이미지 |
부품 번호 |
제조업체 |
설명 |
패키지 |
재고 |
수량 |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
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Infineon Technologies |
IC MOSFET DRVR N-CH DUAL 16QFN
|
패키지: 16-VFQFN Exposed Pad |
재고6,912 |
|
Synchronous | 4 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 0.7V, 1.3V | - | Non-Inverting | - | 15ns, 12ns | 0°C ~ 150°C (TJ) | Surface Mount | 16-VFQFN Exposed Pad | 16-QFN (3x3) |
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Texas Instruments |
IC MOSFET DRIVER HI SPD 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고5,376 |
|
Synchronous | 2 | N-Channel MOSFET | 4 V ~ 7 V | 0.8V, 2V | 1.2A, 1A | Non-Inverting | 42V | 17ns, 10ns | 0°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Infineon Technologies |
IC IGBT DVR 1200V DSO36
|
패키지: 36-BSSOP (0.295", 7.50mm Width) |
재고5,744 |
|
Single | 1 | IGBT | 13 V ~ 18 V | - | 1A, 1A | - | 1200V | 30ns, 60ns | -40°C ~ 150°C (TJ) | Surface Mount | 36-BSSOP (0.295", 7.50mm Width) | PG-DSO-36 |
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Infineon Technologies |
IC DVR HALF BRIDGE 14-SOIC
|
패키지: 14-SOIC (0.154", 3.90mm Width) |
재고111,252 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 290mA, 600mA | Non-Inverting | 600V | 100ns, 35ns | -40°C ~ 150°C (TJ) | Surface Mount | 14-SOIC (0.154", 3.90mm Width) | 14-SOIC |
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Powerex Inc. |
IC IGBT GATE DVR ISO 5A
|
패키지: Module |
재고3,856 |
|
Independent | 2 | IGBT | 14.2 V ~ 15.8 V | - | 24A, 24A | Non-Inverting | - | - | -25°C ~ 70°C (TA) | Chassis Mount | Module | Module |
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Microchip Technology |
IC DRIVER MOSF QUAD 1.2A 14-DIP
|
패키지: 14-DIP (0.300", 7.62mm) |
재고7,920 |
|
Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Inverting, Non-Inverting | - | 14ns, 13ns | 0°C ~ 70°C (TA) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
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Texas Instruments |
IC DVR HALF-BRIDGE HV 10WSON
|
패키지: 10-WDFN Exposed Pad |
재고5,120 |
|
Independent | 2 | N-Channel MOSFET | 9 V ~ 14 V | 2.3V, - | 3A, 3A | Non-Inverting | 118V | 430ns, 260ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-WDFN Exposed Pad | 10-WSON (4x4) |
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Texas Instruments |
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
패키지: 8-PowerSOIC (0.154", 3.90mm Width) |
재고6,432 |
|
Independent | 2 | N-Channel MOSFET | 8 V ~ 17 V | 0.8V, 2.5V | 3A, 3A | Non-Inverting | 120V | 8ns, 7ns | -40°C ~ 140°C (TJ) | Surface Mount | 8-PowerSOIC (0.154", 3.90mm Width) | 8-SO PowerPad |
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Texas Instruments |
IC MOSFET DRIVR DUAL HS 4A 8DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고3,568 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 15 V | 1V, 2V | 4A, 4A | Inverting | - | 20ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC MOSFET DVR 1A HS N-INV 8DIP
|
패키지: 8-DIP (0.300", 7.62mm) |
재고7,760 |
|
Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 2V | 1A, 1A | Non-Inverting | - | 25ns, 25ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC MOSFET DVR 85V HALF BRDG
|
패키지: 10-UFDFN Exposed Pad |
재고6,784 |
|
Independent | 2 | N-Channel MOSFET | 5.5 V ~ 16 V | 0.8V, 2.2V | 1A, 1A | Non-Inverting | 108V | 20ns, 20ns | -40°C ~ 125°C (TJ) | Surface Mount | 10-UFDFN Exposed Pad | 10-TDFN (2.5x2.5) |
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Microchip Technology |
IC MOSFET DRVR DUAL INVERT 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
재고14,892 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 20 V | 0.8V, 2.4V | 3A, 3A | Inverting | - | 11ns, 11ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC |
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Analog Devices Inc. |
IC MOSFET DVR 4A DL HS 8MSOP
|
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad |
재고29,904 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 4A, 4A | Inverting | - | 10ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad | 8-MSOP-EP |
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Intersil |
IC MOSFET DVR SYNC BUCK 10-DFN
|
패키지: 10-VFDFN Exposed Pad |
재고346,500 |
|
Synchronous | 2 | N-Channel MOSFET | 6.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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ON Semiconductor |
IC MOSFET DRVR DUAL HS 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고152,592 |
|
Independent | 2 | N-Channel MOSFET | 6.1 V ~ 18 V | 0.8V, 2.6V | 1.5A, 1.5A | Non-Inverting | - | 36ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
HIGH CURRENT IGBT GATE DRIVER
|
패키지: 16-SOIC (0.154", 3.90mm Width) |
재고25,932 |
|
Synchronous | - | IGBT | 20V | - | 7.8A, 6.8A | - | - | 18ns, 19ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Maxim Integrated |
IC MOSFET DVR DUAL PWR 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고7,504 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 17 V | 0.8V, 2V | - | Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR HIGH-SIDE 4TQFN
|
패키지: 4-UDFN Exposed Pad, 4-TMLF? |
재고38,580 |
|
Single | 1 | N-Channel MOSFET | 2.7 V ~ 9 V | 0.8V, 3V | - | Non-Inverting | - | - | -40°C ~ 125°C (TJ) | Surface Mount | 4-UDFN Exposed Pad, 4-TMLF? | 4-TQFN (1.2x1.2) |
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ON Semiconductor |
IC BRIDGE DVR P/N-CH 2A 8SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고5,728 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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ON Semiconductor |
IC GATE DVR HALF BRDG 3PH 28SOIC
|
패키지: 28-SOIC (0.295", 7.50mm Width) |
재고2,736 |
|
3-Phase | 6 | IGBT, N-Channel MOSFET | 12 V ~ 20 V | 0.8V, 2.5V | 350mA, 650mA | Inverting | 600V | 50ns, 30ns | -40°C ~ 150°C (TJ) | Surface Mount | 28-SOIC (0.295", 7.50mm Width) | 28-SOIC |
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Renesas Electronics America |
IC DRVR SYNC BUCK HF 10-DFN
|
패키지: 10-VFDFN Exposed Pad |
재고4,064 |
|
Synchronous | 2 | N-Channel MOSFET | 10.8 V ~ 13.2 V | - | 1.25A, 2A | Non-Inverting | 36V | 26ns, 18ns | 0°C ~ 125°C (TJ) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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ON Semiconductor |
IC GATE DRIVER DUAL 2A 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고4,480 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Renesas Electronics America |
IC DVR CMOS QUAD 40MHZ 16-SOIC
|
패키지: 16-SOIC (0.154", 3.90mm Width) |
재고3,952 |
|
Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 2A, 2A | Non-Inverting | - | 13.5ns, 13ns | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC |
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Renesas Electronics America |
IC PIN DRIVER 10MHZ 3ST 8-SOIC
|
패키지: 8-SOIC (0.154", 3.90mm Width) |
재고4,720 |
|
Synchronous | 2 | IGBT, N-Channel MOSFET | 4.5 V ~ 16 V | 0.6V, 2.4V | 4A, 4A | Non-Inverting | - | 4ns, 4ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Power Integrations |
GATE DRIVER CORE, SCALE-2, 4500V
|
패키지: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
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Texas Instruments |
IC GATE DRVR GAN MOSFET
|
패키지: - |
재고18,282 |
|
Independent | 2 | N-Channel MOSFET | 4.75V ~ 5.25V, 6V ~ 18V | - | 1.5A, 3A | Non-Inverting | 200 V | 500ps, 500ps | -40°C ~ 125°C (TJ) | Surface Mount, Wettable Flank | 19-WFQFN Exposed Pad | 19-WQFN (3x4) |
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Renesas Electronics Corporation |
SYNCH RECT BUCK MOSFET HI/LI INP
|
패키지: - |
Request a Quote |
|
Synchronous | 2 | N-Channel MOSFET | 4.5V ~ 5.5V | 1.65V, 1.3V | 4A, 4A | Non-Inverting | - | 15ns, 15ns | -40°C ~ 125°C (TA) | Surface Mount | 10-VFDFN Exposed Pad | 10-DFN (3x3) |
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Analog Devices Inc./Maxim Integrated |
7.6A, 12NS, SOT23/TDFN MOSFET DR
|
패키지: - |
Request a Quote |
|
Single | 1 | N-Channel MOSFET | 4V ~ 12.6V | 0.8V, 2.4V | 1.3A, 7.6A | Inverting, Non-Inverting | - | 8ns, 3.2ns | -40°C ~ 125°C (TA) | Surface Mount | SOT-23-6 | SOT-6 |