페이지 23 - PMIC - 게이트 구동기 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Channel Type	Number of Drivers	Gate Type	Voltage - Supply	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)	Input Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IR1175STR	Infineon Technologies	IC DRIVER RECT SYNC 5V 2A 20SSOP Driven Configuration: Low-Side Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4 V ~ 5.5 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 20ns, 20ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-SSOP (0.209", 5.30mm Width) Supplier Device Package: 20-SSOP	패키지: 20-SSOP (0.209", 5.30mm Width)	재고7,936	Synchronous	2	N-Channel MOSFET	4 V ~ 5.5 V	-	2A, 2A	Non-Inverting	-	20ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount	20-SSOP (0.209", 5.30mm Width)	20-SSOP
LM5101CSDX/NOPB	Texas Instruments	IC DVR HALF BRIDG 100V 1A 10WSON Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 9 V ~ 14 V Logic Voltage - VIL, VIH: 2.3V, - Current - Peak Output (Source, Sink): 1A, 1A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 118V Rise / Fall Time (Typ): 990ns, 715ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 10-WDFN Exposed Pad Supplier Device Package: 10-WSON (4x4)	패키지: 10-WDFN Exposed Pad	재고4,992	Independent	2	N-Channel MOSFET	9 V ~ 14 V	2.3V, -	1A, 1A	Non-Inverting	118V	990ns, 715ns	-40°C ~ 125°C (TJ)	Surface Mount	10-WDFN Exposed Pad	10-WSON (4x4)
LM5111-4MYX/NOPB	Texas Instruments	IC GATE DVR DUAL MOS 5A 8-EMSOP Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 3.5 V ~ 14 V Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 3A, 5A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 14ns, 12ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad Supplier Device Package: 8-MSOP-EP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad	재고2,960	Independent	2	N-Channel MOSFET	3.5 V ~ 14 V	0.8V, 2.2V	3A, 5A	Inverting, Non-Inverting	-	14ns, 12ns	-40°C ~ 125°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad	8-MSOP-EP
HIP2101IR4T	Intersil	IC DRVR HALF BRIDGE 100V 12-DFN Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 9 V ~ 14 V Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 114V Rise / Fall Time (Typ): 10ns, 10ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 12-VFDFN Exposed Pad Supplier Device Package: 12-DFN (4x4)	패키지: 12-VFDFN Exposed Pad	재고4,816	Independent	2	N-Channel MOSFET	9 V ~ 14 V	0.8V, 2.2V	2A, 2A	Non-Inverting	114V	10ns, 10ns	-55°C ~ 150°C (TJ)	Surface Mount	12-VFDFN Exposed Pad	12-DFN (4x4)
MIC4423BWM	Microchip Technology	IC DRIVER MOSFET 3A DUAL 16-SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 3A, 3A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 28ns, 32ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.295", 7.50mm Width)	재고13,524	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 18 V	0.8V, 2.4V	3A, 3A	Inverting	-	28ns, 32ns	-40°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
MIC4101BM	Microchip Technology	IC DRIVER MOSFET 100V TTL 8-SOIC Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 9 V ~ 16 V Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 118V Rise / Fall Time (Typ): 400ns, 400ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고264,708	Independent	2	N-Channel MOSFET	9 V ~ 16 V	0.8V, 2.2V	2A, 2A	Non-Inverting	118V	400ns, 400ns	-40°C ~ 125°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TC426EUA713	Microchip Technology	IC MOSFET DVR 1.5A DUAL HS 8MSOP Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 1.5A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 30ns, 30ns Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고7,104	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 18 V	0.8V, 2.4V	1.5A, 1.5A	Inverting	-	30ns, 30ns	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
IRS26302DJPBF	Infineon Technologies	IC BRIDGE +1 GATE DVR 3PH 44PLCC Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 125ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 44-LCC (J-Lead), 32 Leads Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)	패키지: 44-LCC (J-Lead), 32 Leads	재고5,072	3-Phase	6	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	200mA, 350mA	Non-Inverting	600V	125ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount	44-LCC (J-Lead), 32 Leads	44-PLCC, 32 Leads (16.58x16.58)
IR2135STRPBF	Infineon Technologies	IC DRIVER BRIDGE 3PHASE 28SOIC Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 90ns, 40ns Operating Temperature: 125°C (TJ) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	패키지: 28-SOIC (0.295", 7.50mm Width)	재고24,000	3-Phase	6	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.2V	250mA, 500mA	Inverting	600V	90ns, 40ns	125°C (TJ)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
