페이지 273 - PMIC - 게이트 구동기 | 집적 회로(IC)

부품 번호	제조업체	설명	패키지	재고	Channel Type	Number of Drivers	Gate Type	Voltage - Supply	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)	Input Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRS21858SPBF	Infineon Technologies	IC DVR LOW SIDE/DUAL HI 16-SOIC Driven Configuration: High-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 3.5V Current - Peak Output (Source, Sink): 290mA, 600mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 60ns, 20ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	패키지: 16-SOIC (0.154", 3.90mm Width)	재고47,520	Independent	2	IGBT, N-Channel MOSFET	10 V ~ 20 V	0.8V, 3.5V	290mA, 600mA	Non-Inverting	600V	60ns, 20ns	-55°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
VLA552-01R	Powerex Inc.	IC IGBT GATE DVR ISO 5A Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT Voltage - Supply: 14.2 V ~ 15.8 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 600ns, 300ns Operating Temperature: -25°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 30-SIP Module, 21 Leads Supplier Device Package: Module	패키지: 30-SIP Module, 21 Leads	재고3,632	Single	1	IGBT	14.2 V ~ 15.8 V	-	-	Inverting, Non-Inverting	-	600ns, 300ns	-25°C ~ 70°C (TA)	Through Hole	30-SIP Module, 21 Leads	Module
IX2C11P1	IXYS	IC DRVR HALF BRIDGE GATE 8DIP Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고6,656	-	-	-	-	-	-	-	-	-	-	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
ISL6613BIBZ	Intersil	IC MOSFET DRVR SYNC BUCK 8-SOIC Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 7 V ~ 13.2 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 1.25A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 36V Rise / Fall Time (Typ): 26ns, 18ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,176	Synchronous	2	N-Channel MOSFET	7 V ~ 13.2 V	-	1.25A, 2A	Non-Inverting	36V	26ns, 18ns	-40°C ~ 125°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MIC4429BM-TR	Microchip Technology	IC DRIVER MOSFET 6A LS 8-SOIC Driven Configuration: Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 6A, 6A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 12ns, 13ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고4,320	Single	1	N-Channel, P-Channel MOSFET	4.5 V ~ 18 V	0.8V, 2.4V	6A, 6A	Inverting	-	12ns, 13ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
1EDI2001ASXUMA2	Infineon Technologies	IC IGBT DVR 1200V DSO36 Driven Configuration: High-Side or Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT Voltage - Supply: 13 V ~ 18 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 1A, 1A Input Type: - High Side Voltage - Max (Bootstrap): 1200V Rise / Fall Time (Typ): 30ns, 60ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 36-BSSOP (0.295", 7.50mm Width) Supplier Device Package: PG-DSO-36	패키지: 36-BSSOP (0.295", 7.50mm Width)	재고2,768	Single	1	IGBT	13 V ~ 18 V	-	1A, 1A	-	1200V	30ns, 60ns	-40°C ~ 150°C (TJ)	Surface Mount	36-BSSOP (0.295", 7.50mm Width)	PG-DSO-36
MIC4468ZN	Microchip Technology	IC DRIVER MOSF QUAD 1.2A 14-DIP Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 4 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.2A, 1.2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 14ns, 13ns Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 14-DIP (0.300", 7.62mm) Supplier Device Package: 14-DIP	패키지: 14-DIP (0.300", 7.62mm)	재고5,072	Independent	4	N-Channel, P-Channel MOSFET	4.5 V ~ 18 V	0.8V, 2.4V	1.2A, 1.2A	Non-Inverting	-	14ns, 13ns	0°C ~ 70°C (TA)	Through Hole	14-DIP (0.300", 7.62mm)	14-DIP
LTC7003HMSE#TRPBF	Linear Technology	IC GATE DRVR N-CH MOSFET 16 MSOP Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel MOSFET Voltage - Supply: 3.5 V ~ 15 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 90ns, 40ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-TFSOP (0.118", 3.00mm Width) Exposed Pad Supplier Device Package: 16-MSOP	패키지: 16-TFSOP (0.118", 3.00mm Width) Exposed Pad	재고5,840	Single	1	N-Channel MOSFET	3.5 V ~ 15 V	-	-	Non-Inverting	-	90ns, 40ns	-40°C ~ 150°C (TJ)	Surface Mount	16-TFSOP (0.118", 3.00mm Width) Exposed Pad	16-MSOP
TC4627CPA	Microchip Technology	IC CMOS DRVR W/BOOST 1.5A 8-DIP Driven Configuration: High-Side or Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4 V ~ 6 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 1.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 33ns, 27ns Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고4,992	Single	1	N-Channel, P-Channel MOSFET	4 V ~ 6 V	0.8V, 2.4V	1.5A, 1.5A	Non-Inverting	-	33ns, 27ns	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
LTC1157CN8#PBF	Linear Technology	IC MOSFET DRIVER 3.3V DUAL 8-DIP Driven Configuration: High-Side or Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 3.3 V ~ 5 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	패키지: 8-DIP (0.300", 7.62mm)	재고5,200	Independent	2	N-Channel MOSFET	3.3 V ~ 5 V	-	-	Non-Inverting	-	-	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
