페이지 19 - PMIC - 게이트 구동기 | 집적 회로(IC) | Heisener Electronics
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PMIC - 게이트 구동기

기록 7,713
페이지  19/276
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
LM5105SD
Texas Instruments

IC DVR GATE HALF BRIDGE 10WSON

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.2V
  • Current - Peak Output (Source, Sink): 1.8A, 1.8A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 118V
  • Rise / Fall Time (Typ): 15ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WDFN Exposed Pad
  • Supplier Device Package: 10-WSON (4x4)
패키지: 10-WDFN Exposed Pad
재고5,344
Synchronous
2
N-Channel MOSFET
8 V ~ 14 V
0.8V, 2.2V
1.8A, 1.8A
Non-Inverting
118V
15ns, 15ns
-40°C ~ 125°C (TJ)
Surface Mount
10-WDFN Exposed Pad
10-WSON (4x4)
ISL89160FBEAZ-T
Intersil

IC MOSFET DRIVER 2CH 6A 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 16 V
  • Logic Voltage - VIL, VIH: 1.22V, 2.08V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고5,568
Independent
2
N-Channel MOSFET
4.5 V ~ 16 V
1.22V, 2.08V
6A, 6A
Non-Inverting
-
20ns, 20ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
ISL6612CBZA-TR5214
Intersil

IC MOSFET DRVR SYNC BUCK 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,720
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
0°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX15025HATB+T
Maxim Integrated

IC GATE DRVR 2CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 48ns, 32ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고3,472
Independent
2
N-Channel MOSFET
6.5 V ~ 28 V
-
2A, 4A
Inverting, Non-Inverting
-
48ns, 32ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
MAX15025CATB+T
Maxim Integrated

IC GATE DRVR 2CH 16NS 10TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 28 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 42ns, 30ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고3,696
Independent
2
N-Channel MOSFET
4.5 V ~ 28 V
0.8V, 2V
2A, 4A
Inverting, Non-Inverting
-
42ns, 30ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
hot MIC4469BN
Microchip Technology

IC DRIVER MOSF QUAD 1.2A 14DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 4
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.2A, 1.2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 14ns, 13ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 14-DIP (0.300", 7.62mm)
  • Supplier Device Package: 14-DIP
패키지: 14-DIP (0.300", 7.62mm)
재고15,060
Independent
4
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.2A, 1.2A
Inverting, Non-Inverting
-
14ns, 13ns
-40°C ~ 85°C (TA)
Through Hole
14-DIP (0.300", 7.62mm)
14-DIP
hot TC4432EJA
Microchip Technology

IC MOSFET DRIVER 30V 1.5A 8-CDIP

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 33ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 8-CDIP
패키지: 8-CDIP (0.300", 7.62mm)
재고5,024
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 30 V
0.8V, 2.4V
1.5A, 1.5A
Non-Inverting
-
25ns, 33ns
-40°C ~ 150°C (TJ)
Through Hole
8-CDIP (0.300", 7.62mm)
8-CDIP
IR25601SPBF
Infineon Technologies

IC HALF BRIDGE DRIVER 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.3V
  • Current - Peak Output (Source, Sink): 60mA, 130mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 200ns, 100ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,088
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.3V
60mA, 130mA
Non-Inverting
600V
200ns, 100ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
UCC27523DGN
Texas Instruments

IC GATE DVR LO-SIDE DL 5A 8MSOP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 1V, 2.3V
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 7ns, 6ns
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-MSOP-PowerPad
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
재고7,056
Independent
2
IGBT, N-Channel MOSFET
4.5 V ~ 18 V
1V, 2.3V
5A, 5A
Inverting
-
7ns, 6ns
-40°C ~ 140°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-MSOP-PowerPad
LM25101CMAX/NOPB
Texas Instruments

IC GATE DVR HI/LO SIDE 1A 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2.3V, -
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 100V
  • Rise / Fall Time (Typ): 990ns, 715ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,144
Independent
2
N-Channel MOSFET
9 V ~ 14 V
2.3V, -
1A, 1A
Non-Inverting
100V
990ns, 715ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot L6393DTR
STMicroelectronics

IC GATE DRIVER HALF BRDGE 14SO

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 1.1V, 1.9V
  • Current - Peak Output (Source, Sink): 290mA, 430mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 75ns, 35ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SO
패키지: 14-SOIC (0.154", 3.90mm Width)
재고144,084
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
1.1V, 1.9V
290mA, 430mA
Non-Inverting
600V
75ns, 35ns
-40°C ~ 125°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SO
L6747C
STMicroelectronics

IC MOSFET DVR N-CH DUAL 8-VFDFPN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5 V ~ 12 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 3.5A, -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 41V
  • Rise / Fall Time (Typ): -
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFDFN Exposed Pad
  • Supplier Device Package: 8-VFDFPN (3x3)
패키지: 8-VFDFN Exposed Pad
재고5,472
Synchronous
2
N-Channel MOSFET
5 V ~ 12 V
0.8V, 2V
3.5A, -
Non-Inverting
41V
-
0°C ~ 125°C (TJ)
Surface Mount
8-VFDFN Exposed Pad
8-VFDFPN (3x3)
SN75451BPG4
Texas Instruments

IC PERIPHERAL DRVR DUAL HS 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 5ns, 7ns
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고5,520
Independent
2
N-Channel, P-Channel MOSFET
4.75 V ~ 5.25 V
0.8V, 2V
500mA, 500mA
Inverting
-
5ns, 7ns
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot L6387
STMicroelectronics

IC DRIVER HI/LO SIDE HV 8MINIDIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 17V (Max)
  • Logic Voltage - VIL, VIH: 1.5V, 3.6V
  • Current - Peak Output (Source, Sink): 400mA, 650mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 50ns, 30ns
  • Operating Temperature: -45°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-Mini DIP
패키지: 8-DIP (0.300", 7.62mm)
재고5,120
Independent
2
IGBT, N-Channel MOSFET
17V (Max)
1.5V, 3.6V
400mA, 650mA
Inverting
600V
50ns, 30ns
-45°C ~ 125°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-Mini DIP
hot MAX5063AASA+
Maxim Integrated

IC DRIVER HALF BRDG HS 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고24,012
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
0.8V, 2V
2A, 2A
Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot IR1167ASTRPBF
Infineon Technologies

IC SMART SECONDARY DRIVER 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 12 V ~ 18 V
  • Logic Voltage - VIL, VIH: 2V, 2.15V
  • Current - Peak Output (Source, Sink): 2A, 7A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 18ns, 10ns
  • Operating Temperature: -25°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고15,636
Single
1
N-Channel MOSFET
12 V ~ 18 V
2V, 2.15V
2A, 7A
Non-Inverting
-
18ns, 10ns
-25°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot HIP4080AIP
Intersil

IC DRIVER FULL-BRIDGE 20-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9.5 V ~ 15 V
  • Logic Voltage - VIL, VIH: 1V, 2.5V
  • Current - Peak Output (Source, Sink): 2.6A, 2.4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 95V
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 20-DIP (0.300", 7.62mm)
  • Supplier Device Package: 20-PDIP
패키지: 20-DIP (0.300", 7.62mm)
재고6,768
Synchronous
4
N-Channel MOSFET
9.5 V ~ 15 V
1V, 2.5V
2.6A, 2.4A
Non-Inverting
95V
10ns, 10ns
-40°C ~ 125°C (TJ)
Through Hole
20-DIP (0.300", 7.62mm)
20-PDIP
hot MIC4127YMME
Microchip Technology

IC DRIVER MOSFET 1.5A DUAL 8MSOP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-MSOP-EP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
재고6,864
Independent
2
N-Channel MOSFET
4.5 V ~ 20 V
0.8V, 2.4V
1.5A, 1.5A
Non-Inverting
-
20ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-MSOP-EP
FAN7171MX-F085
ON Semiconductor

IC GATE DVR HIGH SIDE 8-SOIC

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 15ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,664
Single
1
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
4A, 4A
Non-Inverting
600V
25ns, 15ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
ISL6622CBZ-T
Renesas Electronics America

IC MOSFET DVR SYNC BUCK 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,552
Synchronous
2
N-Channel MOSFET
6.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
0°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
FAN7390M1X
ON Semiconductor

IC DRIVER GATE HI/LO SIDE 14-SOP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 22 V
  • Logic Voltage - VIL, VIH: 1.2V, 2.5V
  • Current - Peak Output (Source, Sink): 4.5A, 4.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 25ns, 20ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOP
패키지: 14-SOIC (0.154", 3.90mm Width)
재고7,232
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 22 V
1.2V, 2.5V
4.5A, 4.5A
Non-Inverting
600V
25ns, 20ns
-40°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOP
ISL6208BIRZ-T
Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: 0.5V, 2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 33V
  • Rise / Fall Time (Typ): 8ns, 8ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFDFN Exposed Pad
  • Supplier Device Package: 8-DFN-EP (2x2)
패키지: 8-VFDFN Exposed Pad
재고4,336
Synchronous
2
N-Channel MOSFET
4.5 V ~ 5.5 V
0.5V, 2V
2A, 2A
Non-Inverting
33V
8ns, 8ns
-40°C ~ 125°C (TJ)
Surface Mount
8-VFDFN Exposed Pad
8-DFN-EP (2x2)
HIP2123FRTBZ-T
Renesas Electronics America

IC HALF BRIDGE FET DRIVER 9TDFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 14 V
  • Logic Voltage - VIL, VIH: 1.4V, 2.2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 114V
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 9-WDFN Exposed Pad
  • Supplier Device Package: 9-TDFN (4x4)
패키지: 9-WDFN Exposed Pad
재고2,544
Independent
2
N-Channel MOSFET
8 V ~ 14 V
1.4V, 2.2V
2A, 2A
Inverting
114V
10ns, 10ns
-55°C ~ 150°C (TJ)
Surface Mount
9-WDFN Exposed Pad
9-TDFN (4x4)
ISL6613BEIBZ
Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8EPSOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고5,040
Synchronous
2
N-Channel MOSFET
7 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
IRS2008MTRPBFXUMA1
Infineon Technologies

IC 200V HB GATE DRIVER 14VQFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10V ~ 20V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 200 V
  • Rise / Fall Time (Typ): 70ns, 30ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 14-VFQFN Exposed Pad
  • Supplier Device Package: 14-MLPQ (4x4)
패키지: -
Request a Quote
Synchronous
2
IGBT, N-Channel MOSFET
10V ~ 20V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
200 V
70ns, 30ns
-40°C ~ 125°C (TA)
Surface Mount
14-VFQFN Exposed Pad
14-MLPQ (4x4)
1SD210F2-5SNA0750G650300
Power Integrations

IGBT DRIVER P/P 1CH

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT
  • Voltage - Supply: 15.5V ~ 16.8V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 6A, 10A
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): 1200 V
  • Rise / Fall Time (Typ): 100ns, 100ns
  • Operating Temperature: -40°C ~ 85°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
패키지: -
Request a Quote
Single
1
IGBT
15.5V ~ 16.8V
-
6A, 10A
-
1200 V
100ns, 100ns
-40°C ~ 85°C
Chassis Mount
Module
Module
LTC7000ARMSE-PBF
Analog Devices Inc.

FAST 150V PROTECTED HI SIDE NMOS

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 3.5V ~ 135V
  • Logic Voltage - VIL, VIH: 1.8V, 1.7V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 14 V
  • Rise / Fall Time (Typ): 90ns, 40ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-TFSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 16-MSOP-EP
패키지: -
재고306
Single
1
N-Channel MOSFET
3.5V ~ 135V
1.8V, 1.7V
-
Non-Inverting
14 V
90ns, 40ns
-40°C ~ 125°C (TJ)
Surface Mount
16-TFSOP (0.118", 3.00mm Width) Exposed Pad
16-MSOP-EP
2EDL8033G4CXTMA1
Infineon Technologies

INT. POWERSTAGE/DRIVER

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8V ~ 17V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 3A, 6A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 120 V
  • Rise / Fall Time (Typ): 4.6ns, 3.3ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VDFN Exposed Pad
  • Supplier Device Package: PG-VDSON-10-2
패키지: -
재고15,000
Independent
2
N-Channel MOSFET
8V ~ 17V
-
3A, 6A
Non-Inverting
120 V
4.6ns, 3.3ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VDFN Exposed Pad
PG-VDSON-10-2