MAX620EWN+	Maxim Integrated	IC DRVR MOSFET QUAD 18-SOIC Driven Configuration: High-Side Channel Type: Independent Number of Drivers: 4 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 16.5 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): - Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 1.7µs, 2.5µs Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 18-SOIC (0.295", 7.50mm Width) Supplier Device Package: 18-SOIC	패키지: 18-SOIC (0.295", 7.50mm Width)	재고5,936	Independent	4	N-Channel MOSFET	4.5 V ~ 16.5 V	0.8V, 2.4V	-	Non-Inverting	-	1.7µs, 2.5µs	-40°C ~ 85°C (TA)	Surface Mount	18-SOIC (0.295", 7.50mm Width)	18-SOIC
UC3710NG4	Texas Instruments	IC HIGH CURRENT FET DRVR 8-DIP Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 4.7 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 6A, 6A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 85ns, 85ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고4,080	Single	1	IGBT, N-Channel MOSFET	4.7 V ~ 18 V	0.8V, 2V	6A, 6A	Inverting, Non-Inverting	-	85ns, 85ns	-55°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
TC4467EPD	Microchip Technology	IC MOSFET DVR QUAD NAND 14DIP Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 4 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.2A, 1.2A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 15ns, 15ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-PDIP	패키지: 14-DIP (0.300", 7.62mm)	재고5,008	Independent	4	N-Channel, P-Channel MOSFET	4.5 V ~ 18 V	0.8V, 2.4V	1.2A, 1.2A	Inverting	-	15ns, 15ns	-40°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-PDIP
TPS2830PWPG4	Texas Instruments	IC NONINV SYN FET DRVR 14-HTSSOP Driven Configuration: High-Side Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 15 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 2.7A, 2.4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 28V Rise / Fall Time (Typ): 50ns, 50ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad Supplier Device Package: 14-HTSSOP	패키지: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad	재고4,192	Synchronous	2	N-Channel MOSFET	4.5 V ~ 15 V	-	2.7A, 2.4A	Non-Inverting	28V	50ns, 50ns	-40°C ~ 125°C (TJ)	Surface Mount	14-TSSOP (0.173", 4.40mm Width) Exposed Pad	14-HTSSOP
STSR2PCD	STMicroelectronics	IC SMART DRIVER SYNC 8-SOIC Driven Configuration: Low-Side Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 5.5 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 2A, 3.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 40ns, 30ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,280	Synchronous	2	N-Channel MOSFET	4.5 V ~ 5.5 V	-	2A, 3.5A	Non-Inverting	-	40ns, 30ns	-40°C ~ 125°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ADP3635ARHZ-RL	Analog Devices Inc.	IC MOSFET DVR 4A DL HS 8MSOP Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 9.5 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 10ns, 10ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad Supplier Device Package: 8-MSOP-EP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad	재고3,008	Independent	2	N-Channel MOSFET	9.5 V ~ 18 V	0.8V, 2V	4A, 4A	Inverting, Non-Inverting	-	10ns, 10ns	-40°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad	8-MSOP-EP
TC4426VMF713	Microchip Technology	IC MOSFET DVR 1.5A DUAL HS 8DFN Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 1.5A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 19ns, 19ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN-S (6x5)	패키지: 8-VDFN Exposed Pad	재고5,584	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 18 V	0.8V, 2.4V	1.5A, 1.5A	Inverting	-	19ns, 19ns	-40°C ~ 150°C (TJ)	Surface Mount	8-VDFN Exposed Pad	8-DFN-S (6x5)
1EDN7512GXTMA1	Infineon Technologies	IC GATE DVR LOW SIDE 1CH 6WSOP Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 20 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 4A, 8A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 6.5ns, 4.5ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Supplier Device Package: PG-WSON-6-1	패키지: 6-WDFN Exposed Pad	재고4,400	Single	1	N-Channel MOSFET	4.5 V ~ 20 V	-	4A, 8A	Inverting, Non-Inverting	-	6.5ns, 4.5ns	-40°C ~ 150°C (TJ)	Surface Mount	6-WDFN Exposed Pad	PG-WSON-6-1
