페이지 41 - PMIC - 게이트 구동기 | 집적 회로(IC) | Heisener Electronics
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PMIC - 게이트 구동기

기록 7,713
페이지  41/276
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRS2001MPBF
Infineon Technologies

IC DRIVER HIGH/LOW SIDE 16MLPQ

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 200V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VFQFN Exposed Pad
  • Supplier Device Package: 16-MLPQ (4x4)
패키지: 16-VFQFN Exposed Pad
재고7,856
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
200V
70ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
16-VFQFN Exposed Pad
16-MLPQ (4x4)
hot IR21362
Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 28-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 11.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 200mA, 350mA
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 28-DIP (0.600", 15.24mm)
  • Supplier Device Package: 28-DIP
패키지: 28-DIP (0.600", 15.24mm)
재고32,340
3-Phase
6
IGBT, N-Channel MOSFET
11.5 V ~ 20 V
0.8V, 3V
200mA, 350mA
Inverting, Non-Inverting
600V
125ns, 50ns
-40°C ~ 150°C (TJ)
Through Hole
28-DIP (0.600", 15.24mm)
28-DIP
hot NCP3418BDR2G
ON Semiconductor

IC MOSFET DRIVER DUAL 12V 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.6 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 30V
  • Rise / Fall Time (Typ): 16ns, 11ns
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고71,520
Synchronous
2
N-Channel MOSFET
4.6 V ~ 13.2 V
0.8V, 2V
-
Non-Inverting
30V
16ns, 11ns
0°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
ISL6613IB
Intersil

IC MOSFET DRVR SYNC BUCK 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,184
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
UC3715DG4
Texas Instruments

IC COMPLEMENT SW FET DRVR 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 7 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 500mA, 1A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 30ns, 25ns
  • Operating Temperature: 0°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,560
Synchronous
2
N-Channel, P-Channel MOSFET
7 V ~ 20 V
0.8V, 2V
500mA, 1A
Non-Inverting
-
30ns, 25ns
0°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
TPS2811PWG4
Texas Instruments

IC DUAL HS MOSFET DRVR 8-TSSOP

  • Driven Configuration: Low-Side
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 1V, 4V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 14ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
패키지: 8-TSSOP (0.173", 4.40mm Width)
재고5,904
Synchronous
2
N-Channel, P-Channel MOSFET
4 V ~ 14 V
1V, 4V
2A, 2A
Inverting
-
14ns, 15ns
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
TC1411NVOA
Microchip Technology

IC MOSFET DVR 1A HS N-INV 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 16 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,136
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 16 V
0.8V, 2V
1A, 1A
Non-Inverting
-
25ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX17602AUA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8UMAX

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-uMax-EP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
재고3,664
Independent
2
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2.1V
4A, 4A
Inverting, Non-Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-uMax-EP
MIC4126YML-TR
Microchip Technology

IC DRIVER MOSFET 1.5A DUAL 8-MLF

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VFDFN Exposed Pad, 8-MLF?
  • Supplier Device Package: 8-MLF? (2x2)
패키지: 8-VFDFN Exposed Pad, 8-MLF?
재고2,656
Independent
2
N-Channel MOSFET
4.5 V ~ 20 V
0.8V, 2.4V
1.5A, 1.5A
Inverting
-
20ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
8-VFDFN Exposed Pad, 8-MLF?
8-MLF? (2x2)
hot 2SP0320T2B0-12
Power Integrations

IC DUAL GATE DRIVER 20A

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT
  • Voltage - Supply: 14.5 V ~ 15.5 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 20A, 20A
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): 1200V
  • Rise / Fall Time (Typ): 7ns, 25ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고15,588
Independent
2
IGBT
14.5 V ~ 15.5 V
-
20A, 20A
-
1200V
7ns, 25ns
-40°C ~ 85°C (TA)
-
-
-
IRS2304PBF
Infineon Technologies

