페이지 252 - PMIC - 게이트 구동기 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Channel Type	Number of Drivers	Gate Type	Voltage - Supply	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)	Input Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IR21141SSPBF	Infineon Technologies	IC DRVR HALF BRIDGE 600V 24-SSOP Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT Voltage - Supply: 11.5 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 2A, 3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 24ns, 7ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SSOP (0.209", 5.30mm Width) Supplier Device Package: 24-SSOP	패키지: 24-SSOP (0.209", 5.30mm Width)	재고49,200	Independent	2	IGBT	11.5 V ~ 20 V	0.8V, 2V	2A, 3A	Non-Inverting	600V	24ns, 7ns	-40°C ~ 150°C (TJ)	Surface Mount	24-SSOP (0.209", 5.30mm Width)	24-SSOP
IR2235	Infineon Technologies	IC DRIVER 3-PHASE BRIDGE 28-DIP Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 250mA, 500mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 1200V Rise / Fall Time (Typ): 90ns, 40ns Operating Temperature: 125°C (TJ) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-DIP	패키지: 28-DIP (0.600", 15.24mm)	재고15,840	3-Phase	6	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2V	250mA, 500mA	Inverting	1200V	90ns, 40ns	125°C (TJ)	Through Hole	28-DIP (0.600", 15.24mm)	28-DIP
NCP3420MNR2G	ON Semiconductor	IC MOSFET DRIVER DUAL 12V 8-DFN Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.6 V ~ 13.2 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): - Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 35V Rise / Fall Time (Typ): 16ns, 11ns Operating Temperature: 0°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VFDFN Exposed Pad Supplier Device Package: 8-DFN (3x3)	패키지: 8-VFDFN Exposed Pad	재고5,664	Synchronous	2	N-Channel MOSFET	4.6 V ~ 13.2 V	0.8V, 2V	-	Non-Inverting	35V	16ns, 11ns	0°C ~ 150°C (TJ)	Surface Mount	8-VFDFN Exposed Pad	8-DFN (3x3)
ISL6210CRZ-T	Intersil	IC MOSFET DRIVER DUAL SYNC 16QFN Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 4 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 5.5 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 36V Rise / Fall Time (Typ): 8ns, 8ns Operating Temperature: -10°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 16-VQFN Exposed Pad Supplier Device Package: 16-QFN (4x4)	패키지: 16-VQFN Exposed Pad	재고99,960	Synchronous	4	N-Channel MOSFET	4.5 V ~ 5.5 V	-	2A, 2A	Non-Inverting	36V	8ns, 8ns	-10°C ~ 125°C (TJ)	Surface Mount	16-VQFN Exposed Pad	16-QFN (4x4)
IXDN414SI	IXYS	IC DRIVER MOSF/IGBT 14A14SOIC Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 35 V Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 14A, 14A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 22ns, 20ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	패키지: 14-SOIC (0.154", 3.90mm Width)	재고2,176	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5 V ~ 35 V	0.8V, 3.5V	14A, 14A	Non-Inverting	-	22ns, 20ns	-55°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SOIC
ISL6613BECB-T	Intersil	IC MOSFET DRVR SYNC BUCK 8EPSOIC Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 7 V ~ 13.2 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 1.25A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 36V Rise / Fall Time (Typ): 26ns, 18ns Operating Temperature: 0°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고4,784	Synchronous	2	N-Channel MOSFET	7 V ~ 13.2 V	-	1.25A, 2A	Non-Inverting	36V	26ns, 18ns	0°C ~ 125°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
HIP2100IB	Intersil	IC DRIVER HALF-BRIDGE 8-SOIC Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 9 V ~ 14 V Logic Voltage - VIL, VIH: 4V, 7V Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 114V Rise / Fall Time (Typ): 10ns, 10ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고713,604	Independent	2	N-Channel MOSFET	9 V ~ 14 V	4V, 7V	2A, 2A	Non-Inverting	114V	10ns, 10ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
NCV33152DR2	ON Semiconductor	IC DRIVER MOSFET DUAL HS 8SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 6.1 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2.6V Current - Peak Output (Source, Sink): 1.5A, 1.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 36ns, 32ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고7,344	Independent	2	N-Channel MOSFET	6.1 V ~ 18 V	0.8V, 2.6V	1.5A, 1.5A	Non-Inverting	-	36ns, 32ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IRS2118SPBF	Infineon Technologies	IC DRIVER MOSFET/IGBT 1CH 8-SOIC Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 75ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,816	Single	1	IGBT, N-Channel MOSFET	10 V ~ 20 V	6V, 9.5V	290mA, 600mA	Inverting	600V	75ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