UCC27423QDRQ1	Texas Instruments	IC MOSFET DVR DUAL HS 4A 8-SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4 V ~ 15 V Logic Voltage - VIL, VIH: 1V, 2V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 20ns, 15ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고293,460	Independent	2	N-Channel, P-Channel MOSFET	4 V ~ 15 V	1V, 2V	4A, 4A	Inverting	-	20ns, 15ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
2EDN8523FXTMA1	Infineon Technologies	IC GATE DRVR 8DSO Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 20 V Logic Voltage - VIL, VIH: 1.2V, 1.9V Current - Peak Output (Source, Sink): 5A, 5A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 5.3ns, 4.5ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: PG-DSO-8	패키지: 8-SOIC (0.154", 3.90mm Width)	재고19,278	Independent	2	N-Channel MOSFET	4.5 V ~ 20 V	1.2V, 1.9V	5A, 5A	Inverting	-	5.3ns, 4.5ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	PG-DSO-8
EL7457CUZ	Renesas Electronics America	IC DVR CMOS QUAD 40MHZ 16-QSOP Driven Configuration: High-Side or Low-Side Channel Type: Independent Number of Drivers: 4 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 13.5ns, 13ns Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SSOP (0.154", 3.90mm Width) Supplier Device Package: 16-QSOP	패키지: 16-SSOP (0.154", 3.90mm Width)	재고7,224	Independent	4	N-Channel, P-Channel MOSFET	4.5 V ~ 18 V	0.8V, 2V	2A, 2A	Non-Inverting	-	13.5ns, 13ns	-40°C ~ 85°C (TA)	Surface Mount	16-SSOP (0.154", 3.90mm Width)	16-QSOP
DGD0507AFN-7	Diodes Incorporated	HVGATEDRIVERW-DFN3030-10 Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Supplier Device Package: W-DFN3030-10	패키지: 10-WFDFN Exposed Pad	재고5,536	-	-	-	-	-	-	-	-	-	-	Surface Mount	10-WFDFN Exposed Pad	W-DFN3030-10
HIP2122FRTBZ	Renesas Electronics America	IC HALF BRIDGE FET DRIVER 9TDFN Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 8 V ~ 14 V Logic Voltage - VIL, VIH: 3.7V, 7.93V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Inverting High Side Voltage - Max (Bootstrap): 114V Rise / Fall Time (Typ): 10ns, 10ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 9-WDFN Exposed Pad Supplier Device Package: 9-TDFN (4x4)	패키지: 9-WDFN Exposed Pad	재고7,648	Independent	2	N-Channel MOSFET	8 V ~ 14 V	3.7V, 7.93V	2A, 2A	Inverting	114V	10ns, 10ns	-55°C ~ 150°C (TJ)	Surface Mount	9-WDFN Exposed Pad	9-TDFN (4x4)
ISL6608CBZ	Renesas Electronics America	IC MOSFET DRVR SYNC BUCK 8-SOIC Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 5.5 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 22V Rise / Fall Time (Typ): 8ns, 8ns Operating Temperature: 0°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,464	Synchronous	2	N-Channel MOSFET	4.5 V ~ 5.5 V	-	2A, 2A	Non-Inverting	22V	8ns, 8ns	0°C ~ 125°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
ISL6620CRZ-T	Renesas Electronics America	IC MOSFET DVR SYNC BUCK 10-DFN Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 5.5 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 36V Rise / Fall Time (Typ): 8ns, 8ns Operating Temperature: 0°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 10-VFDFN Exposed Pad Supplier Device Package: 10-DFN (3x3)	패키지: 10-VFDFN Exposed Pad	재고15,600	Synchronous	2	N-Channel MOSFET	4.5 V ~ 5.5 V	-	2A, 2A	Non-Inverting	36V	8ns, 8ns	0°C ~ 125°C (TJ)	Surface Mount	10-VFDFN Exposed Pad	10-DFN (3x3)
DS1679J-MIL	National Semiconductor	BUS DRIVER, TTL Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 6 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5V ~ 5.5V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 250mA, 150mA Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 5ns, 6ns Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 16-CDIP (0.300", 7.62mm) Supplier Device Package: 16-CDIP	패키지: -	Request a Quote	Independent	6	N-Channel, P-Channel MOSFET	4.5V ~ 5.5V	0.8V, 2V	250mA, 150mA	Inverting	-	5ns, 6ns	-55°C ~ 125°C (TA)	Through Hole	16-CDIP (0.300", 7.62mm)	16-CDIP
1SP0335D2S1-XXXX-2-3-4	Power Integrations	PLUG-AND-PLAY GATE DRIVER, SCALE Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
RAA229620GNP-HA0	Renesas Electronics Corporation	DIGITAL DUAL OUTPUT, 12-PHASE PW Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-
GPI4TIC10DFV	GaNPower	IC GaN Power 650V 10A DFN6x8 Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: Enhanced Mode GaN FET Voltage - Supply: 3V ~ 8V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 10ns, 16ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-DFN (6x8)	패키지: -	Request a Quote	Single	1	Enhanced Mode GaN FET	3V ~ 8V	-	-	Non-Inverting	-	10ns, 16ns	-55°C ~ 150°C (TJ)	Surface Mount	8-WDFN Exposed Pad	8-DFN (6x8)

IR1175STR

Infineon Technologies

IC DRIVER RECT SYNC 5V 2A 20SSOP

Driven Configuration: Low-Side
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4 V ~ 5.5 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 20ns, 20ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Supplier Device Package: 20-SSOP

패키지: 20-SSOP (0.209", 5.30mm Width)

재고7,936

Synchronous

2

N-Channel MOSFET

4 V ~ 5.5 V

-

2A, 2A

Non-Inverting

-

20ns, 20ns

-40°C ~ 150°C (TJ)

Surface Mount

20-SSOP (0.209", 5.30mm Width)

20-SSOP

LM5101CSDX/NOPB

Texas Instruments

IC DVR HALF BRIDG 100V 1A 10WSON

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 9 V ~ 14 V
Logic Voltage - VIL, VIH: 2.3V, -
Current - Peak Output (Source, Sink): 1A, 1A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 118V
Rise / Fall Time (Typ): 990ns, 715ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-WDFN Exposed Pad
Supplier Device Package: 10-WSON (4x4)

패키지: 10-WDFN Exposed Pad

재고4,992

Independent

2

N-Channel MOSFET

9 V ~ 14 V

2.3V, -

1A, 1A

Non-Inverting

118V

990ns, 715ns

-40°C ~ 125°C (TJ)

Surface Mount

10-WDFN Exposed Pad

10-WSON (4x4)

LM5111-4MYX/NOPB

Texas Instruments

IC GATE DVR DUAL MOS 5A 8-EMSOP

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 3.5 V ~ 14 V
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 3A, 5A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 14ns, 12ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package: 8-MSOP-EP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad

재고2,960

Independent

2

N-Channel MOSFET

3.5 V ~ 14 V

0.8V, 2.2V

3A, 5A

Inverting, Non-Inverting

-

14ns, 12ns

-40°C ~ 125°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad

8-MSOP-EP

HIP2101IR4T

Intersil

IC DRVR HALF BRIDGE 100V 12-DFN

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 9 V ~ 14 V
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 114V
Rise / Fall Time (Typ): 10ns, 10ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 12-VFDFN Exposed Pad
Supplier Device Package: 12-DFN (4x4)

패키지: 12-VFDFN Exposed Pad

재고4,816

Independent

2

N-Channel MOSFET

9 V ~ 14 V

0.8V, 2.2V

2A, 2A

Non-Inverting

114V

10ns, 10ns

-55°C ~ 150°C (TJ)

Surface Mount

12-VFDFN Exposed Pad

12-DFN (4x4)

MIC4423BWM

Microchip Technology

IC DRIVER MOSFET 3A DUAL 16-SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 3A, 3A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 28ns, 32ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.295", 7.50mm Width)

재고13,524

Independent

2

N-Channel, P-Channel MOSFET

4.5 V ~ 18 V

0.8V, 2.4V

3A, 3A

Inverting

-

28ns, 32ns

-40°C ~ 150°C (TJ)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

MIC4101BM

Microchip Technology

IC DRIVER MOSFET 100V TTL 8-SOIC

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 9 V ~ 16 V
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 118V
Rise / Fall Time (Typ): 400ns, 400ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고264,708

Independent

2

N-Channel MOSFET

9 V ~ 16 V

0.8V, 2.2V

2A, 2A

Non-Inverting

118V

400ns, 400ns

-40°C ~ 125°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

TC426EUA713

Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8MSOP

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 30ns, 30ns
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고7,104

Independent

2

N-Channel, P-Channel MOSFET

4.5 V ~ 18 V

0.8V, 2.4V

1.5A, 1.5A

Inverting

-

30ns, 30ns

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

IRS26302DJPBF

Infineon Technologies

IC BRIDGE +1 GATE DVR 3PH 44PLCC

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 125ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)

패키지: 44-LCC (J-Lead), 32 Leads

재고5,072

3-Phase

6

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

200mA, 350mA

Non-Inverting

600V

125ns, 50ns

-40°C ~ 150°C (TJ)

Surface Mount

44-LCC (J-Lead), 32 Leads

44-PLCC, 32 Leads (16.58x16.58)

IR2135STRPBF

Infineon Technologies

IC DRIVER BRIDGE 3PHASE 28SOIC

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 90ns, 40ns
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

패키지: 28-SOIC (0.295", 7.50mm Width)

재고24,000

3-Phase

6

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.2V

250mA, 500mA

Inverting

600V

90ns, 40ns

125°C (TJ)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

MAX620EWN+

Maxim Integrated

IC DRVR MOSFET QUAD 18-SOIC

Driven Configuration: High-Side
Channel Type: Independent
Number of Drivers: 4
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 16.5 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): -
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 1.7µs, 2.5µs
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 18-SOIC

패키지: 18-SOIC (0.295", 7.50mm Width)

재고5,936

Independent

4

N-Channel MOSFET

4.5 V ~ 16.5 V

0.8V, 2.4V

-

Non-Inverting

-

1.7µs, 2.5µs

-40°C ~ 85°C (TA)

Surface Mount

18-SOIC (0.295", 7.50mm Width)

18-SOIC

UC3710NG4

Texas Instruments

IC HIGH CURRENT FET DRVR 8-DIP

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 4.7 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 6A, 6A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 85ns, 85ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고4,080

Single

1

IGBT, N-Channel MOSFET

4.7 V ~ 18 V

0.8V, 2V

6A, 6A

Inverting, Non-Inverting

-

85ns, 85ns

-55°C ~ 150°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

TC4467EPD

Microchip Technology

IC MOSFET DVR QUAD NAND 14DIP

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 4
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 15ns, 15ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: 14-PDIP

패키지: 14-DIP (0.300", 7.62mm)

재고5,008

Independent

4

N-Channel, P-Channel MOSFET

4.5 V ~ 18 V

0.8V, 2.4V

1.2A, 1.2A

Inverting

-

15ns, 15ns

-40°C ~ 150°C (TJ)

Through Hole

14-DIP (0.300", 7.62mm)

14-PDIP

TPS2830PWPG4

Texas Instruments

IC NONINV SYN FET DRVR 14-HTSSOP

Driven Configuration: High-Side
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 15 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 2.7A, 2.4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 28V
Rise / Fall Time (Typ): 50ns, 50ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad
Supplier Device Package: 14-HTSSOP

패키지: 14-TSSOP (0.173", 4.40mm Width) Exposed Pad

재고4,192

Synchronous

2

N-Channel MOSFET

4.5 V ~ 15 V

-

2.7A, 2.4A

Non-Inverting

28V

50ns, 50ns

-40°C ~ 125°C (TJ)

Surface Mount

14-TSSOP (0.173", 4.40mm Width) Exposed Pad

14-HTSSOP

STSR2PCD

STMicroelectronics

IC SMART DRIVER SYNC 8-SOIC

Driven Configuration: Low-Side
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 5.5 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 2A, 3.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 40ns, 30ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,280

Synchronous

2

N-Channel MOSFET

4.5 V ~ 5.5 V

-

2A, 3.5A

Non-Inverting

-

40ns, 30ns

-40°C ~ 125°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ADP3635ARHZ-RL

Analog Devices Inc.

IC MOSFET DVR 4A DL HS 8MSOP

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 9.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 10ns, 10ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package: 8-MSOP-EP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad

재고3,008

Independent

2

N-Channel MOSFET

9.5 V ~ 18 V

0.8V, 2V

4A, 4A

Inverting, Non-Inverting

-

10ns, 10ns

-40°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad

8-MSOP-EP

TC4426VMF713

Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8DFN

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 19ns, 19ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN-S (6x5)

패키지: 8-VDFN Exposed Pad

재고5,584

Independent

2

N-Channel, P-Channel MOSFET

4.5 V ~ 18 V

0.8V, 2.4V

1.5A, 1.5A

Inverting

-

19ns, 19ns

-40°C ~ 150°C (TJ)

Surface Mount

8-VDFN Exposed Pad

8-DFN-S (6x5)

1EDN7512GXTMA1

Infineon Technologies

IC GATE DVR LOW SIDE 1CH 6WSOP

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 20 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 4A, 8A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: PG-WSON-6-1

패키지: 6-WDFN Exposed Pad

재고4,400

Single

1

N-Channel MOSFET

4.5 V ~ 20 V

-

4A, 8A

Inverting, Non-Inverting

-

6.5ns, 4.5ns

-40°C ~ 150°C (TJ)

Surface Mount

6-WDFN Exposed Pad

PG-WSON-6-1

UCC27423QDRQ1

Texas Instruments

IC MOSFET DVR DUAL HS 4A 8-SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4 V ~ 15 V
Logic Voltage - VIL, VIH: 1V, 2V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 20ns, 15ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고293,460

Independent

2

N-Channel, P-Channel MOSFET

4 V ~ 15 V

1V, 2V

4A, 4A

Inverting

-

20ns, 15ns

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

2EDN8523FXTMA1

Infineon Technologies

IC GATE DRVR 8DSO

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 20 V
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: PG-DSO-8

패키지: 8-SOIC (0.154", 3.90mm Width)

재고19,278

Independent

2

N-Channel MOSFET

4.5 V ~ 20 V

1.2V, 1.9V

5A, 5A

Inverting

-

5.3ns, 4.5ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

PG-DSO-8

EL7457CUZ

Renesas Electronics America

IC DVR CMOS QUAD 40MHZ 16-QSOP

Driven Configuration: High-Side or Low-Side
Channel Type: Independent
Number of Drivers: 4
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 13.5ns, 13ns
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Supplier Device Package: 16-QSOP