MP6528GR-Z	Monolithic Power Systems Inc.	5V TO 60V, H-BRIDGE GATE DRIVER Driven Configuration: - Channel Type: - Number of Drivers: - Gate Type: - Voltage - Supply: - Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,104	-	-	-	-	-	-	-	-	-	-	-	-	-
TC4426AVOA	Microchip Technology	IC MOSFET DVR 1.5A DUAL HS 8SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5 V ~ 18 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 1.5A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 25ns, 25ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고483,996	Independent	2	N-Channel, P-Channel MOSFET	4.5 V ~ 18 V	0.8V, 2.4V	1.5A, 1.5A	Inverting	-	25ns, 25ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IX4340NETR	IXYS Integrated Circuits Division	5-AMP DUAL LOW-SIDE MOSFET DRIVE Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 5 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 5A, 5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 7ns, 7ns Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고4,896	Independent	2	N-Channel, P-Channel MOSFET	5 V ~ 20 V	0.8V, 2.5V	5A, 5A	Non-Inverting	-	7ns, 7ns	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC
MAX8702ETP+	Maxim Integrated	IC DRVR MOSFET DUAL 20-TQFN Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 4 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 28 V Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 1.5A, 1.5A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 16ns, 14ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 20-WFQFN Exposed Pad Supplier Device Package: 20-TQFN (4x4)	패키지: 20-WFQFN Exposed Pad	재고16,572	Synchronous	4	N-Channel MOSFET	4.5 V ~ 28 V	0.8V, 2.4V	1.5A, 1.5A	Non-Inverting	-	16ns, 14ns	-40°C ~ 150°C (TJ)	Surface Mount	20-WFQFN Exposed Pad	20-TQFN (4x4)
L6391D	STMicroelectronics	IC DRIVER HV HI/LOW SIDE 14SO Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 12.5 V ~ 20 V Logic Voltage - VIL, VIH: 1.1V, 1.9V Current - Peak Output (Source, Sink): 290mA, 430mA Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 75ns, 35ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SO	패키지: 14-SOIC (0.154", 3.90mm Width)	재고292,608	Independent	2	IGBT, N-Channel MOSFET	12.5 V ~ 20 V	1.1V, 1.9V	290mA, 430mA	Non-Inverting	600V	75ns, 35ns	-40°C ~ 150°C (TJ)	Surface Mount	14-SOIC (0.154", 3.90mm Width)	14-SO
2EDN7424RXUMA1	Infineon Technologies	IC GATE DRIVER 8TSSOP Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.3V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 6.4ns, 5.4ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: PG-TSSOP-8	패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	재고4,240	Independent	2	N-Channel MOSFET	4.5 V ~ 20 V	0.8V, 2.3V	4A, 4A	Non-Inverting	-	6.4ns, 5.4ns	-40°C ~ 150°C (TJ)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	PG-TSSOP-8
TD351IDT	STMicroelectronics	IC DRIVER GATE IGBT/MOSFET 8SOIC Driven Configuration: High-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 12 V ~ 26 V Logic Voltage - VIL, VIH: 0.8V, 4.2V Current - Peak Output (Source, Sink): 1.3A, 1.7A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 100ns, 100ns (Max) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고2,832	Single	1	IGBT, N-Channel MOSFET	12 V ~ 26 V	0.8V, 4.2V	1.3A, 1.7A	Non-Inverting	-	100ns, 100ns (Max)	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
ISL89161FBEBZ-T	Renesas Electronics America	IC MOSFET DRIVER 2CH 6A 8SOIC Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 16 V Logic Voltage - VIL, VIH: 1.85V, 3.15V Current - Peak Output (Source, Sink): 6A, 6A Input Type: Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 20ns, 20ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고5,120	Independent	2	N-Channel MOSFET	4.5 V ~ 16 V	1.85V, 3.15V	6A, 6A	Inverting	-	20ns, 20ns	-40°C ~ 125°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
ISL6613ECB	Renesas Electronics America	IC MOSFET DRVR SYNC BUCK 8EPSOIC Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 10.8 V ~ 13.2 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 1.25A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 36V Rise / Fall Time (Typ): 26ns, 18ns Operating Temperature: 0°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Supplier Device Package: 8-SOIC-EP	패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad	재고16,668	Synchronous	2	N-Channel MOSFET	10.8 V ~ 13.2 V	-	1.25A, 2A	Non-Inverting	36V	26ns, 18ns	0°C ~ 125°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
ISL6608IRZ	Renesas Electronics America	IC MOSFET DRVR SYNC BUCK 8-QFN Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5 V ~ 5.5 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 22V Rise / Fall Time (Typ): 8ns, 8ns Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-VQFN Exposed Pad Supplier Device Package: 8-QFN (3x3)	패키지: 8-VQFN Exposed Pad	재고2,192	Synchronous	2	N-Channel MOSFET	4.5 V ~ 5.5 V	-	2A, 2A	Non-Inverting	22V	8ns, 8ns	-40°C ~ 125°C (TJ)	Surface Mount	8-VQFN Exposed Pad	8-QFN (3x3)