TC4426EUA	Microchip Technology	IC MOSFET DVR 1.5A DUAL HS 8MSOP Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 1.5A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 19ns, 19ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고2,416	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 18 V	0.8V, 2.4V	1.5A, 1.5A	Inverting	-	19ns, 19ns	-40°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
2SP0115T2B0-06	Power Integrations	IC DUAL GATE DRIVER Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT Voltage - Supply: 14.5 V ~ 15.5 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 8A, 15A Input Type: - High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 5ns, 10ns Operating Temperature: -20°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,088	Independent	2	IGBT	14.5 V ~ 15.5 V	-	8A, 15A	-	600V	5ns, 10ns	-20°C ~ 85°C (TA)	-	-	-
IR21363JPBF	Infineon Technologies	IC DRIVER 3-PHASE 44-PLCC Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 12 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 200mA, 350mA Input Type: Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 125ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 44-LCC (J-Lead), 32 Leads Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)	패키지: 44-LCC (J-Lead), 32 Leads	재고5,280	3-Phase	6	IGBT, N-Channel MOSFET	12 V ~ 20 V	0.8V, 3V	200mA, 350mA	Inverting	600V	125ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount	44-LCC (J-Lead), 32 Leads	44-PLCC, 32 Leads (16.58x16.58)
TC4431COA	Microchip Technology	IC MOSFET DRIVER 30V 1.5A 8-SOIC Driven Configuration: High-Side or Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 30 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 1.5A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 33ns Operating Temperature: 0°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고512,592	Single	1	N-Channel, P-Channel MOSFET	4.5 V ~ 30 V	0.8V, 2.4V	1.5A, 1.5A	Inverting	-	25ns, 33ns	0°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IR2104SPBF	Infineon Technologies	IC DRIVER HIGH/LOW SIDE 8SOIC Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 210mA, 360mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 100ns, 50ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고57,576	Synchronous	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 3V	210mA, 360mA	Non-Inverting	600V	100ns, 50ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MCP14A0051T-E/MAY	Microchip Technology	IC MOSFET DVR 0.5A SINGLE 2X2 QF Driven Configuration: High-Side or Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 500mA, 500mA Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 40ns, 28ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-VDFN Exposed Pad Supplier Device Package: 6-DFN (2x2)	패키지: 6-VDFN Exposed Pad	재고21,756	Single	1	N-Channel, P-Channel MOSFET	4.5 V ~ 18 V	0.8V, 2V	500mA, 500mA	Inverting	-	40ns, 28ns	-40°C ~ 150°C (TJ)	Surface Mount	6-VDFN Exposed Pad	6-DFN (2x2)
IR2114SSPBF	Infineon Technologies	IC DRIVER HALF-BRIDGE 24-SSOP Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT Voltage - Supply: 11.5 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 2A, 3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 24ns, 7ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 24-SSOP (0.209", 5.30mm Width) Supplier Device Package: 24-SSOP	패키지: 24-SSOP (0.209", 5.30mm Width)	재고19,500	Independent	2	IGBT	11.5 V ~ 20 V	0.8V, 2V	2A, 3A	Non-Inverting	600V	24ns, 7ns	-40°C ~ 150°C (TJ)	Surface Mount	24-SSOP (0.209", 5.30mm Width)	24-SSOP
MAX4420CPA+	Maxim Integrated	IC DRIVER MOSFET SNGL 6A HS 8DIP Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 6A, 6A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 25ns Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고97,740	Single	1	N-Channel, P-Channel MOSFET	4.5 V ~ 18 V	0.8V, 2.4V	6A, 6A	Non-Inverting	-	25ns, 25ns	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
IRS2186PBF	Infineon Technologies	IC DRIVER HI/LO SIDE 600V 8-DIP Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 22ns, 18ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	패키지: 8-DIP (0.300", 7.62mm)	재고29,730	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 2.5V	4A, 4A	Non-Inverting	600V	22ns, 18ns	-40°C ~ 150°C (TJ)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
