페이지 248 - PMIC - 게이트 구동기 | 집적 회로(IC) | Heisener Electronics
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PMIC - 게이트 구동기

기록 7,713
페이지  248/276
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRS21856SPBF
Infineon Technologies

IC DVR LOW SIDE/DUAL HI 14-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3.5V
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 30ns, 20ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 14-SOIC
패키지: 14-SOIC (0.154", 3.90mm Width)
재고50,544
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 3.5V
500mA, 500mA
Non-Inverting
600V
30ns, 20ns
-55°C ~ 150°C (TJ)
Surface Mount
14-SOIC (0.154", 3.90mm Width)
14-SOIC
hot IR21368PBF
Infineon Technologies

IC DRIVER 3PHASE 600V 28DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.600", 15.24mm)
  • Supplier Device Package: 28-DIP
패키지: 28-DIP (0.600", 15.24mm)
재고12,144
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
200mA, 350mA
Inverting
600V
125ns, 50ns
-40°C ~ 150°C (TJ)
Through Hole
28-DIP (0.600", 15.24mm)
28-DIP
hot IR2136
Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 28-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.600", 15.24mm)
  • Supplier Device Package: 28-DIP
패키지: 28-DIP (0.600", 15.24mm)
재고43,332
3-Phase
6
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 3V
200mA, 350mA
Inverting
600V
125ns, 50ns
-40°C ~ 150°C (TJ)
Through Hole
28-DIP (0.600", 15.24mm)
28-DIP
ISL89161FBEAZ
Intersil

IC MOSFET DRIVER 2CH 6A 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 16 V
  • Logic Voltage - VIL, VIH: 1.22V, 2.08V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고3,920
Independent
2
N-Channel MOSFET
4.5 V ~ 16 V
1.22V, 2.08V
6A, 6A
Inverting
-
20ns, 20ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
TPIC46L03DBRG4
Texas Instruments

IC DRIVER PRE FET 6 CHAN 28-SSOP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 6
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.2mA, 1.2mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 3.5µs, 3µs
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 28-SSOP (0.209", 5.30mm Width)
  • Supplier Device Package: 28-SSOP
패키지: 28-SSOP (0.209", 5.30mm Width)
재고2,720
Independent
6
N-Channel MOSFET
4.5 V ~ 5.5 V
-
1.2mA, 1.2mA
Non-Inverting
-
3.5µs, 3µs
-40°C ~ 150°C (TJ)
Surface Mount
28-SSOP (0.209", 5.30mm Width)
28-SSOP
IX2R11M6T/R
IXYS

IC DRVR HALF BRIDGE 2A 16-MLP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 35 V
  • Logic Voltage - VIL, VIH: 6V, 9.5V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 500V
  • Rise / Fall Time (Typ): 8ns, 7ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VDFN Exposed Pad
  • Supplier Device Package: 16-MLP (7x6)
패키지: 16-VDFN Exposed Pad
재고6,112
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 35 V
6V, 9.5V
2A, 2A
Non-Inverting
500V
8ns, 7ns
-40°C ~ 150°C (TJ)
Surface Mount
16-VDFN Exposed Pad
16-MLP (7x6)
ISL6612AIRZ
Intersil

IC MOSFET DRVR SYNC BUCK 10-DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad
  • Supplier Device Package: 10-DFN (3x3)
패키지: 10-VFDFN Exposed Pad
재고5,376
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VFDFN Exposed Pad
10-DFN (3x3)
hot HIP4082IP
Intersil

IC DRIVER H-BRIDGE 16-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8.5 V ~ 15 V
  • Logic Voltage - VIL, VIH: 1V, 2.5V
  • Current - Peak Output (Source, Sink): 1.4A, 1.3A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 95V
  • Rise / Fall Time (Typ): 9ns, 9ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 16-DIP (0.300", 7.62mm)
  • Supplier Device Package: 16-PDIP
패키지: 16-DIP (0.300", 7.62mm)
재고15,876
Independent
4
N-Channel MOSFET
8.5 V ~ 15 V
1V, 2.5V
1.4A, 1.3A
Non-Inverting
95V
9ns, 9ns
-55°C ~ 150°C (TJ)
Through Hole
16-DIP (0.300", 7.62mm)
16-PDIP
5962-8850302PA
Maxim Integrated

DUAL MOSFET DRIVER

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,048
-
-
-
-
-
-
-
-
-
-
-
-
-
IXDN502D1T/R
IXYS