DGD0227S8-13	Diodes Incorporated	IC GATE DRVR LOW-SIDE 8SO 2.5K Driven Configuration: Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 4.5V ~ 18V Logic Voltage - VIL, VIH: 0.7V, 2.4V Current - Peak Output (Source, Sink): 4A, 4A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 20ns, 20ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	패키지: 8-SOIC (0.154", 3.90mm Width)	재고6,192	Independent	2	IGBT, N-Channel MOSFET	4.5V ~ 18V	0.7V, 2.4V	4A, 4A	Non-Inverting	-	20ns, 20ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
MCP14A0902T-E/SN	Microchip Technology	9.0A SINGLE NON-INV MOSFET DRIVE Driven Configuration: High-Side or Low-Side Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel, P-Channel MOSFET Voltage - Supply: 4.5V ~ 18V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 9A, 9A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 22ns, 22ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	패키지: 8-SOIC (0.154", 3.90mm Width)	재고5,552	Synchronous	2	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2V	9A, 9A	Non-Inverting	-	22ns, 22ns	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
DRV8300DRGER	Texas Instruments	100-V MAX SIMPLE 3-PHASE GATE DR Driven Configuration: High-Side and Low-Side Channel Type: 3-Phase Number of Drivers: 3 Gate Type: N-Channel MOSFET Voltage - Supply: 5V ~ 20V Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 750mA, 1.5A Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 105 V Rise / Fall Time (Typ): 12ns, 12ns Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-VFQFN Exposed Pad Supplier Device Package: 24-VQFN (4x4)	패키지: -	재고62,922	3-Phase	3	N-Channel MOSFET	5V ~ 20V	0.8V, 2V	750mA, 1.5A	Inverting, Non-Inverting	105 V	12ns, 12ns	-40°C ~ 125°C (TA)	Surface Mount	24-VFQFN Exposed Pad	24-VQFN (4x4)
2SP0325V2A1-CM1800DY-34S	Power Integrations	MODULE GATE DVR P&P FIBER OPTIC Driven Configuration: Half-Bridge Channel Type: Independent Number of Drivers: 2 Gate Type: IGBT Voltage - Supply: 14.5V ~ 15.5V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 25A, - Input Type: - High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): 600ns, 750ns Operating Temperature: -40°C ~ 85°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Independent	2	IGBT	14.5V ~ 15.5V	-	25A, -	-	-	600ns, 750ns	-40°C ~ 85°C	Chassis Mount	Module	Module
MP6539BGV-Z	Monolithic Power Systems Inc.	100V, THREE-PHASE BLDC MOTOR PRE Driven Configuration: Half-Bridge Channel Type: 3-Phase Number of Drivers: 6 Gate Type: N-Channel MOSFET Voltage - Supply: 8.5V ~ 14V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 800mA, 1A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): - Rise / Fall Time (Typ): - Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 28-VFQFN Exposed Pad Supplier Device Package: 28-QFN (4x5)	패키지: -	Request a Quote	3-Phase	6	N-Channel MOSFET	8.5V ~ 14V	-	800mA, 1A	Non-Inverting	-	-	-40°C ~ 125°C (TJ)	Surface Mount	28-VFQFN Exposed Pad	28-QFN (4x5)
1SP0335V2M1C-5SNA0600G650100	Power Integrations	IGBT GATE DRIVER P/P 1CH SCALE-2 Driven Configuration: High-Side or Low-Side Channel Type: Single Number of Drivers: 1 Gate Type: IGBT Voltage - Supply: 23.5V ~ 26.5V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 35A, 35A Input Type: - High Side Voltage - Max (Bootstrap): 6500 V Rise / Fall Time (Typ): 9ns, 30ns Operating Temperature: -40°C ~ 85°C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	패키지: -	Request a Quote	Single	1	IGBT	23.5V ~ 26.5V	-	35A, 35A	-	6500 V	9ns, 30ns	-40°C ~ 85°C	Chassis Mount	Module	Module
ISL95808WR5999	Renesas Electronics Corporation	ISL95808WR5999 Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5V ~ 5.5V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 2A, 2A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 36 V Rise / Fall Time (Typ): 8ns, 8ns Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	Synchronous	2	N-Channel MOSFET	4.5V ~ 5.5V	-	2A, 2A	Non-Inverting	36 V	8ns, 8ns	-	-	-	-
FBS-GAM02P-R-PSE	EPC Space, LLC	GAN DUAL HI/LO SIDE DRIVER 18SMT Driven Configuration: High-Side and Low-Side Channel Type: Independent Number of Drivers: 2 Gate Type: N-Channel MOSFET Voltage - Supply: 4.5V ~ 5.5V, 5V ~ 50V Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): - Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 100 V Rise / Fall Time (Typ): 35ns, 22ns Operating Temperature: -55°C ~ 130°C (TJ) Mounting Type: Surface Mount Package / Case: 18-SMD Module Supplier Device Package: -	패키지: -	재고123	Independent	2	N-Channel MOSFET	4.5V ~ 5.5V, 5V ~ 50V	0.8V, 2.9V	-	Non-Inverting	100 V	35ns, 22ns	-55°C ~ 130°C (TJ)	Surface Mount	18-SMD Module	-

