페이지 111 - Micron Technology Inc. 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT41K256M16LY-093:N	Micron Technology Inc.	IC DRAM 4G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	패키지: 96-TFBGA	재고7,280	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	1067MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
MT41K128M16JT-125 V:K	Micron Technology Inc.	IC DRAM 2G PARALLEL 800MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 13.75ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	패키지: 96-TFBGA	재고7,888	DRAM	SDRAM - DDR3L	2Gb (128M x 16)	Parallel	800MHz	-	13.75ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)
EDF8164A3PK-JD-F-R	Micron Technology Inc.	IC DRAM 8G PARALLEL 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,592	DRAM	SDRAM - Mobile LPDDR3	8Gb (128M x 64)	Parallel	933MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 85°C (TC)	-	-	-
EDB8164B4PT-1DAT-F-R	Micron Technology Inc.	IC DRAM 8G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,808	DRAM	SDRAM - Mobile LPDDR2	8Gb (128M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	-	-	-
EDB4416BBBH-1DIT-F-R	Micron Technology Inc.	IC DRAM 4G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,176	DRAM	SDRAM - Mobile LPDDR2	4Gb (256M x 16)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	-	-	-
EDB5432BEPA-1DIT-F-R	Micron Technology Inc.	IC DRAM 512M PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,152	DRAM	SDRAM - Mobile LPDDR2	512Mb (16M x 32)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	-	-	-
ECF840AAACN-C2-Y3	Micron Technology Inc.	IC DRAM 8G PARALLEL Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,496	DRAM	SDRAM - Mobile LPDDR3	8Gb (512M x 16)	Parallel	-	-	-	1.14 V ~ 1.95 V	-	-	-	-
MT41K512M8V00HWC1-N002	Micron Technology Inc.	IC DRAM 4G PARALLEL Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,912	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	Parallel	-	-	-	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT41K256M16V90BWC1	Micron Technology Inc.	IC DRAM 4G PARALLEL DIE Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,848	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	-	-	-	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT48LC16M16A2Y66AWC1	Micron Technology Inc.	IC DRAM 256M PARALLEL 133MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 14ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,840	DRAM	SDRAM	256Mb (16M x 16)	Parallel	133MHz	14ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT41K256M8V89CWC1	Micron Technology Inc.	IC DRAM 2G PARALLEL DIE Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,672	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	Parallel	-	-	-	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MT46H16M32LFT67M-N1003	Micron Technology Inc.	IC SDRAM MOBILE DDR 512M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,944	-	-	-	-	-	-	-	-	-	-	-	-
MT41K64M16V88AWC1	Micron Technology Inc.	IC DRAM 1G PARALLEL 800MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 13.75ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,096	DRAM	SDRAM - DDR3L	1Gb (64M x 16)	Parallel	800MHz	-	13.75ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	-	-	-
MTA9ASF1G72HZ-2G6E1	Micron Technology Inc.	IC SDRAM DDR4 8GB SODIMM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,104	-	-	-	-	-	-	-	-	-	-	-	-
MTA8ATF51264HZ-2G6B1	Micron Technology Inc.	IC DRAM 32G PARALLEL 1333MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 32Gb (512M x 64) Memory Interface: Parallel Clock Frequency: 1333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,672	DRAM	SDRAM - DDR4	32Gb (512M x 64)	Parallel	1333MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-
MTA8ATF51264HZ-2G1B1	Micron Technology Inc.	IC DRAM 32G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 32Gb (512M x 64) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,248	DRAM	SDRAM - DDR4	32Gb (512M x 64)	Parallel	1067MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-
MTA8ATF51264AZ-2G6B1	Micron Technology Inc.	IC DRAM 32G PARALLEL 1333MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 32Gb (512M x 64) Memory Interface: Parallel Clock Frequency: 1333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,888	DRAM	SDRAM - DDR4	32Gb (512M x 64)	Parallel	1333MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-
MTA8ATF51264AZ-2G1B1	Micron Technology Inc.	IC DRAM 32G PARALLEL 1067MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 32Gb (512M x 64) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,416	DRAM	SDRAM - DDR4	32Gb (512M x 64)	Parallel	1067MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-
MTA8ATF1G64HZ-2G3A1	Micron Technology Inc.	IC DRAM 64G PARALLEL 1200MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 64Gb (1G x 64) Memory Interface: Parallel Clock Frequency: 1200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,120	DRAM	SDRAM - DDR4	64Gb (1G x 64)	Parallel	1200MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-
MTA8ATF1G64AZ-2G3A1	Micron Technology Inc.	IC DRAM 64G PARALLEL 1200MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 64Gb (1G x 64) Memory Interface: Parallel Clock Frequency: 1200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,176	DRAM	SDRAM - DDR4	64Gb (1G x 64)	Parallel	1200MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-
MTA4ATF25664HZ-2G6B1	Micron Technology Inc.	IC DRAM 16G PARALLEL 1333MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 16Gb (256M x 64) Memory Interface: Parallel Clock Frequency: 1333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,376	DRAM	SDRAM - DDR4	16Gb (256M x 64)	Parallel	1333MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-
MTA4ATF25664AZ-2G6B1	Micron Technology Inc.	IC DRAM 16G PARALLEL 1333MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 16Gb (256M x 64) Memory Interface: Parallel Clock Frequency: 1333MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,232	DRAM	SDRAM - DDR4	16Gb (256M x 64)	Parallel	1333MHz	-	-	1.2V	0°C ~ 95°C (TC)	-	-	-
MT49H16M18CTR-25:B	Micron Technology Inc.	IC DRAM 288M PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 288Mb (16M x 18) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,408	DRAM	DRAM	288Mb (16M x 18)	Parallel	400MHz	-	20ns	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	-	-	-
MT47H128M8CF-25E:M	Micron Technology Inc.	IC DRAM 1G PARALLEL 400MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,792	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	-	-	-
EDW4032BABG-80-F-D	Micron Technology Inc.	IC RAM 4G PARALLEL 2GHZ Memory Type: Volatile Memory Format: RAM Technology: SGRAM - GDDR5 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.31 V ~ 1.65 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,896	RAM	SGRAM - GDDR5	4Gb (128M x 32)	Parallel	2GHz	-	-	1.31 V ~ 1.65 V	0°C ~ 95°C (TC)	-	-	-
EDW4032BABG-50-F-D	Micron Technology Inc.	IC RAM 4G PARALLEL 1.25GHZ Memory Type: Volatile Memory Format: RAM Technology: SGRAM - GDDR5 Memory Size: 4Gb (128M x 32) Memory Interface: Parallel Clock Frequency: 1.25GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.31 V ~ 1.65 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,896	RAM	SGRAM - GDDR5	4Gb (128M x 32)	Parallel	1.25GHz	-	-	1.31 V ~ 1.65 V	0°C ~ 95°C (TC)	-	-	-
EDFA364A3PD-JDTJ-F-R	Micron Technology Inc.	IC DRAM 16G PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 16Gb (256M x 64) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -30°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,736	DRAM	SDRAM - Mobile LPDDR3	16Gb (256M x 64)	Parallel	933MHz	-	-	1.14 V ~ 1.95 V	-30°C ~ 105°C (TC)	-	-	-
MT41K64M16TW-125:J	Micron Technology Inc.	IC DRAM 1G PARALLEL 800MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 13.75ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (8x14)	패키지: 96-TFBGA	재고7,152	DRAM	SDRAM - DDR3L	1Gb (64M x 16)	Parallel	800MHz	-	13.75ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (8x14)

MT41K256M16LY-093:N

Micron Technology Inc.

IC DRAM 4G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

패키지: 96-TFBGA

재고7,280

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

1067MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

MT41K128M16JT-125 V:K

Micron Technology Inc.

IC DRAM 2G PARALLEL 800MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 13.75ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

패키지: 96-TFBGA

재고7,888

DRAM

SDRAM - DDR3L

2Gb (128M x 16)

Parallel

800MHz

-

13.75ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)

EDF8164A3PK-JD-F-R

Micron Technology Inc.

IC DRAM 8G PARALLEL 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,592

DRAM

SDRAM - Mobile LPDDR3

8Gb (128M x 64)

Parallel

933MHz

-

1.14 V ~ 1.95 V

-30°C ~ 85°C (TC)

-

EDB8164B4PT-1DAT-F-R

Micron Technology Inc.

IC DRAM 8G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,808

DRAM

SDRAM - Mobile LPDDR2

8Gb (128M x 64)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

-

EDB4416BBBH-1DIT-F-R

Micron Technology Inc.

IC DRAM 4G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,176

DRAM

SDRAM - Mobile LPDDR2

4Gb (256M x 16)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

-

EDB5432BEPA-1DIT-F-R

Micron Technology Inc.

IC DRAM 512M PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,152

DRAM

SDRAM - Mobile LPDDR2

512Mb (16M x 32)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 85°C (TC)

-

ECF840AAACN-C2-Y3

Micron Technology Inc.

IC DRAM 8G PARALLEL

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,496

DRAM

SDRAM - Mobile LPDDR3

8Gb (512M x 16)

Parallel

-

1.14 V ~ 1.95 V

-

MT41K512M8V00HWC1-N002

Micron Technology Inc.

IC DRAM 4G PARALLEL

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,912

DRAM

SDRAM - DDR3L

4Gb (512M x 8)

Parallel

-

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

-

MT41K256M16V90BWC1

Micron Technology Inc.

IC DRAM 4G PARALLEL DIE

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,848

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

-

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

-

MT48LC16M16A2Y66AWC1

Micron Technology Inc.

IC DRAM 256M PARALLEL 133MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 14ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,840

DRAM

SDRAM

256Mb (16M x 16)

Parallel

133MHz

14ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT41K256M8V89CWC1

Micron Technology Inc.

IC DRAM 2G PARALLEL DIE

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,672

DRAM

SDRAM - DDR3L

2Gb (256M x 8)

Parallel

-

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

-

MT46H16M32LFT67M-N1003

Micron Technology Inc.

IC SDRAM MOBILE DDR 512M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,944

-

MT41K64M16V88AWC1

Micron Technology Inc.

IC DRAM 1G PARALLEL 800MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 13.75ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,096

DRAM

SDRAM - DDR3L

1Gb (64M x 16)

Parallel

800MHz

-

13.75ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

-

MTA9ASF1G72HZ-2G6E1

Micron Technology Inc.

IC SDRAM DDR4 8GB SODIMM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,104

-

MTA8ATF51264HZ-2G6B1

Micron Technology Inc.

IC DRAM 32G PARALLEL 1333MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: Parallel
Clock Frequency: 1333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,672

DRAM

SDRAM - DDR4

32Gb (512M x 64)

Parallel

1333MHz

-

1.2V

0°C ~ 95°C (TC)

-

MTA8ATF51264HZ-2G1B1

Micron Technology Inc.

IC DRAM 32G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,248

DRAM

SDRAM - DDR4

32Gb (512M x 64)

Parallel

1067MHz

-

1.2V

0°C ~ 95°C (TC)

-

MTA8ATF51264AZ-2G6B1

Micron Technology Inc.

IC DRAM 32G PARALLEL 1333MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: Parallel
Clock Frequency: 1333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,888

DRAM

SDRAM - DDR4

32Gb (512M x 64)

Parallel

1333MHz

-

1.2V

0°C ~ 95°C (TC)

-

MTA8ATF51264AZ-2G1B1

Micron Technology Inc.

IC DRAM 32G PARALLEL 1067MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 32Gb (512M x 64)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,416

DRAM

SDRAM - DDR4

32Gb (512M x 64)

Parallel

1067MHz

-

1.2V

0°C ~ 95°C (TC)

-

MTA8ATF1G64HZ-2G3A1

Micron Technology Inc.

IC DRAM 64G PARALLEL 1200MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: Parallel
Clock Frequency: 1200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,120

DRAM

SDRAM - DDR4

64Gb (1G x 64)

Parallel

1200MHz

-

1.2V

0°C ~ 95°C (TC)

-

MTA8ATF1G64AZ-2G3A1

Micron Technology Inc.

IC DRAM 64G PARALLEL 1200MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: Parallel
Clock Frequency: 1200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,176

DRAM

SDRAM - DDR4

64Gb (1G x 64)

Parallel

1200MHz

-

1.2V

0°C ~ 95°C (TC)

-

MTA4ATF25664HZ-2G6B1

Micron Technology Inc.

IC DRAM 16G PARALLEL 1333MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: Parallel
Clock Frequency: 1333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,376

DRAM

SDRAM - DDR4

16Gb (256M x 64)

Parallel

1333MHz

-

1.2V

0°C ~ 95°C (TC)

-

MTA4ATF25664AZ-2G6B1

Micron Technology Inc.

IC DRAM 16G PARALLEL 1333MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: Parallel
Clock Frequency: 1333MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,232

DRAM

SDRAM - DDR4

16Gb (256M x 64)

Parallel

1333MHz

-

1.2V

0°C ~ 95°C (TC)

-

MT49H16M18CTR-25:B

Micron Technology Inc.

IC DRAM 288M PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 288Mb (16M x 18)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,408

DRAM

288Mb (16M x 18)

Parallel

400MHz

-

20ns

1.7 V ~ 1.9 V

0°C ~ 95°C (TC)

-

MT47H128M8CF-25E:M

Micron Technology Inc.

IC DRAM 1G PARALLEL 400MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,792

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

0°C ~ 85°C (TC)

-

EDW4032BABG-80-F-D

Micron Technology Inc.

IC RAM 4G PARALLEL 2GHZ

Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR5
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.31 V ~ 1.65 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,896

RAM

SGRAM - GDDR5

4Gb (128M x 32)

Parallel

2GHz

-

1.31 V ~ 1.65 V

0°C ~ 95°C (TC)

-

EDW4032BABG-50-F-D

Micron Technology Inc.

IC RAM 4G PARALLEL 1.25GHZ

Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR5
Memory Size: 4Gb (128M x 32)
Memory Interface: Parallel
Clock Frequency: 1.25GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.31 V ~ 1.65 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,896

RAM

SGRAM - GDDR5

4Gb (128M x 32)

Parallel

1.25GHz

-

1.31 V ~ 1.65 V

0°C ~ 95°C (TC)

-

EDFA364A3PD-JDTJ-F-R

Micron Technology Inc.

IC DRAM 16G PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 16Gb (256M x 64)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -30°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,736

DRAM

SDRAM - Mobile LPDDR3

16Gb (256M x 64)

Parallel

933MHz

-

1.14 V ~ 1.95 V

-30°C ~ 105°C (TC)

-

MT41K64M16TW-125:J

Micron Technology Inc.

IC DRAM 1G PARALLEL 800MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 13.75ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (8x14)

패키지: 96-TFBGA

재고7,152

DRAM

SDRAM - DDR3L

1Gb (64M x 16)

Parallel

800MHz

-

13.75ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (8x14)