패키지: 16-SSOP (0.154", 3.90mm Width)

재고7,224

Independent

4

N-Channel, P-Channel MOSFET

4.5 V ~ 18 V

0.8V, 2V

2A, 2A

Non-Inverting

-

13.5ns, 13ns

-40°C ~ 85°C (TA)

Surface Mount

16-SSOP (0.154", 3.90mm Width)

16-QSOP

DGD0507AFN-7

Diodes Incorporated

HVGATEDRIVERW-DFN3030-10

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Supplier Device Package: W-DFN3030-10

패키지: 10-WFDFN Exposed Pad

재고5,536

-

Surface Mount

10-WFDFN Exposed Pad

W-DFN3030-10

HIP2122FRTBZ

Renesas Electronics America

IC HALF BRIDGE FET DRIVER 9TDFN

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 8 V ~ 14 V
Logic Voltage - VIL, VIH: 3.7V, 7.93V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 114V
Rise / Fall Time (Typ): 10ns, 10ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-WDFN Exposed Pad
Supplier Device Package: 9-TDFN (4x4)

패키지: 9-WDFN Exposed Pad

재고7,648

Independent

2

N-Channel MOSFET

8 V ~ 14 V

3.7V, 7.93V

2A, 2A

Inverting

114V

10ns, 10ns

-55°C ~ 150°C (TJ)

Surface Mount

9-WDFN Exposed Pad

9-TDFN (4x4)

ISL6608CBZ

Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8-SOIC

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 5.5 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 22V
Rise / Fall Time (Typ): 8ns, 8ns
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,464

Synchronous

2

N-Channel MOSFET

4.5 V ~ 5.5 V

-

2A, 2A

Non-Inverting

22V

8ns, 8ns

0°C ~ 125°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

ISL6620CRZ-T

Renesas Electronics America

IC MOSFET DVR SYNC BUCK 10-DFN

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 5.5 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36V
Rise / Fall Time (Typ): 8ns, 8ns
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Supplier Device Package: 10-DFN (3x3)

패키지: 10-VFDFN Exposed Pad

재고15,600

Synchronous

2

N-Channel MOSFET

4.5 V ~ 5.5 V

-

2A, 2A

Non-Inverting

36V

8ns, 8ns

0°C ~ 125°C (TJ)

Surface Mount

10-VFDFN Exposed Pad

10-DFN (3x3)

DS1679J-MIL

National Semiconductor

BUS DRIVER, TTL

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 6
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5V ~ 5.5V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 150mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 5ns, 6ns
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 16-CDIP (0.300", 7.62mm)
Supplier Device Package: 16-CDIP

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Independent

6

N-Channel, P-Channel MOSFET

4.5V ~ 5.5V

0.8V, 2V

250mA, 150mA

Inverting

-

5ns, 6ns

-55°C ~ 125°C (TA)

Through Hole

16-CDIP (0.300", 7.62mm)

16-CDIP

1SP0335D2S1-XXXX-2-3-4

Power Integrations

PLUG-AND-PLAY GATE DRIVER, SCALE

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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-

RAA229620GNP-HA0

Renesas Electronics Corporation

DIGITAL DUAL OUTPUT, 12-PHASE PW

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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-

GPI4TIC10DFV

GaNPower

IC GaN Power 650V 10A DFN6x8

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: Enhanced Mode GaN FET
Voltage - Supply: 3V ~ 8V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 10ns, 16ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-DFN (6x8)

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Single

1

Enhanced Mode GaN FET

3V ~ 8V

-

Non-Inverting

-

10ns, 16ns

-55°C ~ 150°C (TJ)

Surface Mount

8-WDFN Exposed Pad

8-DFN (6x8)