LM5060MM/NOPB	Texas Instruments	HIGH SIDE PROTECTION CONTROL Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel MOSFET Voltage - Supply: 5.5 V ~ 65 V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 24µA, 2.2mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width) Supplier Device Package: 10-VSSOP	패키지: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)	재고3,712	Single	1	N-Channel MOSFET	5.5 V ~ 65 V	0.8V, 2V	24µA, 2.2mA	Non-Inverting	-	-	-40°C ~ 125°C	Surface Mount	10-TFSOP, 10-MSOP (0.118", 3.00mm Width)	10-VSSOP
2SB315B-CM1200DC-34N	Power Integrations	MOD GATE DVR CM1200DC-34N Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,400	-	-	-	-	-	-	-	-	-	-	-	-	-
ISL6613BIR	Renesas Electronics America	IC MOSFET DRVR SYNC BUCK 10-DFN Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 7 V ~ 13.2 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 1.25A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 36V Rise / Fall Time (Typ): 26ns, 18ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 10-VFDFN Exposed Pad Supplier Device Package: 10-DFN (3x3)	패키지: 10-VFDFN Exposed Pad	재고6,304	Synchronous	2	N-Channel MOSFET	7 V ~ 13.2 V	-	1.25A, 2A	Non-Inverting	36V	26ns, 18ns	-40°C ~ 125°C (TJ)	Surface Mount	10-VFDFN Exposed Pad	10-DFN (3x3)
ISL6612IBZ	Renesas Electronics America	IC MOSFET DRVR SYNC BUCK 8-SOIC Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 10.8 V ~ 13.2 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 1.25A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 36V Rise / Fall Time (Typ): 26ns, 18ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고148,140	Synchronous	2	N-Channel MOSFET	10.8 V ~ 13.2 V	-	1.25A, 2A	Non-Inverting	36V	26ns, 18ns	-40°C ~ 125°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IGD515EI-34	Power Integrations	GATE DRIVER CORE SCALE-1 3300V Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,680	-	-	-	-	-	-	-	-	-	-	-	-	-
MCP14A1201T-E/MNY	Microchip Technology	12.0A SINGLE INV MOSFET DRIVER Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5V ~ 18V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 12A, 12A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 25ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	패키지: 8-WFDFN Exposed Pad	재고5,424	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2V	12A, 12A	Inverting	-	25ns, 25ns	-40°C ~ 125°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
MCP14A1201-E/SN	Microchip Technology	12.0A SINGLE INV MOSFET DRIVER Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Voltage - Supply: 4.5V ~ 18V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 12A, 12A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 25ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,828	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2V	12A, 12A	Inverting	-	25ns, 25ns	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
LT8672IDDB#TRPBF	Linear Technology	ACTIVE RECTIFIER CNTR W/ REVERSE Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel MOSFET Voltage - Supply: 3V ~ 42V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 10-WFDFN Exposed Pad Supplier Device Package: 10-DFN (3x2)	패키지: 10-WFDFN Exposed Pad	재고4,800	Single	1	N-Channel MOSFET	3V ~ 42V	-	-	Non-Inverting	-	-	-40°C ~ 125°C (TJ)	Surface Mount	10-WFDFN Exposed Pad	10-DFN (3x2)
HIP2210FRTZ	Renesas Electronics Corporation	100V/4A PWM INPUT HALF BRIDGE DR Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 6V ~ 18V Logic Voltage - VIL, VIH: 1.47V, 1.84V Current - Peak Output (Source, Sink): 3A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 115 V Rise / Fall Time (Typ): 20ns, 20ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 10-WDFN Exposed Pad Supplier Device Package: 10-TDFN (4x4)	패키지: -	재고2,469	Synchronous	2	N-Channel MOSFET	6V ~ 18V	1.47V, 1.84V	3A, 4A	Non-Inverting	115 V	20ns, 20ns	-40°C ~ 125°C (TJ)	Surface Mount	10-WDFN Exposed Pad	10-TDFN (4x4)
RT9611AGQW	Richtek USA Inc.	IC BUCK MOSFET DRVR WDFN-8E Driven Configuration: High-Side or Low-Side Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5V ~ 13.5V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 15 V Rise / Fall Time (Typ): 12ns, 12ns Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-WDFN-EL (3x3)	패키지: -	재고4,470	Synchronous	2	N-Channel MOSFET	4.5V ~ 13.5V	-	-	Non-Inverting	15 V	12ns, 12ns	-40°C ~ 85°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-WDFN-EL (3x3)

