페이지 5 - Maxim Integrated 제품 - PMIC - 게이트 구동기 | Heisener Electronics
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Maxim Integrated 제품 - PMIC - 게이트 구동기

기록 306
페이지  5/11
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Channel Type
Number of Drivers
Gate Type
Voltage - Supply
Logic Voltage - VIL, VIH
Current - Peak Output (Source, Sink)
Input Type
High Side Voltage - Max (Bootstrap)
Rise / Fall Time (Typ)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot MAX8552ETB+T
Maxim Integrated

IC DRIVER MOSFET HS 10-TDFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 6.5 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 14ns, 9ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-WFDFN Exposed Pad
  • Supplier Device Package: 10-TDFN-EP (3x3)
패키지: 10-WFDFN Exposed Pad
재고90,000
Synchronous
2
N-Channel MOSFET
4.5 V ~ 6.5 V
0.8V, 2.5V
-
Non-Inverting
-
14ns, 9ns
-40°C ~ 150°C (TJ)
Surface Mount
10-WFDFN Exposed Pad
10-TDFN-EP (3x3)
hot MAX8552EUB+T
Maxim Integrated

IC DRIVER MOSFET HS 10-UMAX

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 6.5 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.5V
  • Current - Peak Output (Source, Sink): -
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 14ns, 9ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 10-uMAX
패키지: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
재고37,536
Synchronous
2
N-Channel MOSFET
4.5 V ~ 6.5 V
0.8V, 2.5V
-
Non-Inverting
-
14ns, 9ns
-40°C ~ 150°C (TJ)
Surface Mount
10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
10-uMAX
MAX8791BGTA+T
Maxim Integrated

IC MOSF DRIVER 1PH SYNCH 8TQFN

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.2 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2.2A, 2.7A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 8ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WQFN Exposed Pad
  • Supplier Device Package: 8-TQFN-EP
패키지: 8-WQFN Exposed Pad
재고3,040
Synchronous
2
N-Channel MOSFET
4.2 V ~ 5.5 V
-
2.2A, 2.7A
Non-Inverting
-
10ns, 8ns
-40°C ~ 150°C (TJ)
Surface Mount
8-WQFN Exposed Pad
8-TQFN-EP
hot MAX15054AUT+T
Maxim Integrated

IC MOSFET DVR HIGH SIDE SOT-23-6

  • Driven Configuration: High-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.6 V ~ 5.5 V
  • Logic Voltage - VIL, VIH: 1.8V, 3.9V
  • Current - Peak Output (Source, Sink): 2.5A, 2.5A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 65V
  • Rise / Fall Time (Typ): 18ns, 16ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
패키지: SOT-23-6
재고418,536
Single
1
N-Channel MOSFET
4.6 V ~ 5.5 V
1.8V, 3.9V
2.5A, 2.5A
Non-Inverting
65V
18ns, 16ns
-40°C ~ 150°C (TJ)
Surface Mount
SOT-23-6
SOT-23-6
MAX17602ATA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-TDFN (3x3)
패키지: 8-WDFN Exposed Pad
재고5,344
Independent
2
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2.1V
4A, 4A
Inverting, Non-Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-WDFN Exposed Pad
8-TDFN (3x3)
MAX17605ASA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, SiC MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고5,728
Independent
2
IGBT, SiC MOSFET
4 V ~ 14 V
2V, 4.25V
4A, 4A
Inverting, Non-Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX17604ASA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고6,896
Independent
2
N-Channel MOSFET
4 V ~ 14 V
2V, 4.25V
4A, 4A
Non-Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX17603ASA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,328
Independent
2
N-Channel MOSFET
4 V ~ 14 V
2V, 4.25V
4A, 4A
Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX17602ASA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,296
Independent
2
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2.1V
4A, 4A
Inverting, Non-Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MAX17601ASA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,480
Independent
2
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2.1V
4A, 4A
Non-Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX17600ASA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고3,952
Independent
2
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2.1V
4A, 4A
Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX17605AUA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8UMAX

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: IGBT, SiC MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-uMax-EP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
재고7,056
Independent
2
IGBT, SiC MOSFET
4 V ~ 14 V
2V, 4.25V
4A, 4A
Inverting, Non-Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-uMax-EP
MAX17604AUA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8UMAX

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-uMax-EP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
재고2,928
Independent
2
N-Channel MOSFET
4 V ~ 14 V
2V, 4.25V
4A, 4A
Non-Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-uMax-EP
MAX17603AUA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8UMAX

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-uMax-EP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
재고6,064
Independent
2
N-Channel MOSFET
4 V ~ 14 V
2V, 4.25V
4A, 4A
Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-uMax-EP
MAX17602AUA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8UMAX

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-uMax-EP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
재고3,664
Independent
2
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2.1V
4A, 4A
Inverting, Non-Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-uMax-EP
MAX17601AUA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8UMAX

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-uMax-EP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
재고4,864
Independent
2
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2.1V
4A, 4A
Non-Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-uMax-EP
MAX17600AUA+T
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8UMAX

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.1V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-uMax-EP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
재고6,384
Independent
2
N-Channel MOSFET
4 V ~ 14 V
0.8V, 2.1V
4A, 4A
Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-uMax-EP
MAX4429MJA/883B
Maxim Integrated

IC MOSFET DRVR COTS

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-CDIP (0.300", 7.62mm)
  • Supplier Device Package: 8-CERDIP
패키지: 8-CDIP (0.300", 7.62mm)
재고6,544
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
6A, 6A
Inverting
-
25ns, 25ns
-55°C ~ 125°C (TA)
Through Hole
8-CDIP (0.300", 7.62mm)
8-CERDIP
MAX15012BASA+
Maxim Integrated

IC DRIVER MOSFET 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 175V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고4,176
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
2A, 2A
Inverting, Non-Inverting
175V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5063CASA+
Maxim Integrated

IC MOSFET DRIVER 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 65ns, 65ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고5,248
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
0.8V, 2V
2A, 2A
Non-Inverting
125V
65ns, 65ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot MAX4429ESA+
Maxim Integrated

IC MOSFET DRV SGL 6A HS 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고10,152
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
6A, 6A
Inverting
-
25ns, 25ns
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX15018BASA+
Maxim Integrated

IC MOSF DRVR HALF BRDG HS 8-SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 8 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): 125V
  • Rise / Fall Time (Typ): 50ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: 8-SOIC-EP
패키지: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
재고7,136
Independent
2
N-Channel MOSFET
8 V ~ 12.6 V
-
3A, 3A
Inverting, Non-Inverting
125V
50ns, 40ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
8-SOIC-EP
hot MAX4429CPA+
Maxim Integrated

IC DRIVER MOSFET SNGL 6A HS 8DIP

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 6A, 6A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 25ns
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고27,000
Single
1
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
6A, 6A
Inverting
-
25ns, 25ns
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
hot MAX4426CPA+
Maxim Integrated

IC MOSFET DRVR DUAL INV 8-DIP

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.5A, 1.5A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 20ns
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-PDIP
패키지: 8-DIP (0.300", 7.62mm)
재고98,400
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2.4V
1.5A, 1.5A
Inverting
-
20ns, 20ns
0°C ~ 70°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-PDIP
MAX17603ASA+
Maxim Integrated

IC MOSFET DRVR 4A DUAL 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 14 V
  • Logic Voltage - VIL, VIH: 2V, 4.25V
  • Current - Peak Output (Source, Sink): 4A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 40ns, 25ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고7,600
Independent
2
N-Channel MOSFET
4 V ~ 14 V
2V, 4.25V
4A, 4A
Inverting
-
40ns, 25ns
-40°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
hot MAX627ESA+
Maxim Integrated

IC DRIVER MOSFET DUAL 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Independent
  • Number of Drivers: 2
  • Gate Type: N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 18 V
  • Logic Voltage - VIL, VIH: 0.8V, 2V
  • Current - Peak Output (Source, Sink): 2A, 2A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 20ns
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
패키지: 8-SOIC (0.154", 3.90mm Width)
재고9,456
Independent
2
N-Channel, P-Channel MOSFET
4.5 V ~ 18 V
0.8V, 2V
2A, 2A
Non-Inverting
-
25ns, 20ns
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MAX5075AAUA+
Maxim Integrated

IC DRVR FET P-P 8-UMAX

  • Driven Configuration: Low-Side
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 15 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 3A, 3A
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 10ns, 10ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
  • Supplier Device Package: 8-uMax-EP
패키지: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
재고2,016
Synchronous
2
N-Channel MOSFET
4.5 V ~ 15 V
-
3A, 3A
RC Input Circuit
-
10ns, 10ns
-40°C ~ 150°C (TJ)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Exposed Pad
8-uMax-EP
hot MAX5048BATT+T
Maxim Integrated

IC MOSFET DRIVER 6-TDFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 4 V ~ 12.6 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 1.3A, 7.6A
  • Input Type: Inverting, Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 82ns, 12.5ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-WDFN Exposed Pad
  • Supplier Device Package: 6-TDFN-EP (3x3)
패키지: 6-WDFN Exposed Pad
재고4,736
Single
1
N-Channel MOSFET
4 V ~ 12.6 V
0.8V, 2.4V
1.3A, 7.6A
Inverting, Non-Inverting
-
82ns, 12.5ns
-40°C ~ 150°C (TJ)
Surface Mount
6-WDFN Exposed Pad
6-TDFN-EP (3x3)