IRS21858SPBF

Infineon Technologies

IC DVR LOW SIDE/DUAL HI 16-SOIC

Driven Configuration: High-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 3.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 60ns, 20ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

패키지: 16-SOIC (0.154", 3.90mm Width)

재고47,520

Independent

2

IGBT, N-Channel MOSFET

10 V ~ 20 V

0.8V, 3.5V

290mA, 600mA

Non-Inverting

600V

60ns, 20ns

-55°C ~ 150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

VLA552-01R

Powerex Inc.

IC IGBT GATE DVR ISO 5A

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT
Voltage - Supply: 14.2 V ~ 15.8 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 600ns, 300ns
Operating Temperature: -25°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 30-SIP Module, 21 Leads
Supplier Device Package: Module

패키지: 30-SIP Module, 21 Leads

재고3,632

Single

1

IGBT

14.2 V ~ 15.8 V

-

Inverting, Non-Inverting

-

600ns, 300ns

-25°C ~ 70°C (TA)

Through Hole

30-SIP Module, 21 Leads

Module

IX2C11P1

IXYS

IC DRVR HALF BRIDGE GATE 8DIP

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고6,656

-

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

ISL6613BIBZ

Intersil

IC MOSFET DRVR SYNC BUCK 8-SOIC

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 7 V ~ 13.2 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 1.25A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36V
Rise / Fall Time (Typ): 26ns, 18ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,176

Synchronous

2

N-Channel MOSFET

7 V ~ 13.2 V

-

1.25A, 2A

Non-Inverting

36V

26ns, 18ns

-40°C ~ 125°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MIC4429BM-TR

Microchip Technology

IC DRIVER MOSFET 6A LS 8-SOIC

Driven Configuration: Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 6A, 6A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 12ns, 13ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고4,320

Single

1

N-Channel, P-Channel MOSFET

4.5 V ~ 18 V

0.8V, 2.4V

6A, 6A

Inverting

-

12ns, 13ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

1EDI2001ASXUMA2

Infineon Technologies

IC IGBT DVR 1200V DSO36

Driven Configuration: High-Side or Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT
Voltage - Supply: 13 V ~ 18 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 1A, 1A
Input Type: -
High Side Voltage - Max (Bootstrap): 1200V
Rise / Fall Time (Typ): 30ns, 60ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Supplier Device Package: PG-DSO-36

패키지: 36-BSSOP (0.295", 7.50mm Width)

재고2,768

Single

1

IGBT

13 V ~ 18 V

-

1A, 1A

-

1200V

30ns, 60ns

-40°C ~ 150°C (TJ)

Surface Mount

36-BSSOP (0.295", 7.50mm Width)

PG-DSO-36

MIC4468ZN

Microchip Technology

IC DRIVER MOSF QUAD 1.2A 14-DIP

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 4
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.2A, 1.2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 14ns, 13ns
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: 14-DIP

패키지: 14-DIP (0.300", 7.62mm)

재고5,072

Independent

4

N-Channel, P-Channel MOSFET

4.5 V ~ 18 V

0.8V, 2.4V

1.2A, 1.2A

Non-Inverting

-

14ns, 13ns

0°C ~ 70°C (TA)

Through Hole

14-DIP (0.300", 7.62mm)

14-DIP

LTC7003HMSE#TRPBF

Linear Technology

IC GATE DRVR N-CH MOSFET 16 MSOP

Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel MOSFET
Voltage - Supply: 3.5 V ~ 15 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 90ns, 40ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-TFSOP (0.118", 3.00mm Width) Exposed Pad
Supplier Device Package: 16-MSOP

패키지: 16-TFSOP (0.118", 3.00mm Width) Exposed Pad

재고5,840

Single

1

N-Channel MOSFET

3.5 V ~ 15 V

-

Non-Inverting

-

90ns, 40ns

-40°C ~ 150°C (TJ)

Surface Mount

16-TFSOP (0.118", 3.00mm Width) Exposed Pad

16-MSOP

TC4627CPA

Microchip Technology

IC CMOS DRVR W/BOOST 1.5A 8-DIP

Driven Configuration: High-Side or Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4 V ~ 6 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 33ns, 27ns
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고4,992

Single

1

N-Channel, P-Channel MOSFET

4 V ~ 6 V

0.8V, 2.4V

1.5A, 1.5A

Non-Inverting

-

33ns, 27ns

0°C ~ 70°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

LTC1157CN8#PBF

Linear Technology

IC MOSFET DRIVER 3.3V DUAL 8-DIP

Driven Configuration: High-Side or Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 3.3 V ~ 5 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

패키지: 8-DIP (0.300", 7.62mm)

재고5,200

Independent

2

N-Channel MOSFET

3.3 V ~ 5 V

-

Non-Inverting

-

0°C ~ 70°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

MP6528GR-Z

Monolithic Power Systems Inc.

5V TO 60V, H-BRIDGE GATE DRIVER

Driven Configuration: -
Channel Type: -
Number of Drivers: -
Gate Type: -
Voltage - Supply: -
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,104

-

TC4426AVOA

Microchip Technology

IC MOSFET DVR 1.5A DUAL HS 8SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5 V ~ 18 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 25ns, 25ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고483,996

Independent

2

N-Channel, P-Channel MOSFET

4.5 V ~ 18 V

0.8V, 2.4V

1.5A, 1.5A

Inverting

-

25ns, 25ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IX4340NETR

IXYS Integrated Circuits Division

5-AMP DUAL LOW-SIDE MOSFET DRIVE

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 5 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 5A, 5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 7ns, 7ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고4,896

Independent

2

N-Channel, P-Channel MOSFET

5 V ~ 20 V

0.8V, 2.5V

5A, 5A

Non-Inverting

-

7ns, 7ns

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC

MAX8702ETP+

Maxim Integrated

IC DRVR MOSFET DUAL 20-TQFN

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 4
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 28 V
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 1.5A, 1.5A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 16ns, 14ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-WFQFN Exposed Pad
Supplier Device Package: 20-TQFN (4x4)

패키지: 20-WFQFN Exposed Pad

재고16,572

Synchronous

4

N-Channel MOSFET

4.5 V ~ 28 V

0.8V, 2.4V

1.5A, 1.5A

Non-Inverting

-

16ns, 14ns

-40°C ~ 150°C (TJ)

Surface Mount

20-WFQFN Exposed Pad

20-TQFN (4x4)

L6391D

STMicroelectronics

IC DRIVER HV HI/LOW SIDE 14SO

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 12.5 V ~ 20 V
Logic Voltage - VIL, VIH: 1.1V, 1.9V
Current - Peak Output (Source, Sink): 290mA, 430mA
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 75ns, 35ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SO

패키지: 14-SOIC (0.154", 3.90mm Width)

재고292,608

Independent

2

IGBT, N-Channel MOSFET

12.5 V ~ 20 V

1.1V, 1.9V

290mA, 430mA

Non-Inverting

600V

75ns, 35ns

-40°C ~ 150°C (TJ)

Surface Mount

14-SOIC (0.154", 3.90mm Width)

14-SO

2EDN7424RXUMA1

Infineon Technologies

IC GATE DRIVER 8TSSOP

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 6.4ns, 5.4ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: PG-TSSOP-8

패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

재고4,240

Independent

2

N-Channel MOSFET

4.5 V ~ 20 V

0.8V, 2.3V

4A, 4A

Non-Inverting

-

6.4ns, 5.4ns

-40°C ~ 150°C (TJ)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

PG-TSSOP-8

TD351IDT

STMicroelectronics

IC DRIVER GATE IGBT/MOSFET 8SOIC

Driven Configuration: High-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 12 V ~ 26 V
Logic Voltage - VIL, VIH: 0.8V, 4.2V
Current - Peak Output (Source, Sink): 1.3A, 1.7A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 100ns, 100ns (Max)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고2,832

Single

1

IGBT, N-Channel MOSFET

12 V ~ 26 V

0.8V, 4.2V

1.3A, 1.7A

Non-Inverting

-

100ns, 100ns (Max)

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

ISL89161FBEBZ-T

Renesas Electronics America

IC MOSFET DRIVER 2CH 6A 8SOIC

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 16 V
Logic Voltage - VIL, VIH: 1.85V, 3.15V
Current - Peak Output (Source, Sink): 6A, 6A
Input Type: Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 20ns, 20ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고5,120

Independent

2

N-Channel MOSFET

4.5 V ~ 16 V

1.85V, 3.15V

6A, 6A

Inverting

-

20ns, 20ns

-40°C ~ 125°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

ISL6613ECB

Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8EPSOIC

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 10.8 V ~ 13.2 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 1.25A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36V
Rise / Fall Time (Typ): 26ns, 18ns
Operating Temperature: 0°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package: 8-SOIC-EP

패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad

재고16,668

Synchronous

2

N-Channel MOSFET

10.8 V ~ 13.2 V

-

1.25A, 2A

Non-Inverting

36V

26ns, 18ns

0°C ~ 125°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width) Exposed Pad

8-SOIC-EP

ISL6608IRZ

Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8-QFN

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 5.5 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 22V
Rise / Fall Time (Typ): 8ns, 8ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VQFN Exposed Pad
Supplier Device Package: 8-QFN (3x3)

패키지: 8-VQFN Exposed Pad

재고2,192

Synchronous

2

N-Channel MOSFET

4.5 V ~ 5.5 V

-

2A, 2A

Non-Inverting

22V

8ns, 8ns

-40°C ~ 125°C (TJ)

Surface Mount

8-VQFN Exposed Pad

8-QFN (3x3)

DGD0227S8-13

Diodes Incorporated

IC GATE DRVR LOW-SIDE 8SO 2.5K

Driven Configuration: Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 4.5V ~ 18V
Logic Voltage - VIL, VIH: 0.7V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 20ns, 20ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

패키지: 8-SOIC (0.154", 3.90mm Width)

재고6,192

Independent

2

IGBT, N-Channel MOSFET

4.5V ~ 18V

0.7V, 2.4V

4A, 4A

Non-Inverting

-

20ns, 20ns

-40°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

MCP14A0902T-E/SN

Microchip Technology

9.0A SINGLE NON-INV MOSFET DRIVE

Driven Configuration: High-Side or Low-Side
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel, P-Channel MOSFET
Voltage - Supply: 4.5V ~ 18V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 9A, 9A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 22ns, 22ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

패키지: 8-SOIC (0.154", 3.90mm Width)

재고5,552

Synchronous

2

N-Channel, P-Channel MOSFET

4.5V ~ 18V

0.8V, 2V

9A, 9A

Non-Inverting

-

22ns, 22ns

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

DRV8300DRGER

Texas Instruments

100-V MAX SIMPLE 3-PHASE GATE DR

Driven Configuration: High-Side and Low-Side
Channel Type: 3-Phase
Number of Drivers: 3
Gate Type: N-Channel MOSFET
Voltage - Supply: 5V ~ 20V
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 750mA, 1.5A
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 105 V
Rise / Fall Time (Typ): 12ns, 12ns
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VFQFN Exposed Pad
Supplier Device Package: 24-VQFN (4x4)

패키지: -

재고62,922

3-Phase

3

N-Channel MOSFET

5V ~ 20V

0.8V, 2V

750mA, 1.5A

Inverting, Non-Inverting

105 V

12ns, 12ns

-40°C ~ 125°C (TA)

Surface Mount

24-VFQFN Exposed Pad

24-VQFN (4x4)

2SP0325V2A1-CM1800DY-34S

Power Integrations

MODULE GATE DVR P&P FIBER OPTIC

Driven Configuration: Half-Bridge
Channel Type: Independent
Number of Drivers: 2
Gate Type: IGBT
Voltage - Supply: 14.5V ~ 15.5V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 25A, -
Input Type: -
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): 600ns, 750ns
Operating Temperature: -40°C ~ 85°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

패키지: -

Request a Quote

Independent

2

IGBT

14.5V ~ 15.5V

-

25A, -

-

600ns, 750ns

-40°C ~ 85°C

Chassis Mount

Module

MP6539BGV-Z

Monolithic Power Systems Inc.

100V, THREE-PHASE BLDC MOTOR PRE

Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Number of Drivers: 6
Gate Type: N-Channel MOSFET
Voltage - Supply: 8.5V ~ 14V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 800mA, 1A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): -
Rise / Fall Time (Typ): -
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-VFQFN Exposed Pad
Supplier Device Package: 28-QFN (4x5)

패키지: -

Request a Quote

3-Phase

6

N-Channel MOSFET

8.5V ~ 14V

-

800mA, 1A

Non-Inverting

-

-40°C ~ 125°C (TJ)

Surface Mount

28-VFQFN Exposed Pad

28-QFN (4x5)

1SP0335V2M1C-5SNA0600G650100

Power Integrations

IGBT GATE DRIVER P/P 1CH SCALE-2

Driven Configuration: High-Side or Low-Side
Channel Type: Single
Number of Drivers: 1
Gate Type: IGBT
Voltage - Supply: 23.5V ~ 26.5V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 35A, 35A
Input Type: -
High Side Voltage - Max (Bootstrap): 6500 V
Rise / Fall Time (Typ): 9ns, 30ns
Operating Temperature: -40°C ~ 85°C
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module

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Single

1

IGBT

23.5V ~ 26.5V

-

35A, 35A

-

6500 V

9ns, 30ns

-40°C ~ 85°C

Chassis Mount

Module

ISL95808WR5999

Renesas Electronics Corporation

ISL95808WR5999

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V ~ 5.5V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 2A, 2A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 36 V
Rise / Fall Time (Typ): 8ns, 8ns
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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Synchronous

2

N-Channel MOSFET

4.5V ~ 5.5V

-

2A, 2A

Non-Inverting

36 V

8ns, 8ns

-

FBS-GAM02P-R-PSE

EPC Space, LLC

GAN DUAL HI/LO SIDE DRIVER 18SMT

Driven Configuration: High-Side and Low-Side
Channel Type: Independent
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5V ~ 5.5V, 5V ~ 50V
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): -
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 100 V
Rise / Fall Time (Typ): 35ns, 22ns
Operating Temperature: -55°C ~ 130°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-SMD Module
Supplier Device Package: -

패키지: -

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Independent

2

N-Channel MOSFET

4.5V ~ 5.5V, 5V ~ 50V

0.8V, 2.9V

-

Non-Inverting

100 V

35ns, 22ns

-55°C ~ 130°C (TJ)

Surface Mount

18-SMD Module

-