IC MOSF DRIVER FAST DUAL 6-DFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 7.5ns, 6.5ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-DFN (4x5)
패키지: 6-VDFN Exposed Pad
재고7,632
Independent
2
IGBT, N-Channel, P-Channel MOSFET
4.5 V ~ 30 V
0.8V, 3V
2A, 2A
Non-Inverting
-
7.5ns, 6.5ns
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-DFN (4x5)
MIC4421AZN
Microchip Technology

IC MOSFET DVR HS 9A INV 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 24ns
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고7,232
Single
1
N-Channel MOSFET
4.5 V ~ 18 V
0.8V, 3V
9A, 9A
Inverting
-
20ns, 24ns
0°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
ISL6605IRZ-T
Intersil

IC MOSFET DRVR SYNC BUCK 8-QFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: 1V, 2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 33V
  • Rise / Fall Time (Typ): 8ns, 8ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VQFN Exposed Pad
  • Supplier Device Package: 8-QFN (3x3)
패키지: 8-VQFN Exposed Pad
재고5,984
Synchronous
2
N-Channel MOSFET
4.5 V ~ 5.5 V
1V, 2V
2A, 2A
Non-Inverting
33V
8ns, 8ns
-40°C ~ 125°C (TJ)
Surface Mount
8-VQFN Exposed Pad
8-QFN (3x3)
UCC27528DSDR
Texas Instruments

IC GATE DVR LOW SIDE 8SON

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 7ns, 6ns
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-SON (3x3)
패키지: 8-WDFN Exposed Pad
재고7,568
Independent
2
IGBT, N-Channel MOSFET
4.5 V ~ 18 V
-
5A, 5A
Non-Inverting
-
7ns, 6ns
-40°C ~ 140°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-SON (3x3)
FAN3224TUMX_F085
Fairchild/ON Semiconductor

DUAL 4A HIGH SPEED LVIC FAN3224T

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고7,472
-
-
-
-
-
-
-
-
-
-
-
-
-
hot UCC27528DSDT
Texas Instruments

IC GATE DVR LOW SIDE 8SON

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 5A, 5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 7ns, 6ns
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-SON (3x3)
패키지: 8-WDFN Exposed Pad
재고6,048
Independent
2
IGBT, N-Channel MOSFET
4.5 V ~ 18 V
-
5A, 5A
Non-Inverting
-
7ns, 6ns
-40°C ~ 140°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-SON (3x3)
hot IR2301STRPBF
Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.9V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 130ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고96,984
Independent
2
IGBT, N-Channel MOSFET
5 V ~ 20 V
0.8V, 2.9V
200mA, 350mA
Non-Inverting
600V
130ns, 50ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
NCP51705MNTXG
ON Semiconductor

SIC MOSFET DRIVER

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: SiC MOSFET
  • Voltage - Supply: 10 V ~ 22 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 8ns, 8ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VFQFN Exposed Pad
  • Supplier Device Package: 24-QFN (4x4)
패키지: 24-VFQFN Exposed Pad
재고6,960
Single
1
SiC MOSFET
10 V ~ 22 V
-
6A, 6A
Inverting, Non-Inverting
-
8ns, 8ns
-55°C ~ 150°C (TJ)
Surface Mount
24-VFQFN Exposed Pad
24-QFN (4x4)
1SD312F2-MG900GXH1US53
Power Integrations

IGBT GATE DRIVER PLUG&PLAY

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,016
-
-
-
-
-
-
-
-
-
-
-
-
-
ISL89161FBEAZ-T
Renesas Electronics America

IC MOSFET DRIVER 2CH 6A 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 16 V
  • Logic Voltage - VIL, VIH: 1.22V, 2.08V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고3,872
Independent
2
N-Channel MOSFET
4.5 V ~ 16 V
1.22V, 2.08V
6A, 6A
Inverting
-
20ns, 20ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
FAN73832M
ON Semiconductor

IC DRIVER GATE HALF BRIDGE 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 15 V ~ 20 V
  • Logic Voltage - VIL, VIH: 1.2V, 2.9V
  • Current - Peak Output (Source, Sink): 350mA, 650mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 50ns, 30ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,928
Synchronous
2
IGBT, N-Channel MOSFET
15 V ~ 20 V
1.2V, 2.9V
350mA, 650mA
Non-Inverting
600V
50ns, 30ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
ISL6614IRZ
Renesas Electronics America

IC DRIVER DUAL SYNC BUCK 16-QFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VQFN Exposed Pad
  • Supplier Device Package: 16-QFN (4x4)
패키지: 16-VQFN Exposed Pad
재고5,264
Synchronous
4
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
16-VQFN Exposed Pad
16-QFN (4x4)
HIP6602BCRZA
Renesas Electronics America

IC DRVR MOSF 2CH SYC BUCK 16-QFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 15V
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VQFN Exposed Pad
  • Supplier Device Package: 16-QFN-EP (5x5)
패키지: 16-VQFN Exposed Pad
재고4,336
Synchronous
4
N-Channel MOSFET
10.8 V ~ 13.2 V
-
-
Non-Inverting
15V
20ns, 20ns
0°C ~ 125°C (TJ)
Surface Mount
16-VQFN Exposed Pad
16-QFN-EP (5x5)
SG1644J-883B
Microchip Technology

HALF BRIDGE DRIVER, NON-INVERTIN

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 20V
  • Logic Voltage - VIL, VIH: 0.7V, 2V
  • Current - Peak Output (Source, Sink): 500mA, 500mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 35ns, 30ns
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 14-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 14-CERDIP
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Independent
2
N-Channel MOSFET
4.5V ~ 20V
0.7V, 2V
500mA, 500mA
Non-Inverting
-
35ns, 30ns
-55°C ~ 125°C (TJ)
Through Hole
14-CDIP (0.300", 7.62mm)
14-CERDIP
2EDL8124GXUMA1
Infineon Technologies

INT. POWERSTAGE/DRIVER

  • Driven Configuration: High-Side and Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8V ~ 17V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 90 V
  • Rise / Fall Time (Typ): 45ns, 45ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: PG-VDSON-8-4
패키지: -
재고13,977
Independent
2
N-Channel MOSFET
8V ~ 17V
-
4A, 4A
Non-Inverting
90 V
45ns, 45ns
-40°C ~ 125°C (TJ)
Surface Mount
8-VDFN Exposed Pad
PG-VDSON-8-4
MAX5078BATT
Analog Devices Inc./Maxim Integrated

MAX5078 4A, 20NS, MOSFET DRIVER

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4V ~ 15V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 4ns, 4ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-TDFN-EP (3x3)
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Single
1
N-Channel MOSFET
4V ~ 15V
0.8V, 2.1V
4A, 4A
Inverting, Non-Inverting
-
4ns, 4ns
-40°C ~ 125°C (TA)
Surface Mount
6-WDFN Exposed Pad
6-TDFN-EP (3x3)
2EDS8265HXUMA2
Infineon Technologies

IC GATE DRIVER HALF-BRIDGE DSO16

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 20V
  • Logic Voltage - VIL, VIH: -, 1.65V
  • Current - Peak Output (Source, Sink): 4A, 8A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 6.5ns, 4.5ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: PG-DSO-16-30
패키지: -
재고5,595
Independent
2
N-Channel, P-Channel MOSFET
20V
-, 1.65V
4A, 8A
Non-Inverting
-
6.5ns, 4.5ns
-40°C ~ 125°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
PG-DSO-16-30
2CG010DBC12N
Tamura

GATE DRIVER (CORE, +15/,-15V)

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, SiC MOSFET
  • Voltage - Supply: 13V ~ 28V
  • Logic Voltage - VIL, VIH: 1.65V, 3.85V
  • Current - Peak Output (Source, Sink): 43A, 43A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 500ns, 500ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: Module
  • Supplier Device Package: Module
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Independent
2
IGBT, SiC MOSFET
13V ~ 28V
1.65V, 3.85V
43A, 43A
Non-Inverting
-
500ns, 500ns
-40°C ~ 85°C (TA)
Through Hole
Module
Module
LTC7000ARMSE-1-TRPBF
Analog Devices Inc.

FAST 150V PROTECTED HI SIDE NMOS

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 3.5V ~ 135V
  • Logic Voltage - VIL, VIH: 1.8V, 1.7V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 14 V
  • Rise / Fall Time (Typ): 90ns, 40ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-TFSOP (0.118", 3.00mm Width), 12 Leads, Exposed Pad
  • Supplier Device Package: 16-MSOP-EP
패키지: -
재고5,589
Single
1
N-Channel MOSFET
3.5V ~ 135V
1.8V, 1.7V
-
Non-Inverting
14 V
90ns, 40ns
-40°C ~ 125°C (TJ)
Surface Mount
16-TFSOP (0.118", 3.00mm Width), 12 Leads, Exposed Pad
16-MSOP-EP