IR21141SSPBF

Infineon Technologies

IC DRVR HALF BRIDGE 600V 24-SSOP

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT
Voltage - Supply: 11.5 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 24ns, 7ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Supplier Device Package: 24-SSOP

패키지: 24-SSOP (0.209", 5.30mm Width)

재고49,200

Independent

2

IGBT

11.5 V ~ 20 V

0.8V, 2V

2A, 3A

Non-Inverting

600V

24ns, 7ns

-40°C ~ 150°C (TJ)

Surface Mount

24-SSOP (0.209", 5.30mm Width)

24-SSOP

IR2235

Infineon Technologies

IC DRIVER 3-PHASE BRIDGE 28-DIP

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 1200V
Rise / Fall Time (Typ): 90ns, 40ns
Operating Temperature: 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-DIP

패키지: 28-DIP (0.600", 15.24mm)

재고15,840

3-Phase

6

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2V

250mA, 500mA

Inverting

1200V

90ns, 40ns

125°C (TJ)

Through Hole

28-DIP (0.600", 15.24mm)

28-DIP

NCP3420MNR2G

ON Semiconductor

IC MOSFET DRIVER DUAL 12V 8-DFN

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.6 V ~ 13.2 V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): -
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 35V
Rise / Fall Time (Typ): 16ns, 11ns
Operating Temperature: 0°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VFDFN Exposed Pad
Supplier Device Package: 8-DFN (3x3)

패키지: 8-VFDFN Exposed Pad

재고5,664

Synchronous

2

N-Channel MOSFET

4.6 V ~ 13.2 V

0.8V, 2V

-

Non-Inverting

35V

16ns, 11ns

0°C ~ 150°C (TJ)

Surface Mount

8-VFDFN Exposed Pad

8-DFN (3x3)

ISL6210CRZ-T

Intersil

IC MOSFET DRIVER DUAL SYNC 16QFN

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 4
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 5.5 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36V
Rise / Fall Time (Typ): 8ns, 8ns
Operating Temperature: -10°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-VQFN Exposed Pad
Supplier Device Package: 16-QFN (4x4)

패키지: 16-VQFN Exposed Pad

재고99,960

Synchronous

4

N-Channel MOSFET

4.5 V ~ 5.5 V

-

2A, 2A

Non-Inverting

36V

8ns, 8ns

-10°C ~ 125°C (TJ)

Surface Mount

16-VQFN Exposed Pad

16-QFN (4x4)

IXDN414SI

IXYS

IC DRIVER MOSF/IGBT 14A14SOIC

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 35 V
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 14A, 14A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 22ns, 20ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

패키지: 14-SOIC (0.154", 3.90mm Width)

재고2,176

Single

1

IGBT, N-Channel, P-Channel MOSFET

4.5 V ~ 35 V

0.8V, 3.5V

14A, 14A

Non-Inverting

-

22ns, 20ns

-55°C ~ 150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SOIC

ISL6613BECB-T

Intersil

IC MOSFET DRVR SYNC BUCK 8EPSOIC

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 7 V ~ 13.2 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 1.25A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36V
Rise / Fall Time (Typ): 26ns, 18ns
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고4,784

Synchronous

2

N-Channel MOSFET

7 V ~ 13.2 V

-

1.25A, 2A

Non-Inverting

36V

26ns, 18ns

0°C ~ 125°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

HIP2100IB

Intersil

IC DRIVER HALF-BRIDGE 8-SOIC

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 9 V ~ 14 V
Logic Voltage - VIL, VIH: 4V, 7V
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 114V
Rise / Fall Time (Typ): 10ns, 10ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고713,604

Independent

2

N-Channel MOSFET

9 V ~ 14 V

4V, 7V

2A, 2A

Non-Inverting

114V

10ns, 10ns

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

NCV33152DR2

ON Semiconductor

IC DRIVER MOSFET DUAL HS 8SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 6.1 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2.6V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 36ns, 32ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고7,344