IC DRIVER HALF-BRIDGE 600V 8-DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.7V, 2.3V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
패키지: 8-DIP (0.300", 7.62mm)
재고6,588
Independent
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.7V, 2.3V
290mA, 600mA
Non-Inverting
600V
70ns, 35ns
-40°C ~ 150°C (TJ)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
DRV8305NEPHPRQ1
Texas Instruments

IC GATE DRIVER 3-PHASE

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.4 V ~ 45 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 1A, 1A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TQFP Exposed Pad
  • Supplier Device Package: 48-HTQFP (7x7)
패키지: 48-TQFP Exposed Pad
재고6,240
3-Phase
6
N-Channel MOSFET
4.4 V ~ 45 V
0.8V, 2V
1A, 1A
Non-Inverting
-
-
-40°C ~ 175°C (TJ)
Surface Mount
48-TQFP Exposed Pad
48-HTQFP (7x7)
SM74104MAX/NOPB
Texas Instruments

IC GATE DRIVER 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 9 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 1.6A, 1.6A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 118V
  • Rise / Fall Time (Typ): 600ns, 600ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,528
Synchronous
2
N-Channel MOSFET
9 V ~ 14 V
0.8V, 2V
1.6A, 1.6A
Non-Inverting
118V
600ns, 600ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DGD0504FN-7
Diodes Incorporated

IC GATE DVR HV 10-WDFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): 290mA, 600mA
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 100V
  • Rise / Fall Time (Typ): 70ns, 35ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: W-DFN3030-10
패키지: 10-WFDFN Exposed Pad
재고3,216
Synchronous
2
IGBT, N-Channel MOSFET
10 V ~ 20 V
0.8V, 2.5V
290mA, 600mA
Non-Inverting
100V
70ns, 35ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
W-DFN3030-10
hot MC33151DR2G
ON Semiconductor

IC MOSFET DRIVER DUAL HS 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 6.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.6V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 31ns, 32ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고928,476
Independent
2
N-Channel MOSFET
6.5 V ~ 18 V
0.8V, 2.6V
1.5A, 1.5A
Inverting
-
31ns, 32ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot LM5113TME/NOPB
Texas Instruments

IC GATE DRVR HALF BRDG 5A 12SMD

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: 1.76V, 1.89V
  • Current - Peak Output (Source, Sink): 1.2A, 5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 107V
  • Rise / Fall Time (Typ): 7ns, 1.5ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 12-WFBGA, DSBGA
  • Supplier Device Package: 12-DSBGA
패키지: 12-WFBGA, DSBGA
재고5,136
Independent
2
N-Channel MOSFET
4.5 V ~ 5.5 V
1.76V, 1.89V
1.2A, 5A
Non-Inverting
107V
7ns, 1.5ns
-40°C ~ 125°C (TJ)
Surface Mount
12-WFBGA, DSBGA
12-DSBGA
UCC21222QDQ1
Texas Instruments

AUTOMOTIVE 4-A, 6-A, 3.0-KV(RMS)

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 3 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: 1.25V, 1.6V
  • Current - Peak Output (Source, Sink): 4A, 6A
  • Input Type: CMOS/TTL
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 5ns, 6ns
  • Operating Temperature: -40°C ~ 150°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
패키지: 16-SOIC (0.154", 3.90mm Width)
재고7,020
Independent
2
IGBT, N-Channel MOSFET
3 V ~ 5.5 V
1.25V, 1.6V
4A, 6A
CMOS/TTL
-
5ns, 6ns
-40°C ~ 150°C (TA)
Surface Mount
16-SOIC (0.154", 3.90mm Width)
16-SOIC
FAN3229TMPX
ON Semiconductor

IC GATE DVR LOW DUAL 2A HS 8MLP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 12ns, 9ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-MLP (3x3)
패키지: 8-WDFN Exposed Pad
재고4,704
Independent
2
N-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2V
3A, 3A
Inverting, Non-Inverting
-
12ns, 9ns
-40°C ~ 125°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-MLP (3x3)
ISL6614CRZA-TR5214
Renesas Electronics America

IC DRVR DUAL SYNC BUCK 16-QFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VQFN Exposed Pad
  • Supplier Device Package: 16-QFN (4x4)
패키지: 16-VQFN Exposed Pad
재고4,096
Synchronous
4
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
0°C ~ 125°C (TJ)
Surface Mount
16-VQFN Exposed Pad
16-QFN (4x4)
ISL6614CRZAR5214
Renesas Electronics America

IC DRVR DUAL SYNC BUCK 16-QFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 4
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: 0°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 16-VQFN Exposed Pad
  • Supplier Device Package: 16-QFN (4x4)
패키지: 16-VQFN Exposed Pad
재고7,744
Synchronous
4
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
0°C ~ 125°C (TJ)
Surface Mount
16-VQFN Exposed Pad
16-QFN (4x4)
ISL6613AIBZ-T
Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고2,592
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
ISL6612BIR
Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 10-DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad
  • Supplier Device Package: 10-DFN (3x3)
패키지: 10-VFDFN Exposed Pad
재고5,424
Synchronous
2
N-Channel MOSFET
7 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VFDFN Exposed Pad
10-DFN (3x3)
ISL6612AIR
Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 10-DFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad
  • Supplier Device Package: 10-DFN (3x3)
패키지: 10-VFDFN Exposed Pad
재고5,040
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VFDFN Exposed Pad
10-DFN (3x3)
ISL6612AEIBZ-T
Renesas Electronics America

IC MOSFET DRVR SYNC BUCK 8EPSOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 10.8 V ~ 13.2 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 1.25A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 36V
  • Rise / Fall Time (Typ): 26ns, 18ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고7,520
Synchronous
2
N-Channel MOSFET
10.8 V ~ 13.2 V
-
1.25A, 2A
Non-Inverting
36V
26ns, 18ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
EL7156CS
Renesas Electronics America

IC DVR PIN 40MHZ 3STATE 8-SOIC

  • Driven Configuration: High-Side or Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT
  • Voltage - Supply: 4.5 V ~ 16.5 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 3.5A, 3.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 14.5ns, 15ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,600
Single
1
IGBT
4.5 V ~ 16.5 V
0.8V, 2.4V
3.5A, 3.5A
Non-Inverting
-
14.5ns, 15ns
-40°C ~ 125°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
2ED2778S01GXTMA1
Infineon Technologies

2ED2778S01GXTMA1

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 7V ~ 18V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 4A, 8A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 140 V
  • Rise / Fall Time (Typ): 24ns, 12ns
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VFDFN Exposed Pad
  • Supplier Device Package: PG-VSON-10-5
패키지: -
Request a Quote
Independent
2
N-Channel MOSFET
7V ~ 18V
0.8V, 2V
4A, 8A
Non-Inverting
140 V
24ns, 12ns
-40°C ~ 125°C (TA)
Surface Mount
10-VFDFN Exposed Pad
PG-VSON-10-5
MP1923GRE-Z
Monolithic Power Systems Inc.

100V, 8A, HIGH FREQUENCY HALF-BR

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 5V ~ 17V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 7A, 8A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 120 V
  • Rise / Fall Time (Typ): 7.2ns, 5.5ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-VDFN Exposed Pad
  • Supplier Device Package: 10-QFN (4x4)
패키지: -
재고14,220
Independent
2
N-Channel MOSFET
5V ~ 17V
-
7A, 8A
Non-Inverting
120 V
7.2ns, 5.5ns
-40°C ~ 125°C (TJ)
Surface Mount
10-VDFN Exposed Pad
10-QFN (4x4)
FAN3122TM1X-F085
onsemi

IC GATE DRVR DUAL 4A HI/LO SPEED

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5V ~ 18V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 10.6A, 11.4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 23ns, 19ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: -
재고3,255
Single
1
N-Channel MOSFET
4.5V ~ 18V
-
10.6A, 11.4A
Non-Inverting
-
23ns, 19ns
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP