페이지 124 - Micron Technology Inc. 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT53B2G32D8QD-062 WT ES:D	Micron Technology Inc.	LPDDR4 64G 2GX32 FBGA 8DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,776	-	-	-	-	-	-	-	-	-	-	-	-
MT53B2DDNP-DC	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,208	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	-	-	-
MT53B2DANW-DC	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,560	DRAM	SDRAM - Mobile LPDDR4	-	-	-	-	-	-	-	-	-	-
MT53B256M64D2TG-062 XT ES:C	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,952	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53B256M64D2PX-062 XT ES:C	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,352	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1600MHz	-	-	1.1V	-	-	-	-
MT53B256M64D2NK-062 WT ES:C	Micron Technology Inc.	IC DRAM 16G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,544	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B256M64D2NK-053 WT ES:C	Micron Technology Inc.	IC DRAM 16G 1866MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 16Gb (256M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,856	DRAM	SDRAM - Mobile LPDDR4	16Gb (256M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B256M32D1TG-062 XT ES:C	Micron Technology Inc.	IC DRAM 8G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,096	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53B256M32D1PX-062 XT ES:C	Micron Technology Inc.	IC DRAM 8G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,448	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53B256M32D1NP-062 WT ES:C	Micron Technology Inc.	IC DRAM 8G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,616	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B256M32D1NK-062 XT ES:C	Micron Technology Inc.	IC DRAM 8G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gb (256M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,280	DRAM	SDRAM - Mobile LPDDR4	8Gb (256M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
MT53B1G64D8NW-062 WT:D	Micron Technology Inc.	LPDDR4 64G 1GX64 FBGA 8DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,504	-	-	-	-	-	-	-	-	-	-	-	-
MT53B1G64D8NW-062 WT ES:D	Micron Technology Inc.	LPDDR4 64G 1GX64 FBGA 8DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고7,792	-	-	-	-	-	-	-	-	-	-	-	-
MT53B1G32D4NQ-062 WT:D	Micron Technology Inc.	LPDDR4 32G 1GX32 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,880	-	-	-	-	-	-	-	-	-	-	-	-
MT53B1G32D4NQ-062 WT ES:D	Micron Technology Inc.	LPDDR4 32G 1GX32 FBGA QDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,904	-	-	-	-	-	-	-	-	-	-	-	-
MT53B192M64D2SG-062 WT ES:A	Micron Technology Inc.	LPDDR4 12G 192MX64 FBGA DDP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,992	-	-	-	-	-	-	-	-	-	-	-	-
MT53B192M32D1SG-062 WT ES:A	Micron Technology Inc.	IC DRAM 6G 1600MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 6Gb (192M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,136	DRAM	SDRAM - Mobile LPDDR4	6Gb (192M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B1024M64D8WF-062 WT ES:D	Micron Technology Inc.	IC DRAM 64G 1600MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gb (1G x 64) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,368	DRAM	SDRAM - Mobile LPDDR4	64Gb (1G x 64)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B1024M32D4NQ-062 WT ES:C	Micron Technology Inc.	IC DRAM 32G 1600MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고2,704	DRAM	SDRAM - Mobile LPDDR4	32Gb (1G x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT53B1024M32D4NQ-053 WT:C	Micron Technology Inc.	IC DRAM 32G 1866MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 32Gb (1G x 32) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고6,336	DRAM	SDRAM - Mobile LPDDR4	32Gb (1G x 32)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
MT52L4DBPG-DC	Micron Technology Inc.	SPECIAL/CUSTOM LPDDR3 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,176	-	-	-	-	-	-	-	-	-	-	-	-
MT52L1G64D8QC-107 WT ES:B	Micron Technology Inc.	IC DRAM 64G 933MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR3 Memory Size: 64Gb (1G x 64) Memory Interface: - Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,664	DRAM	SDRAM - Mobile LPDDR3	64Gb (1G x 64)	-	933MHz	-	-	1.2V	-30°C ~ 85°C (TC)	-	-	-
MT51J256M32HF-80:B	Micron Technology Inc.	IC RAM 8G PARALLEL 2.0GHZ FBGA Memory Type: Volatile Memory Format: RAM Technology: SGRAM - GDDR5 Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 2.0GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.3 V ~ 1.545 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고3,024	RAM	SGRAM - GDDR5	8Gb (256M x 32)	Parallel	2.0GHz	-	-	1.3 V ~ 1.545 V	0°C ~ 95°C (TC)	-	-	-
MT51J256M32HF-70:B	Micron Technology Inc.	IC RAM 8G PARALLEL 1.75GHZ Memory Type: Volatile Memory Format: RAM Technology: SGRAM - GDDR5 Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 1.75GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.3 V ~ 1.545 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고5,280	RAM	SGRAM - GDDR5	8Gb (256M x 32)	Parallel	1.75GHz	-	-	1.3 V ~ 1.545 V	0°C ~ 95°C (TC)	-	-	-
MT35XU512ABA2G12-0AAT	Micron Technology Inc.	SERIAL NOR SLC 64MX8 TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 512Mb (64M x 8) Memory Interface: Xccela Bus Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TPBGA	패키지: 24-TBGA	재고4,560	FLASH	FLASH	512Mb (64M x 8)	Xccela Bus	200MHz	-	-	1.7 V ~ 2 V	-40°C ~ 105°C	Surface Mount	24-TBGA	24-TPBGA
MT35XU512ABA1G12-0AAT	Micron Technology Inc.	SERIAL NOR SLC 64MX8 TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 512Mb (64M x 8) Memory Interface: Xccela Bus Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TPBGA	패키지: 24-TBGA	재고2,848	FLASH	FLASH	512Mb (64M x 8)	Xccela Bus	200MHz	-	-	1.7 V ~ 2 V	-40°C ~ 105°C	Surface Mount	24-TBGA	24-TPBGA
MT35XU256ABA2G12-0AAT	Micron Technology Inc.	SPI FLASH NOR SLC 32MX8 TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 256Mb (32M x 8) Memory Interface: Xccela Bus Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TPBGA	패키지: 24-TBGA	재고5,664	FLASH	FLASH	256Mb (32M x 8)	Xccela Bus	200MHz	-	-	1.7 V ~ 2 V	-40°C ~ 105°C	Surface Mount	24-TBGA	24-TPBGA
MT35XU256ABA1G12-0AAT	Micron Technology Inc.	SPI FLASH NOR SLC 32MX8 TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 256Mb (32M x 8) Memory Interface: Xccela Bus Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TPBGA	패키지: 24-TBGA	재고2,128	FLASH	FLASH	256Mb (32M x 8)	Xccela Bus	200MHz	-	-	1.7 V ~ 2 V	-40°C ~ 105°C	Surface Mount	24-TBGA	24-TPBGA

MT53B2G32D8QD-062 WT ES:D

Micron Technology Inc.

LPDDR4 64G 2GX32 FBGA 8DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,776

-

MT53B2DDNP-DC

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,208

DRAM

SDRAM - Mobile LPDDR4

-

MT53B2DANW-DC

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,560

DRAM

SDRAM - Mobile LPDDR4

-

MT53B256M64D2TG-062 XT ES:C

Micron Technology Inc.

IC DRAM 16G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,952

DRAM

SDRAM - Mobile LPDDR4

16Gb (256M x 64)

-

1600MHz

-

1.1V

-30°C ~ 105°C (TC)

-

MT53B256M64D2PX-062 XT ES:C

Micron Technology Inc.

IC DRAM 16G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,352

DRAM

SDRAM - Mobile LPDDR4

16Gb (256M x 64)

-

1600MHz

-

1.1V

-

MT53B256M64D2NK-062 WT ES:C

Micron Technology Inc.

IC DRAM 16G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,544

DRAM

SDRAM - Mobile LPDDR4

16Gb (256M x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B256M64D2NK-053 WT ES:C

Micron Technology Inc.

IC DRAM 16G 1866MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 16Gb (256M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,856

DRAM

SDRAM - Mobile LPDDR4

16Gb (256M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B256M32D1TG-062 XT ES:C

Micron Technology Inc.

IC DRAM 8G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,096

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1600MHz

-

1.1V

-30°C ~ 105°C (TC)

-

MT53B256M32D1PX-062 XT ES:C

Micron Technology Inc.

IC DRAM 8G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,448

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1600MHz

-

1.1V

-30°C ~ 105°C (TC)

-

MT53B256M32D1NP-062 WT ES:C

Micron Technology Inc.

IC DRAM 8G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,616

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B256M32D1NK-062 XT ES:C

Micron Technology Inc.

IC DRAM 8G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gb (256M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,280

DRAM

SDRAM - Mobile LPDDR4

8Gb (256M x 32)

-

1600MHz

-

1.1V

-30°C ~ 105°C (TC)

-

MT53B1G64D8NW-062 WT:D

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA 8DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,504

-

MT53B1G64D8NW-062 WT ES:D

Micron Technology Inc.

LPDDR4 64G 1GX64 FBGA 8DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고7,792

-

MT53B1G32D4NQ-062 WT:D

Micron Technology Inc.

LPDDR4 32G 1GX32 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,880

-

MT53B1G32D4NQ-062 WT ES:D

Micron Technology Inc.

LPDDR4 32G 1GX32 FBGA QDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,904

-

MT53B192M64D2SG-062 WT ES:A

Micron Technology Inc.

LPDDR4 12G 192MX64 FBGA DDP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,992

-

MT53B192M32D1SG-062 WT ES:A

Micron Technology Inc.

IC DRAM 6G 1600MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 6Gb (192M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,136

DRAM

SDRAM - Mobile LPDDR4

6Gb (192M x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B1024M64D8WF-062 WT ES:D

Micron Technology Inc.

IC DRAM 64G 1600MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,368

DRAM

SDRAM - Mobile LPDDR4

64Gb (1G x 64)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B1024M32D4NQ-062 WT ES:C

Micron Technology Inc.

IC DRAM 32G 1600MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (1G x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고2,704

DRAM

SDRAM - Mobile LPDDR4

32Gb (1G x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT53B1024M32D4NQ-053 WT:C

Micron Technology Inc.

IC DRAM 32G 1866MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 32Gb (1G x 32)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고6,336

DRAM

SDRAM - Mobile LPDDR4

32Gb (1G x 32)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

MT52L4DBPG-DC

Micron Technology Inc.

SPECIAL/CUSTOM LPDDR3

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,176

-

MT52L1G64D8QC-107 WT ES:B

Micron Technology Inc.

IC DRAM 64G 933MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR3
Memory Size: 64Gb (1G x 64)
Memory Interface: -
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,664

DRAM

SDRAM - Mobile LPDDR3

64Gb (1G x 64)

-

933MHz

-

1.2V

-30°C ~ 85°C (TC)

-

MT51J256M32HF-80:B

Micron Technology Inc.

IC RAM 8G PARALLEL 2.0GHZ FBGA

Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR5
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 2.0GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.3 V ~ 1.545 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고3,024

RAM

SGRAM - GDDR5

8Gb (256M x 32)

Parallel

2.0GHz

-

1.3 V ~ 1.545 V

0°C ~ 95°C (TC)

-

MT51J256M32HF-70:B

Micron Technology Inc.

IC RAM 8G PARALLEL 1.75GHZ

Memory Type: Volatile
Memory Format: RAM
Technology: SGRAM - GDDR5
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 1.75GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.3 V ~ 1.545 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고5,280

RAM

SGRAM - GDDR5

8Gb (256M x 32)

Parallel

1.75GHz

-

1.3 V ~ 1.545 V

0°C ~ 95°C (TC)

-

MT35XU512ABA2G12-0AAT

Micron Technology Inc.

SERIAL NOR SLC 64MX8 TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Mb (64M x 8)
Memory Interface: Xccela Bus
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TPBGA

패키지: 24-TBGA

재고4,560

FLASH

512Mb (64M x 8)

Xccela Bus

200MHz

-

1.7 V ~ 2 V

-40°C ~ 105°C

Surface Mount

24-TBGA

24-TPBGA

MT35XU512ABA1G12-0AAT

Micron Technology Inc.

SERIAL NOR SLC 64MX8 TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Mb (64M x 8)
Memory Interface: Xccela Bus
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TPBGA

패키지: 24-TBGA

재고2,848

FLASH

512Mb (64M x 8)

Xccela Bus

200MHz

-

1.7 V ~ 2 V

-40°C ~ 105°C

Surface Mount

24-TBGA

24-TPBGA

MT35XU256ABA2G12-0AAT

Micron Technology Inc.

SPI FLASH NOR SLC 32MX8 TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 256Mb (32M x 8)
Memory Interface: Xccela Bus
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TPBGA

패키지: 24-TBGA

재고5,664

FLASH

256Mb (32M x 8)

Xccela Bus

200MHz

-

1.7 V ~ 2 V

-40°C ~ 105°C

Surface Mount

24-TBGA

24-TPBGA

MT35XU256ABA1G12-0AAT

Micron Technology Inc.

SPI FLASH NOR SLC 32MX8 TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 256Mb (32M x 8)
Memory Interface: Xccela Bus
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TPBGA

패키지: 24-TBGA

재고2,128

FLASH

256Mb (32M x 8)

Xccela Bus

200MHz

-

1.7 V ~ 2 V

-40°C ~ 105°C

Surface Mount

24-TBGA

24-TPBGA