Independent

2

N-Channel MOSFET

6.1 V ~ 18 V

0.8V, 2.6V

1.5A, 1.5A

Non-Inverting

-

36ns, 32ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IRS2118SPBF

Infineon Technologies

IC DRIVER MOSFET/IGBT 1CH 8-SOIC

Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 75ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,816

Single

1

IGBT, N-Channel MOSFET

10 V ~ 20 V

6V, 9.5V

290mA, 600mA

Inverting

600V

75ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

TC4426EUA

Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8MSOP

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 19ns, 19ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고2,416

Independent

2

N-Channel, P-Channel MOSFET

4.5 V ~ 18 V

0.8V, 2.4V

1.5A, 1.5A

Inverting

-

19ns, 19ns

-40°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

2SP0115T2B0-06

Power Integrations

IC DUAL GATE DRIVER

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT
Voltage - Supply: 14.5 V ~ 15.5 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 8A, 15A
Input Type: -
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 5ns, 10ns
Operating Temperature: -20°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,088

Independent

2

IGBT

14.5 V ~ 15.5 V

-

8A, 15A

-

600V

5ns, 10ns

-20°C ~ 85°C (TA)

-

IR21363JPBF

Infineon Technologies

IC DRIVER 3-PHASE 44-PLCC

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 12 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 125ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead), 32 Leads
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)

패키지: 44-LCC (J-Lead), 32 Leads

재고5,280

3-Phase

6

IGBT, N-Channel MOSFET

12 V ~ 20 V

0.8V, 3V

200mA, 350mA

Inverting

600V

125ns, 50ns

-40°C ~ 150°C (TJ)

Surface Mount

44-LCC (J-Lead), 32 Leads

44-PLCC, 32 Leads (16.58x16.58)

TC4431COA

Microchip Technology

IC MOSFET DRIVER 30V 1.5A 8-SOIC

Driven Configuration: High-Side or Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 30 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 25ns, 33ns
Operating Temperature: 0°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고512,592

Single

1

N-Channel, P-Channel MOSFET

4.5 V ~ 30 V

0.8V, 2.4V

1.5A, 1.5A

Inverting

-

25ns, 33ns

0°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IR2104SPBF

Infineon Technologies

IC DRIVER HIGH/LOW SIDE 8SOIC

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 100ns, 50ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고57,576

Synchronous

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 3V

210mA, 360mA

Non-Inverting

600V

100ns, 50ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MCP14A0051T-E/MAY

Microchip Technology

IC MOSFET DVR 0.5A SINGLE 2X2 QF

Driven Configuration: High-Side or Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 500mA, 500mA
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 40ns, 28ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-VDFN Exposed Pad
Supplier Device Package: 6-DFN (2x2)

패키지: 6-VDFN Exposed Pad

재고21,756

Single

1

N-Channel, P-Channel MOSFET

4.5 V ~ 18 V

0.8V, 2V

500mA, 500mA

Inverting

-

40ns, 28ns

-40°C ~ 150°C (TJ)

Surface Mount

6-VDFN Exposed Pad

6-DFN (2x2)

IR2114SSPBF

Infineon Technologies

IC DRIVER HALF-BRIDGE 24-SSOP

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT
Voltage - Supply: 11.5 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 24ns, 7ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Supplier Device Package: 24-SSOP

패키지: 24-SSOP (0.209", 5.30mm Width)

재고19,500

Independent

2

IGBT

11.5 V ~ 20 V

0.8V, 2V

2A, 3A

Non-Inverting

600V

24ns, 7ns

-40°C ~ 150°C (TJ)

Surface Mount

24-SSOP (0.209", 5.30mm Width)

24-SSOP

MAX4420CPA+

Maxim Integrated

IC DRIVER MOSFET SNGL 6A HS 8DIP

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 6A, 6A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 25ns, 25ns
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고97,740

Single

1

N-Channel, P-Channel MOSFET

4.5 V ~ 18 V

0.8V, 2.4V

6A, 6A

Non-Inverting

-

25ns, 25ns

0°C ~ 70°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

IRS2186PBF

Infineon Technologies

IC DRIVER HI/LO SIDE 600V 8-DIP

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 22ns, 18ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

패키지: 8-DIP (0.300", 7.62mm)

재고29,730

Independent

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 2.5V

4A, 4A

Non-Inverting

600V

22ns, 18ns

-40°C ~ 150°C (TJ)

Through Hole

8-DIP (0.300", 7.62mm)

8-DIP

LM5060MM/NOPB

Texas Instruments

HIGH SIDE PROTECTION CONTROL

Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Voltage - Supply: 5.5 V ~ 65 V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 24µA, 2.2mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 10-VSSOP

패키지: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

재고3,712

Single

1

N-Channel MOSFET

5.5 V ~ 65 V

0.8V, 2V

24µA, 2.2mA

Non-Inverting

-

-40°C ~ 125°C

Surface Mount

10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

10-VSSOP

2SB315B-CM1200DC-34N

Power Integrations

MOD GATE DVR CM1200DC-34N

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,400

-

ISL6613BIR

Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 10-DFN

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 7 V ~ 13.2 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 1.25A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36V
Rise / Fall Time (Typ): 26ns, 18ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Supplier Device Package: 10-DFN (3x3)

패키지: 10-VFDFN Exposed Pad

재고6,304

Synchronous

2

N-Channel MOSFET

7 V ~ 13.2 V

-

1.25A, 2A

Non-Inverting

36V

26ns, 18ns

-40°C ~ 125°C (TJ)

Surface Mount

10-VFDFN Exposed Pad

10-DFN (3x3)

ISL6612IBZ

Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8-SOIC

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10.8 V ~ 13.2 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 1.25A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36V
Rise / Fall Time (Typ): 26ns, 18ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고148,140

Synchronous

2

N-Channel MOSFET

10.8 V ~ 13.2 V

-

1.25A, 2A

Non-Inverting

36V

26ns, 18ns

-40°C ~ 125°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IGD515EI-34

Power Integrations

GATE DRIVER CORE SCALE-1 3300V

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,680

-

MCP14A1201T-E/MNY

Microchip Technology

12.0A SINGLE INV MOSFET DRIVER

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 12A, 12A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 25ns, 25ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

패키지: 8-WFDFN Exposed Pad

재고5,424

Single

1

IGBT, N-Channel, P-Channel MOSFET

4.5V ~ 18V

0.8V, 2V

12A, 12A

Inverting

-

25ns, 25ns

-40°C ~ 125°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

MCP14A1201-E/SN

Microchip Technology

12.0A SINGLE INV MOSFET DRIVER

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 12A, 12A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 25ns, 25ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,828

Single

1

IGBT, N-Channel, P-Channel MOSFET

4.5V ~ 18V

0.8V, 2V

12A, 12A

Inverting

-

25ns, 25ns

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

LT8672IDDB#TRPBF

Linear Technology

ACTIVE RECTIFIER CNTR W/ REVERSE

Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Voltage - Supply: 3V ~ 42V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-WFDFN Exposed Pad
Supplier Device Package: 10-DFN (3x2)

패키지: 10-WFDFN Exposed Pad

재고4,800

Single

1

N-Channel MOSFET

3V ~ 42V

-

Non-Inverting

-

-40°C ~ 125°C (TJ)

Surface Mount

10-WFDFN Exposed Pad

10-DFN (3x2)

HIP2210FRTZ

Renesas Electronics Corporation

100V/4A PWM INPUT HALF BRIDGE DR

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 6V ~ 18V
Logic Voltage - VIL, VIH: 1.47V, 1.84V
Current - Peak Output (Source, Sink): 3A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 115 V
Rise / Fall Time (Typ): 20ns, 20ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-WDFN Exposed Pad
Supplier Device Package: 10-TDFN (4x4)

패키지: -

재고2,469

Synchronous

2

N-Channel MOSFET

6V ~ 18V

1.47V, 1.84V

3A, 4A

Non-Inverting

115 V

20ns, 20ns

-40°C ~ 125°C (TJ)

Surface Mount

10-WDFN Exposed Pad

10-TDFN (4x4)

RT9611AGQW

Richtek USA Inc.

IC BUCK MOSFET DRVR WDFN-8E

Driven Configuration: High-Side or Low-Side
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V ~ 13.5V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 15 V
Rise / Fall Time (Typ): 12ns, 12ns
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-WDFN-EL (3x3)

패키지: -

재고4,470

Synchronous

2

N-Channel MOSFET

4.5V ~ 13.5V

-

Non-Inverting

15 V

12ns, 12ns

-40°C ~ 85°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-WDFN-EL (3x3)