  • Supplier Device Package: 24-HTSSOP-B
패키지: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
재고7,328
Independent
2
N-Channel MOSFET
3 V ~ 5.5 V
-
-
Non-Inverting
-
-
-40°C ~ 150°C (TJ)
Surface Mount
24-VSSOP (0.220", 5.60mm Width) Exposed Pad
24-HTSSOP-B
ISL89164FRTCZ
Renesas Electronics America

MOSFET DRIVER 2CH 6A 8TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7.5 V ~ 16 V
  • Logic Voltage - VIL, VIH: 2.4V, 9.6V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (3x3)
패키지: 8-VFDFN Exposed Pad
재고7,920
Independent
2
N-Channel MOSFET
7.5 V ~ 16 V
2.4V, 9.6V
6A, 6A
Inverting
-
20ns, 20ns
-40°C ~ 125°C (TJ)
Surface Mount
8-VFDFN Exposed Pad
8-TDFN (3x3)
ISL6625ACRZ-T
Renesas Electronics America

IC MOSFET DRVR SYNCH RECT 8DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5.5 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -, 3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 31ns, 18ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP (2x2)
패키지: 8-VFDFN Exposed Pad
재고6,048
Synchronous
2
N-Channel MOSFET
5.5 V ~ 13.2 V
-
-, 3A
Non-Inverting
36V
31ns, 18ns
0°C ~ 125°C (TJ)
Surface Mount
8-VFDFN Exposed Pad
8-DFN-EP (2x2)
2EDL7125GXUMA1
Infineon Technologies

INT. POWERSTAGE/DRIVER PG-WSON-1

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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2EDF7275KXUMA2
Infineon Technologies

DRIVER IC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 20V
  • Logic Voltage - VIL, VIH: -, 1.65V
  • Current - Peak Output (Source, Sink): 4A, 8A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 6.5ns, 4.5ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 13-TFLGA
  • Supplier Device Package: PG-TFLGA-13-1
패키지: -
재고9,708
Independent
2
N-Channel, P-Channel MOSFET
20V
-, 1.65V
4A, 8A
Non-Inverting
-
6.5ns, 4.5ns
-40°C ~ 125°C (TA)
Surface Mount
13-TFLGA
PG-TFLGA-13-1
HIP2211FR8Z
Renesas Electronics Corporation

100V/4A HI/LI HALF BRIDGE DRIVER

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6V ~ 18V
  • Logic Voltage - VIL, VIH: 1.47V, 1.84V
  • Current - Peak Output (Source, Sink): 3A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 115 V
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN (4x4)
패키지: -
재고6,150
Independent
2
N-Channel MOSFET
6V ~ 18V
1.47V, 1.84V
3A, 4A
Non-Inverting
115 V
20ns, 20ns
-40°C ~ 125°C (TJ)
Surface Mount
8-VDFN Exposed Pad
8-DFN (4x4)
UC3706J
Texas Instruments

PUSH-PULL BASED MOSFET DRIVER

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
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CA3252M
Harris Corporation

QUAD GATED NON-INVERTING POWER D

  • Driven Configuration: Low-Side
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 600mA, 600mA
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 35 V
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SOIC
패키지: -
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Synchronous
4
N-Channel MOSFET
5V
0.8V, 2V
600mA, 600mA
Inverting, Non-Inverting
35 V
-
-40°C ~ 105°C
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SOIC
TF2181M
TF Semiconductor Solutions

600V HI-SIDE/LO-SIDE GATE DRIVER

  • Driven Configuration: High-Side and Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 1.9A, 2.3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 20ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: -
재고15,000
Independent
2
IGBT, N-Channel MOSFET
10V ~ 20V
0.8V, 2.5V
1.9A, 2.3A
Non-Inverting
-
40ns, 20ns
-40°C ~ 125°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC