이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
IC GATE DRVR HALF-BRIDGE 44PLCC
|
패키지: - |
재고2,208 |
|
3-Phase | 6 | IGBT, N-Channel, P-Channel MOSFET | 12 V ~ 20 V | - | 200mA, 350mA | Non-Inverting | 600V | - | -40°C ~ 125°C (TA) | Surface Mount | - | 44-PLCC |
||
Infineon Technologies |
IC MOSFET DRIVER SGL-CH 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고7,728 |
|
Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 6V, 9.5V | 250mA, 500mA | Non-Inverting | 600V | 80ns, 40ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Maxim Integrated |
IC MOSFET DRVR DUAL 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
재고5,424 |
|
Independent | 2 | N-Channel MOSFET | 4 V ~ 15 V | 0.8V, 2.1V | 4A, 4A | Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
Intersil |
IC MOSFET DRVR SYNC HF 6A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고7,312 |
|
Synchronous | 2 | N-Channel MOSFET | 6.8 V ~ 13.2 V | - | 2.5A, 4A | Non-Inverting | 36V | 13ns, 10ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Intersil |
IC MOSFET DRVR SYNC BUCK 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고6,208 |
|
Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
IXYS |
IC DRVR HALF BRIDGE 4A 16-MLP
|
패키지: 16-VDFN Exposed Pad |
재고7,488 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 35 V | 6V, 9.5V | - | Non-Inverting | 600V | 25ns, 17ns | -40°C ~ 125°C (TA) | Surface Mount | 16-VDFN Exposed Pad | 16-MLP (7x6) |
||
Maxim Integrated |
IC DRIVER MOSFET 6A HS 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고442,572 |
|
Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 85°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Microchip Technology |
IC MOSFET DVR 12A HS 8DFN
|
패키지: 8-VDFN Exposed Pad |
재고26,916 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 13A, 13A | Non-Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
||
STMicroelectronics |
IC DRIVER MOSFET SO20
|
패키지: 20-SOIC (0.295", 7.50mm Width) |
재고2,000 |
|
Independent | 3 | N-Channel MOSFET | 7 V ~ 18.5 V | 1V, 3V | - | Non-Inverting | - | - | -40°C ~ 150°C (TJ) | Surface Mount | 20-SOIC (0.295", 7.50mm Width) | 20-SO |
||
Microchip Technology |
IC MOSFET DRIVER 4.5A DUAL 8DFN
|
패키지: 8-VDFN Exposed Pad |
재고3,136 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 4.5A, 4.5A | Non-Inverting | - | 15ns, 18ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
||
Microchip Technology |
IC DRIVER MOSFET 3A DUAL 8-MLF
|
패키지: 8-VDFN Exposed Pad |
재고3,360 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 11ns, 11ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN (4x4) |
||
Monolithic Power Systems Inc. |
IC GATE DRIVER
|
패키지: 10-VFDFN Exposed Pad |
재고2,880 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 1V, 2.4V | 2.5A, 2.5A | Non-Inverting | 100V | 12ns, 9ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-QFN (3x3) |
||
Microchip Technology |
IC DRIVER MOSFET 6A LO SIDE 8DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고7,152 |
|
Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 6A, 6A | Non-Inverting | - | 12ns, 13ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8-DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고6,300 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.5A, 1.5A | Inverting, Non-Inverting | - | 20ns, 29ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
Intersil |
MOSFET DRIVER 2CH 5.0V 6A 8TDFN
|
패키지: 8-WDFN Exposed Pad |
재고18,036 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 16 V | 1.85V, 3.15V | 6A, 6A | Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN (3x3) |
||
Fairchild/ON Semiconductor |
IC GATE DRIVER DUAL 2A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고6,608 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER HALF-BRIDGE 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고18,828 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Inverting, Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Microchip Technology |
IC MOSFET DVR QUAD AND 14DIP
|
패키지: 14-DIP (0.300", 7.62mm) |
재고21,564 |
|
Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Non-Inverting | - | 15ns, 15ns | 0°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-PDIP |
||
Infineon Technologies |
IC DRIVER HIGH/LOW SIDE 16SOIC
|
패키지: 16-SOIC (0.295", 7.50mm Width) |
재고73,356 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 3.3 V ~ 20 V | 6V, 9.5V | 2A, 2A | Non-Inverting | 500V | 25ns, 17ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
||
Microchip Technology |
IC DRIVER MOSFET 1.5A DUAL 8-MLF
|
패키지: 8-VDFN Exposed Pad, 8-MLF? |
재고159,864 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 20ns, 18ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VDFN Exposed Pad, 8-MLF? | 8-MLF? (3x3) |
||
ON Semiconductor |
IC GATE DVR DUAL 4A 8-MLP
|
패키지: 8-WDFN Exposed Pad |
재고18,252 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 5A, 5A | Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-MLP (3x3) |
||
Renesas Electronics America |
IC MOSFET DRVR SYNC BUCK 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고128,976 |
|
Synchronous | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 1V, 2V | -, 4A | Non-Inverting | 36V | 8ns, 8ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Power Integrations |
MOD GATE DVR FF800R17KP4_B2
|
패키지: - |
재고7,776 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
||
Renesas Electronics America |
MOSFET DRIVER 2CH 6A 8TDFN
|
패키지: 8-VFDFN Exposed Pad |
재고6,656 |
|
Independent | 2 | N-Channel MOSFET | 7.5 V ~ 16 V | 2.4V, 9.6V | 6A, 6A | Inverting, Non-Inverting | - | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VFDFN Exposed Pad | 8-SOIC-EP |
||
Renesas Electronics America |
IC DVR HS DUAL MOSFET 8DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고4,496 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 2.4V | 2A, 2A | Inverting | - | 10ns, 10ns | -40°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
Microchip Technology |
12.0A SINGLE NON-INV MOSFET DRIV
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고2,992 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5V ~ 18V | 0.8V, 2V | 12A, 12A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 125°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Power Integrations |
IC GATE DRVR HALF-BRIDGE MODULE
|
패키지: - |
Request a Quote |
|
Independent | 2 | IGBT, N-Channel MOSFET | 14V ~ 16V | - | - | Inverting | - | 100ns, 80ns | -40°C ~ 85°C (TA) | Through Hole | 36-DIP Module, 24 Leads | Module |
||
Infineon Technologies |
INT. POWERSTAGE/DRIVER PG-VSON-1
|
패키지: - |
재고13,335 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |