페이지 4 - Micron Technology Inc. 제품 - 메모리

부품 번호	제조업체	설명	패키지	재고	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT29F1T08GBLCEJ4-QM-C-TR	Micron Technology Inc.	QLC 1T 128GX8 VBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29F2G16ABBGAH4-AAT-G	Micron Technology Inc.	IC FLASH 2GBIT PARALLEL 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	2Gbit	Parallel	-	-	-	1.7V ~ 1.95V	-40°C ~ 105°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
MTFC128GASAQEA-WT-TR	Micron Technology Inc.	EMMC 1T Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT30AZZZCDA0TKQS-031-W-20V	Micron Technology Inc.	MODULE Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT40A1G16KNR-075-IT-E-TR	Micron Technology Inc.	DDR4 16G 1GX16 FBGA DDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 16Gbit Memory Interface: Parallel Clock Frequency: 1.333 GHz Write Cycle Time - Word, Page: 15ns Access Time: 19 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	패키지: -	Request a Quote	DRAM	SDRAM - DDR4	16Gbit	Parallel	1.333 GHz	15ns	19 ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
MT62F512M64D4EK-031-AAT-B	Micron Technology Inc.	LPDDR5 32G 512MX64 FBGA QDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 441-TFBGA Supplier Device Package: 441-TFBGA (14x14)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	32Gbit	Parallel	3.2 GHz	-	-	-	-40°C ~ 105°C	Surface Mount	441-TFBGA	441-TFBGA (14x14)
MT62F2G32D4DS-026-AIT-B	Micron Technology Inc.	LPDDR5 64GBIT 32 315/315 TFBGA 4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: - Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	64Gbit	Parallel	3.2 GHz	-	-	1.05V	-	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT25QU128ABB1ESE-0AUT	Micron Technology Inc.	IC FLASH 128MBIT SPI 166MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 1.8ms Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SO	패키지: -	재고3,519	FLASH	FLASH - NOR	128Mbit	SPI - Quad I/O	166 MHz	1.8ms	-	1.7V ~ 2V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SO
MT29F2G16ABAGAWP-AIT-G-TR	Micron Technology Inc.	IC FLASH 2GBIT PARALLEL 48TSOP I Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	패키지: -	Request a Quote	FLASH	FLASH - NAND (SLC)	2Gbit	Parallel	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
MT62F1G32D2DS-023-AIT-B-TR	Micron Technology Inc.	LPDDR5 32G 1GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -40°C ~ 95°C Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	32Gbit	Parallel	3.2 GHz	-	-	1.05V	-40°C ~ 95°C	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MTFC64GAZAOTD-AAT-TR	Micron Technology Inc.	UFS 512G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT61M256M32JE-12-NIT-A	Micron Technology Inc.	GDDR6 8G 256MX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SGRAM - GDDR6 Memory Size: 8Gbit Memory Interface: POD125 Clock Frequency: 6 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.2125V ~ 1.325V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 180-TFBGA Supplier Device Package: 180-FBGA (12x14)	패키지: -	Request a Quote	DRAM	SGRAM - GDDR6	8Gbit	POD125	6 GHz	-	-	1.2125V ~ 1.325V	-40°C ~ 95°C (TC)	Surface Mount	180-TFBGA	180-FBGA (12x14)
MT55L256V18P1T-7-5TR	Micron Technology Inc.	IC SRAM 4MBIT PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - ZBT Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: 4.2 ns Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	패키지: -	Request a Quote	SRAM	SRAM - ZBT	4Mbit	Parallel	133 MHz	-	4.2 ns	3.135V ~ 3.465V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MTFC64GAZAOTD-AAT	Micron Technology Inc.	UFS 512G Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 512Gbit Memory Interface: UFS2.1 Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	재고4,557	FLASH	FLASH - NAND (SLC)	512Gbit	UFS2.1	-	-	-	-	-40°C ~ 105°C	-	-	-
MTFC64GAZAOTD-AIT	Micron Technology Inc.	UFS 512G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F2G32D4DS-023-WT-C	Micron Technology Inc.	LPDDR5 64GBIT 32 315/315 TFBGA 4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	64Gbit	Parallel	2.133 GHz	-	-	1.05V	-25°C ~ 85°C	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT62F2G32D4DS-023-WT-B	Micron Technology Inc.	LPDDR5 64G 2GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: - Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	64Gbit	Parallel	4.266 GHz	-	-	1.05V	-	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT29AZ5A5CMGWD-18AAT-87C-TR	Micron Technology Inc.	NANDMCP8GB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F1G128D8AK-026-XT-C-TR	Micron Technology Inc.	LPDDR5 128GBIT 128 1159/2021 VFB Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT29VZZZCDAFQKWL-046-W-G0L	Micron Technology Inc.	UMCP 2112G Memory Type: Non-Volatile, Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, DRAM - LPDDR4X Memory Size: 2Tbit (NAND), 64Gbit (LPDDR4X) Memory Interface: UFS2.1 Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 254-BGA Supplier Device Package: 254-TFBGA	패키지: -	Request a Quote	FLASH, RAM	FLASH - NAND, DRAM - LPDDR4X	2Tbit (NAND), 64Gbit (LPDDR4X)	UFS2.1	2.133 GHz	-	-	-	-25°C ~ 85°C	Surface Mount	254-BGA	254-TFBGA
MT29F1T08EBLCHD4-QJ-C-TR	Micron Technology Inc.	TLC 1T 128GX8 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F2G32D4DS-023-WT-ES-C-TR	Micron Technology Inc.	LPDDR5 64GBIT 32 315/315 TFBGA 4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	64Gbit	Parallel	2.133 GHz	-	-	1.05V	-25°C ~ 85°C	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT62F768M32D2DS-023-FAAT-B-TR	Micron Technology Inc.	LPDDR5 24GBIT 32 315/315 TFBGA 2 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 24Gbit Memory Interface: Parallel Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	24Gbit	Parallel	4.266 GHz	-	-	-	-40°C ~ 105°C	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MT58L64L36FT-7-5	Micron Technology Inc.	IC SRAM 2MBIT PAR 113MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Standard Memory Size: 2Mbit Memory Interface: Parallel Clock Frequency: 113 MHz Write Cycle Time - Word, Page: - Access Time: 7.5 ns Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20.1)	패키지: -	Request a Quote	SRAM	SRAM - Standard	2Mbit	Parallel	113 MHz	-	7.5 ns	3.135V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20.1)
MT29VZZZAD8GUFSL-046-W-219-TR	Micron Technology Inc.	EMCP 544G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F2G64D8CZ-023-FAAT-C-TR	Micron Technology Inc.	LPDDR5 128GBIT 64 561/570 TFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	패키지: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT62F2G64D8EK-023-WT-B-TR	Micron Technology Inc.	LPDDR5 128G 2GX64 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 128Gbit Memory Interface: Parallel Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 441-TFBGA Supplier Device Package: 441-TFBGA (14x14)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	128Gbit	Parallel	4.266 GHz	-	-	1.05V	-25°C ~ 85°C	Surface Mount	441-TFBGA	441-TFBGA (14x14)
MT62F1G32D4DS-031-AUT-B-TR	Micron Technology Inc.	LPDDR5 32G 1GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	패키지: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	32Gbit	Parallel	3.2 GHz	-	-	1.05V	-40°C ~ 125°C	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)

MT29F1T08GBLCEJ4-QM-C-TR

Micron Technology Inc.

QLC 1T 128GX8 VBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT29F2G16ABBGAH4-AAT-G

Micron Technology Inc.

IC FLASH 2GBIT PARALLEL 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

2Gbit

Parallel

-

1.7V ~ 1.95V

-40°C ~ 105°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

MTFC128GASAQEA-WT-TR

Micron Technology Inc.

EMMC 1T

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT30AZZZCDA0TKQS-031-W-20V

Micron Technology Inc.

MODULE

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT40A1G16KNR-075-IT-E-TR

Micron Technology Inc.

DDR4 16G 1GX16 FBGA DDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 16Gbit
Memory Interface: Parallel
Clock Frequency: 1.333 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

패키지: -

Request a Quote

DRAM

SDRAM - DDR4

16Gbit

Parallel

1.333 GHz

15ns

19 ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

MT62F512M64D4EK-031-AAT-B

Micron Technology Inc.

LPDDR5 32G 512MX64 FBGA QDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 441-TFBGA
Supplier Device Package: 441-TFBGA (14x14)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

32Gbit

Parallel

3.2 GHz

-

-40°C ~ 105°C

Surface Mount

441-TFBGA

441-TFBGA (14x14)

MT62F2G32D4DS-026-AIT-B

Micron Technology Inc.

LPDDR5 64GBIT 32 315/315 TFBGA 4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

64Gbit

Parallel

3.2 GHz

-

1.05V

-

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MT25QU128ABB1ESE-0AUT

Micron Technology Inc.

IC FLASH 128MBIT SPI 166MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 1.8ms
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO

패키지: -

재고3,519

FLASH

FLASH - NOR

128Mbit

SPI - Quad I/O

166 MHz

1.8ms

-

1.7V ~ 2V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SO

MT29F2G16ABAGAWP-AIT-G-TR

Micron Technology Inc.

IC FLASH 2GBIT PARALLEL 48TSOP I

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

패키지: -

Request a Quote

FLASH

FLASH - NAND (SLC)

2Gbit

Parallel

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

MT62F1G32D2DS-023-AIT-B-TR

Micron Technology Inc.

LPDDR5 32G 1GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -40°C ~ 95°C
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

패키지: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

32Gbit

Parallel

3.2 GHz

-

1.05V

-40°C ~ 95°C

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MTFC64GAZAOTD-AAT-TR

Micron Technology Inc.

UFS 512G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

Request a Quote

-

MT61M256M32JE-12-NIT-A

Micron Technology Inc.

GDDR6 8G 256MX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SGRAM - GDDR6
Memory Size: 8Gbit
Memory Interface: POD125
Clock Frequency: 6 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.2125V ~ 1.325V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 180-TFBGA
Supplier Device Package: 180-FBGA (12x14)

패키지: -

Request a Quote

DRAM

SGRAM - GDDR6

8Gbit

POD125

6 GHz

-

1.2125V ~ 1.325V

-40°C ~ 95°C (TC)

Surface Mount

180-TFBGA

180-FBGA (12x14)

MT55L256V18P1T-7-5TR

Micron Technology Inc.

IC SRAM 4MBIT PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - ZBT
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2 ns
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

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SRAM

SRAM - ZBT

4Mbit

Parallel

133 MHz

-

4.2 ns

3.135V ~ 3.465V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MTFC64GAZAOTD-AAT

Micron Technology Inc.

UFS 512G

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 512Gbit
Memory Interface: UFS2.1
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

재고4,557

FLASH

FLASH - NAND (SLC)

512Gbit

UFS2.1

-

-40°C ~ 105°C

-

MTFC64GAZAOTD-AIT

Micron Technology Inc.

UFS 512G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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-

MT62F2G32D4DS-023-WT-C

Micron Technology Inc.

LPDDR5 64GBIT 32 315/315 TFBGA 4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

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DRAM

SDRAM - Mobile LPDDR5

64Gbit

Parallel

2.133 GHz

-

1.05V

-25°C ~ 85°C

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MT62F2G32D4DS-023-WT-B

Micron Technology Inc.

LPDDR5 64G 2GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

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DRAM

SDRAM - Mobile LPDDR5

64Gbit

Parallel

4.266 GHz

-

1.05V

-

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MT29AZ5A5CMGWD-18AAT-87C-TR

Micron Technology Inc.

NANDMCP8GB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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-

MT62F1G128D8AK-026-XT-C-TR

Micron Technology Inc.

LPDDR5 128GBIT 128 1159/2021 VFB

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

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-

MT29VZZZCDAFQKWL-046-W-G0L

Micron Technology Inc.

UMCP 2112G

Memory Type: Non-Volatile, Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, DRAM - LPDDR4X
Memory Size: 2Tbit (NAND), 64Gbit (LPDDR4X)
Memory Interface: UFS2.1
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 254-BGA
Supplier Device Package: 254-TFBGA

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FLASH, RAM

FLASH - NAND, DRAM - LPDDR4X

2Tbit (NAND), 64Gbit (LPDDR4X)

UFS2.1

2.133 GHz

-

-25°C ~ 85°C

Surface Mount

254-BGA

254-TFBGA

MT29F1T08EBLCHD4-QJ-C-TR

Micron Technology Inc.

TLC 1T 128GX8 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

MT62F2G32D4DS-023-WT-ES-C-TR

Micron Technology Inc.

LPDDR5 64GBIT 32 315/315 TFBGA 4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

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DRAM

SDRAM - Mobile LPDDR5

64Gbit

Parallel

2.133 GHz

-

1.05V

-25°C ~ 85°C

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MT62F768M32D2DS-023-FAAT-B-TR

Micron Technology Inc.

LPDDR5 24GBIT 32 315/315 TFBGA 2

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 24Gbit
Memory Interface: Parallel
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

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DRAM

SDRAM - Mobile LPDDR5

24Gbit

Parallel

4.266 GHz

-

-40°C ~ 105°C

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MT58L64L36FT-7-5

Micron Technology Inc.

IC SRAM 2MBIT PAR 113MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Standard
Memory Size: 2Mbit
Memory Interface: Parallel
Clock Frequency: 113 MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5 ns
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20.1)

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SRAM

SRAM - Standard

2Mbit

Parallel

113 MHz

-

7.5 ns

3.135V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20.1)

MT29VZZZAD8GUFSL-046-W-219-TR

Micron Technology Inc.

EMCP 544G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

MT62F2G64D8CZ-023-FAAT-C-TR

Micron Technology Inc.

LPDDR5 128GBIT 64 561/570 TFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

패키지: -

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-

MT62F2G64D8EK-023-WT-B-TR

Micron Technology Inc.

LPDDR5 128G 2GX64 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 128Gbit
Memory Interface: Parallel
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 441-TFBGA
Supplier Device Package: 441-TFBGA (14x14)

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DRAM

SDRAM - Mobile LPDDR5

128Gbit

Parallel

4.266 GHz

-

1.05V

-25°C ~ 85°C

Surface Mount

441-TFBGA

441-TFBGA (14x14)

MT62F1G32D4DS-031-AUT-B-TR

Micron Technology Inc.

LPDDR5 32G 1GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

패키지: -

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DRAM

SDRAM - Mobile LPDDR5

32Gbit

Parallel

3.2 GHz

-

1.05V

-40°C ~ 125°C

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)