페이지 104 - Micron Technology Inc. 제품 - 메모리 | Heisener Electronics
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Micron Technology Inc. 제품 - 메모리

기록 10,993
페이지  104/393
이미지
부품 번호
제조업체
설명
패키지
재고
수량
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT41DC11TW-V88A TR
Micron Technology Inc.

IC SDRAM DDR3 1G NANA NA

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,840
-
-
-
-
-
-
-
-
-
-
-
-
MT40A512M8RH-083E AUT:B TR
Micron Technology Inc.

IC DRAM 4G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 125°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,312
DRAM
SDRAM - DDR4
4Gb (512M x 8)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 125°C (TC)
-
-
-
MT40A512M8RH-083E AIT:B TR
Micron Technology Inc.

IC DRAM 4G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,704
DRAM
SDRAM - DDR4
4Gb (512M x 8)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 95°C (TC)
-
-
-
MT40A512M8RH-083E AAT:B TR
Micron Technology Inc.

IC DRAM 4G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,336
DRAM
SDRAM - DDR4
4Gb (512M x 8)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 105°C (TC)
-
-
-
MT40A512M16LY-075:E TR
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (512M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,864
DRAM
SDRAM - DDR4
8Gb (512M x 16)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A512M16LY-062E:E TR
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.6GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (512M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.6GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고6,720
DRAM
SDRAM - DDR4
8Gb (512M x 16)
Parallel
1.6GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A512M16JY-062E:B TR
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.6GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (512M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.6GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,328
DRAM
SDRAM - DDR4
8Gb (512M x 16)
Parallel
1.6GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A512M16JY-062E IT:B TR
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.6GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (512M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.6GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,584
DRAM
SDRAM - DDR4
8Gb (512M x 16)
Parallel
1.6GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 95°C (TC)
-
-
-
MT40A4G8KVA-083H:G TR
Micron Technology Inc.

IC DRAM 32G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,248
DRAM
SDRAM - DDR4
32Gb (4G x 8)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A4G4FSE-083E:A TR
Micron Technology Inc.

IC DRAM 16G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 16Gb (4G x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,344
DRAM
SDRAM - DDR4
16Gb (4G x 4)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A2G8FSE-083E:A TR
Micron Technology Inc.

IC DRAM 16G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,976
DRAM
SDRAM - DDR4
16Gb (2G x 8)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A2G4WE-075E:D TR
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (2G x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,264
DRAM
SDRAM - DDR4
8Gb (2G x 4)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A2G4SA-075:E TR
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (2G x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,192
DRAM
SDRAM - DDR4
8Gb (2G x 4)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A2G4SA-062E:E TR
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.6GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (2G x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 1.6GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,472
DRAM
SDRAM - DDR4
8Gb (2G x 4)
Parallel
1.6GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A256M16GE-083E AIT:B TR
Micron Technology Inc.

IC DRAM 4G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 4Gb (256M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,400
DRAM
SDRAM - DDR4
4Gb (256M x 16)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
-40°C ~ 95°C (TC)
-
-
-
MT40A1G8WE-075E:D TR
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,016
DRAM
SDRAM - DDR4
8Gb (1G x 8)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A1G8SA-075:E TR
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,296
DRAM
SDRAM - DDR4
8Gb (1G x 8)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A1G8SA-062E:E TR
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.6GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.6GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,416
DRAM
SDRAM - DDR4
8Gb (1G x 8)
Parallel
1.6GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A1G8PM-083E:A TR
Micron Technology Inc.

IC DRAM 8G PARALLEL 1.2GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 8Gb (1G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 1.2GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,224
DRAM
SDRAM - DDR4
8Gb (1G x 8)
Parallel
1.2GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT40A1G16WBU-075E:B TR
Micron Technology Inc.

IC DRAM 16G PARALLEL 1.33GHZ

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR4
  • Memory Size: 16Gb (1G x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 1.33GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.14 V ~ 1.26 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,152
DRAM
SDRAM - DDR4
16Gb (1G x 16)
Parallel
1.33GHz
-
-
1.14 V ~ 1.26 V
0°C ~ 95°C (TC)
-
-
-
MT29VZZZBD8HQOWL-053 W.G8D TR
Micron Technology Inc.

ALL IN ONE MCP 5600G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,912
-
-
-
-
-
-
-
-
-
-
-
-
MT29VZZZBD8DQOPR-053 W.9G8 TR
Micron Technology Inc.

ALL IN ONE MCP 5600G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,960
-
-
-
-
-
-
-
-
-
-
-
-
MT29VZZZBC9FQOPR-053 W.G9G TR
Micron Technology Inc.

ALL IN ONE MCP 1072G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고4,000
-
-
-
-
-
-
-
-
-
-
-
-
MT29VZZZAD8HQKPR-053 W.G8C TR
Micron Technology Inc.

ALL IN ONE MCP 4352G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,216
-
-
-
-
-
-
-
-
-
-
-
-
MT29VZZZAD8DQKSM-053 W.9D8 TR
Micron Technology Inc.

ALL IN ONE MCP 4352G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고5,920
-
-
-
-
-
-
-
-
-
-
-
-
MT29VZZZAC8FQKSL-053 W.G8F TR
Micron Technology Inc.

ALL IN ONE MCP 3264G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,240
-
-
-
-
-
-
-
-
-
-
-
-
MT29VZZZ7D7HQKWL-062 W.G7A TR
Micron Technology Inc.

ALL IN ONE MCP 280G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고2,416
-
-
-
-
-
-
-
-
-
-
-
-
MT29VZZZ7D7DQKWL-062 W.97Y TR
Micron Technology Inc.

MLC EMMC/LPDDR3 280G

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
패키지: -
재고3,600
-
-
-
-
-
-
-
-
-
-
-
-